BC856BDW1T1G

Bipolar Transistor Array, General Purpose, Dual PNP, 65 V, 100 mA

⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.

Manufacturer: ONSEMI
Product type: Bipolar Junction Transistor Arrays - BJT
Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:65V; Power Dissipation Pd:380mW; DC Collector Current:100mA; DC Current Gain hFE:290hFE; Transistor Case Style:SOT-363
MSL: MSL 1 - Unlimited
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 6Pins
Product Range: BCxxx Series
Qualification: -
Transistor Mounting: Surface Mount
Transistor Polarity: Dual PNP
Power Dissipation NPN: -
Power Dissipation PNP: 380mW
Transistor Case Style: SOT-363
Transition Frequency NPN: -
Transition Frequency PNP: 100MHz
Operating Temperature Max: 150°C
DC Current Gain hFE Min NPN: -
DC Current Gain hFE Min PNP: 220hFE
Continuous Collector Current NPN: -
Continuous Collector Current PNP: 100mA
Collector Emitter Voltage Max NPN: -
Collector Emitter Voltage Max PNP: 65V

Delivery and price
Units per pack	9000
Price	0.035 €
Current stock	10+
Lead time	30 days

Datasheet

Updated at March 10, 2026