BCM857QASZ

Bipolar Transistor Array, Dual PNP, 45 V, 100 mA

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Manufacturer: NEXPERIA
Product type: Bipolar Junction Transistor Arrays - BJT
Transistor Polarity:Dual PNP; Collector Emitter Voltage V(br)ceo:-45V; Power Dissipation Pd:350mW; DC Collector Current:-100mA; DC Current Gain hFE:0.95hFE; Transistor Case Style:DF
MSL: MSL 1 - Unlimited
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 6Pins
Product Range: -
Qualification: AEC-Q101
Transistor Mounting: Surface Mount
Transistor Polarity: Dual PNP
Power Dissipation NPN: -
Power Dissipation PNP: 350mW
Transistor Case Style: DFN1010B
Transition Frequency NPN: -
Transition Frequency PNP: 175MHz
Operating Temperature Max: 150°C
DC Current Gain hFE Min NPN: -
DC Current Gain hFE Min PNP: 200hFE
Continuous Collector Current NPN: -
Continuous Collector Current PNP: 100mA
Collector Emitter Voltage Max NPN: -
Collector Emitter Voltage Max PNP: 45V

Datasheet

Updated at March 17, 2026