BC856S,115

Bipolar Transistor Array, General Purpose, Dual PNP, 65 V, 100 mA

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Manufacturer: NEXPERIA
Product type: Bipolar Junction Transistor Arrays - BJT
Transistor Polarity:Dual PNP; Collector Emitter Voltage V(br)ceo:-65V; Power Dissipation Pd:220mW; DC Collector Current:-100mA; DC Current Gain hFE:110hFE; Transistor Case Style:SOT-363;
MSL: -
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 6Pins
Product Range: -
Qualification: -
Transistor Mounting: Surface Mount
Transistor Polarity: Dual PNP
Power Dissipation NPN: -
Power Dissipation PNP: 220mW
Transistor Case Style: SOT-363
Transition Frequency NPN: -
Transition Frequency PNP: 100MHz
Operating Temperature Max: 150°C
DC Current Gain hFE Min NPN: -
DC Current Gain hFE Min PNP: 110hFE
Continuous Collector Current NPN: -
Continuous Collector Current PNP: 100mA
Collector Emitter Voltage Max NPN: -
Collector Emitter Voltage Max PNP: 65V

Delivery and price
Units per pack	1500
Price	0.057 €
Current stock	1000+
Lead time	30 days

Datasheet

## **Important notice** 

Dear Customer, 

On 7 February 2017 the former NXP Standard Product business became a new company with the tradename **Nexperia** . Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets 

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. 

Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use **http://www.nexperia.com** 

Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use **salesaddresses@nexperia.com** (email) 

Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: 

- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved 

Should be replaced with: 

- **© Nexperia B.V. (year). All rights reserved** . 

If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via **salesaddresses@nexperia.com** ). Thank you for your cooperation and understanding, 

Kind regards, 

Team Nexperia 

**==> picture [47 x 52] intentionally omitted <==**

## **BC856S** 

## **65 V, 100 mA PNP/PNP general-purpose transistor** 

**Rev. 02 — 19 February 2009** 

**Product data sheet** 

## **1.** 

## **1.1 General description** 

PNP/PNP general-purpose transistor pair in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. 

## **1.2 Features** 

- I Low collector capacitance 

- I Low collector-emitter saturation voltage 

- I Closely matched current gain 

- I Reduces number of components and board space 

- I No mutual interference between the transistors 

## **1.3 Applications** 

I 

## **1.4 Quick reference data** 

## **Table 1. Quick reference data** 

|**Symbol**|**Parameter**|**Conditions**|**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|---|
|**Per transistor**|||||||
|VCEO|collector-emitter voltage|open base|-|-|−65|V|
|IC|collector current||-|-|−100|mA|
|hFE|DC current gain|VCE=−5 V;|110|-|-||
|||IC=−2 mA|||||



## **2. Pinning information** 

## **Table 2. Pinning** 

|**Pin**<br>**Description**<br>**Simplifed outline**<br>**Graphic symbol**|**Pin**<br>**Description**<br>**Simplifed outline**<br>**Graphic symbol**|
|---|---|
|1<br>emitter TR1<br>2<br>base TR1<br>3<br>collector TR2<br>4<br>emitter TR2<br>5<br>base TR2<br>6<br>collector TR1|1<br>3<br>2<br>4<br>5<br>6<br>sym018<br>2<br>1<br>3<br>5<br>6<br>TR1<br>TR2<br>4|



**==> picture [211 x 101] intentionally omitted <==**

**BC856S** 

**NXP Semiconductors** 

**65 V, 100 mA PNP/PNP general-purpose transistor** 

## **3. Ordering information** 

## **Table 3. Ordering information** 

|**Type number**|**Package**|**Package**|**Package**|
|---|---|---|---|
||**Name**|**Description**|**Version**|
|BC856S|SC-88<br>plastic surface-mounted package; 6 leads<br>SOT363|||



## **4. Marking** 

## **Table 4. Marking codes** 

|**Type number**|**Marking**|**cod**~~**e**~~<br>**[1]**|
|---|---|---|
|BC856S|5F*||



- [1] * = -: made in Hong Kong 

   - = p: made in Hong Kong 

   - = t: made in Malaysia 

   - = W: made in China 

## **5. Limiting values** 

## **Table 5. Limiting values** 

In accordance with the Absolute Maximum Rating System (IEC 60134). 

|**Symbol**|**Parameter**|**Conditions**||**Min**|**Max**|**Unit**|
|---|---|---|---|---|---|---|
|**Per transistor**|||||||
|VCBO|collector-base voltage|open emitter||-|−80|V|
|VCEO|collector-emitter voltage|open base||-|−65|V|
|VEBO|emitter-base voltage|open collector||-|−5|V|
|IC|collector current|||-|−100|mA|
|Ptot|total power dissipation|Tamb≤25°C|[1]|-|220|mW|
||||[2]|-|250|mW|
|**Per device**|||||||
|Ptot|total power dissipation|Tamb≤25°C|[1]|-|300|mW|
||||[2]|-|400|mW|
|Tj|junction temperature|||-|150|°C|
|Tamb|ambient temperature|||−65|+150|°C|
|Tstg|storage temperature|||−65|+150|°C|



- [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 

- [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm[2] . 

