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BCM846BS-7
Bipolar Transistor Array, Dual NPN, 65 V, 100 mA, 200 mW
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- Manufacturer: DIODES INC.
- Product type: Bipolar Junction Transistor Arrays - BJT
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 6Pins
- Product Range: -
- Qualification: AEC-Q101
- Transistor Mounting: Surface Mount
- Transistor Polarity: Dual NPN
- Power Dissipation NPN: 200mW
- Power Dissipation PNP: -
- Transistor Case Style: SOT-363
- Transition Frequency NPN: 100MHz
- Transition Frequency PNP: -
- Operating Temperature Max: 150°C
- DC Current Gain hFE Min NPN: 200hFE
- DC Current Gain hFE Min PNP: -
- Continuous Collector Current NPN: 100mA
- Continuous Collector Current PNP: -
- Collector Emitter Voltage Max NPN: 65V
- Collector Emitter Voltage Max PNP: -
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.039 € |
| Current stock | 10+ |
| Lead time | 30 days |
**BCM846BS** 7 ## **65V NPN MATCHED PAIR SMALL SIGNAL TRANSISTOR IN SOT363** ## **Features** - Ultra-Small Surface Mount Package - Current Gain Matching - Base-Emitter Voltage Matching - Ideally Suited for Automated Insertion - For Switching and AF Amplifier Application - **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** - **Halogen and Antimony Free. "Green" Device (Note 3)** ## **Mechanical Data** - Case: SOT363 - Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 - Moisture Sensitivity: Level 1 per J-STD-020 - Terminals: Finish Matte Tin Finish. Solderable per MIL-STD202, Method 208 © **e3** - Weight: 0.006 grams (Approximate) - **Qualified to AEC-Q101 Standards for High Reliability** **==> picture [33 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> SOT363<br>**----- End of picture text -----**<br> **==> picture [193 x 18] intentionally omitted <==** **----- Start of picture text -----**<br> Top View Device Schematic<br>Top View<br>**----- End of picture text -----**<br> ## **Ordering Information** (Note 4) |**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)| |---|---|---|---|---|---| ||||||| |**Part Number**|**Compliance**|**Marking**|**Reel Size(inches)**|**Tape Width(mm)**|**Quantity Per Reel**| |BCM846BS-7|AEC-Q101|2K7|7|8|3,000| Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. ## **Marking Information** 2K7 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: F = 2018) M = Month (ex: 9 = September) ## Date Code Key |**Year**||**2018**||**2019**|**2019**|||**2020**|||**2021**|**2021**|||**2022**|||**2023**|**2023**||**2024**|||**2025**| |---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---| |**Code**||F||G||||H|||I||||J||||K||L|||M| |||||||||||||||||||||||||| |**Month**||**Jan**||**Feb**||**Mar**||**Apr**||**May**|||**Jun**||**Jul**|**Aug**|||**Sep**||**Oct**|**Nov**||**Dec**| |**Code**||1||2||3||4||5|||6||7||8||9||O|N||D| 1 of 5 **www.diodes.com** BCM846BS Document number: DS41262 Rev. 1 - 2 September 2018 © Diodes Incorporated **BCM846BS** ## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) ||||| |---|---|---|---| |**Characteristic**|**Symbol**|**Value**|**Unit**| |Collector-Base Voltage|VCBO|80|V| |Collector-Emitter Voltage|VCEO|65|V| |Emitter-Base Voltage|VEBO|6|V| |Collector Current|IC|100|mA| |Peak Collector Current|ICM|200|mA| |Peak Base Current|IBM|200|mA| ## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) |**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||| |---|---|---|---| |**Characteristic**|**Symbol**|**Value**|**Unit**| |Power Dissipation(Note 5)|PD|200|mW| |Thermal Resistance, Junction to Ambient(Note 6)|RJA|625|°C/W| |Operatingand Storage Temperature Range|TJ,TSTG|-65 to +150|°C| ## **ESD