BC856BWT1G

BC856B, BC857B, BC858A 

## General Purpose Transistors 

## **PNP Silicon** 

These transistors are designed for general purpose amplifier applications. They are housed in the SC−70/SOT−323 which is designed for low power surface mount applications. 

## **Features** 

- S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 

## **www.onsemi.com** 

**==> picture [70 x 90] intentionally omitted <==**

**----- Start of picture text -----**<br>
COLLECTOR<br>3<br>1<br>BASE<br>&<br>2<br>EMITTER<br>**----- End of picture text -----**<br>


**==> picture [122 x 40] intentionally omitted <==**

**----- Start of picture text -----**<br>
3<br>SC−70/SOT−323<br>CASE 419<br>1 ® STYLE 3<br>2<br>**----- End of picture text -----**<br>


**MAXIMUM RATINGS** (TA = 25 ° C unless otherwise noted) 1 **STYLE 3** 2 **Rating Symbol Value Unit** Collector-Emitter Voltage VCEO V BC856 −65 **MARKING DIAGRAM** BC857 −45 BC858 −30 Collector-Base Voltage VCBO V XX M BC856 −80 BC857 −50 BC858 −30 1 Emitter−Base Voltage VEBO −5.0 V XX = Specific Device Code Collector Current − Continuous IC −100 mAdc M = Date Code* ~~—H~~ = Pb−Free Package **THERMAL CHARACTERISTICS** (Note: Microdot may be in either location) **Characteristic Symbol Max Unit** *Date Code orientation may vary depending upon manufacturing location. Total Device Dissipation FR−5 Board, PD 150 mW (Note 1) TA = 25 ° C Thermal Resistance, R JA 883 ° C/W **ORDERING INFORMATION** Junction−to−Ambient See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. ~~a~~ Junction and Storage Temperature TJ, Tstg −55 to +150 ° C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be ~~-~~ assumed, damage may occur and reliability may be affected. 1. FR−5 = 1.0 x 0.75 x 0.062 in. 

**ORDERING INFORMATION** See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. 

Publication Order Number: **BC856BWT1/D** 

**1** 

© Semiconductor Components Industries, LLC, 2015 **April, 2015 − Rev. 4** 

**BC856B, BC857B, BC858A** 

## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted)||||||
|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**||||||
|Collector−Emitter Breakdown Voltage<br>BC856<br>(IC= −10 mA)<br>BC857<br>BC858|V(BR)CEO|−65<br>−45<br>−30|−<br>−<br>−|−<br>−<br>−|V|
|Collector−Emitter Breakdown Voltage<br>BC856<br>(IC= −10�A, VEB= 0)<br>BC857<br>BC858|V(BR)CES|−80<br>−50<br>−30|−<br>−<br>−|−<br>−<br>−|V|
|Collector−Base Breakdown Voltage<br>BC856<br>(IC= −10�A)<br>BC857<br>BC858|V(BR)CBO|−80<br>−50<br>−30|−<br>−<br>−|−<br>−<br>−|V|
|Emitter−Base Breakdown Voltage<br>BC856<br>(IE= −1.0�A)<br>BC857<br>BC858|V(BR)EBO|−5.0<br>−5.0<br>−5.0|−<br>−<br>−|−<br>−<br>−|V|
|Collector Cutoff Current (VCB= −30 V)<br>Collector Cutoff Current(VCB= −30 V, TA= 150°C)|ICBO|−<br>−|−<br>−|−15<br>−4.0|nA<br>�A|
|**ON CHARACTERISTICS**||||||
|DC Current Gain<br>BC856A, BC585A<br>(IC= −10�A, VCE= −5.0 V)<br>BC856B, BC857B, BC858B<br>BC857C<br>(IC= −2.0 mA, VCE= −5.0 V)<br>BC856A, BC858A<br>BC856B, BC857B, BC858B<br>BC857C|hFE|−<br>−<br>−<br>125<br>220<br>420|90<br>150<br>270<br>180<br>290<br>520|−<br>−<br>−<br>250<br>475<br>800|−|
|Collector−Emitter Saturation Voltage<br>(IC= −10 mA, IB= −0.5 mA)<br>(IC= −100 mA, IB= −5.0 mA)|VCE(sat)|−<br>−|−<br>−|−0.3<br>−0.65|V|
|Base−Emitter Saturation Voltage<br>(IC= −10 mA, IB= −0.5 mA)<br>(IC= −100 mA, IB= −5.0 mA)|VBE(sat)|−<br>−|−0.7<br>−0.9|−<br>−|V|
|Base−Emitter On Voltage<br>(IC= −2.0 mA, VCE= −5.0 V)<br>(IC= −10 mA, VCE= −5.0 V)|VBE(on)|−0.6<br>−|−<br>−|−0.75<br>−0.82|V|
|**SMALL−SIGNAL CHARACTERISTICS**||||||
|Current−Gain − Bandwidth Product<br>(IC= −10 mA, VCE= −5.0 Vdc, f = 100 MHz)|fT|100|−|−|MHz|
|Output Capacitance<br>(VCB= −10 V, f = 1.0 MHz)|Cob|−|−|4.5|pF|
|Noise Figure<br>(IC= −0.2 mA, VCE= −5.0 Vdc, RS= 2.0 k�,<br>f = 1.0 kHz, BW = 200 Hz)|NF|−|−|10|dB|



