BCM847BS-7

**BCM847BS 45V NPN MATCHED PAIR SMALL SIGNAL TRANSISTOR IN SOT363** 

## **Features** 

## **Mechanical Data** 

- Ultra-Small Surface Mount Package 

- Current Gain Matching 

- Base-Emitter Voltage Matching 

- Ideally Suited for Automated Insertion 

- For Switching and AF Amplifier Application 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. "Green" Device (Note 3)** 

   - Package: SOT363 

   - Package Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

   - Moisture Sensitivity: Level 1 per J-STD-020 

   - Terminals: Finish  Matte Tin Finish. Solderable per MIL-STD202, Method 208 © **e3** 

   - Weight: 0.006 grams (Approximate) 

- **For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative.** 

**https://www.diodes.com/quality/product-definitions/** 

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Top View 

Device Schematic Top View 

## **Ordering Information** (Note 4) 

|**Part Number**|**Compliance**|**Marking**|**Reel Size(inches)**|**Tape Width(mm)**|**Quantity Per Reel**|
|---|---|---|---|---|---|
|BCM847BS-7|Standard|2K8|7|8|3,000|



- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and 

Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

2K8 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: J = 2022) M = Month (ex: 9 = September) 

Date Code Key 

|Date Code Keyy|||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
|**Year**|**2022**|**2023**|**2024**|**2025**|**2026**|**2027**|**2028**|**2029**|**2030**|**2031**|**2032**|**2033**|
|**Code**|J|K|L|M|N|O|P|R|S|T|U|V|
||||||||||||||
|**Month**|**Jan**|**Feb**|**Mar**|**Apr**|**May**|**Jun**|**Jul**|**Aug**|**Sep**|**Oct**|**Nov**|**Dec**|
|**Code**|1|2|3|4|5|6|7|8|9|O|N|D|



1 of 5 **www.diodes.com** 

BCM847BS Document number: DS41216 Rev. 2 - 2 

June 2022 © Diodes Incorporated 

**BCM847BS** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|
|||||
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Collector-Base Voltage|VCBO|50|V|
|Collector-Emitter Voltage|VCEO|45|V|
|Emitter-Base Voltage|VEBO|6|V|
|Collector Current|IC|100|mA|
|Peak Collector Current|ICM|200|mA|
|Peak Base Current|IBM|200|mA|



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|
|||||
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Power Dissipation(Note 5)|PD|200|mW|
|Thermal Resistance,Junction to Ambient(Note 5)|RJA|625|°C/W|
|Operatingand Storage Temperature Range|TJ,TSTG|-65 to +150|°C|



## **ESD Ratings** (Note 6) 

|**ESD Ratingsgss **(Note 6)|**ESD Ratingsgss **(Note 6)|**ESD Ratingsgss **(Note 6)|**ESD Ratingsgss **(Note 6)|**ESD Ratingsgss **(Note 6)|
|---|---|---|---|---|
||||||
|**Characteristic**|**Symbol**|**Value**|**Unit**|**JEDEC Class**|
|Electrostatic Discharge – Human BodyModel|ESD HBM|4,000|V|3A|
|Electrostatic Discharge – Machine Model|ESD MM|400|V|C|



## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic** (Note 7)|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|Collector-Base Breakdown Voltage|BVCBO|50|—|—|V|IC= 100µA|
|Collector-Emitter Breakdown Voltage|BVCEO|45|—|—|V|IC= 10mA|
|Emitter-Base Breakdown Voltage<br>~~ee~~|BVEBO<br>~~ee~~|6<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~|V<br>~~ee~~|IE= 100µA<br>~~ee~~|
|DC Current Gain<br>~~ee~~|hFE<br>~~ee~~|200<br>~~ee~~|—<br>~~ee~~|450<br>~~ee~~|—<br>~~ee~~|VCE= 5V,IC= 2mA<br>~~ee~~|
|DC Current Gain Matching<br>~~ee~~<br>~~———————eEE~~|hFE1/hFE2<br>~~ee~~<br>~~———————eEE~~|0.9<br>~~ee~~<br>~~———————eEE~~|1<br>~~ee~~<br>~~———————eEE~~|1.1<br>~~ee~~<br>~~———————eEE~~|—<br>~~ee~~<br>~~———————eEE~~|VCE= 5V, IC= 2mA<br>~~ee~~<br>~~———————eEE~~|
|Collector-Emitter Saturation Voltage<br>~~———————eEE~~|VCE(sat)<br>~~———————eEE~~|—<br>~~———————eEE~~|—<br>~~———————eEE~~|100<br>400<br>~~———————eEE~~|mV<br>~~———————eEE~~|IC= 10mA, IB= 0.5mA<br>IC= 100mA,IB= 5mA<br>~~———————eEE~~|
|Base-Emitter Saturation Voltage<br>~~———————eEE~~<br>~~ee~~|VBE(sat)<br>~~———————eEE~~|—<br>~~———————eEE~~|755<br>~~———————eEE~~|—<br>~~———————eEE~~|mV<br>~~———————eEE~~|IC= 10mA,IB= 0.5mA<br>~~———————eEE~~|
|||—<br>~~———————eEE~~|905<br>~~———————eEE~~|—<br>~~———————eEE~~|mV<br>~~———————eEE~~|IC= 100mA,IB= 5mA<br>~~———————eEE~~|
|Base-Emitter Voltage<br>~~———————eEE~~|VBE(on)<br>~~———————eEE~~|610<br>~~———————eEE~~|665<br>~~———————eEE~~|710<br>~~———————eEE~~|mV<br>~~———————eEE~~|VCE= 5V,IC= 2mA<br>~~———————eEE~~|
|Base-Emitter Voltage Matching<br>~~GO~~|VBE1(on) -<br>VBE2(on)<br>~~GO~~|-2<br>~~GO~~|—<br>~~GO~~|2<br>~~GO~~|mV<br>~~GO~~|VCE= 5V, IC= 2mA<br>~~GO~~|
|Collector-Cutoff Current<br>~~po~~|ICBO<br>~~po~~|—<br>—<br>~~po~~|—<br>—<br>~~po~~|15<br>5<br>~~po~~|nA<br>µA<br>~~po~~|VCB= 40V<br>VCB= 40V,TA= +125°C<br>~~po~~|
|Emitter-Cutoff Current<br>~~po~~|IEBO<br>~~po~~|—<br>~~po~~|—<br>~~po~~|20<br>~~po~~|nA<br>~~po~~|VEB= 5V<br>~~po~~|
|Gain Bandwidth Product<br>~~pt~~|fT<br>~~pt~~|100<br>~~pt~~|—<br>~~pt~~|—<br>~~pt~~|MHz<br>~~pt~~|VCE= 5V, IC= 10mA,<br>f = 100MHz<br>~~pt~~|
|Collector-Base Capacitance<br>~~pt~~|CCBO<br>~~pt~~|—<br>~~pt~~|2<br>~~pt~~|3<br>~~pt~~|pF<br>~~pt~~|VCB= 10V,f = 1MHz<br>~~pt~~|
|Emitter-Base Capacitance|CEBO|—|11|—|pF|VEB= 0.5V,f = 1MHz|



Notes: 5. For a device mounted with the collector lead on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR-4 PCB; device is measured under still air conditions whilst operating in a steady-state. 

6. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 

7. Short duration pulse test used to minimize self-heating effect. 

2 of 5 **www.diodes.com** 

BCM847BS Document number: DS41216 Rev. 2 - 2 

June 2022 © Diodes Incorporated 

**BCM847BS** 

## **Typical Electrical Characteristics** (@TA = +25°C **,** unless otherwise specified.) 

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1,000<br>Pt a A || | |<br>Sail TTeabet! TTeabet!eabet!abet! e amesrr<br>S CLL<br>100 E t<br>Eaa A<br>so o TIE TIE i<br>10<br>FSR SS SS Et Et<br>esEEEE|OIOIEEE a aEI a aEI aEIEI EEE a aEI a aEI aEIEI a EEE|| FEE||tt||tttt<br>|OIOIEEE a aEI a aEI aEIEI<br>1<br>ACon CinCon Cin Cin<br>0.01 0.1 1.0 10 100<br>IC, COLLECTOR CURRENT (mA)C, COLLECTOR CURRENT (mA), COLLECTOR CURRENT (mA)<br>Figure 2  Typical DC Current Gain vs. Collector Current<br> DC CURRENT GAIN<br>FE,<br>h<br>**----- End of picture text -----**<br>


