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BC856AW,115
Bipolar (BJT) Single Transistor, PNP, 65 V, 100 mA, 200 mW, SC-70, Surface Mount
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- Manufacturer: NEXPERIA
- Product type:
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: -
- Qualification: -
- Power Dissipation: 200mW
- Transistor Mounting: Surface Mount
- Transistor Polarity: PNP
- Transition Frequency: 100MHz
- Transistor Case Style: SC-70
- DC Current Gain hFE Min: 125hFE
- Operating Temperature Max: 150°C
- Continuous Collector Current: 100mA
- Collector Emitter Voltage Max: 65V
| Delivery and price | |
|---|---|
| Units per pack | 1500 |
| Price | 0.037 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
## **DISCRETE SEMICONDUCTORS** ## **DATA SHEET** **==> picture [208 x 121] intentionally omitted <==** **----- Start of picture text -----**<br> book, halfpage<br>M3D102<br>**----- End of picture text -----**<br> ## **BC856W; BC857W; BC858W** PNP general purpose transistors Supersedes data of 1999 Apr 12 2002 Feb 04 **Philips Semiconductors** ## **PNP general purpose transistors** ## **FEATURES** - Low current (max. 100 mA) - Low voltage (max. 65 V). ## **APPLICATIONS** ## **BC856W; BC857W; BC858W** ## **PINNING** |**PINNING**|| |---|---| |**PIN**|**DESCRIPTION**| |1|base| |2|emitter| |3|collector| - General purpose switching and amplification. ## **DESCRIPTION** PNP transistor in a SOT323 plastic package. NPN complements: BC846W, BC847W and BC848W. ## **MARKING** |**MARKING**|| |---|---| |**TYPE NUMBER**|**MARKING CODE**(1)| |BC856W|3D*| |BC856AW|3A*| |BC856BW|3B*| |BC857W|3H*| |BC857AW|3E*| |BC857BW|3F*| |BC857CW|3G*| |BC858W|3M*| **==> picture [242 x 115] intentionally omitted <==** **----- Start of picture text -----**<br> handbook, halfpage 3<br>3<br>1<br>2<br>1 2<br>Top view MAM048<br>**----- End of picture text -----**<br> Fig.1 Simplified outline (SOT323; SC70) and symbol. ## **Note** 1. * = -: made in Hong Kong. - = t: made in Malaysia. 2002 Feb 04 2 Philips Semiconductors ## PNP general purpose transistors ## BC856W; BC857W; BC858W ## **LIMITING VALUES** In accordance with the Absolute Maximum System (IEC 60134). |**SYMBOL**|**PARAMETER**|**CONDITIONS**|**MIN.**|**MAX.**|**UNIT**| |---|---|---|---|---|---| |VCBO|collector-base voltage<br>BC856W<br>BC857W<br>BC858W|open emitter|−<br>−<br>−|−80<br>−50<br>−30|V<br>V<br>V| |VCEO|collector-emitter voltage<br>BC856W<br>BC857W<br>BC858W|open base|−<br>−<br>−|−65<br>−45<br>−30|V<br>V<br>V| |VEBO|emitter-base voltage|open collector|−|−5|V| |IC|collector current (DC)||−|−100|mA| |ICM|peak collector current||−|−200|mA| |IBM|peak base current||−|−200|mA| |Ptot|total power dissipation|Tamb≤25°C; note 1|−|200|mW| |Tstg|storage temperature||−65|+150|°C| |Tj|junction temperature||−|150|°C| |Tamb|operating ambient temperature||−65|+150|°C| ## **Note** 1. Refer to SOT323 standard mounting conditions. ## **THERMAL CHARACTERISTICS** |**SYMBOL**|**PARAMETER**|**CONDITIONS**|**VALUE**|**UNIT**| |---|---|---|---|---| |Rth j-a|thermal resistance from junction to<br>ambient|in free air; note 1|625|K/W| ## **Note** 1. Refer to SOT323 standard mounting conditions. 2002 Feb 04 3 Philips Semiconductors ## PNP general purpose transistors ## BC856W; BC857W; BC858W ## **CHARACTERISTICS** Tamb = 25 ° |**SYMBOL**|**PARAMETER**|**CONDITIONS**|**MIN.**|**TYP.**|**MAX.