BCP53T1G

## BCP53 Series 

## PNP Silicon Epitaxial Transistors 

This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT−223 package which is designed for medium power surface mount applications. 

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- High Current 

- NPN Complement is BCP56 

- The SOT−223 Package can be soldered using wave or reflow. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die 

**MEDIUM POWER HIGH CURRENT SURFACE MOUNT PNP TRANSISTORS** 

• Device Marking: COLLECTOR 2, 4 BCP53T1G = AH BCP53−10T1G = AH−10 1 BCP53−16T1G = AH−16 BASE • S and NSV Prefix for Automotive and Other Applications Requiring ~~©~~ Unique Site and Control Change Requirements; AEC−Q101 EMITTER 3 Qualified and PPAP Capable **MARKING DIAGRAM** • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS 4 Compliant 1 2 AYW 3 XXXXX **MAXIMUM RATINGS** (TC = 25 ° C unless otherwise noted) **SOT−223 CASE 318E Rating Symbol Value Unit STYLE 1** 1 Collector−Emitter Voltage VCEO −80 Vdc A = Assembly Location Y = Year Collector−Base Voltage VCBO −100 Vdc W = Work Week Emitter−Base Voltage VEBO −5.0 Vdc XXXXX = Specific Device Code = Pb−Free Package Collector Current IC 1.5 Adc (Note: Microdot may be in either location) Total Power Dissipation PD @ TA = 25 ° C (Note 1) 1.5 W Derate above 25 ° C 12 mW/ ° C **ORDERING INFORMATION** Operating and Storage TJ, Tstg −65 to +150 ° C **Device Package Shipping**[†] Temperature Range BCP53T1G SOT−223 1000/Tape & Reel ~~=ieie Ce~~ (Pb−Free) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be SBCP53−10T1G SOT−223 1000/Tape & Reel assumed, damage may occur and reliability may be affected. (Pb−Free) 1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. BCP53−10T1G SOT−223 1000/Tape & Reel x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in. (Pb−Free) **THERMAL CHARACTERISTICS** SBCP53−10T1G SOT−223 1000/Tape & Reel (Pb−Free) **Characteristic Symbol Max Unit** BCP53−16T1G SOT−223 1000/Tape & Reel Thermal Resistance, Junction−to−Ambient R JA 83.3 ° C/W (Pb−Free) (Surface Mounted) SBCP53−16T1G SOT−223 1000/Tape & Reel Lead Temperature for Soldering, TL (Pb−Free) 0.0625 ″ from case 260 ° C BCP53−16T3G SOT−223 4000/Tape & Reel Time in Solder Bath 10 s (Pb−Free) NSVBCP53−16T3G SOT−223 4000/Tape & Reel (Pb−Free) ~~==~~ †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

Publication Order Number: 

**1** 

© Semiconductor Components Industries, LLC, 2015 **June, 2018 − Rev. 13** 

**BCP53T1/D** 

## **BCP53 Series** 

**ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS **(TA= 25°C unless o|therwise noted)|||||
|---|---|---|---|---|---|
|**Characteristics**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**||||||
|Collector−Base Breakdown Voltage<br>(IC= −100�Adc, IE= 0)|V(BR)CBO|−100|−|−|Vdc|
|Collector−Emitter Breakdown Voltage<br>(IC= −1.0 mAdc, IB= 0)|V(BR)CEO|−80|−|−|Vdc|
|Collector−Emitter Breakdown Voltage<br>(IC= −100�Adc, RBE= 1.0 k�)|V(BR)CER|−100|−|−|Vdc|
|Emitter−Base Breakdown Voltage<br>(IE= −10�Adc, IC= 0)|V(BR)EBO|−5.0|−|−|Vdc|
|Collector−Base Cutoff Current<br>(VCB= −30 Vdc, IE= 0)|ICBO|−|−|−100|nAdc|
|Emitter−Base Cutoff Current<br>(VEB= −5.0 Vdc, IC= 0)|IEBO|−|−|−100|nAdc|
|**ON CHARACTERISTICS**||||||
|DC Current Gain<br>(IC= −5.0 mAdc, VCE= −2.0 Vdc)<br>All Part Types<br>(IC= −150 mAdc, VCE= −2.0 Vdc)<br>BCP53, SBCP53<br>BCP53−10, SBCP53−10<br>BCP53−16, SBCP53−16, NSVBCP53−16<br>(IC= −500 mAdc, VCE= −2.0 Vdc)<br>All Part Types|hFE|25<br>40<br>63<br>100<br>25|−<br>−<br>−<br>−<br>−|−<br>250<br>160<br>250<br>−|−|
|Collector−Emitter Saturation Voltage<br>(IC= −500 mAdc, IB= −50 mAdc)|VCE(sat)|−|−|−0.5|Vdc|
|Base−Emitter On Voltage<br>(IC= −500 mAdc, VCE= −2.0 Vdc)|VBE(on)|−|−|−1.0|Vdc|
|**DYNAMIC CHARACTERISTICS**||||||
|Current−Gain − Bandwidth Product<br>(IC= −10 mAdc, VCE= −5.0 Vdc, f = 35 MHz)|fT|−|50|−|MHz|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

