BC858AWT1G

## General Purpose Transistors 

## **PNP Silicon** 

## BC856B, BC857B, BC858A 

These transistors are designed for general purpose amplifier applications. They are housed in the SC−70/SOT−323 which is designed for low power surface mount applications. 

## **Features** 

- S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 

## **MAXIMUM RATINGS** (TA = 25 ° C unless otherwise noted) 

|**MAXIMUM RATINGS**(TA = 25A = 25= 25°C unless otherwise noted)|C unless otherwise noted)|C unless otherwise noted)||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Collector-Emitter Voltage<br>BC856<br>BC857<br>BC858|VCEO|−65<br>−45<br>−30|V|
|Collector-Base Voltage<br>BC856<br>BC857<br>BC858|VCBO|−80<br>−50<br>−30|V|
|Emitter−Base Voltage|VEBO|−5.0|V|
|Collector Current − Continuous|IC|−100|mAdc|
|Collector Current − Peak (1 ms pulse)|ICM|−130|mA|



## **THERMAL CHARACTERISTICS** 

|**THERMAL CHARACTERISTICS**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Max**|**Unit**|
|Total Device Dissipation FR−5 Board,<br>(Note 1) TA= 25°C|PD|150|mW|
|Thermal Resistance, Junction−to−Ambi-<br>ent<br>~~FFE~~|R JA<br>~~FFE~~|883<br>~~FFE~~|°C/W<br>~~FFE~~|
|Junction and Storage Temperature<br>~~FFE~~|TJ, Tstg<br>~~FFE~~|−55 to +150<br>~~FFE~~|°C<br>~~FFE~~|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−5 = 1.0 x 0.75 x 0.062 in. 

## **www.onsemi.com** 

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COLLECTOR<br>3<br>1<br>BASE<br>® )<br>2<br>EMITTER<br>3<br>SC−70/SOT−323<br>CASE 419<br>1 ® STYLE 3<br>2<br>MARKING DIAGRAM<br>XX M<br>1 =<br>XX = Specific Device Code<br>M = Date Code*<br>= Pb−Free Package<br>(Note: Microdot may be in either location)<br>*Date Code orientation may vary depending up-<br>on manufacturing location.<br>**----- End of picture text -----**<br>


## **ORDERING INFORMATION** 

See detailed ordering and shipping information on page 5 of this data sheet. 

Publication Order Number: **BC856BWT1/D** 

**1** 

© Semiconductor Components Industries, LLC, 2015 **May, 2021 − Rev. 5** 

**BC856B, BC857B, BC858A** 

## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted)||||||
|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**||||||
|Collector−Emitter Breakdown Voltage<br>BC856<br>(IC= −10 mA)<br>BC857<br>BC858|V(BR)CEO|−65<br>−45<br>−30|−<br>−<br>−|−<br>−<br>−|V|
|Collector−Emitter Breakdown Voltage<br>BC856<br>(IC= −10�A, VEB= 0)<br>BC857<br>BC858|V(BR)CES|−80<br>−50<br>−30|−<br>−<br>−|−<br>−<br>−|V|
|Collector−Base Breakdown Voltage<br>BC856<br>(IC= −10�A)<br>BC857<br>BC858|V(BR)CBO|−80<br>−50<br>−30|−<br>−<br>−|−<br>−<br>−|V|
|Emitter−Base Breakdown Voltage<br>BC856<br>(IE= −1.0�A)<br>BC857<br>BC858|V(BR)EBO|−5.0<br>−5.0<br>−5.0|−<br>−<br>−|−<br>−<br>−|V|
|Collector Cutoff Current (VCB= −30 V)<br>Collector Cutoff Current(VCB= −30 V, TA= 150°C)|ICBO|−<br>−|−<br>−|−15<br>−4.0|nA<br>�A|
|**ON CHARACTERISTICS**||||||
|DC Current Gain<br>BC856A, BC585A<br>(IC= −10�A, VCE= −5.0 V)<br>BC856B, BC857B, BC858B<br>BC857C<br>(IC= −2.0 mA, VCE= −5.0 V)<br>BC856A, BC858A<br>BC856B, BC857B, BC858B<br>BC857C|hFE|−<br>−<br>−<br>125<br>220<br>420|90<br>150<br>270<br>180<br>290<br>520|−<br>−<br>−<br>250<br>475<br>800|−|
|Collector−Emitter Saturation Voltage<br>(IC= −10 mA, IB= −0.5 mA)<br>(IC= −100 mA, IB= −5.0 mA)|VCE(sat)|−<br>−|−<br>−|−0.3<br>−0.65|V|
|Base−Emitter Saturation Voltage<br>(IC= −10 mA, IB= −0.5 mA)<br>(IC= −100 mA, IB= −5.0 mA)|VBE(sat)|−<br>−|−0.7<br>−0.9|−<br>−|V|
|Base−Emitter On Voltage<br>(IC= −2.0 mA, VCE= −5.0 V)<br>(IC= −10 mA, VCE= −5.0 V)|VBE(on)|−0.6<br>−|−<br>−|−0.75<br>−0.82|V|
|**SMALL−SIGNAL CHARACTERISTICS**||||||
|Current−Gain − Bandwidth Product<br>(IC= −10 mA, VCE= −5.0 Vdc, f = 100 MHz)|fT|100|−|−|MHz|
|Output Capacitance<br>(VCB= −10 V, f = 1.0 MHz)|Cob|−|−|4.5|pF|
|Noise Figure<br>(IC= −0.2 mA, VCE= −5.0 Vdc, RS= 2.0 k�,<br>f = 1.0 kHz, BW = 200 Hz)|NF|−|−|10|dB|



