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BC856B,215
Bipolar (BJT) Single Transistor, General Purpose, PNP, 65 V, 100 mA, 250 mW, SOT-23, Surface Mount
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- Manufacturer: NEXPERIA
- Product type:
- Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-65V; Transition Frequency ft:100MHz; Power Dissipation Pd:250mW; DC Collector Current:-100mA; DC Current Gain hFE:220hFE; Transis
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: BC856
- Qualification: -
- Power Dissipation: 250mW
- Transistor Mounting: Surface Mount
- Transistor Polarity: PNP
- Transition Frequency: 100MHz
- Transistor Case Style: SOT-23
- DC Current Gain hFE Min: 220hFE
- Operating Temperature Max: 150°C
- Continuous Collector Current: 100mA
- Collector Emitter Voltage Max: 65V
| Delivery and price | |
|---|---|
| Units per pack | 9000 |
| Price | 0.02 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
_**DISCRETE SEMICONDUCTORS**_ **==> picture [359 x 51] intentionally omitted <==** **----- Start of picture text -----**<br> DATA SHEET<br>**----- End of picture text -----**<br> **==> picture [130 x 128] intentionally omitted <==** ## **BC856; BC857; BC858** PNP general purpose transistors Product data sheet 2004 Jan 16 Supersedes data of 2003 Apr 09 **==> picture [249 x 119] intentionally omitted <==** **NXP Semiconductors** **Product data sheet** ## **PNP general purpose transistors** ## **BC856; BC857; BC858** ## **FEATURES** - Low current (max. 100 mA) - Low voltage (max. 65 V). ## **APPLICATIONS** - General purpose switching and amplification. ## **DESCRIPTION** PNP transistor in a SOT23 plastic package. NPN complements: BC846, BC847 and BC848. ## **MARKING** |**MARKING**|| |---|---| |**TYPE NUMBER**|**MARKING CODE**(1)| |BC856|3D*| |BC856A|3A*| |BC856B|3B*| |BC857|3H*| |BC857A|3E*| |BC857B|3F*| |BC857C|3G*| |BC858B|3K*| ## **Note** 1. * = p: made in Hong Kong. - = t: made in Malaysia. - = W: made in China. ## **PINNING** |**PINNING**|| |---|---| |**PIN**|**DESCRIPTION**| |1|base| |2|emitter| |3|collector| **==> picture [242 x 288] intentionally omitted <==** **----- Start of picture text -----**<br> handbook, halfpage 3<br>3<br>1<br>2<br>1 2<br>Top view MAM256<br>Fig.1 Simplified outline (SOT23) and symbol.<br>**----- End of picture text -----**<br> ## **ORDERING INFORMATION** |**TYPE**<br>**NUMBER**|**PACKAGE**|**PACKAGE**|**PACKAGE**| |---|---|---|---| ||**NAME**|**DESCRIPTION**|**VERSION**| |BC856|−|plastic surface mountedpackage; 3 leads|SOT23| |BC857|−|plastic surface mountedpackage; 3 leads|SOT23| |BC858|−|plastic surface mountedpackage; 3 leads|SOT23| 2004 Jan 16 2 NXP Semiconductors Product data sheet ## PNP general purpose transistors ## BC856; BC857; BC858 ## **LIMITING VALUES** In accordance with the Absolute Maximum System (IEC 60134). |**SYMBOL**|**PARAMETER**|**CONDITIONS**|**MIN.**|**MAX.