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**2** 

**BCP53 Series** 

## **TYPICAL CHARACTERISTICS** 

**==> picture [491 x 591] intentionally omitted <==**

**----- Start of picture text -----**<br>
2.0 200<br>IC/IB = 10 BCP53, −10, −16 150 ° C, 5 V<br>1.8 180<br>1.6 +150 ° C 160 150 ° C, 2 V<br>1.4 −55 ° C 140<br>25 ° C, 5 V<br>1.2 120<br>25 ° C, 2 V<br>1.0 100<br>+25 ° C<br>0.8 80<br>−55 ° C, 5 V<br>0.6 60<br>−55 ° C, 2 V<br>0.4 40<br>0.2 20<br>0 0<br>0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>Figure 1. Collector Emitter Saturation Voltage Figure 2. DC Current Gain vs. Collector<br>vs. Collector Current Current (BCP53)<br>180 300<br>150 ° C, 5 V 150 ° C, 5 V<br>160<br>150 ° C, 2 V 250 °<br>140 150 C, 2 V<br>120 25 ° C, 5 V 200 25 ° C, 5 V<br>100 25 ° C, 2 V 150 25 ° C, 2 V<br>80<br>60 −55 ° C, 5 V 100 −55 ° C, 5 V<br>40 −55 ° C, 2 V −55 ° C, 2 V<br>50<br>20<br>0 0<br>0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>Figure 3. DC Current Gain vs. Collector Figure 4. DC Current Gain vs. Collector<br>Current (BCP53−10) Current (BCP53−16)<br>1.2 1.2<br>IC/IB = 10 BCP53, −10 IC/IB = 10 BCP53 −16<br>1.1 1.1<br>1.0 1.0<br>0.9 0.9<br>−55 ° C −55 ° C<br>0.8 0.8<br>0.7 0.7<br>+25 ° C +25 ° C<br>0.6 0.6<br>0.5 0.5<br>+150 ° C +150 ° C<br>0.4 0.4<br>0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>, DC CURRENT GAIN<br>, COLLECTOR EMITTER SAT-ce(sat) URATION VOLTAGE (V) hFE<br>V<br>, DC CURRENT GAIN , DC CURRENT GAIN<br>FE FE<br>h h<br>, BASE EMITTER SATURA- TION VOLTAGE (V) , BASE EMITTER SATURA- TION VOLTAGE (V)<br>be(sat) be(sat)<br>V V<br>**----- End of picture text -----**<br>


