BC856CMTF
Bipolar (BJT) Single Transistor, PNP, 65 V, 100 mA, 310 mW, SOT-23, Surface Mount
- Manufacturer: ONSEMI
- Product type: Single Bipolar Junction Transistors - BJT
- No. of Pins: 3Pins
- Power Dissipation: 310mW
- DC Current Gain hFE: 420hFE
- Transistor Mounting: Surface Mount
- Transistor Polarity: PNP
- Transition Frequency: 150MHz
- Transistor Case Style: SOT-23
- DC Current Gain hFE Min: 420hFE
- Operating Temperature Max: 150°C
- Continuous Collector Current: 100mA
- Collector Emitter Voltage Max: 65V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.019 € |
| Current stock | 10+ |
| Lead time | 30 days |
## **Is Now Part of** **To learn more about ON Semiconductor, please visit our website at www.onsemi.com** ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **BC856- BC860** ## **PNP Epitaxial Silicon Transistor** ## **Features** - Switching and Amplifier Applications - Suitable for automatic insertion in thick and thin-film circuits - Low Noise: BC859, BC860 - Complement to BC846 ... BC850 **==> picture [119 x 172] intentionally omitted <==** **----- Start of picture text -----**<br> August 2006<br>tm<br>3<br>2<br>SOT-23<br>1<br>1. Base 2. Emitter 3. Collector<br>**----- End of picture text -----**<br> |**Absolute Maximum Ratin**|**Absolute Maximum Ratings***Ta= 25°C unless otherwise noted||| |---|---|---|---| |**Symbol**|**Parameter**|**Value**|**Units**| |VCBO|Collector-Base Voltage<br>: BC856<br>: BC857/860<br>: BC858/859|-80<br>-50<br>-30|V<br>V<br>V| |VCEO|Collector-Emitter Voltage<br>: BC856<br>: BC857/860<br>: BC858/859|-65<br>-45<br>-30|V<br>V<br>V| |VEBO|Emitter-Base Voltage|-5|V| |IC|Collector Current (DC)|-100|mA| |PC|Collector Power Dissipation|310|mW| |TJ|Junction Temperature|150|°C| |TSTG|Storage Temperature|-65 ~ 150|°C| * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. |**Electrical Characteristics***<br>~~ee~~|**Electrical Characteristics***Ta=25°C|C unless otherwise noted||||| |---|---|---|---|---|---|---| |**Symbol**<br>~~ee~~|**Parameter**|**Test Condition**|**Min.**|**Typ.**|**Max.**|**Units**| |ICBO<br>~~ee~~<br>~~a~~|Collector Cut-off Current|VCB= -30V, IE=0|||-15|nA| |hFE|DC Current Gain|VCE= -5V, IC= -2mA|110||800|| |VCE(sat)<br>~~a~~|Collector-Emitter Saturation Voltage|IC= -10mA, IB= -0.5mA<br>IC= -100mA, IB= -5mA||-90<br>-250|-300<br>-650|mV<br>mV| |VBE(sat)|Base-Emitter Saturation Voltage|IC= -10mA, IB= -0.5mA<br>IC= -100mA, IB= -5mA||-700<br>-900||mV<br>mV| |VBE(on)|Base-Emitter On Voltage|VCE= -5V, IC= -2mA<br>VCE= -5V, IC= -10mA|-600|-660|-750<br>-800|mV<br>mV| |fT|Current Gain Bandwidth Product|VCE= -5V, IC= -10mA<br>f=100MHz||150||MHz| |Cob<br>~~a~~|Output Capacitance|VCB= -10V, IE=0, f=1MHz|||6|pF| |NF|Noise Figure<br> : BC856/857/858<br>: BC859/860|VCE= -5V, IC= -200µA<br>RG=2KΩ,f=1KHz||2<br>1|10<br>4|dB<br>dB| ||: BC859<br>: BC860|VCE= -5V, IC= -200µA<br>RG=2KΩ, f=30~15000Hz||1.2<br>1.2|4<br>2|dB<br>dB| - Pulse Test: Pulse Width≤300µs, Duty Cycle≤2% **1** ©2006 Fairchild Semiconductor Corporation BC856- BC860 Rev. B www.fairchildsemi.com ## **hFE Classification** |**hFE Classification**|||| |---|---|---|---| |Classification|A|B|C| |hFE|110 ~ 220|200 ~ 450|420 ~ 800| ## **Ordering Information** |**Device(note1)**|**Device