**|**UNIT**| |---|---|---|---|---|---|---| |ICBO|collector-base cut-off current|VCB=−30 V; IE= 0|−|−1|−15|nA| |||VCB=−30 V; IE= 0;<br>Tj= 150°C|−|−|−4|µA| |IEBO|emitter-base cut-off current|VEB=−5 V; IC= 0|−|−|−100|nA| |hFE|DC current gain<br>BC856W<br>BC857W; BC858W<br>BC856AW; BC857AW<br>BC856BW; BC857BW<br>BC857CW|IC=−2 mA; VCE=−5 V|125<br>125<br>125<br>220<br>420|−<br>−<br>−<br>−<br>−|475<br>800<br>250<br>475<br>800|| |VCEsat|collector-emitter saturation voltage|IC=−10 mA; IB=−0.5 mA|−|−75|−300|mV| |||IC=−100 mA; IB=−5 mA;<br>note 1|−|−250|−600|mV| |VBEsat|base-emitter saturation voltage|IC=−10 mA; IB=−0.5 mA|−|−700|−|mV| |||IC=−100 mA; IB=−5 mA;<br>note 1|−|−850|−|mV| |VBE|base-emitter voltage|IC=−2 mA; VCE=−5 V|−600|−650|−750|mV| |||IC=−10 mA; VCE=−5 V|−|−|−820|mV| |Cc|collector capacitance|VCB=−10 V; IE= Ie= 0;<br>f = 1 MHz|−|−|3|pF| |Ce|emitter capacitance|VEB=−0.5 V; IC= Ic= 0;<br>f = 1 MHz|−|−|12|pF| |fT|transition frequency|VCE=−5 V; IC=−10 mA;<br>f = 100 MHz|100|−|−|MHz| |F|noise fgure|IC=−200µA; VCE=−5 V;<br>RS= 2 kΩ; f = 1 kHz;<br>B = 200 Hz|−|−|10|dB| ## **Note** 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 2002 Feb 04 4 Philips Semiconductors ## PNP general purpose transistors **==> picture [242 x 189] intentionally omitted <==** **----- Start of picture text -----**<br> MGT711<br>500<br>handbook, halfpage<br>hFE<br>400<br>(1)<br>300<br>200 (2)<br>(3)<br>100<br>0<br>−10 [−][2] −10 [−][1] −1 −10 −10 [2] −10 [3]<br>IC (mA)<br>**----- End of picture text -----**<br> **==> picture [75 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> BC857AW; VCE = −5 V.<br>**----- End of picture text -----**<br> - (1) Tamb = 150 °C. - (2) Tamb = 25 °C. - (3) Tamb = −55 °C. Fig.2 DC current gain as a function of collector current; typical values. **==> picture [242 x 189] intentionally omitted <==** **----- Start of picture text -----**<br> MGT713<br>−10 [4]<br>handbook, halfpage<br>VCEsat<br>(mV)<br>−10 [3]<br>−10 [2]<br>(1)<br>(3) (2)<br>−10<br>−10 [−][1] −1 −10 −10 [2] −10 [3]<br>IC (mA)<br>**----- End of picture text -----**<br> ## **BC857AW;** IC/IB = 20. - (1) Tamb = 150 °C. - (2) Tamb = 25 °C. - (3) Tamb = −55 °C. Fig.4 Collector-emitter saturation voltage as a function of collector current; typical values. ## BC856W; BC857W; BC858W **==> picture [242 x 189] intentionally omitted <==** **----- Start of picture text -----**<br> MGT712<br>−1200<br>handbook, halfpageVBE<br>(mV)<br>−1000<br>(1)<br>−800<br>(2)<br>−600<br>(3)<br>−400<br>−200<br>0<br>−10 [−][2] −10 [−][1] −1 −10 −10 [2] −10 [3]<br>IC (mA)<br>**----- End of picture text -----**<br> ## **BC857AW;** VCE = −5 V. (1) Tamb = −55 °C. - (2) Tamb = 25 °C. - (3) Tamb = 150 °C. Fig.3 Base-emitter voltage as a function of collector current; typical values. **==> picture [241 x 189] intentionally omitted <==** **----- Start of picture text -----**<br> MGT714<br>−1200<br>handbook, halfpageVBEsat<br>(mV)<br>−1000<br>(1)<br>−800 (2)<br>(3)<br>−600<br>−400<br>−200<br>0<br>−10 [−][1] −1 −10 −10 [2] −10 [3]<br>IC (mA)<br>**----- End of picture text -----**<br> ## **BC857AW;** IC/IB = 20. - (1) Tamb = −55 °C. - (2) Tamb = 25 °C. - (3) Tamb = 150 °C. Fig.5 Base-emitter saturation voltage as a function of collector current; typical values. 