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BC856BDW1T3G
Bipolar Transistor Array, Dual PNP, 65 V, 100 mA
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: ONSEMI
- Product type: Bipolar Junction Transistor Arrays - BJT
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 6Pins
- Product Range: -
- Qualification: -
- Transistor Mounting: Surface Mount
- Transistor Polarity: Dual PNP
- Power Dissipation NPN: -
- Power Dissipation PNP: 380mW
- Transistor Case Style: SOT-363
- Transition Frequency NPN: -
- Transition Frequency PNP: 100MHz
- Operating Temperature Max: 150°C
- DC Current Gain hFE Min NPN: -
- DC Current Gain hFE Min PNP: 420hFE
- Continuous Collector Current NPN: -
- Continuous Collector Current PNP: 100mA
- Collector Emitter Voltage Max NPN: -
- Collector Emitter Voltage Max PNP: 65V
| Delivery and price | |
|---|---|
| Units per pack | 10000 |
| Price | 0.016 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**Share Feedback DATA SHEET** Your Opinion Matters **www.onsemi.com** ~~oe~~
## Dual General Purpose Transistors
## **PNP Duals**
## BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G, SBC857BDW1T1G Series, BC858CDW1T1G Series
These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is designed for low power surface mount applications.
## **Features**
- S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
- These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant*
## **MAXIMUM RATINGS**
|**MAXIMUM RATINGS**||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Collector-Emitter Voltage<br>BC856, SBC856<br>BC857, SBC857<br>BC858|VCEO|−65<br>−45<br>−30|V|
|Collector-Base Voltage<br>BC856, SBC856<br>BC857, SBC857<br>BC858|VCBO|−80<br>−50<br>−30|V|
|Emitter-Base Voltage|VEBO|−5.0|V|
|Collector Current −Continuous|IC|−100|mAdc|
|Collector Current − Peak|IC|−200|mAdc|
## **SOT-363/SC-88 CASE 419B STYLE 1**
**==> picture [126 x 236] intentionally omitted <==**
**----- Start of picture text -----**<br>
(3) (2) (1)<br>Q1 Q2<br>(4) (5) (6)<br>MARKING DIAGRAM<br>6<br>3x M<br>1<br>3x = Specific Device Code<br>x = B, F, G, or L<br>(See Ordering Information)<br>M = Date Code<br>= Pb-Free Package<br>**----- End of picture text -----**<br>
- (Note: Microdot may be in either location)
## **ORDERING INFORMATION**
See detailed ordering and shipping information on page 6 of this data sheet.
NOTE: Some of the devices on this data sheet have been **DISCONTINUED** . Please refer to the table on page 6.
## **THERMAL CHARACTERISTICS**
|**THERMAL CHARACTERISTICS**|~~ee~~|~~ee~~||
|---|---|---|---|
|**Characteristic**<br>~~ee~~|**Symbol**<br>~~ee~~<br>~~ee~~|**Max**<br>~~ee~~<br>~~ee~~|**Unit**<br>~~ee~~|
|Total Device Dissipation<br>Per Device<br>FR−5 Board (Note 1)<br>TA= 25C<br>Derate Above 25C<br>~~te~~|PD<br>~~ee~~<br>~~te~~|380<br>250<br>3.0<br>~~ee~~<br>~~te~~|mW<br>mW<br>mW/C<br>~~te~~|
|Thermal Resistance,<br>Junction-to-Ambient<br>~~ee~~|R JA<br>~~ee~~<br>~~ee~~|328<br>~~ee~~|C/W<br>~~ee~~|
|Junction and Storage Temperature<br>Range<br>~~ee~~|TJ, Tstg<br>~~ee~~<br>~~ee~~|−55 to +150<br>~~ee~~|C<br>~~ee~~|
## Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
1. FR-5 = 1.0 x 0.75 x 0.062 in
- *For additional information on our Pb-Free strategy and soldering details, please download the **onsemi** Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
Publication Order Number: **BC856BDW1T1/D**
**1**
Semiconductor Components Industries, LLC, 2013 **November, 2024 − Rev. 11**