**www.onsemi.com** 

**2** 

**BC856B, BC857B, BC858A** 

## **BC857/BC858** 

**==> picture [490 x 597] intentionally omitted <==**

**----- Start of picture text -----**<br>
2.0 -1.0<br>1.5 VCE = -10 V -0.9 TA = 25°C<br>TA = 25°C -0.8 VBE(sat) @ IC/IB = 10<br>1.0 -0.7<br>-0.6 VBE(on) @ VCE = -10 V<br>0.7<br>-0.5<br>0.5 -0.4<br>-0.3<br>-0.2<br>0.3<br>-0.1 VCE(sat) @ IC/IB = 10<br>0.2 0<br>-0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100<br>IC, COLLECTOR CURRENT (mAdc) IC, COLLECTOR CURRENT (mAdc)<br>Figure 1. Normalized DC Current Gain Figure 2. “Saturation” and “On” Voltages<br>-2.0 1.0<br>TA = 25°C -55°C to +125°C<br>1.2<br>-1.6<br>1.6<br>-1.2<br>2.0<br>-0.8 IC = IC = -50 mA IC = -200 mA<br>-10 mA<br>2.4<br>IC = -100 mA<br>-0.4 IC = -20 mA<br>2.8<br>0<br>-0.02 -0.1 -1.0 -10 -20 -0.2 -1.0 -10 -100<br>IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Figure 3. Collector Saturation Region Figure 4. Base−Emitter Temperature Coefficient<br>10 400<br>Cib 300<br>7.0<br>TA = 25°C 200<br>5.0<br>150 VCE = -10 V<br>TA = 25°C<br>3.0 Cob 100<br>80<br>60<br>2.0<br>40<br>30<br>1.0 20<br>-0.4 -0.6 -1.0 -2.0 -4.0 -6.0 -10 -20 -30 -40 -0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 -50<br>VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc)<br>V, VOLTAGE (VOLTS)<br>hFE, NORMALIZED DC CURRENT GAIN<br>C)°<br>VCE, COLLECTOR-EMITTER VOLTAGE (V) VB, TEMPERATURE COEFFICIENT (mV/<br>θ<br>C, CAPACITANCE (pF)<br>f�, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)T<br>**----- End of picture text -----**<br>


