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BC858C-7-F
Bipolar (BJT) Single Transistor, PNP, 30 V, 100 mA, 300 mW, SOT-23, Surface Mount
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: DIODES INC.
- Product type:
- Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-30V; Transition Frequency ft:200MHz; Power Dissipation Pd:300mW; DC Collector Current:-100mA; DC Current Gain hFE:600hFE; Transistor Ca
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: -
- Qualification: -
- Power Dissipation: 300mW
- Transistor Mounting: Surface Mount
- Transistor Polarity: PNP
- Transition Frequency: 200MHz
- Transistor Case Style: SOT-23
- DC Current Gain hFE Min: 600hFE
- Operating Temperature Max: 150°C
- Continuous Collector Current: 100mA
- Collector Emitter Voltage Max: 30V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.028 € |
| Current stock | 1000+ |
| Lead time | 30 days |
**BC856A – BC858C**
**PNP SMALL SIGNAL TRANSISTOR IN SOT23**
## **Features**
## **Mechanical Data**
- Ideally Suited for Automatic Insertion
- Complementary NPN Types: BC846 – BC848
- For Switching and AF Amplifier Applications
- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)**
- **Halogen- and Antimony-Free. "Green" Device (Note 3)**
- **For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at**
- Case: SOT23
- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminals: Finish – Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 ed
- Weight: 0.008 grams (Approximate)
-
- **https://www.diodes.com/products/automotive/automotive products/.**
- **This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability.**
**https://www.diodes.com/quality/product-definitions/**
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SOT23<br>C<br>C<br>B<br>&<br>B<br>E<br>Top View Device Symbol Top View<br>Pin-Out<br>**----- End of picture text -----**<br>
## **Ordering Information** (Note 4)
|**Ordering Informationg Information Information**(Note 4)|**Ordering Informationg Information Information**(Note 4)|**Ordering Informationg Information Information**(Note 4)|**Ordering Informationg Information Information**(Note 4)|**Ordering Informationg Information Information**(Note 4)|
|---|---|---|---|---|
||||||
|**Product**<br>~~a~~|**Compliance**<br>|**Marking**<br>|**Reel Size**<br>**(Inches)**<br>~~**O**~~<br>|**Quantity per Reel**<br>~~(~~|
|BC856A-7-F<br>~~GC~~<br>~~a~~|Standard<br>~~GC~~<br>|K3A<br>~~GC~~<br>|7<br>~~GC~~<br>~~**O**~~<br>|3,000<br>~~GC~~<br>~~(~~|
|BC856B-7-F<br>~~a ~~<br>~~**G**e~~|Standard<br> ~~G~~<br>~~e~~|K3B<br>~~G~~<br>~~CG~~|7<br>~~**O** ~~<br>~~G~~<br>~~CG~~|3,000<br> ~~(~~<br>~~(~~|
|BC856B-13-F<br>~~**G**e~~|Standard<br>~~e~~|K3B<br>~~CG~~|13<br>~~CG~~|10,000<br>~~(~~|
|BC857A-7-F<br>~~**G**e~~|Standard<br>~~e~~|K3A<br>~~CG~~<br>~~O~~|7<br>~~CG~~<br>~~O~~|3,000<br>~~(~~<br>~~O~~|
|BC857B-7-F<br>~~GC~~<br>~~Ge~~|Standard<br>~~GC~~<br>~~Ge~~|K3B<br>~~GC~~|7<br>~~GC~~<br>~~OS~~|3,000<br>~~GC~~<br>~~(~~|
