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BCM857BV-7
Bipolar Transistor Array, Dual PNP, 45 V, 100 mA
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- Manufacturer: DIODES INC.
- Product type: Bipolar Junction Transistor Arrays - BJT
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 6Pins
- Product Range: -
- Qualification: AEC-Q101
- Transistor Mounting: Surface Mount
- Transistor Polarity: Dual PNP
- Power Dissipation NPN: -
- Power Dissipation PNP: 500mW
- Transistor Case Style: SOT-563
- Transition Frequency NPN: -
- Transition Frequency PNP: 175MHz
- Operating Temperature Max: 150°C
- DC Current Gain hFE Min NPN: -
- DC Current Gain hFE Min PNP: 200hFE
- Continuous Collector Current NPN: -
- Continuous Collector Current PNP: 100mA
- Collector Emitter Voltage Max NPN: -
- Collector Emitter Voltage Max PNP: 45V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.107 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
rir **BCM857BV** DIODES. &. - **45V MATCHED PAIR PNP SMALL SIGNAL TRANSISTOR IN SOT563** ## **Features** - BVCEO > -45V - IC = -100mA High Collector Current - Pair of PNP Transistors That Are Intrinsically Matched (Note 1) - 2% Matching on Current Gain (hFE) - 2mV Matching on Base-Emitter Voltage (VBE) - Fully Internally Isolated in a Small Surface Mount Package - **Totally Lead-Free & Fully RoHS Compliant (Notes 2 & 3)** ## **Mechanical Data** - Case: SOT563 - Case Material: Molded Plastic, “Green” Molding Compound; UL Flammability Classification Rating 94V-0 - Moisture Sensitivity: Level 1 per J-STD-020 - Terminals: Finish — Matte Tin Annealed over Copper Leadframe; Solderable per MIL-STD-202, Method 208 © **e3** - Weight: 0.003 grams (Approximate) - **Halogen and Antimony Free. "Green" Device (Note 4)** - **Qualified to AEC-Q101 for High Reliability** **==> picture [401 x 125] intentionally omitted <==** **----- Start of picture text -----**<br> SOT563 C1 C2<br>B1 B2<br>y 4} [2]<br>~ E1 E2 AH BI<br>Top View<br>Top View Device Symbol<br>Pin-Out<br>**----- End of picture text -----**<br> ## **Ordering Information** (Note 5) |**Product**|**Compliance**|**Marking**|**Reel size(inches)**|**Tape width(mm)**|**Quantity per reel**| |---|---|---|---|---|---| |BCM857BV-7|AEC-Q101|1U5|7|8|3,000| Notes: 1. Intrinsically matched pair as this is built with adjacent die from the same wafer. 2. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 3. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 4. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. ## **Marking Information** ||||||SOT563|SOT563|SOT563|||||||||||||| |---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---| |||||FL|tt||||||1U5 = Product Type Marking Code||||||1U5 = Product Type Marking Code|||| ||||||||||||YM = Date Code Marking|||||||||| ||||||||||||Y = Year (ex: B = 2014)||Y = Year (ex: B = 2014)|Y = Year (ex: B = 2014)||Y = Year (ex: B = 2014)||||| ||||||||||||M = Month (ex: 9 = September)|||M = Month (ex: 9 = September)||||||| |||||FP}|Ld||Ul|||||||||||||| |Date