BC857BDW1T1G

## BC856BDW1T1G, SBC856BDW1T1G BC857BDW1T1G, 

## BC858CDW1T1G Series 

## Dual General Purpose Transistors **PNP Duals** 

These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications. 

## **Features** 

- S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* 

## **MAXIMUM RATINGS** 

|**MAXIMUM RATINGS**||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Collector−Emitter Voltage<br>BC856, SBC856<br>BC857, SBC857<br>BC858|VCEO|−65<br>−45<br>−30|V|
|Collector−Base Voltage<br>BC856, SBC856<br>BC857, SBC857<br>BC858|VCBO|−80<br>−50<br>−30|V|
|Emitter−Base Voltage|VEBO|−5.0|V|
|Collector Current −Continuous|IC|−100|mAdc|
|Collector Current − Peak|IC|−200|mAdc|



## **www.onsemi.com** 

## **SOT−363/SC−88 CASE 419B STYLE 1** 

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**----- Start of picture text -----**<br>
(3) (2) (1)<br>Q1 Q2<br>(4) (5) (6)<br>**----- End of picture text -----**<br>


## **MARKING DIAGRAM** 

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**----- Start of picture text -----**<br>
6<br>3x M<br>1 TU<br>3x = Specific Device Code<br>x = B, F, G, or L<br>(See Ordering Information)<br>M = Date Code<br>= Pb−Free Package<br>**----- End of picture text -----**<br>


(Note: Microdot may be in either location) 

## **THERMAL CHARACTERISTICS** 

|**THERMAL CHARACTERISTICS**|~~es~~|~~ee~~||
|---|---|---|---|
|**Characteristic**<br>~~ee~~|**Symbol**<br>~~ee~~<br>~~es~~|**Max**<br>~~ee~~<br>~~ee~~|**Unit**<br>~~ee~~|
|Total Device Dissipation<br>Per Device<br>FR−5 Board (Note 1)<br>TA= 25°C<br>Derate Above 25°C|PD<br>~~es ~~|380<br>250<br>3.0<br> ~~ee~~|mW<br>mW<br>mW/°C|
|Thermal Resistance,<br>Junction−to−Ambient|R JA|328|°C/W|
|Junction and Storage Temperature<br>Range|TJ, Tstg|−55 to +150|°C|



## **ORDERING INFORMATION** 

See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. 

