BC848BWT106

BC848BW / BC848B 

Transistors 

## **NPN General Purpose Transistor** 

## **BC848BW / BC848B** 

## � **Features** 

- 1) BVCEO minimum is 30V (IC=1mA) 

- 2) Complements the BC858B / BC858BW. 

## � **External dimensions** (Unit : mm) 

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BC848BW<br>SOT-323<br>2.0 ± 0.2<br>1.3 ± 0.1 0.9 ± 0.1<br>0.65 0.65 0.2 0.7 ± 0.1<br>(1) (2)<br>0~0.1<br>(3)<br>0.3 +− 0.10 0.15 ± 0.05 (1) Emitter<br>ROHM : UMT3 All terminals have same dimensions (2) Base<br>EIAJ : SC-70 (3) Collector<br>BC848B, BC848C<br>SOT-23<br>2.91.9 ±± 0.20.2 0.95 +− 0.20.1<br>0.95 0.95 0.45 ± 0.1<br>(1) (2)<br>0~0.1<br>0.2Min.<br>(3)<br>0.4 +− 0.10.05 0.15 −+ 0.060.1 (1) Emitter<br>All terminals have same dimensions (2) Base<br>ROHM : SST3 (3) Collector<br>0.11.25 ± 2.10.1 ±<br>0.1~0.4<br>0.2 + 1.30.1 − 0.22.4 ±<br>**----- End of picture text -----**<br>


## � **Absolute maximum ratings** (Ta=25°C) 

|Parameter|Parameter|Symbol|Limits|Unit|
|---|---|---|---|---|
|Collector-base voltage||VCBO|30|V|
|Collector-emitter voltage||VCEO|30|V|
|Emitter-base voltage||VEBO|5|V|
|Collector current||IC|0.1|A|
|Collector power<br>dissipation|BC848BW|PC|0.2|W|
||||0.2|W|
||BC848B||0.35|W<br>∗|
|Junction temperature||Tj|150|°C|
|Storage temperature||Tstg|−65~+150|°C|



- ∗ When mounted on a 7 × 5 × 0.6mm ceramic board. 

## � **Electrical characteristics** (Ta=25°C) 

|�**Electrical characteristics**(Ta=25|°C)||||||
|---|---|---|---|---|---|---|
|Parameter|Symbol|Min.|Typ.|Max.|Unit|Conditions|
|Collector-base breakdown voltage|BVCBO|30|−|−|V|IC=50µA|
|Collector-emitter breakdown voltage|BVCEO|30|−|−|V|IC=1mA|
|Emitter-base breakdown voltage|BVEBO|5|−|−|V|IE=50µA|
|Collector cutoff current|ICBO|−|−|100|nA|VCB=30V|
|||−|−|5|µA|VCB=30V, Ta=150°C|
|Collector-emitter saturation voltage|VCE(sat)|−|−|0.25|V|IC/IB=10mA/0.5mA|
|||−|−|0.6||IC/IB=100mA/5mA|
|Base-emitter saturation voltage|VBE(on)|0.58|−|0.77|V|VCE/IC=5V/10mA|
|DC current transfer ratio|hFE|200|−|450|−|VCE/IC=5V/2mA|
|Transition frequency|fT|−|200|−|MHz|VCE=5V, IE=−20mA, f=100MHz|
|Collector output capacitance|Cob|−|3|−|pF|VCB=10V, IE=0, f=1MHz|
|Collector output capacitance|Cib|−|8|−|pF|VEB=0.5V,IE=0,f=1MHz|



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(SPEC-C22)<br>**----- End of picture text -----**<br>


Rev.A 

1/5 

BC848BW / BC848B 

## Transistors 

## � **Packaging specifications** 

|Part No.|BC848BW|BC848B|
|---|---|---|
|Packaging type|UMT3|SST3|
|Marking|G1K|G1K|
|Code|T106|T116|
|Basic ordering unit (pieces)|3000|3000|