## **BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G, SBC857BDW1T1G Series, BC858CDW1T1G Series**
**ELECTRICAL CHARACTERISTICS** (TA = 25 C unless otherwise noted)
|**ELECTRICAL CHARACTERISTICS**(TA = 25 C unless otherwise noted)A = 25 C unless otherwise noted)= 25 C unless otherwise noted)C unless otherwise noted)C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS**(TA = 25 C unless otherwise noted)A = 25 C unless otherwise noted)= 25 C unless otherwise noted)C unless otherwise noted)C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS**(TA = 25 C unless otherwise noted)A = 25 C unless otherwise noted)= 25 C unless otherwise noted)C unless otherwise noted)C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS**(TA = 25 C unless otherwise noted)A = 25 C unless otherwise noted)= 25 C unless otherwise noted)C unless otherwise noted)C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS**(TA = 25 C unless otherwise noted)A = 25 C unless otherwise noted)= 25 C unless otherwise noted)C unless otherwise noted)C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS**(TA = 25 C unless otherwise noted)A = 25 C unless otherwise noted)= 25 C unless otherwise noted)C unless otherwise noted)C unless otherwise noted)|
|---|---|---|---|---|---|
|**Characteristic**<br>**Symbol**<br>**Min**<br>**Typ**<br>**Max**<br>**Unit**<br>**OFF CHARACTERISTICS**<br>~~Po~~||||||
|Collector-Emitter Breakdown Voltage<br>(IC= −10 mA)||V(BR)CEO|||V|
|BC856, SBC856 Series||−65|−|−||
|BC857, SBC857 Series||−45|−|−||
|BC858 Series||−30|−|−||
|Collector-Emitter Breakdown Voltage||V(BR)CES|||V|
|(IC= −10 A, VEB= 0)||||||
|BC856, SBC856 Series||−80|−|−||
|BC857B, SBC857B Only||−50|−|−||
|BC858 Series||−30|−|−||
|Collector-Base Breakdown Voltage||V(BR)CBO|||V|
|(IC= −10 A)||||||
|BC856, SBC856 Series||−80|−|−||
|BC857, SBC857 Series||−50|−|−||
|BC858 Series||−30|−|−||
|Emitter-Base Breakdown Voltage||V(BR)EBO|||V|
|(IE= −1.0 A)||||||
|BC856, SBC856 Series||−5.0|−|−||
|BC857, SBC857 Series||−5.0|−|−||
|BC858 Series||−5.0|−|−||
|Collector Cutoff Current<br>(VCB= −30 V)<br>(VCB= −30 V, TA= 150C)<br>ICBO<br>−<br>−<br>−<br>−<br>−15<br>−4.0<br>nA<br>A<br>~~po~~||||||
|**ON CHARACTERISTICS**||||||
|DC Current Gain||hFE|||−|
|(IC= −10 A, VCE= −5.0 V)||||||
|BC856B, SBC856B, BC857B, SBC857B||−|150|−||
|BC857C, SBC857C, BC858C||−|270|−||
|(IC= −2.0 mA, VCE= −5.0 V)||||||
|BC856B, SBC856B, BC857B, SBC857B||220|290|475||
|BC857C, SBC857C, BC858C||420|520|800||
|Collector-Emitter Saturation Voltage<br>(IC= −10 mA, IB= −0.5 mA)<br>(IC= −100 mA, IB= −5.0 mA)<br>VCE(sat)<br>−<br>−<br>−<br>−<br>−0.3<br>−0.65<br>V<br>Base-Emitter Saturation Voltage<br>(IC= −10 mA, IB= −0.5 mA)<br>(IC= −100 mA, IB= −5.0 mA)<br>VBE(sat)<br>−<br>−<br>−0.7<br>−0.9<br>−<br>−<br>V<br>Base-Emitter On Voltage<br>(IC= −2.0 mA, VCE= −5.0 V)<br>(IC= −10 mA, VCE= −5.0 V)<br>VBE(on)<br>−0.6<br>−<br>−<br>−<br>−0.75<br>−0.82<br>V<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~po~~||||||
|**SMALL−SIGNAL CHARACTERISTICS**<br>Current-Gain − Bandwidth Product<br>(IC= −10 mA, VCE= −5.0 Vdc, f = 100 MHz)<br>fT<br>100<br>−<br>−<br>MHz<br>Output Capacitance<br>(VCB= −10 V, f = 1.0 MHz)<br>Cob<br>−<br>−<br>4.5<br>pF<br>Noise Figure<br>(IC= −0.2 mA, VCE= −5.0 Vdc, RS= 2.0 k<br>f = 1.0 kHz, BW = 200 Hz)<br>NF<br>−<br>−<br>10<br>dB<br>~~a~~<br>~~OO~~<br>~~a~~<br>~~OO~~<br>~~a~~||||||
|Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product|Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product|Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product||||