2002 Feb 04 5 Philips Semiconductors ## PNP general purpose transistors **==> picture [242 x 189] intentionally omitted <==** **----- Start of picture text -----**<br> MGT715<br>1000<br>handbook, halfpage<br>hFE<br>800<br>600<br>(1)<br>400<br>(2)<br>200 (3)<br>0<br>−10 [−][2] −10 [−][1] −1 −10 −10 [2] −10 [3]<br>IC (mA)<br>**----- End of picture text -----**<br> ## **BC857BW;** VCE = −5 V. - (1) Tamb = 150 °C. - (2) Tamb = 25 °C. - (3) Tamb = −55 °C. Fig.6 DC current gain as a function of collector current; typical values. **==> picture [242 x 189] intentionally omitted <==** **----- Start of picture text -----**<br> MGT717<br>−10 [4]<br>handbook, halfpage<br>VCEsat<br>(mV)<br>−10 [3]<br>−10 [2]<br>(1)<br>(3) (2)<br>−10<br>−10 [−][1] −1 −10 −10 [2] −10 [3]<br>IC (mA)<br>**----- End of picture text -----**<br> ## **BC857BW;** IC/IB = 20. - (1) Tamb = 150 °C. - (2) Tamb = 25 °C. - (3) Tamb = −55 °C. Fig.8 Collector-emitter saturation voltage as a function of collector current; typical values. ## BC856W; BC857W; BC858W **==> picture [241 x 189] intentionally omitted <==** **----- Start of picture text -----**<br> MGT716<br>−1200<br>handbook, halfpageVBE<br>(mV)<br>−1000<br>(1)<br>−800<br>(2)<br>−600<br>−400 (3)<br>−200<br>0<br>−10 [−][2] −10 [−][1] −1 −10 −10 [2] −10 [3]<br>IC (mA)<br>**----- End of picture text -----**<br> ## **BC857BW;** VCE = −5 V. (1) Tamb = −55 °C. - (2) Tamb = 25 °C. - (3) Tamb = 150 °C. Fig.7 Base-emitter voltage as a function of collector current; typical values. **==> picture [242 x 189] intentionally omitted <==** **----- Start of picture text -----**<br> MGT718<br>−1200<br>handbook, halfpageVBEsat<br>(mV)<br>−1000<br>(1)<br>−800<br>(2)<br>−600<br>(3)<br>−400<br>−200<br>0<br>−10 [−][1] −1 −10 −10 [2] −10 [3]<br>IC (mA)<br>**----- End of picture text -----**<br> ## **BC857BW;** IC/IB = 20. - (1) Tamb = −55 °C. - (2) Tamb = 25 °C. - (3) Tamb = 150 °C. Fig.9 Base-emitter saturation voltage as a function of collector current; typical values. 2002 Feb 04 6 Philips Semiconductors ## PNP general purpose transistors **==> picture [242 x 189] intentionally omitted <==** **----- Start of picture text -----**<br> MGT719<br>1000<br>handbook, halfpage<br>hFE<br>(1)<br>800<br>600<br>(2)<br>400<br>(3)<br>200<br>0<br>−10 [−][2] −10 [−][1] −1 −10 −10 [2] −10 [3]<br>IC (mA)<br>**----- End of picture text -----**<br> **==> picture [75 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> BC857CW; VCE = −5 V.<br>**----- End of picture text -----**<br> - (1) Tamb = 150 °C. - (2) Tamb = 25 °C. - (3) Tamb = −55 °C. Fig.10 DC current gain as a function of collector current; typical values. **==> picture [242 x 188] intentionally omitted <==** **----- Start of picture text -----**<br> MGT721<br>−10 [4]<br>handbook, halfpage<br>VCEsat<br>(mV)<br>−10 [3]<br>−10 [2]<br>(1)<br>(3) (2)<br>−10<br>−10 [−][1] −1 −10 −10 [2] −10 [3]<br>IC (mA)<br>**----- End of picture text -----**<br> **==> picture [70 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> BC857CW; IC/IB = 20.<br>**----- End of picture text -----**<br> - (1) Tamb = 150 °C. - (2) Tamb = 25 °C. - (3) Tamb = −55 °C. Fig.12 Collector-emitter saturation voltage as a function of collector current; typical values. ## BC856W; BC857W; BC858W **==> picture [241 x 189] intentionally omitted <==** **----- Start of picture text -----**<br> MGT720<br>−1200<br>handbook, halfpageVBE<br>(mV)<br>−1000<br>−800 (1)<br>(2)<br>−600<br>−400 (3)<br>−200<br>0<br>−10 [−][1] −1 −10 −10 [2] −10 [3]<br>IC (mA)<br>**----- End of picture text -----**<br> **BC857CW;** VCE = −5 V. (1) Tamb = −55 °C. - (2) Tamb = 25 °C. - (3) Tamb = 150 °C. Fig.11 Base-emitter voltage as a function of collector current; typical values. **==> picture [242 x 188] intentionally omitted <==** **----- Start of picture text -----**<br> MGT722<br>−1200<br>handbook, halfpageVBEsat<br>(mV)<br>−1000<br>(1)<br>−800<br>(2)<br>−600<br>(3)<br>−400<br>−200<br>0<br>−10 [−][1] −1 −10 −10 [2] −10 [3]<br>IC (mA)<br>**----- End of picture text -----**<br> **==> picture [71 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> BC857CW; IC/IB = 20.