CodeKey||||||||||||||||||||| |**Year**|**2014**|||**2015**|||**2016**|||**2017**||**2018**||||**2019**|**2020**|||**2021**| |**Code**|B|||C|||D|||E||F||||G|H|||I| |||||||||||||||||||||| |**Month**|**Jan**|**Feb**||**Mar**|||**Apr**|**May**||**Jun**||**Jul**||**Aug**||**Sep**|**Oct**|**Nov**||**Dec**| |**Code**|1|2|||3||4|5||6||7||8||9|O|N||D| 1 of 5 **www.diodes.com** March 2015 © Diodes Incorporated BCM857BV Datasheet number: DS37433 Rev. 3 - 2 **BCM857BV** ## **Absolute Maximum Ratings** (@TA = +25°C, unless otherwise specified.) |**Absolute Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)pecified.)ecified.))|**Absolute Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)pecified.)ecified.))|**Absolute Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)pecified.)ecified.))|**Absolute Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)pecified.)ecified.))| |---|---|---|---| ||||| |**Characteristic**|**Symbol**|**Value**|**Unit**| |Collector-Base Voltage|VCBO|-50|V| |Collector-Emitter Voltage|VCEO|-45|V| |Emitter-Base Voltage|VEBO|-5.0|V| |Collector Current|IC|-100|mA| |Peak Collector Current|ICM|-200|mA| |Peak Base Current|IBM|-200|mA| ## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) |**Thermal Characteristics**(@TA = +25°C, unless otherwise specified.)@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)pecified.)ecified.))|**Thermal Characteristics**(@TA = +25°C, unless otherwise specified.)@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)pecified.)ecified.))|**Thermal Characteristics**(@TA = +25°C, unless otherwise specified.)@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)pecified.)ecified.))|**Thermal Characteristics**(@TA = +25°C, unless otherwise specified.)@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)pecified.)ecified.))| |---|---|---|---| ||||| |**Characteristic**|**Symbol**|**Value**|**Unit**| |Power Dissipation. Total Device (Note 6)|PD|500|mW| |Power Dissipation. Single Transistor (Note 7)|PD|357|mW| |Thermal Resistance, Junction to Ambient Air (Note 6)|RθJA|+250|°C/W| |Thermal Resistance, Junction to Ambient Air (Note 7)|RθJA|+350|°C/W| |Operatingand Storage Temperature Range|TJ, TSTG|-65 to +150|°C| ## **ESD Ratings** (Note 8) |**ESD Ratingsgss **(Note 8)|**ESD Ratingsgss **(Note 8)|**ESD Ratingsgss **(Note 8)|**ESD Ratingsgss **(Note 8)|**ESD Ratingsgss **(Note 8)| |---|---|---|---|---| |||||| |**Characteristic**|**Symbol**|**Value**|**Unit**|**JEDEC Class**| |Electrostatic Discharge - Human BodyModel|ESD HBM|4,000|V|3A| |Electrostatic Discharge - Machine Model|ESD MM|400|V|C| **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) |**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)| |---|---|---|---|---|---|---| |||||||| |**Characteristic**(Note 9)<br>~~es~~|**Symbol**<br>~~es~~<br>~~ee~~|**Min**<br>~~es~~<br>~~ee~~|**Typ**<br>~~es~~<br>~~ee~~|**Max**<br>~~es~~<br>~~ee~~|**Unit**<br>~~es~~<br>~~ee~~|**Test Condition**<br>~~es~~| |Collector-Base Breakdown Voltage<br>~~es~~|BVCBO<br>~~es~~<br>~~ee~~|-50<br>~~es~~<br>~~ee~~|—<br>~~es~~<br>~~ee~~|—<br>~~es~~<br>~~ee~~|V<br>~~es~~<br>~~ee~~<br>~~ee~~|IC= 100µA, IB= 0<br>~~es~~| |Collector-Emitter Breakdown Voltage<br>~~ee~~|BVCEO<br>~~ee ~~<br>~~ee~~|-45<br> ~~ee ~~<br>~~ee~~|—<br> ~~ee ~~<br>~~ee~~|—<br> ~~ee ~~<br>~~ee~~|V<br> ~~ee~~<br>~~ee~~<br>~~ee~~|IC= 10mA, IB= 0<br>~~ee~~| |Emitter-Base Breakdown Voltage<br>~~ee~~<br>~~a~~|BVEBO<br>~~ee~~<br>|-5<br>~~ee~~<br>|—<br>~~ee~~<br>|—<br>~~ee~~<br>|V<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>|IE= 100µA, IC= 0<br>~~ee~~<br>| |DC Current Gain<br>~~ee~~<br>~~a~~|hFE<br>~~ee~~<br>|200<br>~~ee~~<br>|290<br>~~ee~~<br>|450<br>~~ee~~<br>|—<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>|VCE= -5.0V, IC= -2.0mA<br>~~ee~~<br>| |DC Current Gain Matching(Note 10)<br>~~ee~~<br>~~a~~|hFE1/hFE2<br>~~ee~~<br>|0.98<br>~~ee~~<br>|1<br>~~ee~~<br>|—<br>~~ee~~<br>|—<br>~~ee~~<br>~~ee~~<br>|VCE= -5.0V, IC= -2.0mA<br>~~ee~~<br>| |Collector-Emitter Saturation Voltage<br>~~a~~<br>~~a~~|VCE(sat)<br>|—<br>|-50<br>-200<br>|-200<br>-400<br>|mV<br>~~ee~~<br><br>~~ee~~|IC= -10mA, IB= -0.5mA<br>IC= -100mA, IB= -5.0mA<br>| |Base-Emitter Saturation Voltage<br>~~aee~~<br>~~a~~|VBE(sat)<br>~~ee~~|—<br>~~ee~~|-760<br>~~ee~~|—<br>~~ee~~|mV<br>~~ee~~<br>~~ee~~<br>~~ee~~|IC= -10mA, IB= -0.5mA<br>~~ee~~| |Base-Emitter Voltage<br>~~ee~~<br>~~a~~|VBE(on)<br>~~ee~~|-600<br>~~ee~~|-650<br>~~ee~~|-700<br>~~ee~~|mV<br>~~ee~~<br>~~ee~~|VCE= -5.0V, IC= -2.0mA<br>~~ee~~| |Base-Emitter Voltage Matching (Note 11)<br>~~a~~<br>~~oo~~|VBE1(on) -<br>VBE2(on)|—|—|2|mV<br>~~ee~~|VCE= -5.0V, IC= -2.0mA| |Collector Cut-Off Current<br>~~a~~<br>~~oo~~|ICBO|—<br>—<br>~~GG~~|—<br>—<br>~~GG~~|-15<br>-5.0<br>~~GO~~|nA<br>µA<br>~~ee~~|VCB= -30V<br>VCB= -30V, TA= +150°C| |Emitter Cut-Off Current<br>~~oo~~<br>~~Ge~~|IEBO<br>~~Ge~~|—<br>~~Ge~~<br>~~GG~~|—<br>~~Ge~~<br>~~GG~~|-100<br>~~Ge~~<br>~~GO~~|nA<br>~~Ge~~|VEB= -5.0V, IC = 0<br>~~Ge~~| |Gain Bandwidth Product<br>~~Ge~~|fT<br>~~Ge~~|100<br>~~GG~~<br>~~Ge~~<br>~~ee~~|175<br>~~GG~~<br>~~Ge~~|—<br>~~GO~~<br>~~Ge~~|MHz<br>~~Ge~~|VCE= -5.0V, IC= -10mA,<br>f = 100MHz<br>~~Ge~~| |Collector-Base Capacitance<br>~~ee~~|CCBO<br>~~ee~~|—<br>~~ee~~<br>~~ee~~|—<br>~~ee~~|2.2<br>~~ee~~|pF<br>~~ee~~|VCB= -10V, f = 1.0MHz<br>~~ee~~| |Emitter-Base Capacitance<br>~~ee~~|CEBO<br>~~ee~~|—<br>~~ee~~<br>~~ee~~|10<br>~~ee~~|—<br>~~ee~~|pF<br>~~ee~~|VEB= -0.5V, f = 1.0MHz<br>~~ee~~| 7. Same as Note 6 except for only one active die running. 8. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 9. Short duration pulse test used to minimize self-heating effect. 10. The smaller of the two values is taken as the numerator. 11. The smaller of the two values is subtracted from the larger value. 2 of 5 **www.diodes.com** March 2015 © Diodes Incorporated BCM857BV Datasheet number: DS37433 Rev. 3 - 2 DIODES.' nu c o R P o R A T =e so **BCM857BV** [ ## **Typical Electrical Characteristics** (@TA = +25°C unless otherwise specified.) **==> picture [224 x 442] intentionally omitted <==** **----- Start of picture text -----**<br> See Note 6<br>hs \<br>“||<br>g<br>0.2 TON<br>L™ NX<br>See Note 7<br>\<br>005 25 50 5 100 125IN150<br>TEMPERATURE (°C)<br> Derating Curve<br>0.5 Ig/ lg = 20<br>0.4 | |<br>0.3<br>0.2<br>WW<br>y<br>“al<br>0.1<br>a qe TNseg<br>0 