|BC857B-13-F<br>~~GC~~<br>~~Ge~~<br>~~Ge~~|Standard<br>~~GC~~<br>~~Ge~~<br>~~Ge~~|K3B<br>~~GC~~<br>~~**C**G~~|13<br>~~GC~~<br>~~OS~~<br>~~G~~|10,000<br>~~GC~~<br>~~(~~<br>~~**(**~~|
|BC857C-7-F<br>~~Ge~~<br>~~Ge~~|Standard<br>~~Ge~~<br>~~Ge~~|K3G<br>~~**C**G~~<br>~~O~~|7<br>~~OS~~<br>~~G~~<br>~~O~~|3,000<br>~~(~~<br>~~**(**~~|
|BC857C-13-F<br>~~Ge~~|Standard<br>~~Ge~~|K3G<br>~~**C**G~~<br>~~O~~|13<br>~~G ~~<br>~~O~~|10,000<br> ~~**(**~~|
|BC858A-7-F<br>~~GO~~<br>~~Ge~~|Standard<br>~~GO~~<br>~~Ge~~|K3A<br>~~O~~<br>~~GO~~<br>~~CG~~|7<br>~~O~~<br>~~GO~~<br>~~CG~~|3,000<br>~~GO~~<br>~~(~~|
|BC858B-7-F<br>~~Ge~~<br>~~es~~|Standard<br>~~Ge~~|K3B<br>~~CG~~|7<br>~~CG~~|3,000<br>~~(~~|
|BC858C-7-F<br>~~Ge~~<br>~~es~~|Standard<br>~~Ge~~|K3G<br>~~CG~~|7<br>~~CG~~|3,000<br>~~(~~|
- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
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**BC856A – BC858C**
## **Marking Information**
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||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|xxx = Product Type Marking Code|
|(Please see Ordering Information)|
|xxx|YM = Date Code Marking|
|Y or Y = Year (ex: G = 2019)|
|M or M = Month (ex: 9 = September)|
|Date Code Key|
|Year|2019|2020|2021|2022|2023|2024|2025|2026|
|Code|G|H|I|J|K|L|M|N|
|——|Month|Jan|Feb|a|Mar|Apr|May|Jun|Jul|Aug|Sep|Oct|Nov|Dec|
|Code|1|2|3|4|5|6|7|8|9|O|N|D|
|——|ee|ee|ee|ee|ee|ee|
**----- End of picture text -----**<br>
**Absolute Maximum Ratings** (@ TA = +25°C, unless otherwise specified.)
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||||||
|---|---|---|---|---|
|Characteristic|Symbol|Value|Unit|
|BC856|-80|
|Collector-Base Voltage|BC857|VCBO|-50|V|
|BC858|-30|
|BC856|-65|
|Collector-Emitter Voltage|BC857|VCEO|-45|V|
|BC858|-30|
|Emitter-Base Voltage|VEBO|-5.0|V|
|Continuous Collector Current|IC|-100|mA|
|Peak Collector Current (Single Pulse)|ICM|-200|mA|
|Peak Emitter Current|IEM|-200|mA|
|Peak Base Current (Single Pulse)|IBM|-200|mA|
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**Thermal Characteristics** (@ TA = +25°C, unless otherwise specified.)
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||||||
|---|---|---|---|---|
|Characteristic|Symbol|Value|Unit|
|(Note 5)|310|
|Power Dissipation|PD|mW|
|(Note 6)|350|
|(Note 5)|403|
|Thermal Resistance, Junction to Ambient|RθJA|°C/W|
|(Note 6)|357|
|Thermal Resistance, Junction to Leads|(Note 7)|RθJL|350|°C/W|
|Operating and Storage Temperature Range|TJ, TSTG|-55 to +150|°C|
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## **ESD Ratings** (Note 8)
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||||||
|---|---|---|---|---|
|Characteristic|Symbol|Value|Unit|JEDEC Class|
|Electrostatic Discharge - Human Body Model|ESD HBM|4,000|V|3A|
|Electrostatic Discharge - Machine Model|ESD MM|400|V|C|
**----- End of picture text -----**<br>
Notes: 5. For a device mounted on minimum recommended pad layout 1oz copper that is on a single-sided FR-4 PCB; device is measured under still air conditions whilst operating in a steady-state.