**|**UNIT**| |---|---|---|---|---|---| |VCBO|collector-base voltage<br>BC856<br>BC857<br>BC858|open emitter|−<br>−<br>−|−80<br>−50<br>−30|V<br>V<br>V| |VCEO|collector-emitter voltage<br>BC856<br>BC857<br>BC858|open base|−<br>−<br>−|−65<br>−45<br>−30|V<br>V<br>V| |VEBO|emitter-base voltage|open collector|−|−5|V| |IC|collector current (DC)||−|−100|mA| |ICM|peak collector current||−|−200|mA| |IBM|peak base current||−|−200|mA| |Ptot|totalpower dissipation|Tamb ≤25°C; note 1|−|250|mW| |Tstg|storage temperature||−65|+150|°C| |Tj|junction temperature||−|150|°C| |Tamb|operatingambient temperature||−65|+150|°C| ## **Note** 1. Transistor mounted on an FR4 printed-circuit board, standard footprint. ## **THERMAL CHARACTERISTICS** |**SYMBOL**|**PARAMETER**|**CONDITIONS**|**TYPICAL**|**UNIT**| |---|---|---|---|---| |Rth(j-a)|thermal resistance from junction to<br>ambient|in free air; note 1|500|K/W| ## **Note** 1. Transistor mounted on an FR4 printed-circuit board, standard footprint. 2004 Jan 16 3 NXP Semiconductors Product data sheet ## PNP general purpose transistors ## BC856; BC857; BC858 ## **CHARACTERISTICS** Tamb = 25 °C unless otherwise specified. |**SYMBOL**|**PARAMETER**|**CONDITIONS**|**MIN.**|**TYP.**|**MAX.**|**UNIT**| |---|---|---|---|---|---|---| |ICBO|collector-base cut-off current|VCB=−30 V; IE= 0|−|−1|−15|nA| |||VCB=−30 V; IE= 0;<br>Tj= 150°C|−|−|−4|μA| |IEBO|emitter-base cut-off current|VEB=−5 V; IC= 0|−|−|−100|nA| |hFE|DC current gain<br>BC856<br>BC857<br>BC856A; BC857A<br>BC856B; BC857B; BC858B<br>BC857C|IC=−2 mA; VCE=−5 V|125<br>125<br>125<br>220<br>420|−<br>−<br>−<br>−<br>−|475<br>800<br>250<br>475<br>800|| |VCEsat|collector-emitter saturation voltage|IC=−10 mA; IB=−0.5 mA|−|−75|−300|mV| |||IC=−100 mA; IB=−5 mA;<br>note 1|−|−250|−650|mV| |VBEsat|base-emitter saturation voltage|IC=−10 mA; IB=−0.5 mA|−|−700|−|mV| |||IC=−100 mA; IB=−5 mA;<br>note 1|−|−850|−|mV| |VBE|base-emitter voltage|IC=−2 mA; VCE=−5 V|−600|−650|−750|mV| |||IC=−10 mA; VCE=−5 V|−|−|−820|mV| |Cc|collector capacitance|VCB=−10 V; IE= Ie= 0;<br>f = 1 MHz|−|4.5|−|pF| |fT|transition frequency|VCE=−5 V; IC=−10 mA;<br>f = 100 MHz|100|−|−|MHz| |F|noise figure|IC=−200μA; VCE=−5 V;<br>RS= 2 kΩ; f = 1 kHz;<br>B = 200 Hz|−|2|10|dB| ## **Note** 1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02. 2004 Jan 16 4 NXP Semiconductors Product data sheet ## PNP general purpose transistors **==> picture [242 x 306] intentionally omitted <==** **----- Start of picture text -----**<br> MGT711<br>500<br>handbook, halfpage<br>hFE<br>400<br>(1)<br>300<br>200 (2)<br>(3)<br>100<br>0<br>− 10 [−] [2] − 10 [−] [1] − 1 − 10 − 10 [2] − 10 [3]<br>IC (mA)<br>BC857A; VCE = −5 V.<br>(1) Tamb = 150 °C.<br>(2) Tamb = 25 °C.<br>(3) Tamb = −55 °C.<br>Fig.2 DC current gain as a function of collector<br>current; typical values.<br>**----- End of picture text -----**<br> **==> picture [242 x 305] intentionally omitted <==** **----- Start of picture text -----**<br> MGT713<br>− 10 [4]<br>handbook, halfpage<br>VCEsat<br>(mV)<br>− 10 [3]<br>− 10 [2]<br>(1)<br>(3) (2)<br>− 10<br>− 10 [−] [1] − 1 − 10 − 10 [2] − 10 [3]<br>IC (mA)<br>BC857A; IC/IB = 20.<br>(1) Tamb = 150 °C.<br>(2) Tamb = 25 °C.<br>(3) Tamb = −55 °C.<br>Fig.4 Collector-emitter saturation voltage as a<br>function of collector current; typical values.