|performance may not be indicated by the Electrical Characteristics if operated under different conditions.||performance may not be indicated by the Electrical Characteristics if operated under different conditions.||||
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**BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G, SBC857BDW1T1G Series, BC858CDW1T1G Series**
## **TYPICAL CHARACTERISTICS − BC856/SBC856**
**==> picture [489 x 597] intentionally omitted <==**
**----- Start of picture text -----**<br>
-1.0<br>TJ = 25 C<br>V CE = -5.0 V<br> -0.8<br>T A = 25 C<br>2.0 | : aPECTINel CT VBE(sat) @ IC/IB = 10 ETT<br>eeTTT TTTll -0.6 ETTi pe TTT|<br>VBE @ VCE = -5.0 V<br>1.0<br>ST EE TUT perme<br>-0.4<br>0.5<br>CCC CCIE In -0.2 rT TTT TTATA<br>0.2<br>COCCI IIE ECCT TT or VCE(sat) @ IC/IB = 10 THI<br>OC it AT TET aH<br>CECE CCE Co 0 OOH<br>-0.1 -0.2 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Figure 1. DC Current Gain Figure 2. “On” Voltage<br>-2.0 -1.0<br>PLA PAT EET PEE EEE<br>-1.6 PT EAT -1.4 Va<br>IC = -20 mA -50 mA -100 mA -200 mA<br>-1.2 -10 mA HG then Ae n -1.8 LTT PT ETT TE a |<br>VB [ for V] BE<br>HAL || \Tenl TY -55 C to 125 C<br>-0.8 a MUAY aLEAL | A eEEA e -2.2 aesee SA HEEine<br>a a eeee<br>-0.4 PUTIN, ETN NEE -2.6 EI<br>TJ = 25 C<br>0 peeCESS I E -3.0 aPE TEU eeEEEEEee<br>-0.02 -0.05 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200<br>IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Figure 3. Collector Saturation Region Figure 4. Base-Emitter Temperature Coefficient<br>40<br>VCE = -5.0 V<br>PTT ETE TT TT TP TJ = 25 TTT) C 8 500 neneeenett eamtur nee<br>20 —<br>| Cib = ell<br>10 eT e PePT] e NUTUtKLEETlEET] A2 200100 ReACOCCI eam<br>8.0 NEE EHH FR<br>6.0 | to TEL LIN | HE fT EE ELT TTT a 50 aa eel<br>Cob<br>4.0 COCA N.C rer @ EER<br>20<br>COCCI<br>PE PCEPS S o T E +e<br>2.0<br>-0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -1.0 -10 -100<br>VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)<br>V, VOLTAGE (VOLTS)<br>hFE, DC CURRENT GAIN (NORMALIZED)<br>C) <br>VB, TEMPERATURE COEFFICIENT (mV/<br>VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) <br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br>
**Figure 5. Capacitance**
**Figure 6. Current-Gain − Bandwidth Product**
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## **TYPICAL CHARACTERISTICS − BC857/SBC857/BC858**
**==> picture [491 x 383] intentionally omitted <==**
**----- Start of picture text -----**<br>
2.0 -1.0<br>1.5 VCE = -10 V -0.9 TA = 25 C<br>TA = 25 C LAE ET -0.8 Lee VBE(sat) @ IC/IB = 10 eee<br>1.0 COMMIT) -0.7 L-CHyeaeaeer<br>PS En Bee aoe ae wlll<br>a -0.6 ae VBE(on) @ VCE = -10 V alll<br>0.7<br>PTTCT T ui TtCoPT rT TTTooTTT NG -0.5 Sanil ll<br>0.5 CC -0.4 nn<br>PLA EEE ETN -0.3 EE ee | |<br>-0.2<br>0.3 a |<br>0.2 PCIE CCITT) -0.10 ettbe [eT] VCE(sat) @ IC oot /IB = 10 LE LAI<br>-0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100<br>IC, COLLECTOR CURRENT (mAdc) IC, COLLECTOR CURRENT (mAdc)<br>Figure 7. Normalized DC Current Gain Figure 8. “Saturation” and “On” Voltages<br>-2.0 1.0<br>TA = 25 C -55 C to +125 C<br>-1.6 HHH ESET ICT 1.2 a HEATH EoTH<br>Se ia HHH te<br>PATEL UIE rail<br>1.6<br>-1.2 ET ' alll<br>PEE 2.0 COCA ea<br>EAN 7 eee<br>-0.8 IC = HLL IC = -50 mA \ IC = -200 mA N a eee| |<br>-10 mA<br>HTN \ N 2.4 PTT eePTETP|<br>IC = -100 mA<br>-0.4 rer IC = -20 mA WEN | a lll<br>2.8<br>UAW) SNUIECANHHEH ETTr<br>ERAN) SEE R CCCI<br>0 PLT | ENS TT | ll<br>-0.02 -0.1 -1.0 -10 -20 -0.2 -1.0 -10 -100<br>IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>V, VOLTAGE (VOLTS)<br>hFE, NORMALIZED DC CURRENT GAIN<br>C) <br>VCE, COLLECTOR-EMITTER VOLTAGE (V) VB, TEMPERATURE COEFFICIENT (mV/<br><br>**----- End of picture text -----**<br>