6. Same as Note 5, except the device is mounted on 15mm × 15mm 1oz copper.
7. Thermal resistance from junction to solder-point (at the end of the leads).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
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LJTUS,'nun ¢C OR PORATED DTODES
**BC856A – BC858C** |
## **Thermal Characteristics and Derating Information**
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0.4<br>PTT ITLL<br>0.3 PT \NEEE EEE<br>Baal \<br>0.2 FT TT] NEEL<br>PTT ET TING ELE<br>0.1<br>CCPC<br>PT TTT ET EE\INE<br>0.0 Ft | | | tt tty N \<br>0 25 50 75 100 125 150<br> Temperature (°C)Temperature (°C)<br> Max Power Dissipation (W)<br>**----- End of picture text -----**<br>
## **Derating Curve**
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400<br>350300 TTeeFEETa enon alnngame EU<br>250 IEAMa aae”TED agent<br>D=0.5<br>200 aL eat ACARIA |<br>150 come uaa iw w 2111) ee D=0.1 rT | vy<br>cn Agi A<br>100 D=0.2 Single Pulse<br>ei a<br>50 NNee eeSea> QlIl a i<br>D=0.05<br>0 oTLe e er | aI STtA| YETTINTMLE TEPT<br>100 µ 1m 10m 100m 1 10 100 1k<br>Pulse Width (s)<br>esistance (°C/W)esistance (°C/W)<br>mal R<br>TherTher<br>**----- End of picture text -----**<br>
## **Transient Thermal Impedance**
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10<br>Std Single Pulse. TTAamb = 2=2 5°C<br>OSE C CIE Cn<br>a<br>a<br>1 BE SU<br>a<br>oN<br>a |<br>PT ST<br>PTTe<br>0.1<br>10m 100m 1 10 100 1k<br>Pulse Width (s)<br>Pulse Power Dissipation<br> Max Power Dissipation (W)<br>**----- End of picture text -----**<br>
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**BC856A – BC858C**
## rein
**Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.)
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||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|
|pf|Characteristic|Symbol|Min|Typ|Max|Unit|Test Condition|
|BC856|-80|
|Collector-Base Breakdown Voltage|po|BC857|BVCBO|||-50|—|—|V|IC = -10µA|
|pe|||
|BC858|-30|
|||||
|BC856|-65|
|Collector-Emitter Breakdown Voltage (Note 9)|pdPp|BC857|BVCEO||||-45|—|—|V|IC = -10mA|
|BC858|-30|
|a|Emitter-Base Breakdown Voltage|po|BVEBO|||-5|—|—|V|IE|= -1µA|
|-15|nA|VCB = -30V|
|Collector Cutoff Current|ICBO|—|—|
|-4|µA|VCB = -30V, TJ = +150°C|
|BC856|-15|VCE = -80V|
|OO|es|esee|
|pO|pe|Pp|
|Collector Emitter Cutoff Current|BC857|ICES|—|—|-15|nA|VCE = -50V|
|||pe|pd|
|BC858|-15|VCE = -30V|
|a|Emitter-Base Cutoff Current|J|IEBO|—|—|pe|-100|nA|Pp|VEB = -5V|
|BC856A / BC857A / BC858A|200|
|Pp|GG CO|
|Small Signal Current Gain|BC856B / BC857B / BC858B|hfe|—|330|—|—|
|Ee|BC857C / BC858C|||600|
|PO|||
|BC856A / BC857A / BC858A|2.7|
|po|||
|Input Impedance|BC856B / BC857B / BC858B|hie|—|4.5|—|kΩ|
|pO|||