Marking**|**Package**|**Packing Method**|**Qty(pcs)**|**Pin Difinitions**| |---|---|---|---|---|---| |BC856AMTF|9AA|SOT-23|Tape & Reel|3000|1.Base 2.Emitter 3.Collector| |BC856BMTF|9AB|SOT-23|Tape & Reel|3000|1.Base 2.Emitter 3.Collector| |BC856CMTF|9AC|SOT-23|Tape & Reel|3000|1.Base 2.Emitter 3.Collector| |BC857AMTF|9BA|SOT-23|Tape & Reel|3000|1.Base 2.Emitter 3.Collector| |BC857BMTF|9BB|SOT-23|Tape & Reel|3000|1.Base 2.Emitter 3.Collector| |BC857CMTF|9BC|SOT-23|Tape & Reel|3000|1.Base 2.Emitter 3.Collector| |BC858AMTF|9CA|SOT-23|Tape & Reel|3000|1.Base 2.Emitter 3.Collector| |BC858BMTF|9CB|SOT-23|Tape & Reel|3000|1.Base 2.Emitter 3.Collector| |BC858CMTF|9CC|SOT-23|Tape & Reel|3000|1.Base 2.Emitter 3.Collector| |BC859AMTF|9DA|SOT-23|Tape & Reel|3000|1.Base 2.Emitter 3.Collector| |BC859BMTF|9DB|SOT-23|Tape & Reel|3000|1.Base 2.Emitter 3.Collector| |BC859CMTF|9DC|SOT-23|Tape & Reel|3000|1.Base 2.Emitter 3.Collector| |BC860AMTF|9EA|SOT-23|Tape & Reel|3000|1.Base 2.Emitter 3.Collector| |BC860BMTF|9EB|SOT-23|Tape & Reel|3000|1.Base 2.Emitter 3.Collector| |BC860CMTF|9EC|SOT-23|Tape & Reel|3000|1.Base 2.Emitter 3.Collector| Note1 : Affix “-A,-B,-C” means hFE classification. Affix “-M” means the matte type package. Affix “-TF” means the tape & reel type packing. **2** www.fairchildsemi.com BC856- BC860 Rev. B ## **Typical Performance Characteristics** **==> picture [434 x 177] intentionally omitted <==** **----- Start of picture text -----**<br> -50<br>1000<br>-45<br>-40 IB = - 400IB = - 350µA µA VCE = - 5V<br>-35 IB = - 300µA<br>-30 IB = - 250µA<br>-25 IB = - 200µA 100<br>-20 IB = - 150µA<br>-15 IB = - 100µA<br>-10<br>-5 IB = - 50µA<br>-0 -0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 10-0.1 -1 -10 -100<br>VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT<br>, DC CURRENT GAIN<br>[mA], COLLECTOR CURRENTIC hFE<br>**----- End of picture text -----**<br> **Figure 1. Static Characteristic** **Figure 2. DC current Gain** **==> picture [439 x 390] intentionally omitted <==** **----- Start of picture text -----**<br> -10 -100<br>IC = 10 IB VCE = - 5V<br>-1 VBE(sat) -10<br>-0.1 -1<br>VCE(sat)<br>-0.01 -0.1<br>-0.1 -1 -10 -100 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2<br>IC[mA], COLLECTOR CURRENT VBE[V], BASE-EMITTER VOLTAGE<br>Figure 3. Base-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage<br> Collector-Emitter Saturation Voltage<br>1000<br>f=1MHz IE=0 f=1MHz IE=0<br>10<br>100<br>1 10<br>-1 -10 -100 -1 -10<br>VCB[V], COLLECTOR-BASE VOLTAGE IC[mA], COLLECTOR CURRENT<br>Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product<br>(sat)[V], SATURATION VOLTAGE<br>CE<br>[mA], COLLECTOR CURRENTIC<br>(sat), V<br>BE<br>V<br>[pF], CAPACITANCE<br>ob<br>C<br>[MHz], CURRENT GAIN-BANDWIDTH PRODUCTfT<br>**----- End of picture text -----**<br> **3** www.fairchildsemi.com BC856- BC860 Rev. B **==> picture [388 x 518] intentionally omitted <==** **----- Start of picture text -----**<br> Mechanical Dimensions<br>SOT-23<br>0.40 ± 0.03<br>0.03~0.10<br>0.38 REF<br>0.40 ± 0.03 +0.05<br>0.12 –0.023<br>0.96~1.14<br>2.90 ± 0.10<br>0.95 ± 0.03 0.95 ± 0.03<br>1.90 ± 0.03 0.508REF<br>Dimensions in Millimeters<br>0.20 MIN<br>0.45~0.60<br>1.30 0.10 ± 2.40 0.10 ±<br>0.97REF<br>**----- End of picture text -----**<br> **4** www.fairchildsemi.com BC856- BC860 Rev. B ## **TRADEMARKS** The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. |FACT Quiet Series™<br>GlobalOptoisolator™<br>GTO™<br>HiSeC™<br>I2C™<br>_i-Lo_™<br>ImpliedDisconnect™<br>IntelliMAX™<br>ISOPLANAR™<br>LittleFET™<br>MICROCOUPLER™<br>MicroFET™<br>MicroPak™<br>MICROWIRE™<br>MSX™<br>MSXPro™<br>ACEx™<br>ActiveArray™<br>Bottomless™<br>Build it Now™<br>CoolFET™<br>_CROSSVOLT_™<br>DOME™<br>EcoSPARK™<br>E2CMOS™<br>EnSigna™<br>FACT™<br>FAST®<br>FASTr™<br>FPS™<br>FRFET™<br>Across the board. Around the world.™<br>The Power Franchise®<br>Programmable Active Droop™|OCX™<br>OCXPro™<br>OPTOLOGIC®<br>OPTOPLANAR™<br>PACMAN™<br>POP™<br>Power247™<br>PowerEdge™<br>PowerSaver™<br>PowerTrench®<br>QFET®<br>QS™<br>QT Optoelectronics™<br>Quiet Series™<br>RapidConfigure™<br>RapidConnect™<br>µSerDes™<br>ScalarPump™|SILENT SWITCHER®<br>SMART START™<br>SPM™<br>Stealth™<br>SuperFET™<br>SuperSOT™-3<br>SuperSOT™-6<br>SuperSOT™-8<br>SyncFET™<br>TCM™<br>TinyBoost™<br>TinyBuck™<br>TinyPWM™<br>TinyPower™<br>TinyLogic®<br>TINYOPTO™<br>TruTranslation™<br>UHC™|UltraFET®<br>UniFET™<br>VCX™<br>Wire™| |---|---|---|---| ## **DISCLAIMER** FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. ## **LIFE SUPPORT POLICY** FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ## **PRODUCT STATUS DEFINITIONS Definition of Terms** |**PRODUCT STATUS DEFINITIONS**<br>**Definition of Terms**||| |---|---|---| |**Datasheet Identification**|**Product Status**|**Definition**| |Advance Information|Formative or In Design|This datasheet contains the design specifications for<br>product development. Specifications may change in<br>any manner without notice.| |Preliminary|First Production|This datasheet contains preliminary data, and<br>supplementary data will be published at a later date.<br>Fairchild Semiconductor reserves the right to make<br>changes at any time without notice in order to improve<br>design.| |No Identification Needed|Full Production|This datasheet contains final specifications. Fairchild<br>Semiconductor reserves the right to make changes at<br>any time without notice in order to improve design.| |Obsolete|Not In Production|This datasheet contains specifications on a product<br>that has been discontinued by Fairchild semiconductor.<br>The datasheet is printed for reference information only.| Rev. I20 **5** www.fairchildsemi.com BC856- BC860 Rev. B ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **PUBLICATION ORDERING INFORMATION** **N. American Technical Support** : 800−282−9855 Toll Free **ON Semiconductor Website** : **www.onsemi.com** USA/Canada ## **LITERATURE FULFILLMENT** : Literature Distribution Center for ON Semiconductor **Order Literature** : http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA **Europe, Middle East and Africa Technical Support: Phone** : 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 **Fax** : 303−675−2176 or 800−344−3867 Toll Free USA/Canada **Japan Customer Focus Center Email** : orderlit@onsemi.com Phone: 81−3−5817−1050 © Semiconductor Components Industries, LLC www.onsemi.com **www.onsemi.com** **1**
Updated at February 9, 2023
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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