**Figure 9. Collector Saturation Region**
**Figure 10. Base-Emitter Temperature Coefficient**
**==> picture [487 x 173] intentionally omitted <==**
**----- Start of picture text -----**<br>
10 ___ 400<br>Sat Cib = 300 (i TT) [T] [ey] Ty T q<br>7.0<br>PPR TE TA = 25 C 3 200 Lo<br>5.0 RED Sel Pl & 150 [Perri VCE = -10 V<br>PITTNEE TA = 25 C<br>3.0 HE Cob TP 100 Ter TTT<br>80<br>60<br>2.0 ST PtEATN‘Gian1 Speed ce<br>40<br>PTTTT|) 2 Gee<br>as 30 LUI TT [Titi] tt y t<br>ST Pe Ge<br>1.0 (o) 20 Li TT TT EE<br>-0.4 -0.6 -1.0 -2.0 -4.0 -6.0 -10 -20 -30 -40 -0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 -50<br>VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc)<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br>
**Figure 11. Capacitances**
**Figure 12. Current-Gain − Bandwidth Product**
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**==> picture [489 x 383] intentionally omitted <==**
**----- Start of picture text -----**<br>
1.0<br>D = 0.5<br>a esOD |<br>oO 0.2<br>ne a te |<br>0.1 pr 0.1<br>0.05 = —- ee ee eae<br>===. III | LT TU}<br>Ter tt i i<br>0.02 Z JA (t) = r(t) R JA<br>PS P (pk) — R 9 JA = 328 C/W MAX 8 |<br>D CURVES APPLY FOR POWER<br>—ajeateatt i | | | | 8 I<br>0.01 90211)pF 0.01 t1 PULSE TRAIN SHOWN READ TIME AT t1 |H<br>Pr t2 TJ(pk) − TC = P(pk) R y JC(t) i<br>| 7 {| Tei tT TT TT DUTY CYCLE, D = t1/t2 |<br>0.001 / ee SINGLE PULSE aI<br>0 1.0 10 100 1.0k 10k 100 k 1.0M<br>t, TIME (ms)<br>Figure 13. Thermal Response<br>-200 STITT O TT The safe operating area curves indicate IC-VCE limits ofC-VCE limits of-VCE limits ofCE limits of limits of<br>1 s 3 ms the transistor that must be observed for reliable operation.<br>-100 SSN<br>a ee Collector load lines for specific circuits must fall below the<br>-50 Pp a eesa! TA = 25 TNS C i TJ = 25 O'S C LKTRINNINANEAT TTT limits indicated by the applicable curve.The data of Figure 14 is based upon TJ(pk) = 150 C; TC<br>or TA is variable depending upon conditions. Pulse curvesA is variable depending upon conditions. Pulse curves is variable depending upon conditions. Pulse curves<br>| BC558 ee es are valid for duty cycles to 10% provided TJ(pk)J(pk) 150 <br>| | TT ETT KHiLT<br>-10 J BC557 S ea TJ(pk) may be calculated from the data in Figure 13. At highJ(pk) may be calculated from the data in Figure 13. At high may be calculated from the data in Figure 13. At high<br>BC556 case or ambient temperatures, thermal limitations will<br>-5.0 BONDING WIRE LIMIT 2a enee i reduce the power that can be handled to values less than the<br>THERMAL LIMIT PT AE limitations imposed by the secondary breakdown.<br>SECOND BREAKDOWN LIMIT<br>-2.0 PHL<br>-1.0 -5.0 -10 -30 -45 -65 -100<br>VCE, COLLECTOR‐EMITTER VOLTAGE (V)<br>r(t), TRANSIENT THERMAL<br>RESISTANCE (NORMALIZED)<br>IC, COLLECTOR CURRENT (mA)<br>**----- End of picture text -----**<br>
The safe operating area curves indicate IC-VCE limits ofC-VCE limits of-VCE limits ofCE limits of limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the
The data of Figure 14 is based upon TJ(pk) = 150 J(pk) = 150 = 150 C; TC or TA is variable depending upon conditions. Pulse curvesA is variable depending upon conditions. Pulse curves is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk)J(pk) 150 C. TJ(pk) may be calculated from the data in Figure 13. At highJ(pk) may be calculated from the data in Figure 13. At high may be calculated from the data in Figure 13. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by the secondary breakdown.
