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BC848BLT1G
Bipolar (BJT) Single Transistor, General Purpose, NPN, 30 V, 100 mA, 300 mW, SOT-23, Surface Mount
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- Manufacturer: ONSEMI
- Product type: Single Bipolar Junction Transistors - BJT
- Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:30V; Transition Frequency ft:100MHz; Power Dissipation Pd:300mW; DC Collector Current:100mA; DC Current Gain hFE:200hFE; Tra
- MSL: -
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: BCxxx
- Qualification: AEC-Q101
- Power Dissipation: 300mW
- Transistor Mounting: Surface Mount
- Transistor Polarity: NPN
- Transition Frequency: 100MHz
- Transistor Case Style: SOT-23
- DC Current Gain hFE Min: 200hFE
- Operating Temperature Max: 150°C
- Continuous Collector Current: 100mA
- Collector Emitter Voltage Max: 30V
| Delivery and price | |
|---|---|
| Units per pack | 1500 |
| Price | 0.027 € |
| Current stock | 1000+ |
| Lead time | 7 days |
Datasheet
**DATA SHEET www.onsemi.com** ## General Purpose Transistors ## **NPN Silicon** ## BC846ALT1G Series ## **Features** - Moisture Sensitivity Level: 1 - ESD Rating − Human Body Model: > 4000 V ESD Rating − Machine Model: > 400 V - S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable - These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ## **MAXIMUM RATINGS** |**MAXIMUM RATINGS**|||| |---|---|---|---| |**Rating**|**Symbol**|**Value**|**Unit**| |Collector-Emitter Voltage<br>BC846<br>BC847, BC850<br>BC848, BC849|VCEO|65<br>45<br>30|Vdc| |Collector−Base Voltage<br>BC846<br>BC847, BC850<br>BC848, BC849|VCBO|80<br>50<br>30|Vdc| |Emitter−Base Voltage<br>BC846<br>BC847, BC850<br>BC848, BC849|VEBO|6.0<br>6.0<br>5.0|Vdc| |Collector Current − Continuous|IC|100|mAdc| **==> picture [80 x 71] intentionally omitted <==** **----- Start of picture text -----**<br> COLLECTOR<br>3<br>1<br>BASE<br>2<br>EMITTER<br>**----- End of picture text -----**<br> **==> picture [49 x 44] intentionally omitted <==** **----- Start of picture text -----**<br> 3<br>1<br>2<br>**----- End of picture text -----**<br> ## **SOT−23 CASE 318 STYLE 6** ## **MARKING DIAGRAM** **==> picture [62 x 38] intentionally omitted <==** **----- Start of picture text -----**<br> XX M �<br>�<br>1<br>**----- End of picture text -----**<br> XX = Device Code M = Date Code* � = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ## **ORDERING INFORMATION** See detailed ordering and shipping information in the package dimensions section on page 12 of this data sheet. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ## **THERMAL CHARACTERISTICS** |**THERMAL CHARACTERISTICS**|||| |---|---|---|---| |**Characteristic**|**Symbol**|**Max**|**Unit**| |Total Device Dissipation FR−5 Board,<br>(Note 1)<br>TA= 25°C<br>Derate above 25°C|PD|225<br>1.8|mW<br>mW/°C| |Thermal Resistance,<br>Junction−to−Ambient (Note 1)|R�JA|556|°C/W| |Total Device Dissipation<br>Alumina Substrate (Note 2)<br>TA= 25°C<br>Derate above 