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−5 = 1.0 x 0.75 x 0.062 in 

*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

Publication Order Number: **BC856BDW1T1/D** 

**1** 

© Semiconductor Components Industries, LLC, 2013 **August, 2016 − Rev. 10** 

## **BC856BDW1T1G, SBC856BDW1T1G Series,  BC857BDW1T1G, SBC857BDW1T1G Series, BC858CDW1T1G Series** 

## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise note|d)|||||
|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**||||||
|Collector−Emitter Breakdown Voltage<br>(IC= −10 mA)<br>BC856, SBC856 Series<br>BC857, SBC857 Series<br>BC858 Series|V(BR)CEO|−65<br>−45<br>−30|−<br>−<br>−|−<br>−<br>−|V|
|Collector−Emitter Breakdown Voltage<br>(IC= −10�A, VEB= 0)<br>BC856, SBC856 Series<br>BC857B, SBC857B Only<br>BC858 Series|V(BR)CES|−80<br>−50<br>−30|−<br>−<br>−|−<br>−<br>−|V|
|Collector−Base Breakdown Voltage<br>(IC= −10�A)<br>BC856, SBC856 Series<br>BC857, SBC857 Series<br>BC858 Series|V(BR)CBO|−80<br>−50<br>−30|−<br>−<br>−|−<br>−<br>−|V|
|Emitter−Base Breakdown Voltage<br>(IE= −1.0�A)<br>BC856, SBC856 Series<br>BC857, SBC857 Series<br>BC858 Series|V(BR)EBO|−5.0<br>−5.0<br>−5.0|−<br>−<br>−|−<br>−<br>−|V|
|Collector Cutoff Current<br>(VCB= −30 V)<br>(VCB= −30 V, TA= 150°C)|ICBO|−<br>−|−<br>−|−15<br>−4.0|nA<br>�A|
|**ON CHARACTERISTICS**||||||
|DC Current Gain<br>(IC= −10�A, VCE= −5.0 V)<br>BC856B, SBC856B, BC857B, SBC857B<br>BC857C, SBC857C, BC858C<br>(IC= −2.0 mA, VCE= −5.0 V)<br>BC856B, SBC856B, BC857B, SBC857B<br>BC857C, SBC857C, BC858C|hFE|−<br>−<br>220<br>420|150<br>270<br>290<br>520|−<br>−<br>475<br>800|−|
|Collector−Emitter Saturation Voltage<br>(IC= −10 mA, IB= −0.5 mA)<br>(IC= −100 mA, IB= −5.0 mA)|VCE(sat)|−<br>−|−<br>−|−0.3<br>−0.65|V|
|Base−Emitter Saturation Voltage<br>(IC= −10 mA, IB= −0.5 mA)<br>(IC= −100 mA, IB= −5.0 mA)|VBE(sat)|−<br>−|−0.7<br>−0.9|−<br>−|V|
|Base−Emitter On Voltage<br>(IC= −2.0 mA, VCE= −5.0 V)<br>(IC= −10 mA, VCE= −5.0 V)|VBE(on)|−0.6<br>−|−<br>−|−0.75<br>−0.82|V|
|**SMALL−SIGNAL CHARACTERISTICS**||||||
|Current−Gain − Bandwidth Product<br>(IC= −10 mA, VCE= −5.0 Vdc, f = 100 MHz)|fT|100|−|−|MHz|
|Output Capacitance<br>(VCB= −10 V, f = 1.0 MHz)|Cob|−|−|4.5|pF|
|Noise Figure<br>(IC= −0.2 mA, VCE= −5.0 Vdc, RS= 2.0 k�, f = 1.0 kHz, BW = 200 Hz)|NF|−|−|10|dB|



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**2** 

**BC856BDW1T1G, SBC856BDW1T1G Series,  BC857BDW1T1G, SBC857BDW1T1G Series, BC858CDW1T1G Series TYPICAL CHARACTERISTICS − BC856/SBC856** 

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-1.0<br>TJ = 25°C<br>V CE  = -5.0 V<br>T A  = 25°C -0.8<br>VBE(sat) @ IC/IB = 10<br>2.0<br>-0.6<br>VBE @ VCE = -5.0 V<br>1.0<br>-0.4<br>0.5<br>-0.2<br>0.2<br>VCE(sat) @ IC/IB = 10<br>0<br>-0.1 -0.2 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Figure 1. DC Current Gain Figure 2. “On” Voltage<br>-2.0 -1.0<br>-1.6 -1.4<br>IC = -20 mA -50 mA -100 mA -200 mA<br>-10 mA<br>-1.2 -1.8<br>�VB for VBE<br>-55°C to 125°C<br>-0.8 -2.2<br>-0.4 -2.6<br>TJ = 25°C<br>0 -3.0<br>-0.02 -0.05 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200<br>IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Figure 3. Collector Saturation Region Figure 4. Base−Emitter Temperature Coefficient<br>40<br>VCE = -5.0 V<br>TJ = 25°C 500<br>20<br>Cib<br>200<br>10 100<br>8.0<br>6.0 50<br>Cob<br>4.0<br>20<br>2.0<br>-0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -1.0 -10 -100<br>VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)<br>V, VOLTAGE (VOLTS)<br>hFE, DC CURRENT GAIN (NORMALIZED)<br>C)°<br>VB, TEMPERATURE COEFFICIENT (mV/<br>VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) θ<br>C, CAPACITANCE (pF)<br>f�, CURRENT-GAIN - BANDWIDTH PRODUCTT<br>**----- End of picture text -----**<br>


**Figure 5. Capacitance** 

**Figure 6. Current−Gain − Bandwidth Product** 

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**3** 

## **BC856BDW1T1G, SBC856BDW1T1G Series,  BC857BDW1T1G, SBC857BDW1T1G Series, BC858CDW1T1G Series TYPICAL CHARACTERISTICS − BC857/SBC857/BC858** 