**Figure 14. Active Region Safe Operating Area**
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**BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G, SBC857BDW1T1G Series, BC858CDW1T1G Series**
## **ORDERING INFORMATION**
|**ORDERING INFORMATION**||||
|---|---|---|---|
|**Device**|**Device Marking**|**Package**|**Shipping**†|
|BC856BDW1T1G|3B|SOT-363<br>(Pb-Free)|3,000 / Tape & Reel|
|SBC856BDW1T1G|3B|SOT-363<br>(Pb-Free)|3,000 / Tape & Reel|
|BC856BDW1T3G|3B|SOT-363<br>(Pb-Free)|10,000 / Tape & Reel|
|SBC856BDW1T3G|3B|SOT-363<br>(Pb-Free)|10,000 / Tape & Reel|
|BC857BDW1T1G|3F|SOT-363<br>(Pb-Free)|3,000 / Tape & Reel|
|SBC857BDW1T1G|3F|SOT-363<br>(Pb-Free)|3,000 / Tape & Reel|
|BC857CDW1T1G|3G|SOT-363<br>(Pb-Free)|3,000 / Tape & Reel|
|SBC857CDW1T1G|3G|SOT-363<br>(Pb-Free)|3,000 / Tape & Reel|
- †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
2. **DISCONTINUED:** This device is not recommended for new design. Please contact your **onsemi** representative for information. The most current information on this device may be available on ~~|~~ www.onsemi.com.
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MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS**
## **SC−88 2.00x1.25x0.90, 0.65P** CASE 419B−02 ISSUE Z
## DATE 18 APR 2024
**==> picture [164 x 154] intentionally omitted <==**
**----- Start of picture text -----**<br>
GENERIC<br>MARKING DIAGRAM*<br>6<br>io o<br>XXXM<br>1 UU U<br>XXX = Specific Device Code<br>M = Date Code*<br>: = Pb−Free Package<br>(Note: Microdot may be in either location)<br>*Date Code orientation and/or position may<br>vary depending upon manufacturing location.<br>**----- End of picture text -----**<br>
*This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ : ”, may or may not be present. Some products may not follow the Generic Marking.
## **STYLES ON PAGE 2**
Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
**==> picture [169 x 8] intentionally omitted <==**
**----- Start of picture text -----**<br>
DOCUMENT NUMBER: 98ASB42985B<br>**----- End of picture text -----**<br>
## **SC−88 2.00x1.25x0.90, 0.65P**
## **PAGE 1 OF 2**
##
## **DESCRIPTION:**
**onsemi** and are trademarks of Semiconductor Components Industries, LLC dba onsemi. **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others.