<br>**----- End of picture text -----**<br> ## BC856; BC857; BC858 **==> picture [242 x 306] intentionally omitted <==** **----- Start of picture text -----**<br> MGT712<br>− 1200<br>handbook, halfpage VBE<br>(mV)<br>− 1000<br>(1)<br>− 800<br>(2)<br>− 600<br>(3)<br>− 400<br>− 200<br>0<br>− 10 [−] [2] − 10 [−] [1] − 1 − 10 − 10 [2] − 10 [3]<br>IC (mA)<br>BC857A; VCE = −5 V.<br>(1) Tamb = −55 °C.<br>(2) Tamb = 25 °C.<br>(3) Tamb = 150 °C.<br>Fig.3 Base-emitter voltage as a function of<br>collector current; typical values.<br>**----- End of picture text -----**<br> **==> picture [242 x 305] intentionally omitted <==** **----- Start of picture text -----**<br> MGT714<br>− 1200<br>handbook, halfpage VBEsat<br>(mV)<br>− 1000<br>(1)<br>− 800 (2)<br>(3)<br>− 600<br>− 400<br>− 200<br>0<br>− 10 [−] [1] − 1 − 10 − 10 [2] − 10 [3]<br>IC (mA)<br>BC857A; IC/IB = 20.<br>(1) Tamb = −55 °C.<br>(2) Tamb = 25 °C.<br>(3) Tamb = 150 °C.<br>Fig.5 Base-emitter saturation voltage as a<br>function of collector current; typical values.<br>**----- End of picture text -----**<br> 2004 Jan 16 5 NXP Semiconductors Product data sheet ## PNP general purpose transistors **==> picture [242 x 306] intentionally omitted <==** **----- Start of picture text -----**<br> MGT715<br>1000<br>handbook, halfpage<br>hFE<br>800<br>600<br>(1)<br>400<br>(2)<br>200 (3)<br>0<br>− 10 [−] [2] − 10 [−] [1] − 1 − 10 − 10 [2] − 10 [3]<br>IC (mA)<br>BC857B; VCE = −5 V.<br>(1) Tamb = 150 °C.<br>(2) Tamb = 25 °C.<br>(3) Tamb = −55 °C.<br>Fig.6 DC current gain as a function of collector<br>current; typical values.<br>**----- End of picture text -----**<br> **==> picture [242 x 305] intentionally omitted <==** **----- Start of picture text -----**<br> MGT717<br>− 10 [4]<br>handbook, halfpage<br>VCEsat<br>(mV)<br>− 10 [3]<br>− 10 [2]<br>(1)<br>(3) (2)<br>− 10<br>− 10 [−] [1] − 1 − 10 − 10 [2] − 10 [3]<br>IC (mA)<br>BC857B; IC/IB = 20.<br>(1) Tamb = 150 °C.<br>(2) Tamb = 25 °C.<br>(3) Tamb = −55 °C.<br>Fig.8 Collector-emitter saturation voltage as a<br>function of collector current; typical values.<br>**----- End of picture text -----**<br> ## BC856; BC857; BC858 **==> picture [242 x 306] intentionally omitted <==** **----- Start of picture text -----**<br> MGT716<br>− 1200<br>handbook, halfpage VBE<br>(mV)<br>− 1000<br>(1)<br>− 800<br>(2)<br>− 600<br>− 400 (3)<br>− 200<br>0<br>− 10 [−] [2] − 10 [−] [1] − 1 − 10 − 10 [2] − 10 [3]<br>IC (mA)<br>BC857B; VCE = −5 V.<br>(1) Tamb = −55 °C.<br>(2) Tamb = 25 °C.<br>(3) Tamb = 150 °C.<br>Fig.7 Base-emitter voltage as a function of<br>collector current; typical values.<br>**----- End of picture text -----**<br> **==> picture [242 x 305] intentionally omitted <==** **----- Start of picture text -----**<br> MGT718<br>− 1200<br>handbook, halfpage VBEsat<br>(mV)<br>− 1000<br>(1)<br>− 800<br>(2)<br>− 600<br>(3)<br>− 400<br>− 200<br>0<br>− 10 [−] [1] − 1 − 10 − 10 [2] − 10 [3]<br>IC (mA)<br>BC857B; IC/IB = 20.<br>(1) Tamb = −55 °C.<br>(2) Tamb = 25 °C.<br>(3) Tamb = 150 °C.<br>Fig.9 Base-emitter saturation voltage as a<br>function of collector current; typical values.