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This product is RoHS compilant

BCM847QASZ

Bipolar Transistor Array, Dual NPN, 45 V, 100 mA, 350 mW, 0.95 hFE, DFN1010B

  • Manufacturer: NEXPERIA
  • Product type: Bipolar Junction Transistor Arrays - BJT
  • Product variants: No other variants available. No other names.
  • No. of Pins: 6Pins
  • DC Current Gain hFE: 0.95hFE
  • Transistor Mounting: Surface Mount
  • Transistor Polarity: Dual NPN
  • DC Collector Current: 100mA
  • Power Dissipation Pd: 350mW
  • Power Dissipation NPN: 350mW
  • Transistor Case Style: DFN1010B
  • Transition Frequency NPN: 100MHz
  • Operating Temperature Max: 150°C
  • DC Current Gain hFE Min NPN: 200hFE
  • Continuous Collector Current NPN: 100mA
  • Collector Emitter Voltage Max NPN: 45V
  • Collector Emitter Voltage V(br)ceo: 45V
Delivery and price
Units per pack 5000
Price 0.118 €
Current stock N/A
Lead time 30 days
PDF File icon Datasheet