BC858CDXV6T1G

## BC858CDXV6T1, BC858CDXV6T5 

## Dual General Purpose Transistor 

## **PNP Dual** 

This transistor is designed for general purpose amplifier applications. It is housed in the SOT−563 which is designed for low power surface mount applications. 

## **Features** 

- These are Pb−Free Devices 

## **MAXIMUM RATINGS** 

|**MAXIMUM RATINGS**||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Collector−Emitter Voltage|VCEO|−30|V|
|Collector−Base Voltage|VCBO|−30|V|
|Emitter−Base Voltage|VEBO|−5.0|V|
|Collector Current − Continuous|IC|−100|mAdc|



Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 

**THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Symbol Max Unit** Total Device Dissipation, (Note 1) PD TA = 25 ° C 357 mW Derate above 25 ° C 2.9 mW/ ° C Thermal Resistance R JA 350 ° C/W Junction-to-Ambient (Note 1) ~~ae~~ **Characteristic (Both Junctions Heated) Symbol Max Unit** Total Device Dissipation, (Note 1) PD TA = 25 ° C 500 mW Derate above 25 ° C 4.0 mW/ ° C Thermal Resistance R JA 250 ° C/W Junction-to-Ambient (Note 1) ~~rr~~ Junction and Storage TJ, Tstg −55 to +150 ° C Temperature Range 

1. FR−4 @ Minimum Pad 

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**SOT−563 CASE 463A PLASTIC** 

## **MARKING DIAGRAMS** 

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3L M<br>1<br>**----- End of picture text -----**<br>


3L = Device Code M = Date Code = Pb−Free Package (Note: Microdot may be in either location) 

## **ORDERING INFORMATION** 

|**Device**|**Package**|**Shipping**†|
|---|---|---|
|BC858CDXV6T1|SOT−563|4000/Tape & Reel|
|BC858CDXV6T1G|SOT−563<br>(Pb−Free)|4000/Tape & Reel|
|BC858CDXV6T5|SOT−563|8000/Tape & Reel|
|BC858CDXV6T5G|SOT−563<br>(Pb−Free)|8000/Tape & Reel|



†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

Publication Order Number: 

**1** 

© Semiconductor Components Industries, LLC, 2005 **October, 2005 − Rev. 3** 

**BC858CDXV6T1/D** 

## **BC858CDXV6T1, BC858CDXV6T5** 

## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted)||||||
|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**||||||
|Collector−Emitter Breakdown Voltage<br>(IC= −10 mA)|V(BR)CEO|−30|−|−|V|
|Collector−Emitter Breakdown Voltage<br>(IC= −10�A, VEB= 0)|V(BR)CES|−30|−|−|V|
|Collector−Base Breakdown Voltage<br>(IC= −10�A)|V(BR)CBO|−30|−|−|V|
|Emitter−Base Breakdown Voltage<br>(IE= −1.0�A)|V(BR)EBO|−5.0|−|−|V|
|Collector Cutoff Current (VCB= −30 V)<br>Collector Cutoff Current(VCB= −30 V, TA= 150°C)|ICBO|−<br>−|−<br>−|−15<br>−4.0|nA<br>�A|
|**ON CHARACTERISTICS**||||||
|DC Current Gain<br>(IC= −10�A, VCE= −5.0 V)<br>(IC= −2.0 mA, VCE= −5.0 V)|hFE|−<br>420|270<br>520|−<br>800|−|
|Collector−Emitter Saturation Voltage<br>(IC= −10 mA, IB= −0.5 mA)<br>(IC= −100 mA, IB= −5.0 mA)|VCE(sat)|−<br>−|−<br>−|−0.3<br>−0.65|V|
|Base−Emitter Saturation Voltage<br>(IC= −10 mA, IB= −0.5 mA)<br>(IC= −100 mA, IB= −5.0 mA)|VBE(sat)|−<br>−|−0.7<br>−0.9|−<br>−|V|
|Base−Emitter On Voltage<br>(IC= −2.0 mA, VCE= −5.0 V)<br>(IC= −10 mA, VCE= −5.0 V)|VBE(on)|−0.6<br>−|−<br>−|−0.75<br>−0.82|V|
|**SMALL−SIGNAL CHARACTERISTICS**||||||
|Current−Gain − Bandwidth Product<br>(IC= −10 mA, VCE= −5.0 Vdc, f = 100 MHz)|fT|100|−|−|MHz|
|Output Capacitance<br>(VCB= −10 V, f = 1.0 MHz)|Cob|−|−|4.5|pF|
|Noise Figure<br>(IC= −0.2 mA, VCE= −5.0 Vdc, RS= 2.0 k�,<br>f = 1.0 kHz, BW = 200 Hz)|NF|−|−|10|dB|