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**2** 

**BC856B, BC857B, BC858A** 

## **BC857/BC858** 

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2.0 -1.0<br>1.5 VCE = -10 V -0.9 TA = 25°C<br>TA = 25°C -0.8 VBE(sat) @ IC/IB = 10<br>1.0 -0.7<br>-0.6 VBE(on) @ VCE = -10 V<br>0.7<br>-0.5<br>0.5 -0.4<br>-0.3<br>-0.2<br>0.3<br>-0.1 VCE(sat) @ IC/IB = 10<br>0.2 0<br>-0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100<br>IC, COLLECTOR CURRENT (mAdc) IC, COLLECTOR CURRENT (mAdc)<br>Figure 1. Normalized DC Current Gain Figure 2. “Saturation” and “On” Voltages<br>-2.0 1.0<br>TA = 25°C -55°C to +125°C<br>1.2<br>-1.6<br>1.6<br>-1.2<br>2.0<br>-0.8 IC = IC = -50 mA IC = -200 mA<br>-10 mA<br>2.4<br>IC = -100 mA<br>-0.4 IC = -20 mA<br>2.8<br>0<br>-0.02 -0.1 -1.0 -10 -20 -0.2 -1.0 -10 -100<br>IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Figure 3. Collector Saturation Region Figure 4. Base−Emitter Temperature Coefficient<br>10 400<br>Cib 300<br>7.0<br>TA = 25°C 200<br>5.0<br>150 VCE = -10 V<br>TA = 25°C<br>3.0 Cob 100<br>80<br>60<br>2.0<br>40<br>30<br>1.0 20<br>-0.4 -0.6 -1.0 -2.0 -4.0 -6.0 -10 -20 -30 -40 -0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 -50<br>VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc)<br>V, VOLTAGE (VOLTS)<br>hFE, NORMALIZED DC CURRENT GAIN<br>C)°<br>VCE, COLLECTOR-EMITTER VOLTAGE (V) VB, TEMPERATURE COEFFICIENT (mV/<br>θ<br>C, CAPACITANCE (pF)<br>f�, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)T<br>**----- End of picture text -----**<br>


**Figure 5. Capacitances** 

**Figure 6. Current−Gain − Bandwidth Product** 

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**3** 

**BC856B, BC857B, BC858A** 

**BC856** 

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-1.0<br>TJ = 25°C<br>V CE  = -5.0 V<br>T A  = 25°C -0.8<br>VBE(sat) @ IC/IB = 10<br>2.0<br>-0.6<br>VBE @ VCE = -5.0 V<br>1.0<br>-0.4<br>0.5<br>-0.2<br>0.2<br>VCE(sat) @ IC/IB = 10<br>0<br>-0.1 -0.2 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Figure 7. DC Current Gain Figure 8. “On” Voltage<br>-2.0 -1.0<br>-1.6 -1.4<br>IC = -20 mA -50 mA -100 mA -200 mA<br>-10 mA<br>-1.2 -1.8<br>�VB for VBE<br>-55°C to 125°C<br>-0.8 -2.2<br>-0.4 -2.6<br>TJ = 25°C<br>0 -3.0<br>-0.02 -0.05 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200<br>IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Figure 9. Collector Saturation Region Figure 10. Base−Emitter Temperature Coefficient<br>40<br>VCE = -5.0 V<br>TJ = 25°C 500<br>20<br>Cib<br>200<br>10 100<br>8.0<br>6.0 50<br>Cob<br>4.0<br>20<br>2.0<br>-0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -1.0 -10 -100<br>VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)<br>V, VOLTAGE (VOLTS)<br>hFE, DC CURRENT GAIN (NORMALIZED)<br>C)°<br>VB, TEMPERATURE COEFFICIENT (mV/<br>VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) θ<br>C, CAPACITANCE (pF)<br>f�, CURRENT-GAIN - BANDWIDTH PRODUCTT<br>**----- End of picture text -----**<br>