<br>**----- End of picture text -----**<br> - (1) Tamb = −55 °C. - (2) Tamb = 25 °C. - (3) Tamb = 150 °C. Fig.13 Base-emitter saturation voltage as a function of collector current; typical values. 2002 Feb 04 7 Philips Semiconductors ## PNP general purpose transistors ## BC856W; BC857W; BC858W ## **PACKAGE OUTLINE** ## **Plastic surface mounted package; 3 leads** **==> picture [37 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> SOT323<br>**----- End of picture text -----**<br> **==> picture [495 x 590] intentionally omitted <==** **----- Start of picture text -----**<br> D B E A<br>X<br>y HE v M A<br>3<br>Q<br>A<br>A1<br>c<br>1 2<br>e1 bp w M B Lp<br>e detail X<br>0 1 2 mm<br>scale<br>DIMENSIONS (mm are the original dimensions)<br>UNIT A maxA1 bp c D E e e1 HE Lp Q v w<br>1.1 0.4 0.25 2.2 1.35 2.2 0.45 0.23<br>mm 0.1 1.3 0.65 0.2 0.2<br>0.8 0.3 0.10 1.8 1.15 2.0 0.15 0.13<br>OUTLINE REFERENCES EUROPEAN<br>ISSUE DATE<br>VERSION IEC JEDEC EIAJ PROJECTION<br> SOT323 SC-70 97-02-28<br>**----- End of picture text -----**<br> 2002 Feb 04 8 Philips Semiconductors ## PNP general purpose transistors ## BC856W; BC857W; BC858W ## **DATA SHEET STATUS** |**DATA SHEET STATUS**||| |---|---|---| |**DATA SHEET STATUS**(1)|**PRODUCT**<br>**STATUS**(2)|**DEFINITIONS**| |Objective data|Development|This data sheet contains data from the objective specifcation for product<br>development. Philips Semiconductors reserves the right to change the<br>specifcation in any manner without notice.| |Preliminary data|Qualifcation|This data sheet contains data from the preliminary specifcation.<br>Supplementary data will be published at a later date. Philips<br>Semiconductors reserves the right to change the specifcation without<br>notice, in order to improve the design and supply the best possible<br>product.| |Product data|Production|This data sheet contains data from the product specifcation. Philips<br>Semiconductors reserves the right to make changes at any time in order<br>to improve the design, manufacturing and supply. Changes will be<br>communicated according to the Customer Product/Process Change<br>Notifcation (CPCN) procedure SNW-SQ-650A.| ## **Notes** 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. ## **DEFINITIONS** **Short-form specification** The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. **Limiting values definition** Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. **Application information** Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. ## **DISCLAIMERS** **Life support applications** These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. **Right to make changes** Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 2002 Feb 04 9 Philips Semiconductors PNP general purpose transistors BC856W; BC857W; BC858W ## **NOTES** 2002 Feb 04 10 Philips Semiconductors PNP general purpose transistors BC856W; BC857W; BC858W ## **NOTES** 2002 Feb 04 11 ## **Philips Semiconductors – a worldwide company** ## **Contact information** For additional information please visit **http://www.semiconductors.philips.com** . Fax: **+31 40 27 24825** For sales offices addresses send e-mail to: **sales.addresses@www.semiconductors.philips.com** . © Koninklijke Philips Electronics N.V. 2002 SCA74 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. **==> picture [214 x 95] intentionally omitted <==** Printed in The Netherlands 613514/04/pp12 Date of release: 2002 Feb 04 Document order number: 9397 750 09168
Updated at June 1, 2026
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