aera<br>0.1 1 10 100 1,000<br>ICIC, COLLECTOR CURRENT (mA), COLLECTOR CURRENT (mA)<br>Fig. 3 Typical Collector-Emitter Saturation Voltage<br>Typical Collector-Emitter Saturation Voltage vs. Collector Current<br> vs. Collector Current<br>MAX POWER DISSIPATION (W)<br>, COLLECTOR-EMITTER<br>CE<br>V SATURATION VOLTAGE (V)<br>**----- End of picture text -----**<br> **==> picture [215 x 220] intentionally omitted <==** **----- Start of picture text -----**<br> 1,000 E145 aOO 18000 F E Ve r 20aHf<br>p—___] f t A<br>preT, = r- 50°Ce FUT rrN<br>100 a<br>——— eel<br>eea aeeee eee<br>10 Cont<br>—— a ll<br>Rs QO Oe Oe OO OO<br>Eta a ee eel<br>1<br>1 CA 10 ot 100<br>ICIC, COLLECTOR CURRENT (mA), COLLECTOR CURRENT (mA)<br>Fig. 2 Typical DC Current Gain vs. Collector Current<br>Typical DC Current Gain vs. Collector Current<br> DC CURRENT GAIN<br>h<br>FE,<br>**----- End of picture text -----**<br> **==> picture [222 x 220] intentionally omitted <==** **----- Start of picture text -----**<br> 1,000 EE E<br>Er rh<br>Presa aes0<br>| eo<br>E d<br>100 W a atli llee eeliANee<br>OO<br>a se a 0 0 Oe |<br>es es sO Oe 0 GO GO<br>a | |<br>a ee ll<br>en eel<br>10<br>1 10 100<br>IICC, COLLECTOR CURRENT (mA) , COLLECTOR CURRENT (mA)<br>Fig. 4 Typical Gain-Bandwidth Product vs. Collector Current<br>Typical Gain-Bandwidth Product vs. Collector Current<br>, GAIN-BANDWIDTH PRODUCT (MHz)<br>fT<br>**----- End of picture text -----**<br> 3 of 5 **www.diodes.com** March 2015 © Diodes Incorporated BCM857BV Datasheet number: DS37433 Rev. 3 - 2 **BCM857BV** ## **Package Outline Dimensions** Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. **==> picture [185 x 161] intentionally omitted <==** **----- Start of picture text -----**<br> |e A<br>al<br>B C<br>Jay<br>D<br>G<br>K M<br>jana<br>H<br>——<br>L<br>**----- End of picture text -----**<br> |**SOT563**|**SOT563**|**SOT563**|**SOT563**| |---|---|---|---| |**Dim**|**Min**|**Max**|**Typ**| |**A**|0.15|0.30|0.20| |**B**|1.10|1.25|1.20| |**C**|1.55|1.70|1.60| |**D**|-|-|0.50| |**G**|0.90|1.10|1.00| |**H**|1.50|1.70|1.60| |**K**|0.55|0.60|0.60| |**L**|0.10|0.30|0.20| |**M**|0.10|0.18|0.11| |**All Dimensions in mm**|||| ## **Suggested Pad Layout** Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. **==> picture [122 x 121] intentionally omitted <==** **----- Start of picture text -----**<br> C2 C2<br>kK ae<br>t G ee C1<br>Z<br>Y<br>Poot<br>X<br>Ie ><br>**----- End of picture text -----**<br> |**Dimensions**|**SOT563**| |---|---| |**Z**|2.2| |**G**|1.2| |**X**|0.375| |**Y**|0.5| |**C1**|1.7| |**C2**|0.5| 4 of 5 **www.diodes.com** March 2015 © Diodes Incorporated BCM857BV Datasheet number: DS37433 Rev. 3 - 2 **BCM857BV** ## **IMPORTANT NOTICE** DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. ## **LIFE SUPPORT** Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: - A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2015, Diodes Incorporated **www.diodes.com** 5 of 5 **www.diodes.com** March 2015 © Diodes Incorporated BCM857BV Datasheet number: DS37433 Rev. 3 - 2
Updated at March 26, 2026
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