**Figure 11. Capacitance** 

**Figure 12. Current−Gain − Bandwidth Product** 

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**4** 

**BC856B, BC857B, BC858A** 

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1.0<br>0.7<br>D = 0.5<br>0.5<br>0.2<br>0.3<br>0.2<br>0.1 0.05 SINGLE PULSE Z � JC (t) = r(t) R � JC<br>0.070.1 SINGLE PULSE P (pk) RZ � � JA JC(t)  = 83.3= r(t) R ° C/W MAX � JA<br>0.05 t1 R � JA  = 200 ° C/W MAX<br>D CURVES APPLY FOR POWER<br>0.03 t2 PULSE TRAIN SHOWN<br>0.02 DUTY CYCLE, D = t1/t2 READ TIME AT t 1<br>TJ(pk) − TC = P(pk) R � JC(t)<br>0.01<br>0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0�k 2.0�k 5.0�k 10�k<br>t, TIME (ms)<br>Figure 13. Thermal Response<br>-200 The safe operating area curves indicate IC−VCE lim-<br>1 s 3 ms its of the transistor that must be observed for reliable oper-<br>-100 ation. Collector load lines for specific circuits must fall<br>-50 TA = 25°C TJ = 25°C below the limits indicated by the applicable curve.The data of Figure 14 is based upon TJ(pk) = 150°C; TC<br>or TA is variable depending upon conditions. Pulse curves<br>BC858 are valid for duty cycles to 10% provided TJ(pk) ≤ 150°C.<br>-10 BC857 TJ(pk) may be calculated from the data in Figure 13. At<br>BC856 high case or ambient temperatures, thermal limitations<br>-5.0 BONDING WIRE LIMIT will reduce the power that can be handled to values less<br>THERMAL LIMIT than the limitations imposed by the secondary breakdown.<br>SECOND BREAKDOWN LIMIT<br>-2.0<br>-1.0 -5.0 -10 -30 -45 -65 -100<br>VCE, COLLECTOR-EMITTER VOLTAGE (V)<br>r(t), TRANSIENT THERMAL<br>RESISTANCE (NORMALIZED)<br>IC, COLLECTOR CURRENT (mA)<br>**----- End of picture text -----**<br>


**Figure 14. Active Region Safe Operating Area** 

## **ORDERING INFORMATION** 

|**ORDERING INFORMATION**||||
|---|---|---|---|
|**Device**|**Marking**|**Package**|**Shipping**†|
|BC856BWT1G|3B|SC−70/SOT−323<br>(Pb−Free)|3,000 / Tape & Reel|
|SBC856BWT1G*||||
|BC857BWT1G|3F|SC−70/SOT−323<br>(Pb−Free)|3,000 / Tape & Reel|
|SBC857BWT1G*||||
|BC857CWT1G|3G|SC−70/SOT−323<br>(Pb−Free)|3,000 / Tape & Reel|
|NSVBC857CWT1G*||||
|BC858AWT1G|3J|SC−70/SOT−323<br>(Pb−Free)|3,000 / Tape & Reel|
|BC858BWT1G|3K|SC−70/SOT−323<br>(Pb−Free)|3,000 / Tape & Reel|



†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

*S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. 

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**5** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

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**SC−70 (SOT−323)** CASE 419 ISSUE P 

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DATE 07 OCT 2021<br>**----- End of picture text -----**<br>


**SCALE 4:1** 

## **GENERIC MARKING DIAGRAM** 

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XX M �<br>�<br>1<br>XX = Specific Device Code<br>M = Date Code<br>� = Pb−Free Package<br>**----- End of picture text -----**<br>


*This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ � ”, may or may not be present. Some products may not follow the Generic Marking. 

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STYLE 1: STYLE 2: STYLE 3:<br>CANCELLED PIN 1. ANODE PIN 1. BASE<br>2. N.C. 2. EMITTER<br>3. CATHODE 3. COLLECTOR<br>STYLE 6: STYLE 7: STYLE 8:<br>PIN 1. EMITTER PIN 1. BASE PIN 1. GATE<br> 2. BASE  2. EMITTER  2. SOURCE<br> 3. COLLECTOR  3. COLLECTOR  3. DRAIN<br>**----- End of picture text -----**<br>


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STYLE 4: STYLE 5:<br>PIN 1. CATHODE PIN 1. ANODE<br>2. CATHODE  2. ANODE<br>3. ANODE  3. CATHODE<br>STYLE 9: STYLE 10: STYLE 11:<br>PIN 1. ANODE PIN 1. CATHODE PIN 1. CATHODE<br> 2. CATHODE  2. ANODE 2. CATHODE<br> 3. CATHODE-ANODE  3. ANODE-CATHODE 3. CATHODE<br>**----- End of picture text -----**<br>


## **DOCUMENT NUMBER: 98ASB42819B** 

**DESCRIPTION: SC−70 (SOT−323)** 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. 

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