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250<br>Pt a A || | |<br>200 PPP Pree Sail TTeabet! TTeabet!eabet!abet! e amesrr<br>ACE S CLL<br>150 Pf IN; EE EE 100 E Eaa A t<br>Pt | Ad | | potot. so o TIE TIE i<br>100<br>10<br>{| | | IN | Ett FSR SS SS Et Et<br>50 PtPt ft| |}7 tfINAG| dftL esEEEE|OIOIEEE a aEI a aEI aEIEI a EEE|| FEE||tt||tttt<br>0 ttt | EREN  | 1 ACon CinCon Cin Cin<br>0 40 80 120 160 200 0.01 0.1 1.0 10 100<br>TA, AMBIENT TEMPERATURE (°C) IC, COLLECTOR CURRENT (mA)C, COLLECTOR CURRENT (mA), COLLECTOR CURRENT (mA)<br>Figure 1 Power Derating Curve Figure 2  Typical DC Current Gain vs. Collector Current<br>0.5 1,000 TA = 25°C<br>Tm TM TM ee |i<br>a a ||<br>0.4 a || a a VCE = | 10V<br>a || — H HS of Zi<br>5V 2V<br>0.3 BD Heat T N<br>0.2 |LI |Ta JAI| 100 |—WA AT Ii}LATINLLIN<br>Lt = 100°C  a pi - Ae<br>EE Ae<br>0.1<br>Sil Ee] |<br>0 mirror 10<br>| LUI<br>0.1 am [eee] 1.0 aan 10 al 100 0.1 IE 1.0 IE 10  ETT 100<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Figure 3  Typical Collector-Emitter Saturation Voltage  Figure 4 Typical Gain-Bandwidth Product<br>vs. Collector Current vs. Collector Current<br>, POWER DISSIPATION (mW)<br>D<br>P<br>T<br>, GAIN-BANDWIDTH PRODUCT (MHz)<br>f<br> DC CURRENT GAIN<br>FE,<br>h<br>CE(SAT)<br>, COLLECTOR-EMITTER<br>SATURATION VOLTAGE (V)<br>V<br>**----- End of picture text -----**<br>


3 of 5 **www.diodes.com** 

BCM847BS Document number: DS41216 Rev. 2 - 2 

June 2022 © Diodes Incorporated 

**BCM847BS** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

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SOT363<br>Dim  Min  Max  Typ<br>E poy E1 ——— A1  0.00  0.10  0.05<br>A2  0.90 1.00 0.95<br>b 0.10 0.30 0.25<br>c  0.10 0.22  0.11<br>D  1.80 2.20 2.15<br>E  2.00 2.20 2.10<br>Cel F b E1  1.15 1.35 1.30<br>e 0.650 BSC<br>F  0.40 0.45 0.425<br>D L  0.25 0.40 0.30<br>a  0° 8° --<br>All Dimensions in mm<br>A2<br>c a<br>A1 e |fant L IEE<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**SOT363** 

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C<br>Y1 o bo, G<br>Y<br>mauii X ing<br>**----- End of picture text -----**<br>


|**Dimensions**|**Value**<br>**(in mm)**|
|---|---|
|**C**|0.650|
|**G**|1.300|
|**X**|0.420|
|**Y**|0.600|
|**Y1**|2.500|



4 of 5 **www.diodes.com** 

BCM847BS Document number: DS41216 Rev. 2 - 2 

June 2022 © Diodes Incorporated 

**BCM847BS** 

## **IMPORTANT NOTICE** 

1. DIODES INCORPORATED AND ITS SUBSIDIARIES (“DIODES”) MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes products. Diodes products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for (a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of the Diodes products for their intended applications, (c) ensuring their applications, which incorporate Diodes products, comply the applicable legal and regulatory requirements as well as safety and functional-safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality control techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with their applications. 

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Copyright © 2022 Diodes Incorporated 

**www.diodes.com** 

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BCM847BS Document number: DS41216 Rev. 2 - 2 

June 2022 © Diodes Incorporated