BCP52
Bipolar (BJT) Single Transistor, PNP, 60 V, 1.2 A, 1.5 W, SOT-223, Surface Mount
- Manufacturer: ONSEMI
- Product type: Single Bipolar Junction Transistors - BJT
- Power Dissipation: 1.5W
- DC Current Gain hFE Min: 25hFE
- Continuous Collector Current: 1.2A
- Collector Emitter Voltage Max: 60V
| Delivery and price | |
|---|---|
| Units per pack | 10 |
| Price | 0.153 € |
| Current stock | 10+ |
| Lead time | 30 days |
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March 2014<br>**----- End of picture text -----**<br>
## **BCP52 PNP General-Purpose Amplifier**
## **Description**
This device is designed for general-purpose mediumpower amplifiers and switching circuits for collector currents to 1.0 A. Sourced from process 78.
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4<br>3<br>2<br>1 SOT-223<br>1. Base 2,4. Collector 3. Emitter<br>**----- End of picture text -----**<br>
## **Ordering Information**
**Part Number Marking Package Packing Method** BCP52 BCP52 SOT-223 4L Tape and Reel ~~ee~~
## **Absolute Maximum Ratings**[(1),(2)]
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VCEO|Collector-Emitter Voltage|-60|V|
|VCBO|Collector-Base Voltage|-60|V|
|VEBO|Emitter-Base Voltage|-5|V|
|IC|Collector Current - Continuous|-1.2|A|
|TJ, TSTG|Operating and Storage Junction Temperature Range|-55 to +150|°C|
## **Notes:**
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty-cycle operation.
© 1997 Fairchild Semiconductor Corporation BCP52 Rev. 1.1.0
www.fairchildsemi.com
1
## **Thermal Characteristics**[(3)]
Values are at TA = 25°C unless otherwise noted.
|Values are at TA = 25°C unless otherwise noted.A = 25°C unless otherwise noted.= 25°C unless otherwise noted.|Values are at TA = 25°C unless otherwise noted.A = 25°C unless otherwise noted.= 25°C unless otherwise noted.|Values are at TA = 25°C unless otherwise noted.A = 25°C unless otherwise noted.= 25°C unless otherwise noted.|Values are at TA = 25°C unless otherwise noted.A = 25°C unless otherwise noted.= 25°C unless otherwise noted.|
|---|---|---|---|
|**Note:**<br>3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.<br>**Electrical Characteristics**<br>Values are at TA= 25°C unless otherwise noted.<br>**Symbol**<br>**Parameter**<br>**Max.**<br>**Unit**<br>PD<br>Total Device Dissipation<br>1.5<br>W<br>Derate Above 25°C<br>12<br>mW/°C<br>RθJA<br>Thermal Resistance, Junction to Ambient<br>83.3<br>°C/W<br>**Symbol**<br>**Parameter**<br>**Conditions**<br>**Min.**<br>**Max.**<br>**Unit**<br>BVCEO<br>Collector-Emitter Breakdown Voltage IC= -10 mA, IB= 0<br>-60<br>V<br>~~Ss~~||||
|BVCBO<br>Collector-Base Breakdown Voltage<br>IC= -100μA, IE= 0|-60||V|
|BVEBO<br>Emitter-Base Breakdown Voltage<br>IE= -10μA, IC= 0|-5.0||V|
|ICBO<br>Collector-Base Cut-Off Current<br>VCB= -30 V, IE= 0<br>VCB= -30 V, IE= 0, TA= 125°C||-100<br>-10|nA<br>μA|
|IEBO<br>Emitter-Base Cut-Off Current<br>VEB= -5.0 V, IC= 0||-10|μA|
|IC= -5.0 mA, VCE= -2.0 V|25|||
|hFE<br>DC Current Gain<br>IC= -150 mA, VCE= -2.0 V|40|250||
|IC= -500 mA, VCE= -2.0 V|25|||
|VCE(sat)<br>Collector-Emitter Saturation Voltage<br>IC= -500 mA, IB= -50 mV||-0.5|V|
|VBE(on)<br>Base-Emitter On Voltage<br>IC= -500 mA, VCE= -2.0 V||-1.0|V|
© 1997 Fairchild Semiconductor Corporation BCP52 Rev. 1.1.0
www.fairchildsemi.com
2
## **Typical Performance Characteristics**
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400 0.6<br>β = 10<br>en V = 5V CE 0.5 Pp Ltt TT - 40 °C<br>300<br>pet i 0.4 Pg 25 °C<br>eee ae /<br>125 °C<br>200 0.3<br>— LN Uy<br>poea 25 °C Peg= ) 0.2 PTaLa gh<br>100 125 °C<br>a - 40 °C | Tir 0.1 eeeA 2<br>| ee! eae<br>TET Sem Cr<br>0 PL [ETH] 0 a eeeee<br>0.01 0.1 1 0.01 0.1 1 1.5<br>I - COLLECTOR CURRENT (A)C I - COLLECTOR CURRENT (A)C<br>Figure 1. Typical Pulsed Current Gain vs. Figure 2. Collector-Emitter Saturation Voltage vs.