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2.0 -1.0<br>1.5 VCE = -10 V -0.9 TA = 25°C<br>TA = 25°C -0.8 VBE(sat) @ IC/IB = 10<br>1.0 -0.7<br>-0.6 VBE(on) @ VCE = -10 V<br>0.7<br>-0.5<br>0.5 -0.4<br>-0.3<br>-0.2<br>0.3<br>-0.1 VCE(sat) @ IC/IB = 10<br>0.2 0<br>-0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100<br>IC, COLLECTOR CURRENT (mAdc) IC, COLLECTOR CURRENT (mAdc)<br>Figure 7. Normalized DC Current Gain Figure 8. “Saturation” and “On” Voltages<br>-2.0 1.0<br>TA = 25°C -55°C to +125°C<br>1.2<br>-1.6<br>1.6<br>-1.2<br>2.0<br>-0.8 IC = IC = -50 mA IC = -200 mA<br>-10 mA<br>2.4<br>IC = -100 mA<br>-0.4 IC = -20 mA<br>2.8<br>0<br>-0.02 -0.1 -1.0 -10 -20 -0.2 -1.0 -10 -100<br>IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Figure 9. Collector Saturation Region Figure 10. Base−Emitter Temperature<br>Coefficient<br>10 400<br>Cib 300<br>7.0<br>TA = 25°C 200<br>5.0<br>150 VCE = -10 V<br>TA = 25°C<br>3.0 Cob 100<br>80<br>60<br>2.0<br>40<br>30<br>1.0 20<br>-0.4 -0.6 -1.0 -2.0 -4.0 -6.0 -10 -20 -30 -40 -0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 -50<br>VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc)<br>V, VOLTAGE (VOLTS)<br>hFE, NORMALIZED DC CURRENT GAIN<br>C)°<br>VCE, COLLECTOR-EMITTER VOLTAGE (V) VB, TEMPERATURE COEFFICIENT (mV/<br>θ<br>C, CAPACITANCE (pF)<br>f�, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)T<br>**----- End of picture text -----**<br>


**Figure 11. Capacitances** 

**Figure 12. Current−Gain − Bandwidth Product** 

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**4** 

## **BC856BDW1T1G, SBC856BDW1T1G Series,  BC857BDW1T1G, SBC857BDW1T1G Series, BC858CDW1T1G Series** 

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1.0<br>D = 0.5<br>0.2<br>0.1<br>0.1<br>0.05<br>0.02 Z � JA(t) = r(t) R � JA<br>P (pk) R � JA = 328 ° C/W MAX<br>D CURVES APPLY FOR POWER<br>0.01 0.01 t1 PULSE TRAIN SHOWN READ TIME AT t1<br>t2 TJ(pk) − TC = P(pk) R � JC(t)<br>DUTY CYCLE, D = t1/t2<br>SINGLE PULSE<br>0.001<br>0 1.0 10 100 1.0�k 10�k 100�k 1.0�M<br>t, TIME (ms)<br>r(t), TRANSIENT THERMAL<br>RESISTANCE (NORMALIZED)<br>**----- End of picture text -----**<br>


**Figure 13. Thermal Response** 

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-200<br>1 s 3 ms<br>-100<br>-50 TA = 25°C TJ = 25°C<br>BC558<br>BC557<br>-10<br>BC556<br>-5.0 BONDING WIRE LIMIT<br>THERMAL LIMIT<br>SECOND BREAKDOWN LIMIT<br>-2.0<br>-1.0 -5.0 -10 -30 -45 -65 -100<br>VCE, COLLECTOR-EMITTER VOLTAGE (V)<br>IC, COLLECTOR CURRENT (mA)<br>**----- End of picture text -----**<br>


The safe operating area curves indicate IC−VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. 

The data of Figure 14 is based upon TJ(pk) = 150°C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be calculated from the data in Figure 13. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by the secondary breakdown. 

