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BC858BWT106
Bipolar (BJT) Single Transistor, PNP, 30 V, 100 mA, 200 mW, SOT-323, Surface Mount
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- Manufacturer: ROHM
- Product type:
- SVHC: To Be Advised
- No. of Pins: 3Pins
- Product Range: -
- Qualification: -
- Power Dissipation: 200mW
- Transistor Mounting: Surface Mount
- Transistor Polarity: PNP
- Transition Frequency: 250MHz
- Transistor Case Style: SOT-323
- DC Current Gain hFE Min: 210hFE
- Operating Temperature Max: 150°C
- Continuous Collector Current: 100mA
- Collector Emitter Voltage Max: 30V
| Delivery and price | |
|---|---|
| Units per pack | 3000 |
| Price | 0.034 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
BC858BW / BC858B Transistors ## PNP General Purpose Transistor ## **BC858BW / BC858B** ## � **Features** 1) BVCEO < -30V (IC=-1mA) ## 2) Complements the BC848B / BC848BW. ## � **Package, marking and packaging specifications** |Paet No.<br>Pakaging type|BC858BW<br>UMT3|BC858B<br>SST3| |---|---|---| |Marking|G3K|G3K| |Code|T106|T116| |Basic ordering unit (pieces)|3000|3000| ## � **Absolute maximum ratings** (Ta=25°C) |Parameter|Symbol|Limits|Unit| |---|---|---|---| |Collector-base voltage|VCBO|−30|V| |Collector-emitter voltage|VCEO|−30|V| |<br>Emitter-base voltage|VEBO|−5|V| |Collector current|IC|−0.1|A| |Collector power dissipation|PC|0.2|∗<br>W| |||0.35|| |Junction temperature|Tj|150|˚C| |Storage temperature|Tstg|−65 to +150|˚C| ## � **External dimensions** (Unit : mm) **==> picture [203 x 192] intentionally omitted <==** **----- Start of picture text -----**<br> BC858BW<br>SOT-323<br>2.0±0.2<br>1.3±0.1 0.9±0.1<br>0.65 0.65 0.2 0.7±0.1<br>(1) (2)<br>00.1<br>(3) (1) Emitter<br>ROHM : UMT3 0.3+0.1-0 0.15±0.05 (2) Base<br>EIAJ : EC-70 All terminals have same dimensions (3) Collector<br>BC858B<br>SOT-23<br>2.9±0.21.9±0.2 0.95+0.2 − 0.1<br>0.95 0.95 0.45±0.1<br>(1) (2) 0~0.1<br>0.2Min.<br>(3)<br>0.4+0.1 − 0.05 0.15 − +0.10.06 (1) Emitter(2) Base<br>ROHM : SST3 All terminals have same dimensions (3) Collector<br>1.20.1± 2.10.1±<br>0.1~0.4<br> +0.2 - 0.1 0.2±<br>1.3 2.4<br>**----- End of picture text -----**<br> ∗ When mounted on 7 × 5 × 0.6 mm ceramic board. ## � **Electrical characteristics** (Ta=25°C) |Parameter|Symbol|Min.|Typ.|Max.|Unit|Conditions| |---|---|---|---|---|---|---| |Collector-base breakdown voltage|BVCBO|−30|−|−|V|IC= −50µA| |Collector-emitter breakdown voltage|BVCEO|−30|−|−|V|IC= −1mA| |Emitter-base breakdown voltage|BVEBO|−5|−|−|V|IE= −50µA| |Collector cutoff current<br>Collector-emitter saturation voltage|ICBO|−|−|−100|nA|VCB= −30V| |||−|−|4|µA|VCB= −30V, Ta=150°C| ||VCE(sat)|−|−|−0.3|V|IC/IB= −10mA/−0.5mA| |||−|−|−0.65|V|IC/IB= −100mA/−5mA| |Base-emitter saturation voltage|VBE(on)|−0.6|−|−0.75|V|VCE/IC= −5V/−10mA| |DC