25°C|PD|300<br>2.4|mW<br>mW/°C| |Thermal Resistance,<br>Junction−to−Ambient (Note 2)|R�JA|417|°C/W| |Junction and Storage<br>Temperature Range|TJ, Tstg|−55 to<br>+150|°C| 1. FR−5 = 1.0 � 0.75 � 0.062 in. 2. Alumina = 0.4 � 0.3 � 0.024 in 99.5% alumina. Publication Order Number: **1** © Semiconductor Components Industries, LLC, 1994 **August, 2021 − Rev. 19** **BC846ALT1/D** **BC846ALT1G Series** ## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) |**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted)|||||| |---|---|---|---|---|---| |**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**| |**OFF CHARACTERISTICS**|||||| |Collector−Emitter Breakdown Voltage<br>BC846A, B, C<br>(IC= 10 mA)<br>BC847A, B, C, BC850B, C<br>BC848A, B, C, BC849B, C|V(BR)CEO|65<br>45<br>30|−<br>−<br>−|−<br>−<br>−|V| |Collector−Emitter Breakdown Voltage<br>BC846A, B, C<br>(IC= 10�A, VEB= 0)<br>BC847A, B, C BC850B, C<br>BC848A, B, C, BC849B, C|V(BR)CES|80<br>50<br>30|−<br>−<br>−|−<br>−<br>−|V| |Collector−Base Breakdown Voltage<br>BC846A, B, C<br>(IC= 10�A)<br>BC847A, B, C, BC850B, C<br>BC848A, B, C, BC849B, C|V(BR)CBO|80<br>50<br>30|−<br>−<br>−|−<br>−<br>−|V| |Emitter−Base Breakdown Voltage<br>BC846A, B, C<br>(IE= 1.0�A)<br>BC847A, B, C, BC850B, C<br>BC848A, B, C, BC849B, C|V(BR)EBO|6.0<br>6.0<br>5.0|−<br>−<br>−|−<br>−<br>−|V| |Collector Cutoff Current (VCB= 30 V)<br>(VCB= 30 V, TA= 150°C)|ICBO|−<br>−|−<br>−|15<br>5.0|nA<br>�A| |**ON CHARACTERISTICS**|||||| |DC Current Gain<br>BC846A, BC847A, BC848A<br>(IC= 10�A, VCE= 5.0 V)<br>BC846B, BC847B, BC848B<br>BC846C, BC847C, BC848C<br>(IC= 2.0 mA, VCE= 5.0 V)<br>BC846A, BC847A, BC848A<br>BC846B, BC847B, BC848B,<br>BC849B, BC850B<br>BC846C, BC847C, BC848C, BC849C, BC850C|hFE|−<br>−<br>−<br>110<br>200<br>420|90<br>150<br>270<br>180<br>290<br>520|−<br>−<br>−<br>220<br>450<br>800|−| |Collector−Emitter Saturation Voltage (IC= 10 mA, IB= 0.5 mA)<br>Collector−Emitter Saturation Voltage(IC= 100 mA, IB= 5.0 mA)|VCE(sat)|−<br>−|−<br>−|0.25<br>0.6|V| |Base−Emitter Saturation Voltage (IC= 10 mA, IB= 0.5 mA)<br>Base−Emitter Saturation Voltage(IC= 100 mA, IB= 5.0 mA)|VBE(sat)|−<br>−|0.7<br>0.9|−<br>−|V| |Base−Emitter Voltage (IC= 2.0 mA, VCE= 5.0 V)<br>Base−Emitter Voltage(IC= 10 mA, VCE= 5.0 V)|VBE(on)|580<br>−|660<br>−|700<br>770|mV| |**SMALL−SIGNAL CHARACTERISTICS**|||||| |Current−Gain − Bandwidth Product<br>(IC= 10 mA, VCE= 5.0 Vdc, f = 100 MHz)|fT|100|−|−|MHz| |Output Capacitance (VCB= 10 V, f = 1.0 MHz)|Cobo|−|−|4.5|pF| |Noise Figure (IC= 0.2 mA,<br>VCE= 5.0 Vdc, RS= 2.0 k�,<br>BC846A,B,C, BC847A,B,C, BC848A,B,C<br>f = 1.0 kHz, BW = 200 Hz)<br>BC849B,C, BC850B,C|NF|−<br>−|−<br>−|10<br>4.0|dB| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. **www.onsemi.com** **2** **BC846ALT1G Series** ## **BC846A, BC847A, BC848A, SBC846A** **==> picture [492 x 596] intentionally omitted <==** **----- Start of picture text -----**<br> 300 300<br>150 ° C VCE = 1 V 150 ° C VCE = 5 V<br>200 200<br>25 ° C 25 ° C<br>100 −55 ° C 100 −55 ° C<br>0 0<br>0.001 0.01 0.1 1 0.001 0.01 