## � **Electrical characteristic curves** 

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100 Ta = 25 ° C 10.0 35<br>30<br>80 8.0<br>25<br>60 6.0 20<br>15<br>40 4.0<br>0.1 10<br>20 2.0<br>5<br>00 1.0  IB = 0mA 2.0 00 1.0  IB = 0 µ A Ta = 25 ° C2.0<br>VCE − COLLECTOR-EMITTER  VOLTAGE (V) VCE-COLLECTOR-EMITTER  VOLTAGE (V)<br>Fig.1  Grounded emitter output Fig.2  Grounded emitter output<br>characteristics (   ) characteristics (    )<br>0.4<br>0.2<br>1.2<br>1.0<br>0.8<br>0.6<br>COLLECTOR  CURRENT (mA)IC − -COLLECTOR  CURRENT (mA)IC<br>**----- End of picture text -----**<br>


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1000 Ta = 25 ° C<br>VCE = 10V<br>1V 5V<br>100<br>10<br>0.1 1.0 10 100 1000<br>IC-COLLECTOR  CURRENT (mA)<br>-DC  CURRENT  GAIN<br>FE<br>h<br>**----- End of picture text -----**<br>


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Fig.3  DC current gain vs. collector current (   )<br>**----- End of picture text -----**<br>


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1000<br>VCE=5V<br>Ta = 125 ° C<br>Ta = 25 ° C<br>Ta =− 55 ° C<br>100<br>10<br>0.1 1.0 10 100 1000<br>IC-COLLECTOR  CURRENT (mA)<br>Fig.4  DC current gain vs. collector current (    )<br>-DC  CURRENT  GAIN<br>FE<br>h<br>**----- End of picture text -----**<br>


Rev.A 

2/5 

BC848BW / BC848B 

## Transistors 

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1000 Ta = 25 ° C<br>VCE = 5V<br>f = 1kHz<br>100<br>10<br>0.01 0.1 1 10 100<br>IC-COLLECTOR  CURRENT (mA)<br>Fig.5  AC current gain vs. collector current<br>0.180.16 TaIC/I = B = 2510 ° C 1.8 TaIC/I = B = 2510 ° C 1.8 TaVCE == 255V ° C<br>1.6 1.6<br>0.12<br>1.2 1.2<br>0.08 0.8 0.8<br>0.04 0.4 0.4<br>0 0 0<br>0.1 1.0 10 100 0.1 1.0 10 100 0.1 1.0 10 100<br>IC-COLLECTOR  CURRENT (mA) IC-COLLECTOR  CURRENT (mA) IC-COLLECTOR  CURRENT (mA)<br>Fig.6  Collector-emitter saturation  Fig.7  Base-emitter saturation Fig.8  Grounded emitter propagation<br>voltage vs. collector current voltage vs. collector current characteristics<br>1000 Ta = 25 ° C 1000 Ta = 25 ° C 1000 40V Ta = 25 ° C<br>IC/IB = 10 IC/IB = 10 IC = 101B1 = 101B2<br>3V<br>VCE = 15V<br>VCC = 40V<br>100 100 100<br>10 10 10<br>1.0 10 100 1.0 10 100 1.0 10 100<br>IC-COLLECTOR  CURRENT (mA) IC-COLLECTOR  CURRENT (mA) IC-COLLECTOR  CURRENT (mA)<br>Fig.9  Turn-on time vs. collector  Fig.10  Rise time vs. collector  Fig.11  Storage time vs. collector<br>current current current<br>-AC  CURRENT  GAIN<br>FE<br>h<br>(V)<br> (V) BASE  EMITTER  VOLTAGE (V)<br>BASE  EMITTER  SATURATION  VOLTAGE BE(SAT) VBE(ON)<br>V<br>COLLECTOR  EMITTER  SATURATION  VOLTAGE<br>CE(SAT)<br>V<br>-TURN  ON  TIME (ns)ton -RISE  TIME (ns)t r -STORAGE  TIME (ns)tS<br>**----- End of picture text -----**<br>