current transfer ratio|hFE|210|**−**|480|−|VCE/IC= −5V/−2mA| |Transition frequency|fT|−|250|−|MHz|VCE= −5V , IE=20mA , f=100MHz| |Output capacitance|Cob|−|4.5|−|pF|VCB= −10V , IE=0 , f=1MHz| ## � **Electrical characteristics curves** **==> picture [275 x 147] intentionally omitted <==** **----- Start of picture text -----**<br> 0.7<br>100 10.0<br>Ta=25˚C 0.6 0.5 50 Ta=25˚C<br>80 8.0 45<br>40<br>0.4<br>35<br>60 6.0<br>0.3 30<br>25<br>40 4.0<br>20<br>0.2<br>15<br>20 2.0 10<br>0.1 5<br>0 IB=0mA 0 1B=0 µ A<br>0 1.0 2.0 0 1.0 2.0<br>COLLECTOR-EMITTER VOLTAGE : VCE(V) COLLECTOR-EMITTER VOLTAGE : VCE(V)<br>Fig.1 Grounded emitter output Fig.2 Grounded emitter output<br>characteristics ( I ) characteristics ( II )<br>COLLECTOR CURRENT : I(mA)C COLLECTOR CURRENT : I(mA)C<br>**----- End of picture text -----**<br> Rev.A 1/4 BC858BW / BC858B ## Transistors **==> picture [251 x 323] intentionally omitted <==** **----- Start of picture text -----**<br> 500<br>Ta=25˚C<br>VCE=10V<br>5V<br>100<br>1V<br>10<br>5<br>0.1 1.0 10 100 1000<br>COLLECTOR CURRENT : IC(mA)<br>Fig.3 DC current gain vs. collector current ( I )<br>500<br>VCE=5V<br>Ta=125˚C<br>Ta=25˚C<br>100 Ta=-55˚C<br>10<br>5<br>0.1 1.0 10 100 1000<br>COLLECTOR CURRENT : IC(mA)<br>Fig.4 DC current gain vs. collector current ( II )<br>FE<br>DC CURRENT GAIN : h<br>FE<br>DC CURRENT GAIN : h<br>**----- End of picture text -----**<br> **==> picture [248 x 140] intentionally omitted <==** **----- Start of picture text -----**<br> 500<br>Ta=25˚C<br>VCE=5V<br>f=1kHz<br>100<br>10<br>5<br>0.01 0.1 1.0 10 100<br>COLLECTOR CURRENT : IC(mA)<br>Fig.5 AC current gain vs. collector current<br>FE<br>AC CURRENT GAIN : h<br>**----- End of picture text -----**<br> Rev.A 2/4 BC858BW / BC858B ## Transistors **==> picture [289 x 150] intentionally omitted <==** **----- Start of picture text -----**<br> 1.8<br>Ta=25˚C Ta=25˚C<br>IC / IB=10 1.6 IC / IB=10<br>0.3<br>1.4<br>1.2<br>0.2 1.0<br>0.8<br>0.6<br>0.1<br>0.4<br>0.2<br>0 0<br>0.1 1.0 10 100 0.1 1.0 10 100<br>COLLECTOR CURRENT : IC(mA) COLLECTOR CURRENT : IC(mA)<br>Fig.6 Collector-emitter saturation voltage Fig.7 Base-emitter saturation voltage<br> vs. collector current vs. collector current<br>(V) (V)<br>CE(sat) BE(sat)<br>COLLECTOR EMITTER SATURATION VOLTAGE : V BASE EMITTER SATURATION VOLTAGE : V<br>**----- End of picture text -----**<br> **==> picture [281 x 140] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 1000<br>Ta=25˚C Ta=25˚C<br>IC / IB=10 VCC=40V<br>IC / IB=10<br>15V 40V<br>100 100<br>VCC=3V<br>10 10<br>1.0 10 100 1.0 10 100<br>COLLECTOR CURRENT : IC(mA) COLLECTOR CURRENT : IC(mA)<br>Fig.9 Turn-on time vs. collector current Fig.10 Rise time vs. collector current<br>(ns)<br>on RISE TIME : t(ns)r<br>TURN ON TIME : t<br>**----- End of picture text -----**<br> **==> picture [284 x 150] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 100<br>Ta=25˚C Ta=25˚C<br>VCC=40V f=1MHz<br>IC=10IB1=10IB2<br>Cib<br>100 10<br>10 1<br>1.0 10 100 0.5 1 10 50<br>COLLECTOR CURRENT : IC(mA) REVERSE BIAS VOLTAGE(V)<br>Fig.12 Fall time vs. collector current Fig.13 Input/output capacitance<br>vs. voltage<br>Cob<br>(ns) pF)<br>FALL TIME : tf CAPACITANCE (<br>**----- End of picture text -----**<br> **==> picture [130 x 148] intentionally omitted <==** **----- Start of picture text -----**<br> 1.8<br>Ta=25˚C<br>1.6 VCE=10V<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>0.2<br>0<br>0.1 1.0 10 100<br>COLLECTOR CURRENT : IC(mA)<br>Fig.8 Grounded emitter propagation<br>characteristics<br>(V)<br>BE(ON)<br>BASE EMITTER VOLTAGE : V<br>**----- End of picture text -----**<br> **==> picture [134 x 140] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>Ta=25˚C<br>IC=10IB1=10IB2<br>40V<br>15V<br>VCE=3V<br>100<br>10<br>1.0 10 100<br>COLLECTOR CURRENT : IC(mA)<br>Fig.11 Storage time vs. collector current<br>STORAGE TIME : t(ns)S<br>**----- End of picture text -----**<br> **==> picture [131 x 139] intentionally omitted <==** **----- Start of picture text -----**<br> 50<br>Ta=25˚C<br>300MHz<br>100MHz<br>200MHz 300MHz<br>10<br>200MHz 100MHz<br>1.0<br>0.5<br>0.5 1 10 100 500<br>COLLECTOR CURRENT : IC(mA)<br>Fig.14 Gain bandwidth product<br>(V)<br>CE<br>COLLECTOR-EMITTER VOLTAGE : V<br>**----- End of picture text -----**<br> Rev.A 3/4 BC858BW / BC858B Transistors **==> picture [433 x 336] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 Ta=25˚C 100 Ta=25 ° C 10n VCB=30V<br>VCE=5V VCE=6V<br>f=270Hz<br>1n<br>10<br>hie hoe<br>100p<br>100 hre<br>hfe hre 10p<br>1<br>IC=1mA<br>hie=8.75k Ω<br>hoe hfe=270 1p<br>hre=6.25 × 10 [-][5]<br>10 0.1 hoe=17.7 µ S 0.1p<br>0.5 1 10 100 500 0.1 1 10 100 0 25 50 75 100 125 150<br>COLLECTOR CURRENT : IC(mA) COLLECTOR CURRENT : IC(mA) AMBIENT TEMPERATURE : Ta( ° C)<br>Fig.15 Gain bandwidth product Fig.16 h parameter vs. Fig.17 Noise characteristics ( I )<br>vs. collector current collector current<br>10 Ta=25˚C 100k Ta=25˚C<br>9 VCE=5VCE=5V=5V VCE=5VCE=5V=5V<br>f=10Hz<br>8 IC=100C=100=100 µ A<br>RS=10kS=10k=10k Ω<br>7<br>10k<br>6<br>5<br>4<br>1k<br>3<br>2<br>1<br>0 100<br>10 100 1k 10k 100kk 0.01 0.1 1 100<br>FREQUENCY : f(Hz) COLLECTOR CURRENT : IC(mA)C(mA)(mA)<br>Fig.18 Noise vs. collector currentt Fig.19 Noise characteristics ( II )Noise characteristics ( II ) )<br>12dB<br>8dB<br>5dB<br>3dB<br>NF=1dB<br>(MHz)T h-PARAMETERS NORMALIZED TO 1mA (A)CBO<br>CURRENT GAIN-BANDWIDTH PRODUCT : f COLLECTOR CUTOFF CURRENT : I<br> (dB) )( Ω S<br>NOISE FIGURE : NF<br>SOURCE RESISTANCE : R<br>**----- End of picture text -----**<br> **==> picture [433 x 325] intentionally omitted <==** **----- Start of picture text -----**<br> 10 