BC858CDXV6T1G

Bipolar Transistor Array, Dual PNP

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Manufacturer: ONSEMI
Product type: Single Bipolar Junction Transistors - BJT
Transistor Polarity:Dual PNP; Collector Emitter Voltage V(br)ceo:-30V; Transition Frequency ft:100MHz; Power Dissipation Pd:500mW; DC Collector Current:-100mA; DC Current Gain hFE:420
MSL: MSL 1 - Unlimited
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 6Pins
Product Range: -
Qualification: AEC-Q101
Power Dissipation: 500mW
Transistor Mounting: Surface Mount
Transistor Polarity: Dual PNP
Transistor Case Style: SOT-563
DC Current Gain hFE Min: 420hFE
Operating Temperature Max: 150°C
Continuous Collector Current: 100mA
Collector Emitter Voltage Max: 30V

Datasheet

Updated at March 18, 2026