<br>**----- End of picture text -----**<br> 2004 Jan 16 6 NXP Semiconductors Product data sheet ## PNP general purpose transistors **==> picture [242 x 306] intentionally omitted <==** **----- Start of picture text -----**<br> MGT719<br>1000<br>handbook, halfpage<br>hFE<br>(1)<br>800<br>600<br>(2)<br>400<br>(3)<br>200<br>0<br>− 10 [−] [2] − 10 [−] [1] − 1 − 10 − 10 [2] − 10 [3]<br>IC (mA)<br>BC857C; VCE = −5 V.<br>(1) Tamb = 150 °C.<br>(2) Tamb = 25 °C.<br>(3) Tamb = −55 °C.<br>Fig.10 DC current gain as a function of collector<br>current; typical values.<br>**----- End of picture text -----**<br> **==> picture [242 x 305] intentionally omitted <==** **----- Start of picture text -----**<br> MGT721<br>− 10 [4]<br>handbook, halfpage<br>VCEsat<br>(mV)<br>− 10 [3]<br>− 10 [2]<br>(1)<br>(3) (2)<br>− 10<br>− 10 [−] [1] − 1 − 10 − 10 [2] − 10 [3]<br>IC (mA)<br>BC857C; IC/IB = 20.<br>(1) Tamb = 150 °C.<br>(2) Tamb = 25 °C.<br>(3) Tamb = −55 °C.<br>Fig.12 Collector-emitter saturation voltage as a<br>function of collector current; typical values.<br>**----- End of picture text -----**<br> ## BC856; BC857; BC858 **==> picture [242 x 306] intentionally omitted <==** **----- Start of picture text -----**<br> MGT720<br>− 1200<br>handbook, halfpage VBE<br>(mV)<br>− 1000<br>− 800 (1)<br>(2)<br>− 600<br>− 400 (3)<br>− 200<br>0<br>− 10 [−] [1] − 1 − 10 − 10 [2] − 10 [3]<br>IC (mA)<br>BC857C; VCE = −5 V.<br>(1) Tamb = −55 °C.<br>(2) Tamb = 25 °C.<br>(3) Tamb = 150 °C.<br>Fig.11 Base-emitter voltage as a function of<br>collector current; typical values.<br>**----- End of picture text -----**<br> **==> picture [242 x 305] intentionally omitted <==** **----- Start of picture text -----**<br> MGT722<br>− 1200<br>handbook, halfpage VBEsat<br>(mV)<br>− 1000<br>(1)<br>− 800<br>(2)<br>− 600<br>(3)<br>− 400<br>− 200<br>0<br>− 10 [−] [1] − 1 − 10 − 10 [2] − 10 [3]<br>IC (mA)<br>BC857C; IC/IB = 20.<br>(1) Tamb = −55 °C.<br>(2) Tamb = 25 °C.<br>(3) Tamb = 150 °C.<br>Fig.13 Base-emitter saturation voltage as a<br>function of collector current; typical values.<br>**----- End of picture text -----**<br> 2004 Jan 16 7 NXP Semiconductors Product data sheet ## PNP general purpose transistors ## BC856; BC857; BC858 ## **PACKAGE OUTLINE** **==> picture [481 x 588] intentionally omitted <==** **----- Start of picture text -----**<br> Plastic surface-mounted package; 3 leads SOT23<br>D B E A X<br>HE v M A<br>3<br>Q<br>A<br>A1<br>1 2 c<br>e1 bp w M B Lp<br>e<br>detail X<br>0 1 2 mm<br>scale<br>DIMENSIONS (mm are the original dimensions)<br>UNIT A max.A1 bp c D E e e1 HE Lp Q v w<br>1.1 0.48 0.15 3.0 1.4 2.5 0.45 0.55<br>mm 0.1 1.9 0.95 0.2 0.1<br>0.9 0.38 0.09 2.8 1.2 2.1 0.15 0.45<br>OUTLINE REFERENCES EUROPEAN<br>ISSUE DATE<br>VERSION IEC JEDEC JEITA PROJECTION<br>04-11-04<br> SOT23 TO-236AB<br>06-03-16<br>**----- End of picture text -----**<br> 2004 Jan 16 8 NXP Semiconductors Product data sheet ## PNP general purpose transistors ## BC856; BC857; BC858 ## **DATA SHEET STATUS** |**DATA SHEET STATUS**||| |---|---|---| |**DOCUMENT**<br>**STATUS**(1)|**PRODUCT**<br>**STATUS**(2)|**DEFINITION**| |Objective data sheet|Development|This document contains data from the objective specification for product<br>development.