Rev.A 

3/5 

BC848BW / BC848B 

## Transistors 

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1000 Ta = 25 ° C 100 Ta = 25 ° C 50 100MHz 200MHz 300MHz 400MHz Ta = 25 ° C<br>VCC = 40V f = 1MHz<br>IC = 101B1 = 101B2<br>400MHz<br>100 10 5.0 300MHz<br>200MHz<br>100MHz<br>10 1 0.5<br>1.0 10 100 0.5 1 10 50 0.5 10 100 500<br>IC-COLLECTOR  CURRENT (mA) REVERSE  BIAS  VOLTAGE (V) IC-COLLECTOR  CURRENT (mA)<br>Fig.12  Fall time vs. collector  Fig.13  Input/output capacitance Fig.14  Gain bandwidth product<br>current vs. voltage<br>1000 Ta = 25 ° C 100 Ta = 25 ° C 10n VCB = 30V<br>VCE = 5V VCE = 6V<br>f = 270Hz<br>1n<br>hoe<br>10 hre<br>hie 100P<br>hre<br>100<br>hfe hfe 10P<br>1<br>IC = 1mA<br>hie = 7.8k Ω<br>hoe hie hfehre == 2804.5 × 10 [−] [5] 1P<br>hoe = 7.5 µ S<br>10 0.1 0.1P<br>0.5 1.0 10 100 500 0.1 1 10 100 0 25 50 75 100 125 150<br>IC-COLLECTOR  CURRENT (mA) IC-COLLECTOR  CURRENT (mA) TA-AMBIENT  TEMPERATURE ( ° C)<br>Fig.15  Gain bandwidth product Fig.16  h parameter  Fig.17  Collector cutoff current<br>vs. collector current vs. collector current<br>Cob<br>Cib<br>-FALL  TIME (ns)t f CAPACITANCE (pF)<br> COLLECTOR-EMITTER  VOLTAGE (V)<br>CE<br>V<br>(MHz)  (A)<br>h  PARAMETER  NORMALIZED  TO  1mA -COLLECTOR  CUTOFF CURRENT<br>CURRENT  GAIN-BANDWIDTH  PRODUCT  ICBO<br>**----- End of picture text -----**<br>


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12 Ta = 25 ° C<br>VCE = 5V<br>10 IC = 100 µ A<br>RS = 10k Ω<br>8<br>6<br>4<br>2<br>0<br>10 100 1k 10k 100k<br>f-FREQUENCY (Hz)<br>Fig.18  Noise vs. collector current<br>NF  NOISE  FIGURE (dB)<br>**----- End of picture text -----**<br>


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100k Ta = 25 ° C<br>VCE = 5V<br>f = 10Hz<br>10k<br>1k<br>100<br>0.01 0.1 1 10<br>IC-COLLECTOR  CURRENT (mA)<br>Fig.19  Noise characteristics (   )<br>NF = 1dB3dB 5dB8dB 12dB<br>) Ω<br>-SOURCE  RESISTANCE (RS<br>**----- End of picture text -----**<br>


Rev.A 

4/5 

BC848BW / BC848B 

## Transistors 

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100k Ta = 25 ° C 100k<br>VCE = 5V<br>f = 30Hz Ta = 25 ° C<br>VCE = 5V<br>10k 10k f = 1kHz<br>1k 1k<br>100 100<br>0.01 0.1 1 10 0.01 0.1 1 10<br>IC-COLLECTOR  CURRENT (mA) IC-COLLECTOR  CURRENT (mA)<br>Fig.20  Noise characteristics (   ) Fig.21  Noise characteristics (    )<br>5dB8dB 12dB<br>3dB<br>NF = 1dB<br>12dB<br>8dB<br>NF = 3dB5dB<br>1dB<br>) Ω ) Ω<br>-SOURCE  RESISTANCE (RS -SOURCE  RESISTANCE (RS<br>**----- End of picture text -----**<br>


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100k<br>Ta = 25 ° C<br>VCE = 5V<br>10k f = 10kHz<br>1k<br>100<br>0.01 0.1 1 10<br>IC-COLLECTOR  CURRENT (mA)<br>Fig.22  Noise characteristics (     )<br>NF = 3dB 5dB 8dB<br>1dB<br>) Ω<br>-SOURCE  RESISTANCE (RS<br>**----- End of picture text -----**<br>


Rev.A 

5/5 

Appendix 

## Notes 

No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. 

The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. 

## About Export Control Order in Japan 

Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. 

In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. 

Appendix1-Rev1.1