Ratings** (Note 6) |**ESD Ratingsgss **(Note 6)|**ESD Ratingsgss **(Note 6)|**ESD Ratingsgss **(Note 6)|**ESD Ratingsgss **(Note 6)|**ESD Ratingsgss **(Note 6)| |---|---|---|---|---| |||||| |**Characteristic**|**Symbol**|**Value**|**Unit**|**JEDEC Class**| |Electrostatic Discharge – Human BodyModel|ESD HBM|4,000|V|3A| |Electrostatic Discharge – Machine Model|ESD MM|400|V|C| ## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) |||||||| |---|---|---|---|---|---|---| |**Characteristic(Note 7)**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**| |Collector-Base Breakdown Voltage|BVCBO|80|—|—|V|IC= 100µA,IB= 0| |Collector-Emitter Breakdown Voltage|BVCEO|65|—|—|V|IC= 10mA,IB= 0| |Emitter-Base Breakdown Voltage<br>~~——————————————————~~|BVEBO<br>~~——————————————————~~|6<br>~~——————————————————~~|—<br>~~——————————————————~~|—<br>~~——————————————————~~|V<br>~~——————————————————~~|IE= 100µA,IC= 0<br>~~——————————————————~~| |DC Current Gain<br>~~——————————————————~~|hFE<br>~~——————————————————~~|200<br>~~——————————————————~~|—<br>~~——————————————————~~|450<br>~~——————————————————~~|—<br>~~——————————————————~~|VCE= 5V,IC= 2mA<br>~~——————————————————~~| |DC Current Gain Matching<br>~~——————————————————~~<br>~~——————————————E~~|hFE1/hFE2<br>~~——————————————————~~<br>~~——————————————E~~|0.9<br>~~——————————————————~~<br>~~——————————————E~~|1<br>~~——————————————————~~<br>~~——————————————E~~|1.1<br>~~——————————————————~~<br>~~——————————————E~~|—<br>~~——————————————————~~<br>~~——————————————E~~|VCE= 5V, IC= 2mA<br>~~——————————————————~~<br>~~——————————————E~~| |Collector-Emitter Saturation Voltage<br>~~——————————————E~~|VCE(SAT)<br>~~——————————————E~~|—<br>~~——————————————E~~|—<br>~~——————————————E~~|100<br>400<br>~~——————————————E~~|mV<br>~~——————————————E~~|IC= 10mA, IB= 0.5mA<br>IC= 100mA,IB= 5mA<br>~~——————————————E~~| |Base-Emitter Saturation Voltage<br>~~——————————————E~~|VBE(SAT)<br>~~——————————————E~~|—<br>~~——————————————E~~|755<br>~~——————————————E~~|—<br>~~——————————————E~~|mV<br>~~——————————————E~~|IC= 10mA,IB= 0.5mA<br>~~——————————————E~~| |||—<br>~~——————————————E~~|905<br>~~——————————————E~~|—<br>~~——————————————E~~|mV<br>~~——————————————E~~|IC= 100mA,IB= 5mA<br>~~——————————————E~~| |Base-Emitter Voltage<br>~~——————————————E~~|VBE(ON)<br>~~——————————————E~~|610<br>~~——————————————E~~|665<br>~~——————————————E~~|710<br>~~——————————————E~~|mV<br>~~——————————————E~~|VCE= 5V,IC= 2mA<br>~~——————————————E~~| |Base-Emitter Voltage Matching<br>~~TL~~|VBE1(ON) -<br>VBE2(ON)<br>~~TL~~|-2<br>~~TL ~~|—<br> ~~LL~~|2<br>~~LL~~|mV<br>~~LL~~|VCE= 5V, IC= 2mA<br>~~LL~~| |Collector-Cutoff Current<br>~~po~~|ICBO<br>~~po~~|—<br>—<br>~~po~~|—<br>—<br>~~po~~|15<br>5<br>~~po~~|nA<br>µA<br>~~po~~|VCB= 40V<br>VCB= 40V,TA= +125°C<br>~~po~~| |Emitter-Cutoff Current<br>~~po~~|IEBO<br>~~po~~|—<br>~~po~~|—<br>~~po~~|20<br>~~po~~|nA<br>~~po~~|VEB= 5V,IC = 0<br>~~po~~| |Gain Bandwidth Product<br>~~pat~~|fT<br>~~pat~~|100<br>~~pat~~|—<br>~~pat~~|—<br>~~pat~~|MHz<br>~~pat~~|VCE= 5V, IC= 10mA,<br>f = 100MHz<br>~~pat~~| |Collector-Base Capacitance<br>~~pat~~|CCBO<br>~~pat~~|—<br>~~pat~~|2<br>~~pat~~|3<br>~~pat~~|pF<br>~~pat~~|VCB= 10V,f = 1MHz<br>~~pat~~| |Emitter-Base Capacitance|CEBO|—|11|—|pF|VEB= 0.5V,f = 1MHz| - Notes: 5. For a device mounted with the collector lead on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR-4 PCB; device is measured under still air conditions whilst operating in a steady-state. 6. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 7. Short duration pulse test used to minimize self-heating effect. 