**Figure 5. BCP53, −10 Base Emitter Saturation Voltage vs. Collector Current** 

**Figure 6. BCP53−16 Base Emitter Saturation Voltage vs. Collector Current** 

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**3** 

**BCP53 Series** 

## **TYPICAL CHARACTERISTICS** 

**==> picture [491 x 591] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.2 1.2<br>Vce = 2 V BCP53, −10 Vce = 2 V BCP53 −16<br>1.1 1.1<br>1.0<br>1.0<br>0.9<br>0.9 −55 ° C<br>−55 ° C 0.8<br>0.8<br>0.7 +25 ° C<br>0.7<br>0.6<br>0.6 +25 ° C<br>0.5<br>+150 ° C<br>0.5 0.4<br>0.4 +150 ° C 0.3<br>0.3 0.2<br>0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>Figure 7. BCP53, −10 Base Emitter Turn−On Figure 8. BCP53−16 Base Emitter Turn−On<br>Voltage vs. Collector Current VBE(on) Voltage vs. Collector Current<br>1.0 110<br>BCP53, −10, −16 IC = 1.0 A IC = 1.5 A BCP53−10<br>0.9<br>100<br>0.8<br>IC = 500 mA<br>0.7 90 BCP53<br>0.6<br>80<br>IC = 100 mA<br>0.5<br>70<br>0.4<br>0.3 60<br>BCP53−16<br>0.2<br>50<br>0.1<br>0 40<br>0.001 0.01 0.1 1 0 1 2 3 4 5<br>Ib, BASE CURRENT (A) VOLTAGE (V)<br>Figure 9. BCP53, −10, −16 Saturation Region Figure 10. Input Capacitance<br>25 10<br>100 ms 10 ms<br>1 s 1 ms<br>20<br>BCP53−10<br>1<br>15<br>BCP53<br>10 CONTINUOUS THERMAL LIMIT<br>0.1<br>BCP53−16<br>5<br>SINGLE PULSE TEST AT Tamb = 25 ° C<br>0 0.01<br>0 2 4 6 8 10 12 14 16 18 20 0.1 1 10 100<br>VOLTAGE (V) Vce, COLLECTOR EMITTER VOLTAGE (V)<br>VOLTAGE (V)<br>, BASE EMITTER TURN−ON , BASE EMITTER SATURA- TION VOLTAGE (V)<br>be(on) be(sat)<br>V V<br>CAPACITANCE (pF)<br>, COLLECTOR−EMITTER VOLTAGE (V)<br>ce<br>V<br>CAPACITANCE (pF)<br>Ic, COLLECTOR CURRENT (A)<br>**----- End of picture text -----**<br>


**Figure 11. Output Capacitance** 

**Figure 12. Standard Operating Area** 

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**4** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

**SOT−223 (TO−261)** CASE 318E−04 ISSUE R 

**SCALE 1:1** 

## DATE 02 OCT 2018 

**DOCUMENT NUMBER: 98ASB42680B** 

**DESCRIPTION: SOT−223 (TO−261)** 

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© Semiconductor Components Industries, LLC, 2018 

DATE 02 OCT 2018 

## **SOT−223 (TO−261)** CASE 318E−04 ISSUE R 

STYLE 1: STYLE 2: STYLE 3: STYLE 4: STYLE 5: PIN 1. BASE PIN 1. ANODE PIN 1. GATE PIN 1. SOURCE PIN 1. DRAIN 2. COLLECTOR 2. CATHODE 2. DRAIN 2. DRAIN 2. GATE 3. EMITTER 3. NC 3. SOURCE 3. GATE 3. SOURCE 4. COLLECTOR 4. CATHODE 4. DRAIN 4. DRAIN 4. GATE STYLE 6: STYLE 7: STYLE 8: STYLE 9: STYLE 10: PIN 1. RETURN PIN 1. ANODE 1 CANCELLED PIN 1. INPUT PIN 1. CATHODE 2. INPUT 2. CATHODE 2. GROUND 2. ANODE 3. OUTPUT 3. ANODE 2 3. LOGIC 3. GATE 4. INPUT 4. CATHODE 4. GROUND 4. ANODE STYLE 11: STYLE 12: STYLE 13: PIN 1. MT 1 PIN 1. INPUT PIN 1. GATE 2. MT 2 2. OUTPUT 2. COLLECTOR 3. GATE 3. NC 3. EMITTER 4. MT 2 4. OUTPUT 4. COLLECTOR **GENERIC MARKING DIAGRAM*** AYW XXXXX 1 ~~|~~ A = Assembly Location Y = Year W = Work Week XXXXX = Specific Device Code = Pb−Free Package (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ”, may or may not be present. Some products may not follow the Generic Marking. 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98ASB42680B** Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. **DESCRIPTION: SOT−223 (TO−261) PAGE 2 OF 2** ~~—ee~~ ON Semiconductor and          are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 

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