<br>Collector Current Collector Current<br>1<br>β = 10<br>1<br>ee [a] Y Tn<br>ee 0.8 Ton on<br>0.8 a ee ie E00 i CCee - 40 °C T e e<br>- 40 °C<br>25 °C 0.6 25 °C<br>0.6 SaggyPe RieTTIBeall ulleTEeTTT TTEr<br>Oa 125 °C 0.4 1 125 TE ° C V = 5V CE rch<br>0.4 eee iil eecat| | STae || Tt<br>CAT ATT PEACE<br>0.2<br>1 10 100 1000 1 10 100 1000<br>I - COLLECTOR CURRENT (mA)C I - COLLECTOR CURRENT (mA)C<br>Figure 3. Base-Emitter Saturation Voltage vs. Figure 4. Base-Emitter On Voltage vs.<br>Collector Current Collector Current<br>100 40<br>f = 1.0 MHz<br>V = 40V CB<br>10 Sue === === = 30 TTT<br>Sees | AHHH<br>1 20<br>eee NOE<br>0.1 10<br>Pees Ht<br>25 eo 50 75 100 125 150 0 0 PCCEEPE 4 8 12 EET 16 20 24 28<br>T - AMBIENT TEMPERATURE ( C)A ° V - COLLECTOR-BASE VOLTAGE (V)CB<br>BESAT<br>CESAT<br>BE(O N)<br>FE<br>obo<br>h - TYPICAL PULSED CURRENT GAIN<br>V - COLLECTOR-EMITTER VOLTAGE (V)<br>V - BASE-EMITTER VOLTAGE (V)<br>V - BASE-EMITTER ON VOLTAGE (V)<br>CBO<br>I - COLLECTOR CURRENT (nA)<br> - COLLECTOR-BASE CAPACITANCE (pF)<br>**----- End of picture text -----**<br>
**Figure 3. Base-Emitter Saturation Voltage vs. Collector Current**
**Figure 5. Collector Cut-Off Current vs. Ambient Temperature**
**Figure 6. Collector-Base Capacitance vs. Collector-Base Voltage**
© 1997 Fairchild Semiconductor Corporation BCP52 Rev. 1.1.0
www.fairchildsemi.com
3
## **Typical Performance Characteristics** (Continued)
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250 1.5<br>V = 10V CE<br>1.25<br>200 po ME CE KEAN EERE EEE<br>o_o 1 1Pe | fF | NOTE| KI SOT-223 | | {| |<br>150 A | fe |<br>0.75<br>100 SHH a<br>rrr Ps 0.5 FERRER ISSEEEE<br>eS Z| N ppNE<br>50<br>eer Ch 0.25 Pr rr rt A<br>0 PACCh 0 ttt}REESEtf tt} AtSI<br>1 10 100 1000 0 25 50 75 100 125 150<br>I - COLLECTOR CURRENT (mA)C TEMPERATURE ( C)o<br>Figure 7. Gain Bandwidth Product vs. Figure 8. Power Dissipation vs.<br>Collector Current Ambient Temperature<br>D<br>FE<br>P - POWER DISSIPATION (W)<br>h - GAIN BANDWIDTH PRODUCT (MHz)<br>**----- End of picture text -----**<br>
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Figure 8. Power Dissipation vs.<br>Ambient Temperature<br>**----- End of picture text -----**<br>
© 1997 Fairchild Semiconductor Corporation BCP52 Rev. 1.1.0
www.fairchildsemi.com
4
## **Physical Dimensions**
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SOT-223<br>**----- End of picture text -----**<br>
## **Figure 9. MOLDED PACKAGE, SOT-223, 4 LEAD (ACTIVE)**
_Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products._
_Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/MA/MA04A.pdf ._
_For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area: http://www.fairchildsemi.com/packing_dwg/PKG-MA04A_BK.pdf_ .
© 1997 Fairchild Semiconductor Corporation BCP52 Rev. 1.1.0
www.fairchildsemi.com
5
## **TRADEMARKS**
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.
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## **DISCLAIMER**
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
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## **ANTI-COUNTERFEITING POLICY**
Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
## **PRODUCT STATUS DEFINITIONS**
|**Definition of Terms**|||
|---|---|---|
|**Datasheet Identification**|**Product Status**|**Definition**|
|Advance Information|Formative / In Design|Datasheet contains the design specifications for product development. Specifications may change<br>in anymanner without notice.|
|Preliminary|First Production|Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild<br>Semiconductor reserves the right to make changes at anytime without notice to improve design.|
|No Identification Needed|Full Production|Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make<br>changes at anytime without notice to improve the design.|
|Obsolete|Not In Production|Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.<br>The datasheet is for reference information only.|
© Fairchild Semiconductor Corporation
www.fairchildsemi.com
Updated at February 9, 2023
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