© NXP B.V. 2009. All rights reserved. 

BC856S_2 **Product data sheet** 

**Rev. 02 — 19 February 2009** 

**2 of 12** 

**BC856S** 

**NXP Semiconductors** 

**65 V, 100 mA PNP/PNP general-purpose transistor** 

**==> picture [233 x 189] intentionally omitted <==**

**----- Start of picture text -----**<br>
006aab419<br>500<br>Ptot<br>(mW) (1)<br>400<br>(2)<br>300<br>200<br>100<br>0<br>−75 −25 25 75 125 175<br>Tamb (°C)<br>**----- End of picture text -----**<br>


- (1) FR4 PCB, mounting pad for collector 1 cm[2] 

- (2) FR4 PCB, standard footprint 

**Fig 1. Per device: Power derating curves SOT363 (SC-88)** 

## **6. Thermal characteristics** 

## **Table 6. Thermal characteristics** 

|**Symbol**|**Parameter**|**Conditions**|**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|---|
|**Per transistor**|||||||
|Rth(j-a)|thermal resistance from<br>junction to ambient|in free air|[1] -<br>[2] -|-<br>-|568<br>500|K/W<br>K/W|
|Rth(j-sp)|thermal resistance from||-|-|230|K/W|
||junction to solder point||||||
|**Per device**|||||||
|Rth(j-a)|thermal resistance from<br>junction to ambient|in free air|[1] -<br>[2] -|-<br>-|416<br>313|K/W<br>K/W|



- [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 

- [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm[2] . 

© NXP B.V. 2009. All rights reserved. 

BC856S_2 

**Product data sheet** 

**Rev. 02 — 19 February 2009** 

**3 of 12** 

**BC856S** 

**NXP Semiconductors** 

**65 V, 100 mA PNP/PNP general-purpose transistor** 

**==> picture [481 x 189] intentionally omitted <==**

**----- Start of picture text -----**<br>
006aab420<br>10 [3]<br>δ = 1<br>Zth(j-a) 0.75<br>(K/W) 0.50<br>0.33<br>10 [2] 0.20<br>0.10<br>0.05<br>0.02<br>10<br>0.01<br>0<br>1<br>10 [−][5] 10 [−][4] 10 [−][3] 10 [−][2] 10 [−][1] 1 10 10 [2] 10 [3]<br>tp (s)<br>**----- End of picture text -----**<br>


FR4 PCB, standard footprint 

**Fig 2. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values** 

**==> picture [481 x 189] intentionally omitted <==**

**----- Start of picture text -----**<br>
006aab421<br>10 [3]<br>Zth(j-a) δ = 1<br>0.75<br>(K/W)<br>0.50<br>0.33<br>10 [2]<br>0.20<br>0.10<br>0.05<br>0.02<br>10<br>0.01<br>0<br>1<br>10 [−][5] 10 [−][4] 10 [−][3] 10 [−][2] 10 [−][1] 1 10 10 [2] 10 [3]<br>tp (s)<br>**----- End of picture text -----**<br>


FR4 PCB, mounting pad for collector 1 cm[2] 

**Fig 3. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values** 

© NXP B.V. 2009. All rights reserved. 

