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BC857CDW1T1G
Bipolar Transistor Array, PNP, 45 V, 100 mA
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: ONSEMI
- Product type: Bipolar Junction Transistor Arrays - BJT
- Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-45V; Transition Frequency ft:100MHz; Power Dissipation Pd:380mW; DC Collector Current:-100mA; DC Current Gain hFE:270hFE; Trans
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 6Pins
- Product Range: -
- Qualification: AEC-Q101
- Power Dissipation: 380mW
- Transistor Mounting: Surface Mount
- Transistor Polarity: PNP
- Power Dissipation NPN: -
- Power Dissipation PNP: 250mW
- Transistor Case Style: SOT-363
- DC Current Gain hFE Min: 270hFE
- Transition Frequency NPN: -
- Transition Frequency PNP: 100MHz
- Operating Temperature Max: 150°C
- DC Current Gain hFE Min NPN: -
- DC Current Gain hFE Min PNP: 420hFE
- Continuous Collector Current: 100mA
- Collector Emitter Voltage Max: 45V
- Continuous Collector Current NPN: -
- Continuous Collector Current PNP: 100mA
- Collector Emitter Voltage Max NPN: -
- Collector Emitter Voltage Max PNP: 45V
| Delivery and price | |
|---|---|
| Units per pack | 1500 |
| Price | 0.038 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
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Updated at April 13, 2026