BC848CDW1T1G

Bipolar Transistor Array, Dual NPN, 30 V, 100 mA, 380 mW

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Manufacturer: ONSEMI
Product type: Bipolar Junction Transistor Arrays - BJT
Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:30V; Power Dissipation Pd:380mW; DC Collector Current:100mA; DC Current Gain hFE:420hFE; Transistor Case Style:SOT-3
MSL: MSL 1 - Unlimited
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 3Pins
Product Range: -
Qualification: -
Transistor Mounting: Surface Mount
Transistor Polarity: Dual NPN
Power Dissipation NPN: 380mW
Power Dissipation PNP: -
Transistor Case Style: SOT-363
Transition Frequency NPN: 100MHz
Transition Frequency PNP: -
Operating Temperature Max: 150°C
DC Current Gain hFE Min NPN: 420hFE
DC Current Gain hFE Min PNP: -
Continuous Collector Current NPN: 100mA
Continuous Collector Current PNP: -
Collector Emitter Voltage Max NPN: 30V
Collector Emitter Voltage Max PNP: -

Delivery and price
Units per pack	5000
Price	0.036 €
Current stock	1000+
Lead time	7 days

Datasheet

Updated at March 10, 2026