BC856S_2 **Product data sheet** 

**Rev. 02 — 19 February 2009** 

**4 of 12** 

**BC856S** 

**NXP Semiconductors** 

**65 V, 100 mA PNP/PNP general-purpose transistor** 

## **7. Characteristics** 

## **Table 7. Characteristics** 

Tamb = 25 ° 

|**Symbol**<br>**Parameter**|**Conditions**<br>**Min**<br>**Typ**<br>**Max**<br>**Unit**|
|---|---|
|**Per transistor**||
|ICBO<br>collector-base cut-off<br>current|VCB=−30 V; IE= 0 A<br>-<br>-<br>−15<br>nA|
||VCB=−30 V; IE= 0 A;<br>Tj= 150°C<br>-<br>-<br>−5<br>µA|
|IEBO<br>emitter-base cut-off<br>current|VEB=−5 V; IC= 0 A<br>-<br>-<br>−100<br>nA|
|hFE<br>DC current gain|VCE=−5 V; IC=−2 mA<br>110<br>-<br>-|
|VCEsat<br>collector-emitter<br>saturation voltage|IC=−10 mA;<br>IB=−0.5 mA<br>-<br>-<br>−100<br>mV|
||IC=−100 mA; IB=−5 mA<br>[1] -<br>-<br>−300<br>mV|
|VBEsat<br>base-emitter<br>saturation voltage|IC=−10 mA;<br>IB=−0.5 mA<br>-<br>700<br>-<br>mV|
|VBE<br>base-emitter voltage|IC=−2 mA; VCE=−5 V<br>−600<br>−650<br>−750<br>mV|
||IC=−10 mA; VCE=−5 V<br>-<br>-<br>−820<br>mV|
|Cc<br>collector capacitance|IE= ie= 0 A; VCB=−10 V;<br>f = 1 MHz<br>-<br>-<br>2.5<br>pF|
|fT<br>transition frequency|IC=−10 mA; VCE=−5 V;<br>f = 100 MHz<br>100<br>-<br>-<br>MHz|



[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 

© NXP B.V. 2009. All rights reserved. 

BC856S_2 **Product data sheet** 

**Rev. 02 — 19 February 2009** 

**5 of 12** 

**BC856S** 

**NXP Semiconductors** 

**65 V, 100 mA PNP/PNP general-purpose transistor** 

**==> picture [233 x 189] intentionally omitted <==**

**----- Start of picture text -----**<br>
006aab429<br>500<br>hFE<br>400<br>(1)<br>300<br>(2)<br>200<br>(3)<br>100<br>0<br>−10 [−][1] −1 −10 −10 [2] −10 [3]<br>IC (mA)<br>**----- End of picture text -----**<br>


**==> picture [233 x 189] intentionally omitted <==**

**----- Start of picture text -----**<br>
−0.20 IB (mA) = −5.0 006aab430<br>−4.5<br>IC<br>(A) −4.0 −3.5<br>−0.15 −3.0 −2.5<br>−2.0<br>−1.5<br>−0.10 −1.0<br>−0.5<br>−0.05<br>0<br>0 −1 −2 −3 −4 −5<br>VCE (V)<br>**----- End of picture text -----**<br>


VCE = −5 V 

Tamb = 25 °C 

- (1) Tamb = 150 °C 

- (2) Tamb = 25 °C 

(3) Tamb = −55 °C **Fig 4. Per transistor: DC current gain as a function of Fig 5. Per transistor: Collector current as a function collector current; typical values of collector-emitter voltage; typical values** 

**==> picture [234 x 276] intentionally omitted <==**

**----- Start of picture text -----**<br>
−1.2 006aab431<br>VBE<br>(V)<br>−1.0<br>(1)<br>−0.8<br>(2)<br>−0.6<br>(3)<br>−0.4<br>−0.2<br>−10 [−][1] −1 −10 −10 [2] −10 [3]<br>IC (mA)<br>VCE = −5 V<br>(1) Tamb = −55 °C<br>(2) Tamb = 25 °C<br>(3) Tamb = 150 °C<br>Fig 6. Per transistor: Base-emitter voltage as a<br>function of collector current; typical values<br>**----- End of picture text -----**<br>


**==> picture [233 x 189] intentionally omitted <==**

**----- Start of picture text -----**<br>
−1.2 006aab432<br>VBEsat<br>(V)<br>−1.0<br>(1)<br>−0.8 (2)<br>−0.6 (3)<br>−0.4<br>−0.2<br>−10 [−][1] −1 −10 −10 [2] −10 [3]<br>IC (mA)<br>**----- End of picture text -----**<br>


IC/IB = 20 

- (1) Tamb = −55 °C (2) Tamb = 25 °C (3) Tamb = 150 °C 

- **Fig 7. Per transistor: Base-emitter saturation voltage as a function of collector current; typical values** 

© NXP B.V. 2009. All rights reserved. 

