BC858CLT1G

BC856ALT1G Series 

## General Purpose Transistors **PNP Silicon** 

## **Features** 

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www.onsemi.com<br>**----- End of picture text -----**<br>


- S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

Qualified and PPAP Capable COLLECTOR • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS 3 Compliant 1 BASE **MAXIMUM RATINGS** (TA = 25 ° C unless otherwise noted) 2 **Rating Symbol Value Unit** EMITTER Collector-Emitter Voltage VCEO V BC856, SBC856 −65 BC857, SBC857 −45 BC858, NSVBC858, BC859 −30 3 Collector-Base Voltage VCBO V 1 BC856, SBC856 −80 BC857, SBC857 −50 2 BC858, NSVBC858, BC859 −30 **SOT−23 (TO−236)** Emitter−Base Voltage VEBO −5.0 V **CASE 318 STYLE 6** Collector Current − Continuous IC −100 mAdc Collector Current − Peak IC −200 mAdc ~~Ee -~~ **THERMAL CHARACTERISTICS MARKING DIAGRAM Characteristic Symbol Max Unit** Total Device Dissipation FR−5 Board, PD (Note 1) TA = 25 ° C 225 mW xx M Derate above 25 ° C 1.8 mW/ ° C ~~ee~~ Thermal Resistance, R JA ~~ee~~ 556 ° C/W 1 ee Junction−to−Ambient ~~ee eee~~ xx = Device Code Total Device Dissipation Alumina PD xx = (Refer to page 6) Substrate, (Note 2) TA = 25 ° C 300 mW M = Date Code* ~~ee~~ Derate above 25 ° C 2.4 mW/ ° C ee = Pb−Free Package Thermal Resistance, R JA 417 ° C/W (Note: Microdot may be in either location) Junction−to−Ambient *Date Code orientation and/or overbar may Junction and Storage Temperature TJ, Tstg −55 to +150 ° C vary depending upon manufacturing location. ~~pt Tt~~ 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

## **ORDERING INFORMATION** 

See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. 

1. FR−5 = 1.0 x 0.75 x 0.062 in. 

2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina. 

Publication Order Number: 

**1** 

© Semiconductor Components Industries, LLC, 1994 **October, 2016 − Rev. 15** 

**BC856ALT1/D** 

**BC856ALT1G Series** 

**ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise note|d)|||||
|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**||||||
|Collector−Emitter Breakdown Voltage<br>BC856, SBC856 Series<br>(IC= −10 mA)<br>BC857, SBC857 Series<br>BC858, NSBVC858 BC859 Series|V(BR)CEO|−65<br>−45<br>−30|−<br>−<br>−|−<br>−<br>−|V|
|Collector−Emitter Breakdown Voltage<br>BC856 S, SBC856eries<br>(IC= −10�A, VEB= 0)<br>BC857A, SBC857A, BC857B, SBC857B Only<br>BC858, NSVB858, BC859 Series|V(BR)CES|−80<br>−50<br>−30|−<br>−<br>−|−<br>−<br>−|V|
|Collector−Base Breakdown Voltage<br>BC856, SBC856 Series<br>(IC= −10�A)<br>BC857, SBC857 Series<br>BC858, NSVBC858, BC859 Series|V(BR)CBO|−80<br>−50<br>−30|−<br>−<br>−|−<br>−<br>−|V|
|Emitter−Base Breakdown Voltage<br>BC856, SBC856 Series<br>(IE= −1.0�A)<br>BC857, SBC857 Series<br>BC858, NSVBC858, BC859 Series|V(BR)EBO|−5.0<br>−5.0<br>−5.0|−<br>−<br>−|−<br>−<br>−|V|
|Collector Cutoff Current (VCB= −30 V)<br>Collector Cutoff Current(VCB= −30 V, TA= 150°C)|ICBO|−<br>−|−<br>−|−15<br>−4.0|nA<br>�A|
|**ON CHARACTERISTICS**||||||
|DC Current Gain<br>BC856A, SBC856A, BC857A, SBC857A, BC858A<br>(IC= −10�A, VCE= −5.0 V)<br>BC856B, SBC856B, BC857B, SBC857B,<br>BC858B, NSVBC858B<br>BC857C, SBC857C BC858C<br>(IC= −2.0 mA, VCE= −5.0 V)<br>BC856A, SBC856A, BC857A,<br>SBC857A, BC858A<br>BC856B, SBC856B, BC857B, SBC857B, BC858B,<br>NSVBC858B, BC859B<br>BC857C, SBC857C, BC858C, BC859C|hFE|−<br>−<br>−<br>125<br>220<br>420|90<br>150<br>270<br>180<br>290<br>520|−<br>−<br>−<br>250<br>475<br>800|−|
|Collector−Emitter Saturation Voltage<br>(IC= −10 mA, IB= −0.5 mA)<br>(IC= −100 mA, IB= −5.0 mA)|VCE(sat)|−<br>−|−<br>−|−0.3<br>−0.65|V|
|Base−Emitter Saturation Voltage<br>(IC= −10 mA, IB= −0.5 mA)<br>(IC= −100 mA, IB= −5.0 mA)|VBE(sat)|−<br>−|−0.7<br>−0.9|−<br>−|V|
|Base−Emitter On Voltage<br>(IC= −2.0 mA, VCE= −5.0 V)<br>(IC= −10 mA, VCE= −5.0 V)|VBE(on)|−0.6<br>−|−<br>−|−0.75<br>−0.82|V|
|**SMALL−SIGNAL CHARACTERISTICS**||||||
|Current−Gain − Bandwidth Product<br>(IC= −10 mA, VCE= −5.0 Vdc, f = 100 MHz)|fT|100|−|−|MHz|
|Output Capacitance<br>(VCB= −10 V, f = 1.0 MHz)|Cob|−|−|4.5|pF|
|Noise Figure<br>(IC= −0.2 mA, VCE= −5.0 Vdc, RS= 2.0 k�, f = 1.0 kHz, BW = 200 Hz)<br>BC856, SBC856, BC857, SBC857, BC858, NSVBC858 Series<br>BC859 Series|NF|−<br>−|−<br>−|10<br>4.0|dB|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