2 of 5 **www.diodes.com** BCM846BS Document number: DS41262 Rev. 1 - 2 September 2018 © Diodes Incorporated **BCM846BS** CJ ## **Typical Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) **==> picture [218 x 214] intentionally omitted <==** **----- Start of picture text -----**<br> 1,000<br>Lt TT|| APeer|Peer|| | TT||||<br>S LEE<br>100 Toe e tT TT t<br>sss ooecec TIHHHH LTHCAICAI Ci _ ol<br>10<br>a el<br>EEEaaeCOICOI EIeses e eEH|EH|| Ht|||<br>eCOICOI noi|<br>1<br>LAINE LETT<br>0.01 0.1 1.0 10 100<br>IC, COLLECTOR CURRENT (mA)C, COLLECTOR CURRENT (mA), COLLECTOR CURRENT (mA)<br>Figure 2 Typical DC Current Gain vs. Collector Current<br> DC CURRENT GAIN<br>FE,<br>h<br>**----- End of picture text -----**<br> **==> picture [476 x 439] intentionally omitted <==** **----- Start of picture text -----**<br> 250<br>Lt TT|| APeer|Peer|| | TT||||<br>200<br>CAE S LEE<br>150 et INE EL LE 100 Toe e tT TT t<br>aaNEeee sss ooecec TIHHHH LTHCAICAI Ci _ ol<br>100<br>10<br>PF] tt IN | EL df a el<br>50 PTP| fff| fofJ] INAGL| tfTI EEEaaeCOICOI EIeses noi| e eEH|EH|| Ht|||<br>0 Pt} tt tE LE NRKE | 1 LAINE LETT<br>0 40 80 120 160 200 0.01 0.1 1.0 10 100<br>TA, AMBIENT TEMPERATURE (°C) IC, COLLECTOR CURRENT (mA)C, COLLECTOR CURRENT (mA), COLLECTOR CURRENT (mA)<br>Figure 1 Power Derating Curve Figure 2 Typical DC Current Gain vs. Collector Current<br>0.5 1,000 TA = 25°C<br>Tt OT S a al<br>a | | | eeee<br>0.4 a el VCE = 10V<br>a a el | S e n pareip tl TN<br>5V 2V<br>0.3 0 THe Tint<br>a ll 100 W AIA TE LAINLLIN<br>0.2<br>“me AT SA<br>a_ AW a Y Ar4 PP H B<br>ciel |<br>0.1<br>See CIE CIE Co<br>0 |treetLill 10<br>0.1 1.0 10 100 0.1 1.0 10 100<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Figure 3 Typical Collector-Emitter Saturation Voltage Figure 4 Typical Gain-Bandwidth Product<br>vs. Collector Current vs. Collector Current<br>, POWER DISSIPATION (mW)<br>D<br>P<br>, GAIN-BANDWIDTH PRODUCT (MHz)<br>fT<br> DC CURRENT GAIN<br>FE,<br>h<br>, COLLECTOR-EMITTER<br>SATURATION VOLTAGE (V)<br>CE(SAT)<br>V<br>**----- End of picture text -----**<br> 3 of 5 **www.diodes.com** BCM846BS Document number: DS41262 Rev. 1 - 2 September 2018 © Diodes Incorporated **BCM846BS** ## **Package Outline Dimensions** Please see http://www.diodes.com/package-outlines.html for the latest version. **==> picture [31 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> SOT363<br>**----- End of picture text -----**<br> **==> picture [405 x 181] intentionally omitted <==** **----- Start of picture text -----**<br> SOT363<br>E E1 Dim Min Max Typ<br>A1 0.00 0.10 0.05<br>A2 0.90 1.00 0.95<br>b 0.10 0.30 0.25<br>c 0.10 0.22 0.11<br>D 1.80 2.20 2.15<br>F E 2.00 2.20 2.10<br>b<br>E1 1.15 1.35 1.30<br>e 0.650 BSC<br>D F 0.40 0.45 0.425<br>L 0.25 0.40 0.30<br>a 0° 8° --<br>All Dimensions in mm<br>A2<br>c a<br>A1 e Aa, L =<br>**----- End of picture text -----**<br> ## **Suggested Pad Layout** **==> picture [456 x 192] intentionally omitted <==** **----- Start of picture text -----**<br> Please see http://www.diodes.com/package-outlines.html for the latest version.<br>SOT363<br>C<br>Value<br>Dimensions<br>(in mm)<br>C 0.650<br>G 1.300<br>Y1 G X 0.420<br>Y 0.600<br>“_ - Y1 2.500<br>Y<br>mau X il 1 ——+—<br>**----- End of picture text -----**<br> 4 of 5 **www.diodes.com** BCM846BS Document number: DS41262 Rev. 1 - 2 September 2018 © Diodes Incorporated **BCM846BS** ## **IMPORTANT NOTICE** DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. ## **LIFE SUPPORT** Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: - A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2018, Diodes Incorporated **www.diodes.com** 5 of 5 **www.diodes.com** BCM846BS Document number: DS41262 Rev. 1 - 2 September 2018 © Diodes Incorporated
Updated at March 26, 2026
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