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This product is RoHS compilant

BC848CDW1T1G

Bipolar Transistor Array, Dual NPN, 30 V, 100 mA, 380 mW, 420 hFE, SOT-363

  • Manufacturer: ONSEMI
  • Product type: Bipolar Junction Transistor Arrays - BJT
  • Product variants: No other variants available. No other names.
  • No. of Pins: 3Pins
  • DC Current Gain hFE: 420hFE
  • Transistor Mounting: Surface Mount
  • Transistor Polarity: Dual NPN
  • DC Collector Current: 100mA
  • Power Dissipation Pd: 380mW
  • Power Dissipation NPN: 380mW
  • Transistor Case Style: SOT-363
  • Transition Frequency NPN: 100MHz
  • Operating Temperature Max: 150°C
  • DC Current Gain hFE Min NPN: 420hFE
  • Continuous Collector Current NPN: 100mA
  • Collector Emitter Voltage Max NPN: 30V
  • Collector Emitter Voltage V(br)ceo: 30V
Delivery and price
Units per pack 45000
Price 0.028 €
Current stock 23225
Lead time 7 days