| |Preliminarydata sheet|Qualification|This document contains data from thepreliminaryspecification.| |Product data sheet|Production|This document contains theproduct specification.| ## **Notes** 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. ## **DISCLAIMERS** **General** ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. **Right to make changes** ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. **Suitability for use** ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. ⎯ **Applications** Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. **Terms and conditions of sale** ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. **No offer to sell or license** ⎯ Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. ⎯ **Export control** This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. **Quick reference data** ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. ⎯ **Limiting values** Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to 2004 Jan 16 9 ## _**NXP Semiconductors**_ ## **Customer notification** This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. ## **Contact information** For additional information please visit: **http://www.nxp.com** For sales offices addresses send e-mail to: **salesaddresses@nxp.com** ## © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands **==> picture [178 x 143] intentionally omitted <==** Date of release: 2004 Jan 16 R75/06/pp10 Document order number: 9397 750 12397
Updated at June 1, 2026
Nexperia is a dedicated global leader in discretes, logic, and MOSFET devices. Built on over half a century of semiconductor expertise and operating independently since 2017, the company produces consistently reliable components at an exceptional volume of 85 billion units annually. With its own manufacturing facilities, Nexperia delivers industry-leading small packages that combine power and thermal efficiency with best-in-class quality, meeting the rigorous standards of the automotive sector. Our extensive Nexperia portfolio is heavily focused on discrete semiconductors, providing engineers with a robust selection of core building blocks. This includes a comprehensive range of diodes and rectifiers, featuring a vast selection of Zener single diodes and Schottky diodes designed for precise voltage regulation and efficient power routing. Additionally, we offer an expansive array of bipolar transistors and single MOSFETs tailored for reliable switching and amplification in demanding applications. Beyond these primary offerings, the lineup extends into specialized circuit protection and passive components. This includes transient voltage suppressor (TVS) diodes, Zener array diodes, and small signal diodes, alongside dual MOSFETs and fast recovery rectifiers. For comprehensive design needs, the selection also encompasses integrated passive filters, common mode chokes, and precision timers and oscillators, ensuring a complete solution for high-performance electronic systems.
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