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Semiconductor Components Industries, LLC, 2019
## **SC−88 2.00x1.25x0.90, 0.65P** CASE 419B−02 ISSUE Z
## DATE 18 APR 2024
|STYLE 1:|STYLE 2:|STYLE 3:|STYLE 4:|STYLE 5:|STYLE 6:|
|---|---|---|---|---|---|
|PIN 1. EMITTER 2|CANCELLED|CANCELLED|PIN 1. CATHODE|PIN 1. ANODE|PIN 1. ANODE 2|
|2. BASE 2|||2. CATHODE|2. ANODE|2. N/C|
|3. COLLECTOR 1|||3. COLLECTOR|3. COLLECTOR|3. CATHODE 1|
|4. EMITTER 1|||4. EMITTER|4. EMITTER|4. ANODE 1|
|5. BASE 1|||5. BASE|5. BASE|5. N/C|
|6. COLLECTOR 2|||6. ANODE|6. CATHODE|6. CATHODE 2|
|STYLE 7:|STYLE 8:|STYLE 9:|STYLE 10:|STYLE 11:|STYLE 12:|
|PIN 1. SOURCE 2|CANCELLED|PIN 1. EMITTER 2|PIN 1. SOURCE 2|PIN 1. CATHODE 2|PIN 1. ANODE 2|
|2. DRAIN 2||2. EMITTER 1|2. SOURCE 1|2. CATHODE 2|2. ANODE 2|
|3. GATE 1||3. COLLECTOR 1|3. GATE 1|3. ANODE 1|3. CATHODE 1|
|4. SOURCE 1||4. BASE 1|4. DRAIN 1|4. CATHODE 1|4. ANODE 1|
|5. DRAIN 1||5. BASE 2|5. DRAIN 2|5. CATHODE 1|5. ANODE 1|
|6. GATE 2||6. COLLECTOR 2|6. GATE 2|6. ANODE 2|6. CATHODE 2|
|STYLE 13:|STYLE 14:|STYLE 15:|STYLE 16:|STYLE 17:|STYLE 18:|
|PIN 1. ANODE|PIN 1. VREF|PIN 1. ANODE 1|PIN 1. BASE 1|PIN 1. BASE 1|PIN 1. VIN1|
|2. N/C|2. GND|2. ANODE 2|2. EMITTER 2|2. EMITTER 1|2. VCC|
|3. COLLECTOR|3. GND|3. ANODE 3|3. COLLECTOR 2|3. COLLECTOR 2|3. VOUT2|
|4. EMITTER|4. IOUT|4. CATHODE 3|4. BASE 2|4. BASE 2|4. VIN2|
|5. BASE|5. VEN|5. CATHODE 2|5. EMITTER 1|5. EMITTER 2|5. GND|
|6. CATHODE|6. VCC|6. CATHODE 1|6. COLLECTOR 1|6. COLLECTOR 1|6. VOUT1|
|STYLE 19:|STYLE 20:|STYLE 21:|STYLE 22:|STYLE 23:|STYLE 24:|
|PIN 1. I OUT|PIN 1. COLLECTOR|PIN 1. ANODE 1|PIN 1. D1 (i)|PIN 1. Vn|PIN 1. CATHODE|
|2. GND|2. COLLECTOR|2. N/C|2. GND|2. CH1|2. ANODE|
|3. GND|3. BASE|3. ANODE 2|3. D2 (i)|3. Vp|3. CATHODE|
|4. V CC|4. EMITTER|4. CATHODE 2|4. D2 (c)|4. N/C|4. CATHODE|
|5. V EN|5. COLLECTOR|5. N/C|5. VBUS|5. CH2|5. CATHODE|
|6. V REF|6. COLLECTOR|6. CATHODE 1|6. D1 (c)|6. N/C|6. CATHODE|
|STYLE 25:|STYLE 26:|STYLE 27:|STYLE 28:|STYLE 29:|STYLE 30:|
|PIN 1. BASE 1|PIN 1. SOURCE 1|PIN 1. BASE 2|PIN 1. DRAIN|PIN 1. ANODE|PIN 1. SOURCE 1|
|2. CATHODE|2. GATE 1|2. BASE 1|2. DRAIN|2. ANODE|2. DRAIN 2|
|3. COLLECTOR 2|3. DRAIN 2|3. COLLECTOR 1|3. GATE|3. COLLECTOR|3. DRAIN 2|
|4. BASE 2|4. SOURCE 2|4. EMITTER 1|4. SOURCE|4. EMITTER|4. SOURCE 2|
|5. EMITTER|5. GATE 2|5. EMITTER 2|5. DRAIN|5. BASE/ANODE|5. GATE 1|
|6. COLLECTOR 1|6. DRAIN 1|6. COLLECTOR 2|6. DRAIN|6. CATHODE|6. DRAIN 1|
Note: Please refer to datasheet for style callout. If style type is not called out in the datasheet refer to the device datasheet pinout or pin assignment.
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Electronic versions are uncontrolled except when accessed directly from the Document Repository.<br>DOCUMENT NUMBER: 98ASB42985B Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.<br>DESCRIPTION: SC−88 2.00x1.25x0.90, 0.65P PAGE 2 OF 2<br>**----- End of picture text -----**<br>
**onsemi** and are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others.
**www.onsemi.com**
~~**2**~~
www.onsemi.com
Semiconductor Components Industries, LLC, 2019
**onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
## **ADDITIONAL INFORMATION**
**TECHNICAL PUBLICATIONS** : **ONLINE SUPPORT** : www.onsemi.com/support **Technical Library:** www.onsemi.com/design/resources/technical−documentation **For additional information, please contact your local Sales Representative at onsemi Website:** www.onsemi.com www.onsemi.com/support/sales
**==> picture [232 x 43] intentionally omitted <==**
Updated at June 10, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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