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**2** 

**BC856ALT1G Series** 

## **BC857/BC858/BC859/SBC857/NSVBC858** 

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2.0<br>1.5 VCE = -10 V<br>TA = 25°C<br>1.0<br>0.7<br>0.5<br>0.3<br>0.2<br>-0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200<br>IC, COLLECTOR CURRENT (mAdc)<br>hFE, NORMALIZED DC CURRENT GAIN<br>**----- End of picture text -----**<br>


**Figure 1. Normalized DC Current Gain** 

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-1.0<br>-0.9 TA = 25°C<br>-0.8 VBE(sat) @ IC/IB = 10<br>-0.7<br>-0.6 VBE(on) @ VCE = -10 V<br>-0.5<br>-0.4<br>-0.3<br>-0.2<br>-0.1 VCE(sat) @ IC/IB = 10<br>0<br>-0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100<br>IC, COLLECTOR CURRENT (mAdc)<br>V, VOLTAGE (VOLTS)<br>**----- End of picture text -----**<br>


**Figure 2. “Saturation” and “On” Voltages** 

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-2.0 1.0<br>TA = 25°C -55°C to +125°C<br>1.2<br>-1.6<br>1.6<br>-1.2<br>2.0<br>-0.8 IC = IC = -50 mA IC = -200 mA<br>-10 mA<br>2.4<br>IC = -100 mA<br>-0.4 IC = -20 mA<br>2.8<br>0<br>-0.02 -0.1 -1.0 -10 -20 -0.2 -1.0 -10 -100<br>IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Figure 3. Collector Saturation Region Figure 4. Base−Emitter Temperature Coefficient<br>10 400<br>Cib 300<br>7.0<br>TA = 25°C 200<br>5.0<br>150 VCE = -10 V<br>TA = 25°C<br>3.0 Cob 100<br>80<br>60<br>2.0<br>40<br>30<br>1.0 20<br>-0.4 -0.6 -1.0 -2.0 -4.0 -6.0 -10 -20 -30 -40 -0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 -50<br>VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc)<br>C)°<br>VCE, COLLECTOR-EMITTER VOLTAGE (V) VB, TEMPERATURE COEFFICIENT (mV/<br>θ<br>C, CAPACITANCE (pF)<br>f�, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)T<br>**----- End of picture text -----**<br>