BC856S_2 

**Product data sheet** 

**Rev. 02 — 19 February 2009** 

**6 of 12** 

**BC856S** 

**NXP Semiconductors** 

## **65 V, 100 mA PNP/PNP general-purpose transistor** 

**==> picture [497 x 304] intentionally omitted <==**

**----- Start of picture text -----**<br>
−1 006aab433 10 [9] 006aab434<br>VCEsat fT<br>(V) (Hz)<br>−10 [−][1] 10 [8]<br>(1)<br>(2)<br>(3)<br>−10 [−][2] 10 [7]<br>−10 [−][1] −1 −10 −10 [2] −10 [3] −10 [−][1] −1 −10 −10 [2]<br>IC (mA) IC (mA)<br>IC/IB = 20 VCE = −5 V; f = 1 MHz; Tamb = 25 °C<br>(1) Tamb = 150 °C<br>(2) Tamb = 25 °C<br>(3) Tamb = −55 °C<br>Fig 8. Per transistor: Collector-emitter saturation Fig 9. Per transistor: Transition frequency as a<br>voltage as a function of collector current; function of collector current; typical values<br>typical values<br>**----- End of picture text -----**<br>


© NXP B.V. 2009. All rights reserved. 

BC856S_2 **Product data sheet** 

**Rev. 02 — 19 February 2009** 

**7 of 12** 

**BC856S** 

**NXP Semiconductors** 

**65 V, 100 mA PNP/PNP general-purpose transistor** 

## **8. Package outline** 

**==> picture [236 x 163] intentionally omitted <==**

**----- Start of picture text -----**<br>
2.2 1.1<br>1.8 0.8<br>6 5 4 0.45<br>0.15<br>2.2 1.35<br>2.0 1.15 pin 1<br>index<br>1 2 3<br>0.3 0.25<br>0.65<br>0.2 0.10<br>1.3<br>Dimensions in mm 06-03-16<br>**----- End of picture text -----**<br>


**Fig 10. Package outline SOT363 (SC-88)** 

## **9. Packing information** 

## **Table 8. Packing methods** 

The indicated -xxx are the last three digits of the 12NC ordering code ~~.~~ [1] 

|**Type number**<br>**Package**<br>**Description**|**Packing quantity**|**Packing quantity**|
|---|---|---|
||**3000**|**10000**|
|BC856S<br>SOT363<br>4 mm pitch, 8 mm tape and reel; T1<br>[2] <br>4 mm pitch, 8 mm tape and reel; T2<br>[3]|-115<br>-135||
||-125<br>-165||



- [1] For further information and the availability of packing methods, see Section 13. 

- [2] T1: normal taping 

- [3] T2: reverse taping 

© NXP B.V. 2009. All rights reserved. 

BC856S_2 

**Product data sheet** 

**Rev. 02 — 19 February 2009** 

**8 of 12** 

**BC856S** 

**NXP Semiconductors** 

**65 V, 100 mA PNP/PNP general-purpose transistor** 

## **10. Soldering** 

**==> picture [324 x 150] intentionally omitted <==**

**----- Start of picture text -----**<br>
2.65<br>solder lands<br>2.35 1.5 0.6 0.5 0.4 (2×)<br>(4×) (4×) solder resist<br>solder paste<br>0.5 0.6<br>occupied area<br>(4×) (2×)<br>0.6<br>Dimensions in mm<br>(4×)<br>1.8 sot363_fr<br>**----- End of picture text -----**<br>


## **Fig 11.** 

**==> picture [372 x 187] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.5<br>solder lands<br>4.5 0.3 2.5<br>solder resist<br>occupied area<br>1.5<br>Dimensions in mm<br>preferred transport<br>1.3 1.3 direction during soldering<br>2.45<br>5.3 sot363_fw<br>**----- End of picture text -----**<br>


**Fig 12. Wave soldering footprint SOT363 (SC-88)** 

© NXP B.V. 2009. All rights reserved. 

BC856S_2 

**Product data sheet** 

**Rev. 02 — 19 February 2009** 

**9 of 12** 

**BC856S** 

**NXP Semiconductors** 

**65 V, 100 mA PNP/PNP general-purpose transistor** 

## **11. Revision history** 

**Table 9. Revision history** 

|**Document ID**|**Release date**<br>**Data sheet status**|**Release date**<br>**Data sheet status**|**Change notice**|**Supersedes**|
|---|---|---|---|---|
|BC856S_2|20090219<br>Product data sheet||-|BC856S_1|
|Modifcations:|**•**|The format of this data sheet has been redesigned to comply with the new identity guidelines|||
|||of NXP Semiconductors.|||
||**•**|Legal texts have been adapted to the new|company name where appropriate.||
||**•**|Section 1.2 “F<br>eatures”: adapted|||
||**•**|Section 4 “Mar<br>king”: updated|||
||**•**|Section 7 “Char<br>acter<br>istics”: enhanced|||
||**•**|Section9“P<br>ac<br>kinginf<br>or<br>mation”: added|||
||**•**|Section 10“Solder<br>ing”: added|||
||**•**|Section 12 “Legal inf<br>or<br>mation”: updated|||
|BC856S_1|19990824<br>Product specifcation||-|-|



© NXP B.V. 2009. All rights reserved. 