**Figure 5. Capacitances** 

**Figure 6. Current−Gain − Bandwidth Product** 

**www.onsemi.com** 

**3** 

**BC856B, BC857B, BC858A** 

**BC856** 

**==> picture [489 x 597] intentionally omitted <==**

**----- Start of picture text -----**<br>
-1.0<br>TJ = 25°C<br>V CE  = -5.0 V<br>T A  = 25°C -0.8<br>VBE(sat) @ IC/IB = 10<br>2.0<br>-0.6<br>VBE @ VCE = -5.0 V<br>1.0<br>-0.4<br>0.5<br>-0.2<br>0.2<br>VCE(sat) @ IC/IB = 10<br>0<br>-0.1 -0.2 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Figure 7. DC Current Gain Figure 8. “On” Voltage<br>-2.0 -1.0<br>-1.6 -1.4<br>IC = -20 mA -50 mA -100 mA -200 mA<br>-10 mA<br>-1.2 -1.8<br>�VB for VBE<br>-55°C to 125°C<br>-0.8 -2.2<br>-0.4 -2.6<br>TJ = 25°C<br>0 -3.0<br>-0.02 -0.05 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200<br>IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Figure 9. Collector Saturation Region Figure 10. Base−Emitter Temperature Coefficient<br>40<br>VCE = -5.0 V<br>TJ = 25°C 500<br>20<br>Cib<br>200<br>10 100<br>8.0<br>6.0 50<br>Cob<br>4.0<br>20<br>2.0<br>-0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -1.0 -10 -100<br>VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)<br>V, VOLTAGE (VOLTS)<br>hFE, DC CURRENT GAIN (NORMALIZED)<br>C)°<br>VB, TEMPERATURE COEFFICIENT (mV/<br>VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) θ<br>C, CAPACITANCE (pF)<br>f�, CURRENT-GAIN - BANDWIDTH PRODUCTT<br>**----- End of picture text -----**<br>


**Figure 11. Capacitance** 

**Figure 12. Current−Gain − Bandwidth Product** 

**www.onsemi.com** 

**4** 

**BC856B, BC857B, BC858A** 

**==> picture [489 x 365] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.0<br>0.7<br>D = 0.5<br>0.5<br>0.2<br>0.3<br>0.2<br>0.1 0.05 SINGLE PULSE Z � JC (t) = r(t) R � JC<br>0.070.1 SINGLE PULSE P (pk) RZ � � JA JC(t)  = 83.3= r(t) R ° C/W MAX � JA<br>0.05 t1 R � JA  = 200 ° C/W MAX<br>D CURVES APPLY FOR POWER<br>0.03 t2 PULSE TRAIN SHOWN<br>0.02 DUTY CYCLE, D = t1/t2 READ TIME AT t 1<br>TJ(pk) − TC = P(pk) R � JC(t)<br>0.01<br>0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0�k 2.0�k 5.0�k 10�k<br>t, TIME (ms)<br>Figure 13. Thermal Response<br>-200 The safe operating area curves indicate IC−VCE lim-<br>1 s 3 ms its of the transistor that must be observed for reliable oper-<br>-100 ation. Collector load lines for specific circuits must fall<br>-50 TA = 25°C TJ = 25°C below the limits indicated by the applicable curve.The data of Figure 14 is based upon TJ(pk) = 150°C; TC<br>or TA is variable depending upon conditions. Pulse curves<br>BC858 are valid for duty cycles to 10% provided TJ(pk) ≤ 150°C.<br>-10 BC857 TJ(pk) may be calculated from the data in Figure 13. At<br>BC856 high case or ambient temperatures, thermal limitations<br>-5.0 BONDING WIRE LIMIT will reduce the power that can be handled to values less<br>THERMAL LIMIT than the limitations imposed by the secondary breakdown.<br>SECOND BREAKDOWN LIMIT<br>-2.0<br>-1.0 -5.0 -10 -30 -45 -65 -100<br>VCE, COLLECTOR-EMITTER VOLTAGE (V)<br>r(t), TRANSIENT THERMAL<br>RESISTANCE (NORMALIZED)<br>IC, COLLECTOR CURRENT (mA)<br>**----- End of picture text -----**<br>