|BC857C / BC858C|8.7|IC = -2.0mA, VCE = -5V|
|PO|||
|BC856A / BC857A / BC858A|18|f = 1.0kHz|
|Output Admittance|po|||
|BC856B / BC857B / BC858B|hoe|—|30|—|µS|
|pO|||
|BC857C / BC858C|60|
|pO|||
|BC856A / BC857A / BC858A|1.5x10|[-4]|
|Reverse Voltage Transfer|pO|||
|Ratio|BC856B / BC857B / BC858B|hre|—|2x10|[-4]|—|—|
|PO|||
|BC857C / BC858C|3x10|[-4]|
|PO|||
|BC856A / BC857A / BC858A|rs|125|180|250|
|po|||
|DC Current Gain (Note 9)|BC856B / BC857B / BC858B|hFE|220|290|475|—|IC = -2.0mA, VCE = -5V|
|pO|ee|
|BC857C / BC858C|420|520|800|
|po|a|ee|
|-75|-300|IC = -10mA, IB = -0.5mA|
|Collector-Emitter Saturation Voltage (Note 9)|VCE(sat)|—|mV|
|ee|-250|-650|IC = -100mA, IB = -5.0mA|
|ee|Pp|
|-600|-650|-750|IC|= -2mA, VCE = -5V|
|Base-Emitter Turn-On Voltage (Note 9)|VBE(on)|mV|
|a|—|—|-820|IC|= -10mA, VCE = -5V|
|a|ee|Pp|
|-700|—|IC|= -10mA, IB = -0.5mA|
|Base-Emitter Saturation Voltage (Note 9)|VBE(sat)|—|mV|
|ee|-850|-1100|IC|= -100mA, IB = -5mA|
|ee|Pp|
|GO|Output Capacitance|Cobo|—|3|OO|—|pF|VCB = -10V, f = 1.0MHz|
|VCE = -5V, IC = -10mA,|
|Transition Frequency|fT|100|200|—|MHz|
|f = 100MHz|
|VCE = -5V, IC = -200µA|
|Noise Figure|NF|—|2|10|dB|RS = 2kΩ, f = 1kHz|
|∆f = 200Hz|
|Note:|ee|9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.|ee|
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**BC856A – BC858C**
## **Typical Electrical Characteristics (BC856B)** (@ TA = +25°C, unless otherwise specified.)
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1,000 0.5<br>T AA [ =] = 150° CC VCE = 5V IC<br>a ==|| Fg IB [= 10]<br>ACh : 0.4 |<br>100<br>m TTA = 25°CA = 25°C se!n 1 0.3 |LL<br>TTAA = -50° = -50° C<br>Se ee ee eNl I 0.2 MT TTA = 25A = 25 °° CC ITif<br>10 TT A = 150°C = 150°C<br>ScoEE oon| ll . 0.1 Bina sen manSe,an<br>TTAA = -50°C = -50°C<br>1 0<br>a 1 10 100 1,000 Foon 0.1 1 1 0 Th 1 00 | 1,000<br>I CC, , COLLECTOR CURRENT (mA) [COLLECTOR CURRENT (mA) ] IIC, C, COLLECTOR CURRENT (mA ))<br>Figure 1 Typical DC Current Gain vs. Collector Current hFE V IC Figure 2 Typical Collector-Emitter Saturation Voltage V vs. Collector Current CE(sat) V IC<br>1,000<br>VCE = 5V<br>po<br>|<br>eo<br>100<br>ee LIN<br>|<br>ee |<br>|<br>10 Co TT<br>1 10 100<br>II C , COLLECTOR CURRENT (mA), COLLECTOR CURRENT (mA)<br>Figure 3 Gain-Bandwidth Product vs Collector Current fT V IC<br>(V)<br>CE(sat)<br>, COLLECTOR-EMITTER<br>, DC CURRENT GAIN , COLLECTOR-EMITTER<br>FE<br>h (SAT)(sat)<br>SATURATION VOLTAGE (V)<br>CE<br>VV<br> V<br>f , GAIN-BANDWIDTH PRODUCT (MHz)t<br>**----- End of picture text -----**<br>
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**BC856A – BC858C**
## **Package Outline Dimensions**
Please see http://www.diodes.com/package-outlines.html for the latest version.
