BC856BM3T5G

## BC856BM3, NSVBC856BM3 

## General Purpose Transistor 

## **PNP Silicon** 

This transistor is designed for general purpose amplifier applications. It is housed in the SOT−723 which is designed for low power surface mount applications. 

## **http://onsemi.com** 

## **Features** 

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COLLECTOR<br>3<br>1<br>BASE<br>© ) 2<br>EMITTER<br>**----- End of picture text -----**<br>


- NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 

**MAXIMUM RATINGS MARKING Rating Symbol Value Unit DIAGRAM** Collector−Emitter Voltage VCEO −65 V 3 Collector−Base Voltage VCBO −80 V **SOT−723 CASE 631AA** 3B M Emitter−Base Voltage VEBO −5.0 V 2 **STYLE 1** 1 Collector Current − Continuous IC −100 mA ~~ee~~ **THERMAL CHARACTERISTICS** 3B = Specific Device Code M = Date Code **Characteristic Symbol Max Unit** Total Device Dissipation FR−5 Board PD 265 mW (Note 1) TA = 25 ° C **ORDERING INFORMATION** Derate above 25 ° C 2.1 mW/ ° C **Device Package Shipping**[†] ~~ee~~ Thermal Resistance, R ~~ee~~ JA 470 ° C/W BC856BM3T5G SOT−723 8000 / Tape & Junction to Ambient (Note 1) (Pb−Free) Reel Total Device Dissipation PD 640 mW NSVBC856BM3T5G SOT−723 8000 / Tape & Alumina Substrate (Note 2) (Pb−Free) Reel TA = 25 ° C Derate above 25 ° C 5.1 mW/ ° C †For information on tape and reel specifications, ~~5 EF~~ Thermal Resistance, R JA 195 ° C/W including part orientation and tape sizes, pleaserefer to our Tape and Reel Packaging Specifications Junction to Ambient (Note 2) Brochure, BRD8011/D. Junction and Storage TJ, TstgJ, Tstg, Tstgstg −55 to ° C Temperature Range +150 ~~ee~~ 

- Thermal Resistance, R JA 195 ° C/W Junction to Ambient (Note 2) 

- Junction and Storage TJ, TstgJ, Tstg, Tstgstg −55 to ° C Temperature Range +150 

- ~~ee~~ 

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 

1. FR−5 = 1.0 0.75 0.062 in. 

2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 

Publication Order Number: 

**1** 

© Semiconductor Components Industries, LLC, 2013 **September, 2013 − Rev. 2** 

**BC856BM3/D** 

## **BC856BM3, NSVBC856BM3** 

## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted)||||||
|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**||||||
|Collector−Emitter Breakdown Voltage<br>(IC= −10 mA)|V(BR)CEO|−65|−|−|V|
|Collector−Emitter Breakdown Voltage<br>(IC= −10�A, VEB= 0)|V(BR)CES|−80|−|−|V|
|Collector−Base Breakdown Voltage<br>(IC= −10�A)|V(BR)CBO|−80|−|−|V|
|Emitter−Base Breakdown Voltage<br>(IE= −1.0�A)|V(BR)EBO|−5.0|−|−|V|
|Collector Cutoff Current<br>(VCB= −30 V)<br>(VCB= −30 V, TA= 150°C)|ICBO|−<br>−|−<br>−|−15<br>−4.0|nA<br>�A|
|**ON CHARACTERISTICS**||||||
|DC Current Gain<br>(IC= −10�A, VCE= −5.0 V)<br>(IC= −2.0 mA, VCE= −5.0 V)|hFE|−<br>220|150<br>290|−<br>475|−|
|Collector−Emitter Saturation Voltage (IC= −10 mA, IB= −0.5 mA)<br>Collector−Emitter Saturation Voltage(IC= −100 mA, IB= −5.0 mA)|VCE(sat)|−<br>−|−<br>−|−0.3<br>−0.65|V|
|Base−Emitter Saturation Voltage (IC= −10 mA, IB= −0.5 mA)<br>Base−Emitter Saturation Voltage(IC= −100 mA, IB= −5.0 mA)|VBE(sat)|−<br>−|−0.7<br>−0.9|−<br>−|V|
|Base−Emitter Voltage (IC= −2.0 mA, VCE= −5.0 V)<br>Base−Emitter Voltage(IC= −10 mA, VCE= −5.0 V)|VBE(on)|−0.6<br>−|−<br>−|−0.75<br>−0.82|mV|
|**SMALL−SIGNAL CHARACTERISTICS**||||||
|Current−Gain − Bandwidth Product<br>(IC= −10 mA, VCE= −5.0 Vdc, f = 100 MHz)|fT|100|−|−|MHz|
|Output Capacitance<br>(VCB= −10 V, f = 1.0 MHz)|Cobo|−|−|4.5|pF|
|Noise Figure<br>(IC= −0.2 mA, VCE= −5.0 Vdc, RS= 2.0 k�, f = 1.0 kHz, BW = 200 Hz)|NF|−|−|10|dB|