**Figure 14. Active Region Safe Operating Area** 

## **ORDERING INFORMATION** 

|**ORDERING INFORMATION**||||
|---|---|---|---|
|**Device**|**Marking**|**Package**|**Shipping**†|
|BC856BWT1G|3B|SC−70/SOT−323<br>(Pb−Free)|3,000 / Tape & Reel|
|SBC856BWT1G*||||
|BC857BWT1G|3F|SC−70/SOT−323<br>(Pb−Free)|3,000 / Tape & Reel|
|SBC857BWT1G*||||
|BC857CWT1G|3G|SC−70/SOT−323<br>(Pb−Free)|3,000 / Tape & Reel|
|NSVBC857CWT1G*||||
|BC858AWT1G|3J|SC−70/SOT−323<br>(Pb−Free)|3,000 / Tape & Reel|
|BC858BWT1G|3K|SC−70/SOT−323<br>(Pb−Free)|3,000 / Tape & Reel|



†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

*S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. 

**www.onsemi.com** 

**5** 

**BC856B, BC857B, BC858A** 

## **PACKAGE DIMENSIONS** 

**SC−70 (SOT−323)** CASE 419−04 ISSUE N 

**==> picture [462 x 345] intentionally omitted <==**

**----- Start of picture text -----**<br>
D NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.<br>e1 2. CONTROLLING DIMENSION: INCH.<br>MILLIMETERS INCHES<br>3 DIM MIN NOM MAX MIN NOM MAX<br>A 0.80 0.90 1.00 0.032 0.035 0.040<br>HE E A1 0.00 0.05 0.10 0.000 0.002 0.004<br>1 2 A2 0.70 REF 0.028 REF<br>. b 0.30 0.35 0.40 0.012 0.014 0.016<br>c 0.10 0.18 0.25 0.004 0.007 0.010<br>i a n ———=— D 1.80 2.10 2.20 0.071 0.083 0.087<br>b E 1.15 1.24 1.35 0.045 0.049 0.053<br>e 1.20 1.30 1.40 0.047 0.051 0.055<br>el e l e s So e1 0.65 BSC 0.026 BSC<br>L 0.20 0.38 0.56 0.008 0.015 0.022<br>H E 2.00 2.10 2.40 0.079 0.083 0.095<br>L o y ——<br>STYLE 3:<br>c<br>A A2 PIN 1. BASE<br>2. EMITTER<br>3. COLLECTOR<br>0.05 (0.002) L<br>A1<br>SOLDERING FOOTPRINT*<br>0.65<br>0.65 0.025<br>0.025<br>1.9<br>ab<br>0.075<br>0.9<br>0.035<br>0.7<br>LE<br>0.028<br>SCALE 10:1 mm<br>a _ inches<br>**----- End of picture text -----**<br>


*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

**ON Semiconductor** and          are registered trademarks of Semiconductor Components Industries, LLC (SCILLC).  SCILLC reserves the right to make changes without further notice to any products herein.  SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time.  All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.  SCILLC does not convey any license under its patent rights nor the rights of others.  SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur.  Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part.  SCILLC is an Equal Opportunity/Affirmative Action Employer.  This literature is subject to all applicable copyright laws and is not for resale in any manner. 

## **PUBLICATION ORDERING INFORMATION** 

**LITERATURE FULFILLMENT** : **N. American Technical Support** : 800−282−9855 Toll Free **ON Semiconductor Website** : **www.onsemi.com** Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 5163, Denver, Colorado 80217 USA **Europe, Middle East and Africa Technical Support: Order Literature** : http://www.onsemi.com/orderlit **Phone** : 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 **Fax** : 303−675−2176 or 800−344−3867 Toll Free USA/Canada **Japan Customer Focus Center** For additional information, please contact your local **Email** : orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative 

## **LITERATURE FULFILLMENT** : 

**www.onsemi.com** 

**6** 

**BC856BWT1/D**