**Figure 14. Active Region Safe Operating Area** 

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**5** 

**BC856BDW1T1G, SBC856BDW1T1G Series,  BC857BDW1T1G, SBC857BDW1T1G Series, BC858CDW1T1G Series** 

## **ORDERING INFORMATION** 

|**ORDERING INFORMATION**||||
|---|---|---|---|
|**Device**|**Device Marking**|**Package**|**Shipping**†|
|BC856BDW1T1G|3B|SOT−363<br>(Pb−Free)|3,000 / Tape & Reel|
|SBC856BDW1T1G|3B|SOT−363<br>(Pb−Free)|3,000 / Tape & Reel|
|BC856BDW1T3G|3B|SOT−363<br>(Pb−Free)|10,000 / Tape & Reel|
|SBC856BDW1T3G|3B|SOT−363<br>(Pb−Free)|10,000 / Tape & Reel|
|BC857BDW1T1G|3F|SOT−363<br>(Pb−Free)|3,000 / Tape & Reel|
|SBC857BDW1T1G|3F|SOT−363<br>(Pb−Free)|3,000 / Tape & Reel|
|BC857CDW1T1G|3G|SOT−363<br>(Pb−Free)|3,000 / Tape & Reel|
|SBC857CDW1T1G|3G|SOT−363<br>(Pb−Free)|3,000 / Tape & Reel|
|BC858CDW1T1G|3L|SOT−363<br>(Pb−Free)|3,000 / Tape & Reel|



†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

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**6** 

## **BC856BDW1T1G, SBC856BDW1T1G Series,  BC857BDW1T1G, SBC857BDW1T1G Series, BC858CDW1T1G Series PACKAGE DIMENSIONS** 

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SC−88/SC70−6/SOT−363<br>CASE 419B−02<br>2X ISSUE Y<br>aaa H D<br>- D H NOTES:1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETERS.<br>A 3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH,<br>D GAGE PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRU-<br>PLANE SIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END.<br>4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF<br>6 5 4 THE PLASTIC BODY AND DATUM H.<br>L2 L 5. DATUMS A AND B ARE DETERMINED AT DATUM H.<br>E E1 DETAIL A 6. LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP.DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE<br>7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION.<br>1 2 3<br>ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN<br>EXCESS OF DIMENSION b AT MAXIMUM  MATERIAL CONDI-<br>2X aaa C TION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER<br>bbb H D 2X 3 TIPS RADIUS OF THE FOOT.<br>e MILLIMETERS INCHES<br>DIM MIN NOM MAX MIN NOM MAX<br>B ‘on 6X b : A −−− −−− 1.10 −−− −−− 0.043<br>ddd M C A-B D A1 0.00 −−− 0.10 0.000 −−− 0.004<br>TOP VIEW A2 0.70 0.90 1.00 0.027 0.035 0.039<br>b 0.15 0.20 0.25 0.006 0.008 0.010<br>C 0.08 0.15 0.22 0.003 0.006 0.009<br>A2 DETAIL A D 1.80 2.00 2.20 0.070 0.078 0.086<br>A E 2.00 2.10 2.20 0.078 0.082 0.086<br>E1 1.15 1.25 1.35 0.045 0.049 0.053<br>e 0.65 BSC 0.026 BSC<br>SS aaaa L 0.26 0.36 0.46 0.010 0.014 0.018<br>L2 0.15 BSC 0.006 BSC<br>aaa 0.15 0.006<br>bbb 0.30 0.012<br>6X ccc C ccc 0.10 0.004<br>A1 C SEATINGPLANE c a ddd 0.10 a 0.004<br>SIDE VIEW END VIEW STYLE 1:<br>PIN 1. EMITTER 2<br>RECOMMENDED  2. BASE 2<br>SOLDERING FOOTPRINT*  3. COLLECTOR 1<br> 4. EMITTER 1<br> 5. BASE 1<br>0.306X 0.666X  6. COLLECTOR 2<br>To or 2.50<br>0.65 suo<br>PITCH<br>DIMENSIONS: MILLIMETERS<br>*For additional information on our Pb−Free strategy and soldering<br>details, please download the ON Semiconductor Soldering and<br>Mounting Techniques Reference Manual, SOLDERRM/D.<br>**----- End of picture text -----**<br>


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