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**2** 

**BC856BM3, NSVBC856BM3** 

## **TYPICAL CHARACTERISTICS** 

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-1.0<br>TJ = 25°C<br>V CE  = -5.0 V<br>T A  = 25°C -0.8<br>VBE(sat) @ IC/IB = 10<br>2.0<br>-0.6<br>VBE @ VCE = -5.0 V<br>1.0<br>-0.4<br>0.5<br>-0.2<br>0.2<br>VCE(sat) @ IC/IB = 10<br>0<br>-0.1 -0.2 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Figure 1. DC Current Gain Figure 2. “On” Voltage<br>-2.0 -1.0<br>-1.6 -1.4<br>IC = -20 mA -50 mA -100 mA -200 mA<br>-10 mA<br>-1.2 -1.8<br>�VB for VBE<br>-55°C to 125°C<br>-0.8 -2.2<br>-0.4 -2.6<br>TJ = 25°C<br>0 -3.0<br>-0.02 -0.05 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200<br>IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Figure 3. Collector Saturation Region Figure 4. Base−Emitter Temperature Coefficient<br>40<br>VCE = -5.0 V<br>TJ = 25°C 500<br>20<br>Cib<br>200<br>10 100<br>8.0<br>6.0 50<br>Cob<br>4.0<br>20<br>2.0<br>-0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -1.0 -10 -100<br>VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)<br>V, VOLTAGE (VOLTS)<br>hFE, DC CURRENT GAIN (NORMALIZED)<br>C)°<br>VB, TEMPERATURE COEFFICIENT (mV/<br>VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) θ<br>C, CAPACITANCE (pF)<br>f�, CURRENT-GAIN - BANDWIDTH PRODUCTT<br>**----- End of picture text -----**<br>


**Figure 5. Capacitance** 

**Figure 6. Current−Gain − Bandwidth Product** 

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**3** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

**SOT−723** CASE 631AA−01 ISSUE D 

DATE 10 AUG 2009 

**SCALE 4:1** 

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−X− NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ASME<br>D Y14.5M, 1994.<br>b1 A 2. CONTROLLING DIMENSION: MILLIMETERS.<br>3 −Y− 3. MAXIMUM LEAD THICKNESS INCLUDES LEADFINISH. MINIMUM LEAD THICKNESS IS THE MINIMUMFINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM<br>THICKNESS OF BASE MATERIAL.<br>E H E 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD<br>FLASH, PROTRUSIONS OR GATE BURRS.<br>1 2<br>Go 2X b tf MILLIMETERS<br>C DIM MIN NOM MAX<br>2X e 0.08 X Y A 0.45 0.50 0.55<br>SIDE VIEW b 0.15 0.21 0.27<br>TOP VIEW b1 0.25 0.31 0.37<br>C 0.07 0.12 0.17<br>3X L D 1.15 1.20 1.25<br>1 E 0.75 0.80 0.85<br>e 0.40 BSC<br>H E 1.15 1.20 1.25<br>L 0.29 REF<br>L2 0.15 0.20 0.25<br>3X L2 |CU E GENERIC<br>BOTTOM VIEW MARKING DIAGRAM*<br>STYLE 1: STYLE 2: STYLE 3: STYLE 4: STYLE 5:<br>PIN 1. BASE PIN 1. ANODE PIN 1. ANODE PIN 1. CATHODE PIN 1. GATE XX M<br> 2. EMITTER  2. N/C  2. ANODE  2. CATHODE  2. SOURCE<br> 3. COLLECTOR  3. CATHODE  3. CATHODE  3. ANODE  3. DRAIN<br>=<br>1<br>XX = Specific Device Code<br>RECOMMENDED<br>M = Date Code<br>**----- End of picture text -----**<br>


1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 

3. MAXIMUM LEAD THICKNESS INCLUDES LEADFINISH. MINIMUM LEAD THICKNESS IS THE MINIMUMFINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 

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RECOMMENDED<br>SOLDERING FOOTPRINT*<br>2X<br>0.40<br>2X 0.27<br>“Ar<br>PACKAGE<br>OUTLINE<br>SAE]<br>1.50<br>3X 0.52 aoe 0.36<br>DIMENSIONS: MILLIMETERS<br>**----- End of picture text -----**<br>


*This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G”, may or not be present. 

*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98AON12989D** Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. **DESCRIPTION: SOT−723 PAGE 1 OF 1** ~~SE~~ ON Semiconductor and          are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 

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