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**2** 

**BC858CDXV6T1, BC858CDXV6T5** 

## **TYPICAL CHARACTERISTICS** 

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2.0<br>1.5 VCE = −10 V<br>TA = 25°C<br>1.0<br>0.7<br>0.5<br>0.3<br>0.2<br>−0.2 −0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100 −200<br>IC, COLLECTOR CURRENT (mAdc)<br>hFE, NORMALIZED DC CURRENT GAIN<br>**----- End of picture text -----**<br>


**Figure 1. Normalized DC Current Gain** 

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−2.0<br>TA = 25°C<br>−1.6<br>−1.2<br>−0.8 IC = IC = −50 mA IC = −200 mA<br>−10 mA<br>IC = −100 mA<br>−0.4 IC = −20 mA<br>0<br>−0.02 −0.1 −1.0 −10 −20<br>IB, BASE CURRENT (mA)<br>Figure 3. Collector Saturation Region<br>10<br>Cib<br>7.0<br>TA = 25°C<br>5.0<br>3.0 Cob<br>2.0<br>1.0<br>−0.4 −0.6 −1.0 −2.0 −4.0 −6.0 −10 −20 −30 −40<br>VR, REVERSE VOLTAGE (VOLTS)<br>VCE, COLLECTOR−EMITTER VOLTAGE (V)<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


**Figure 5. Capacitances** 

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−1.0<br>−0.9 TA = 25°C<br>−0.8 VBE(sat) @ IC/IB = 10<br>−0.7<br>−0.6 VBE(on) @ VCE = −10 V<br>−0.5<br>−0.4<br>−0.3<br>−0.2<br>−0.1 VCE(sat) @ IC/IB = 10<br>0<br>−0.1 −0.2 −0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100<br>IC, COLLECTOR CURRENT (mAdc)<br>Figure 2. “Saturation” and “On” Voltages<br>1.0<br>−55°C to +125°C<br>1.2<br>1.6<br>2.0<br>2.4<br>2.8<br>−0.2 −1.0 −10 −100<br>IC, COLLECTOR CURRENT (mA)<br>Figure 4. Base−Emitter Temperature Coefficient<br>400<br>300<br>200<br>150 VCE = −10 V<br>TA = 25°C<br>100<br>80<br>60<br>40<br>30<br>20<br>−0.5 −1.0 −2.0 −3.0 −5.0 −10 −20 −30 −50<br>IC, COLLECTOR CURRENT (mAdc)<br>V, VOLTAGE (VOLTS)<br>C)VB, TEMPERATURE COEFFICIENT (mV/°<br>θ<br>f�, CURRENT−GAIN − BANDWIDTH PRODUCT (MHz)T<br>**----- End of picture text -----**<br>


**Figure 6. Current−Gain − Bandwidth Product** 

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**3** 

**BC858CDXV6T1, BC858CDXV6T5** 

## **PACKAGE DIMENSIONS** 

## **SOT−563, 6 LEAD** 

CASE 463A−01 ISSUE F 

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D<br>A<br>−X−<br>L<br>6 5 4<br>E<br>−Y− HE<br>1 2 3<br>LJ e Li<br>b 6 5 PL C<br>e 0.08 (0.003) M X Y<br>**----- End of picture text -----**<br>


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NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ANSI<br>Y14.5M, 1982.<br>2. CONTROLLING DIMENSION: MILLIMETERS<br>3. MAXIMUM LEAD THICKNESS INCLUDES LEAD<br>FINISH THICKNESS. MINIMUM LEAD THICKNESS<br>IS THE MINIMUM THICKNESS OF BASE MATERIAL.<br>MILLIMETERS INCHES<br>DIM MIN NOM MAX MIN NOM MAX<br>A 0.50 0.55 0.60 0.020 0.021 0.023<br>——<br>b 0.17 0.22 0.27 0.007 0.009 0.011<br>C 0.08 0.12 0.18 0.003 0.005 0.007<br>D 1.50 1.60 1.70 0.059 0.062 0.066<br>E 1.10 1.20 1.30 0.043 0.047 0.051<br>e 0.5 BSC 0.02 BSC<br>L 0.10 0.20 0.30 0.004 0.008 0.012<br>HE 1.50 1.60 1.70 0.059 0.062 0.066<br>STYLE 1:<br>PIN 1. EMITTER 1<br> 2. BASE 1<br> 3. COLLECTOR 2<br> 4. EMITTER 2<br> 5. BASE 2<br> 6. COLLECTOR 1<br>**----- End of picture text -----**<br>


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SOLDERING FOOTPRINT*<br>0.3<br>0.0118<br>i ary<br>0.45<br>0.0177<br>1.0<br>THees 1.35 0.0394<br>0.0531<br>“Oooh<br>0.5 0.5<br>0.0197 0.0197 SCALE 20:1 inchesmm<br>Sp<br>**----- End of picture text -----**<br>


*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

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**BC858CDXV6T1/D** 

**4**