Ta=25˚C 100k Ta=25˚C<br>9 VCE=5VCE=5V=5V VCE=5VCE=5V=5V<br>f=10Hz<br>8 IC=100C=100=100 µ A<br>RS=10kS=10k=10k Ω<br>7<br>10k<br>6<br>5<br>4<br>1k<br>3<br>2<br>1<br>0 100<br>10 100 1k 10k 100kk 0.01 0.1 1 100<br>FREQUENCY : f(Hz) COLLECTOR CURRENT : IC(mA)C(mA)(mA)<br>Fig.18 Noise vs. collector currentt Fig.19 Noise characteristics ( II )Noise characteristics ( II ) )<br>100k 100k 100k<br>Ta=25˚C<br>VCE=5V<br>f=30Hz Ta=25˚C Ta=25˚C<br>VCE=5V VCE=5V<br>f=1kHz f=10kHz<br>10k 10k 10k<br>1k 1k 1k<br>100 100 100<br>0.01 0.1 1 10 0.01 0.1 1 10 0.01 0.1 1 10<br>COLLECTOR CURRENT : IC(mA) COLLECTOR CURRENT : IC(mA) COLLECTOR CURRENT : IC(mA)<br>Fig.20 Noise characteristics ( III ) Fig.21 Noise characteristics ( IV ) Fig. 22 Noise characteristics ( V )<br>NF=1dB<br>NF=1dB<br>8dBNF=12dB<br>3dB 5dB 8dB 12dB 1dB<br>12dB<br>8dB<br>5dB<br>3dB<br>12dB<br>8dB<br>5dB<br>3dB<br>3dB<br>5dB<br>NF=1dB<br> (dB) ()( Ω S<br>NOISE FIGURE : NF<br>SOURCE RESISTANCE : R<br>SOURCE RESISTANCE : R)( Ω S SOURCE RESISTANCE : R)( Ω S SOURCE RESISTANCE : R)( Ω S<br>**----- End of picture text -----**<br> Rev.A 4/4 Appendix ## Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. ## About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1
Updated at April 25, 2026
Founded with a steadfast commitment to a "Quality First" corporate policy, ROHM is a globally recognized leader in the design and manufacture of semiconductors and electronic components. Originally named for its foundational product, resistors, combined with the unit of resistance, the "R" in ROHM has evolved to represent the brand's enduring dedication to reliability. Today, the company is renowned for driving technological advancement and supplying high-performance, dependable solutions to engineers worldwide. The company's engineering excellence is most prominently showcased in its expansive portfolio of discrete semiconductors. ROHM provides an industry-leading selection of bipolar transistors, alongside a massive array of Zener single diodes, Schottky diodes, and small signal diodes. Engineered for rigorous efficiency and compact footprint requirements, these foundational components are critical for modern power management, precise signal processing, and high-speed switching applications. In addition to its core discrete offerings, ROHM delivers advanced power control and circuit protection solutions. This includes a highly trusted lineup of single and dual MOSFETs, single IGBTs, and transient voltage suppressors (TVS diodes) designed to safeguard sensitive circuitry. Complemented by intelligent power modules, precision sensors, and specialized ICs, ROHM equips designers with the premium components necessary to build the next generation of robust electronic infrastructure.
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