BC856S_2 **Product data sheet** 

**Rev. 02 — 19 February 2009** 

**10 of 12** 

**BC856S** 

**NXP Semiconductors** 

**65 V, 100 mA PNP/PNP general-purpose transistor** 

## **12. Legal information** 

## **12.1 Data sheet status** 

|**Document statu**|**s**<br>**[1]**<br>**[2]**<br>**Product status**<br>**[3]**<br>**Defnition**|
|---|---|
|Objective [short] data sheet<br>Development<br>This document contains data from the objective specifcation for product development.||
|Preliminary [short] data sheet<br>Qualifcation<br>This document contains data from the preliminary specifcation.||
|Product [short] data sheet<br>Production<br>This document contains the product specifcation.||



[1] Please consult the most recently issued document before initiating or completing a design. 

[2] 

[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 

## **12.2** 

**Draft —** The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. 

**Short data sheet —** A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 

## **12.3 Disclaimers** 

**General —** Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. 

**Right to make changes —** NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. 

**Suitability for use —** NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental 

damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. 

**Applications —** Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 

**Limiting values —** the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. 

**Terms and conditions of sale —** NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. 

**No offer to sell or license —** Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 

**Quick reference data —** The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 

## **12.4 Trademarks** 

Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 

## **13. Contact information** 

For more information, please visit: **http://www.nxp.com** 

**salesaddresses@nxp.com** 

© NXP B.V. 2009. All rights reserved. 

BC856S_2 

**Product data sheet** 

**Rev. 02 — 19 February 2009** 

**11 of 12** 

**BC856S** 

**NXP Semiconductors** 

**65 V, 100 mA PNP/PNP general-purpose transistor** 

## **14. Contents** 

|**1**|**Product profle . . . . . . . . . . . . . . . . . . . . . . . . . .  1**|
|---|---|
|1.1|General description. . . . . . . . . . . . . . . . . . . . . . 1|
|1.2|Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1|
|1.3|Applications  . . . . . . . . . . . . . . . . . . . . . . . . . . . 1|
|1.4|Quick reference data. . . . . . . . . . . . . . . . . . . . . 1|
|**2**|**Pinning information. . . . . . . . . . . . . . . . . . . . . .  1**|
|**3**|**Ordering information . . . . . . . . . . . . . . . . . . . . .  2**|
|**4**|**Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  2**|
|**5**|**Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . .  2**|
|**6**|**Thermal characteristics. . . . . . . . . . . . . . . . . . .  3**|
|**7**|**Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . .  5**|
|**8**|**Package outline . . . . . . . . . . . . . . . . . . . . . . . . .  8**|
|**9**|**Packing information. . . . . . . . . . . . . . . . . . . . . .  8**|
|**10**|**Soldering  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  9**|
|**11**|**Revision history. . . . . . . . . . . . . . . . . . . . . . . .  10**|
|**12**|**Legal information. . . . . . . . . . . . . . . . . . . . . . .  11**|
|12.1|Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11|
|12.2|Defnitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11|
|12.3|Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11|
|12.4|Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11|
|**13**|**Contact information. . . . . . . . . . . . . . . . . . . . .  11**|
|**14**|**Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  12**|



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Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. 

**© NXP B.V. 2009.** 

**All rights reserved.** 

For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com **Date of release: 19 February 2009 Document identifier: BC856S_2**

Updated at June 10, 2026

Nexperia is a dedicated global leader in discretes, logic, and MOSFET devices. Built on over half a century of semiconductor expertise and operating independently since 2017, the company produces consistently reliable components at an exceptional volume of 85 billion units annually. With its own manufacturing facilities, Nexperia delivers industry-leading small packages that combine power and thermal efficiency with best-in-class quality, meeting the rigorous standards of the automotive sector. Our extensive Nexperia portfolio is heavily focused on discrete semiconductors, providing engineers with a robust selection of core building blocks. This includes a comprehensive range of diodes and rectifiers, featuring a vast selection of Zener single diodes and Schottky diodes designed for precise voltage regulation and efficient power routing. Additionally, we offer an expansive array of bipolar transistors and single MOSFETs tailored for reliable switching and amplification in demanding applications. Beyond these primary offerings, the lineup extends into specialized circuit protection and passive components. This includes transient voltage suppressor (TVS) diodes, Zener array diodes, and small signal diodes, alongside dual MOSFETs and fast recovery rectifiers. For comprehensive design needs, the selection also encompasses integrated passive filters, common mode chokes, and precision timers and oscillators, ensuring a complete solution for high-performance electronic systems.

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