**Figure 5. Capacitances** 

**Figure 6. Current−Gain − Bandwidth Product** 

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**3** 

**BC856ALT1G Series** 

## **BC856/SBC856** 

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-1.0<br>TJ = 25°C<br>V CE  = -5.0 V<br>T A  = 25°C -0.8<br>VBE(sat) @ IC/IB = 10<br>2.0<br>-0.6<br>VBE @ VCE = -5.0 V<br>1.0<br>-0.4<br>0.5<br>-0.2<br>0.2<br>VCE(sat) @ IC/IB = 10<br>0<br>-0.1 -0.2 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Figure 7. DC Current Gain Figure 8. “On” Voltage<br>-2.0 -1.0<br>-1.6 -1.4<br>IC = -20 mA -50 mA -100 mA -200 mA<br>-10 mA<br>-1.2 -1.8<br>�VB for VBE<br>-55°C to 125°C<br>-0.8 -2.2<br>-0.4 -2.6<br>TJ = 25°C<br>0 -3.0<br>-0.02 -0.05 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200<br>IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Figure 9. Collector Saturation Region Figure 10. Base−Emitter Temperature Coefficient<br>40<br>VCE = -5.0 V<br>TJ = 25°C 500<br>20<br>Cib<br>200<br>10 100<br>8.0<br>6.0 50<br>Cob<br>4.0<br>20<br>2.0<br>-0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -1.0 -10 -100<br>VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)<br>V, VOLTAGE (VOLTS)<br>hFE, DC CURRENT GAIN (NORMALIZED)<br>C)°<br>VB, TEMPERATURE COEFFICIENT (mV/<br>VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) θ<br>C, CAPACITANCE (pF)<br>f�, CURRENT-GAIN - BANDWIDTH PRODUCTT<br>**----- End of picture text -----**<br>


**Figure 11. Capacitance** 

**Figure 12. Current−Gain − Bandwidth Product** 

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**4** 

**BC856ALT1G Series** 

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1.0<br>0.7<br>D = 0.5<br>0.5<br>0.2<br>0.3<br>0.2<br>0.05 SINGLE PULSE<br>0.1 Z�JC(t) = r(t) R�JC<br>0.1 P (pk) R�JC = 83.3°C/W MAX<br>0.07 SINGLE PULSE Z�JA(t) = r(t) R�JA<br>0.05 t1 R�JA = 200 ° C/W MAX<br>D CURVES APPLY FOR POWER<br>0.03 t2 PULSE TRAIN SHOWN<br>0.02 DUTY CYCLE, D = t1/t2 READ TIME AT t1<br>T J(pk)  - T C  = P (pk)  R �JC (t)<br>0.01<br>0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0�k 2.0�k 5.0�k 10�k<br>t, TIME (ms)<br>Figure 13. Thermal Response<br>-200 The safe operating area curves indicate IC−VCE limits ofC−VCE limits of−VCE limits ofCE limits of limits of<br>1 s 3 ms the transistor that must be observed for reliable operation.<br>-100 Collector load lines for specific circuits must fall below the<br>-50 TA = 25°C TJ = 25°C limits indicated by the applicable curve.The data of Figure 14 is based upon TJ(pk) = 150°C; TC or<br>TA is variable depending upon conditions. Pulse curves areA is variable depending upon conditions. Pulse curves are is variable depending upon conditions. Pulse curves are<br>BC558, BC559 valid for duty cycles to 10% provided TJ(pk)J(pk) ≤ 150°C. TJ(pk) 150°C. TJ(pk)°C. TJ(pk)C. TJ(pk)J(pk)<br>-10 BC557 may be calculated from the data in Figure 13. At high case or<br>BC556 ambient temperatures, thermal limitations will reduce the<br>-5.0 BONDING WIRE LIMIT power that can be handled to values less than the limitations<br>THERMAL LIMIT imposed by the secondary breakdown.<br>SECOND BREAKDOWN LIMIT<br>-2.0<br>-1.0 -5.0 -10 -30 -45 -65 -100<br>VCE, COLLECTOR-EMITTER VOLTAGE (V)<br>r(t), TRANSIENT THERMAL<br>RESISTANCE (NORMALIZED)<br>IC, COLLECTOR CURRENT (mA)<br>**----- End of picture text -----**<br>


The safe operating area curves indicate IC−VCE limits ofC−VCE limits of−VCE limits ofCE limits of limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the 

The data of Figure 14 is based upon TJ(pk) = 150°C; TC orJ(pk) = 150°C; TC or = 150°C; TC or°C; TC orC; TC orC or or TA is variable depending upon conditions. Pulse curves areA is variable depending upon conditions. Pulse curves are is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk)J(pk) ≤ 150°C. TJ(pk) 150°C. TJ(pk)°C. TJ(pk)C. TJ(pk)J(pk) may be calculated from the data in Figure 13. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by the secondary breakdown. 