## **SOT23**
**==> picture [468 x 189] intentionally omitted <==**
**----- Start of picture text -----**<br>
All 7°<br>H<br>GAUGE PLANE SOT23<br>0.25<br>J Dim Min Max Typ<br>K1 K A 0.37 0.51 0.40<br>B 1.20 1.40 1.30<br>a C 2.30 2.50 2.40<br>A M D 0.89 1.03 0.915<br>L L1 F 0.45 0.60 0.535<br>Gal, J | a<br>G 1.78 2.05 1.83<br>p oy oe CE H 2.80 3.00 2.90<br>J 0.013 0.10 0.05<br>C B K 0.890 1.00 0.975<br>K1 0.903 1.10 1.025<br>L 0.45 0.61 0.55<br>L1 0.25 0.55 0.40<br>To ===5 M 0.085 0.150 0.110<br>D<br>a 0° 8° --<br>hh F G Ls === All Dimensions in mm<br>**----- End of picture text -----**<br>
## **Suggested Pad Layout**
Please see http://www.diodes.com/package-outlines.html for the latest version.
## **SOT23**
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**----- Start of picture text -----**<br>
Y<br>Y1 aie C<br>Aq!<br>bd X wo X1<br>**----- End of picture text -----**<br>
|**Dimensions**|**Value(in mm)**|
|---|---|
|**C**|2.0|
|**X**|0.8|
|**X1**|1.35|
|**Y**|0.9|
|**Y1**|2.9|
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## **IMPORTANT NOTICE**
1. DIODES INCORPORATED AND ITS SUBSIDIARIES (“DIODES”) MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes products. Diodes products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for (a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of the Diodes products for their intended applications, (c) ensuring their applications, which incorporate Diodes products, comply the applicable legal and regulatory requirements as well as safety and functional-safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality control techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with their applications.
3. Diodes assumes no liability for any application-related information, support, assistance or feedback that may be provided by Diodes from time to time. Any customer or user of this document or products described herein will assume all risks and liabilities associated with such use, and will hold Diodes and all companies whose products are represented herein or on Diodes’ websites, harmless against all damages and liabilities.
4. Products described herein may be covered by one or more United States, international or foreign patents and pending patent applications. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks and trademark applications. Diodes does not convey any license under any of its intellectual property rights or the rights of any third parties (including third parties whose products and services may be described in this document or on Diodes’ website) under this document.
5. Diodes products are provided subject to Diodes’ Standard Terms and Conditions of Sale (https://www.diodes.com/about/company/terms-and-conditions/terms-and-conditions-of-sales/) or other applicable terms. This document does not alter or expand the applicable warranties provided by Diodes. Diodes does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
6. Diodes products and technology may not be used for or incorporated into any products or systems whose manufacture, use or sale is prohibited under any applicable laws and regulations. Should customers or users use Diodes products in contravention of any applicable laws or regulations, or for any unintended or unauthorized application, customers and users will (a) be solely responsible for any damages, losses or penalties arising in connection therewith or as a result thereof, and (b) indemnify and hold Diodes and its representatives and agents harmless against any and all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim relating to any noncompliance with the applicable laws and regulations, as well as any unintended or unauthorized application.
7. While efforts have been made to ensure the information contained in this document is accurate, complete and current, it may contain technical inaccuracies, omissions and typographical errors. Diodes does not warrant that information contained in this document is error-free and Diodes is under no obligation to update or otherwise correct this information. Notwithstanding the foregoing, Diodes reserves the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes.
8. Any unauthorized copying, modification, distribution, transmission, display or other use of this document (or any portion hereof) is prohibited. Diodes assumes no responsibility for any losses incurred by the customers or users or any third parties arising from any such unauthorized use.
Copyright © 2020 Diodes Incorporated
**www.diodes.com**
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Updated at June 6, 2026
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