**Figure 14. Active Region Safe Operating Area** 

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**5** 

**BC856ALT1G Series** 

## **ORDERING INFORMATION** 

|**ORDERING INFORMATION**||||
|---|---|---|---|
|**Device**|**Marking**|**Package**|**Shipping**†|
|BC856ALT1G|3A|SOT−23<br>(Pb−Free)|3,000 / Tape & Reel|
|SBC856ALT1G*||||
|BC856ALT3G|||10,000 / Tape & Reel|
|BC856BLT1G|3B|SOT−23<br>(Pb−Free)|3,000 / Tape & Reel|
|SBC856BLT1G*||||
|BC856BLT3G|||10,000 / Tape & Reel|
|SBC856BLT3G*||||
|BC857ALT1G|3E|SOT−23<br>(Pb−Free)|3,000 / Tape & Reel|
|SBC857ALT1G*||||
|BC857BLT1G|3F|SOT−23<br>(Pb−Free)|3,000 / Tape & Reel|
|SBC857BLT1G*||||
|BC857BLT3G|||10,000 / Tape & Reel|
|NSVBC857BLT3G*||||
|BC857CLT1G|3G|SOT−23<br>(Pb−Free)|3,000 / Tape & Reel|
|SBC857CLT1G*||||
|BC857CLT3G|||10,000 / Tape & Reel|
|BC858ALT1G|3J|SOT−23<br>(Pb−Free)|3,000 / Tape & Reel|
|BC858BLT1G|3K|SOT−23<br>(Pb−Free)||
|NSVBC858BLT1G*||||
|BC858BLT3G|3L|SOT−23<br>(Pb−Free)|10,000 / Tape & Reel|
|BC858CLT1G||SOT−23<br>(Pb−Free)|3,000 / Tape & Reel|
|BC858CLT3G||SOT−23<br>(Pb−Free)|10,000 / Tape & Reel|
|BC859BLT1G|4B|SOT−23<br>(Pb−Free)|3,000 / Tape & Reel|
|BC859BLT3G||SOT−23<br>(Pb−Free)|10,000 / Tape & Reel|
|BC859CLT1G|4C|SOT−23<br>(Pb−Free)|3,000 / Tape & Reel|
|BC859CLT3G||SOT−23<br>(Pb−Free)|10,000 / Tape & Reel|



†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

*S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. 

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**6** 

**BC856ALT1G Series** 

## **PACKAGE DIMENSIONS** 

**SOT−23 (TO−236)** CASE 318−08 ISSUE AR 

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D NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETERS.<br>3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.<br>0.25 MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF<br>a 3 = THE BASE MATERIAL.<br>| E HE T 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,PROTRUSIONS, OR GATE BURRS.<br>1 2<br>MILLIMETERS INCHES<br>DIM MIN NOM MAX MIN NOM MAX<br>L A 0.89 1.00 1.11 0.035 0.039 0.044<br>3X b L1 A1b 0.010.37 0.060.44 0.100.50 0.0000.015 0.0020.017 0.0040.020<br>e VIEW C c 0.08 0.14 0.20 0.003 0.006 0.008<br>TOP VIEW D 2.80 2.90 3.04 0.110 0.114 0.120<br>E 1.20 1.30 1.40 0.047 0.051 0.055<br>e 1.78 1.90 2.04 0.070 0.075 0.080<br>L 0.30 0.43 0.55 0.012 0.017 0.022<br>A L1 0.35 0.54 0.69 0.014 0.021 0.027<br>H E 2.10 2.40 2.64 0.083 0.094 0.104<br>T 0 ° −−− 10 ° 0 ° −−− 10 °<br>A1 SIDE VIEW SEE VIEW C c STYLE 6:<br>PIN 1. BASE<br>END VIEW 2. EMITTER<br>3. COLLECTOR<br>RECOMMENDED<br>SOLDERING FOOTPRINT*<br>3X<br>2.90 _ 0.90<br>Lo | cr<br>3X 0.80 | LL L 0.95<br>PITCH<br>DIMENSIONS: MILLIMETERS<br>**----- End of picture text -----**<br>


*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

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**BC856ALT1/D** 

**7**