0.1 1<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>Figure 1. DC Current Gain vs. Collector Figure 2. DC Current Gain vs. Collector<br>Current Current<br>0.18<br>0.16 IC/IB = 20 150 ° C<br>0.14<br>0.12 25 ° C<br>0.10<br>0.08<br>0.06 −55 ° C<br>0.04<br>0.02<br>0<br>0.0001 0.001 0.01 0.1<br>IC, COLLECTOR CURRENT (A)<br>Figure 3. Collector Emitter Saturation Voltage<br>vs. Collector Current<br>1.0 1.2<br>0.9 IC/IB = 20 −55 ° C 1.1 VCE = 5 V<br>1.0<br>0.8 25 ° C 0.9 −55 ° C<br>0.7 0.8 25 ° C<br>0.6 150 ° C 0.7<br>0.6<br>0.5 150 ° C<br>0.5<br>0.4<br>0.4<br>0.3 0.3<br>0.2 0.2<br>0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>, DC CURRENT GAIN , DC CURRENT GAIN<br>FE FE<br>h h<br>, COLLECTOR−EMITTER<br>SATURATION VOLTAGE (V)<br>CE(sat)<br>V<br>, BASE−EMITTER<br>BE(sat)<br>V , BASE−EMITTER VOLTAGE (V)<br>SATURATION VOLTAGE (V)<br>BE(on)<br>V<br>**----- End of picture text -----**<br> **Figure 4. Base Emitter Saturation Voltage vs. Figure 5. Base Emitter Voltage vs. Collector Collector Current Current** **www.onsemi.com** **3** **BC846ALT1G Series** ## **BC846A, BC847A, BC848A, SBC846A** **==> picture [487 x 384] intentionally omitted <==** **----- Start of picture text -----**<br> 2.0 1.0<br>TA = 25°C -55°C to +125°C<br>1.2<br>1.6<br>IC = 200 mA 1.6<br>1.2<br>IC = IC = IC = 50 mA IC = 100 mA<br>2.0<br>10 mA 20 mA<br>0.8<br>2.4<br>0.4<br>2.8<br>0<br>0.02 0.1 1.0 10 20 0.2 1.0 10 100<br>IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Figure 6. Collector Saturation Region Figure 7. Base−Emitter Temperature Coefficient<br>10 400<br>300<br>7.0 T A = 25°C<br>200<br>5.0 C ib<br>3.0 10080 VTACE = 25 = 10 V°C<br>Cob<br>60<br>2.0<br>40<br>30<br>1.0 20<br>0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 20 40 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50<br>VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc)<br>C)°<br>VCE, COLLECTOR-EMITTER VOLTAGE (V) VB, TEMPERATURE COEFFICIENT (mV/<br>θ<br>C, CAPACITANCE (pF)<br>f�, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)T<br>**----- End of picture text -----**<br> **Figure 8. Capacitances** **Figure 9. Current−Gain − Bandwidth Product** **www.onsemi.com** **4** **BC846ALT1G Series** ## **BC846B, SBC846B** **==> picture [492 x 594] intentionally omitted <==** **----- Start of picture text -----**<br> 600 600<br>150 ° C VCE = 1 V 150 ° C VCE = 5 V<br>500 500<br>400 400<br>25 ° C 25 ° C<br>300 300<br>200 −55 ° C 200 −55 ° C<br>100 100<br>0 0<br>0.001 0.01 0.1 1 0.001 0.01 0.1 1<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>Figure 10. DC Current Gain vs. Collector Figure 11. DC Current Gain vs. Collector<br>Current Current<br>0.30<br>IC/IB = 20 150 ° C<br>0.25<br>0.20<br>25 ° C<br>0.15<br>0.10<br>−55 ° C<br>0.05<br>0<br>0.0001 0.001 0.01 0.1<br>IC, COLLECTOR CURRENT (A)<br>Figure 12. Collector Emitter Saturation Voltage<br>vs. Collector Current<br>1.1 1.2<br>1.0 IC/IB = 20 −55 ° C 1.1 VCE = 5 V<br>1.0<br>0.9 25 ° C 0.9 −55 ° C<br>0.8<br>0.8<br>0.7 25 ° C<br>150 ° C 0.7<br>0.6<br>0.6 150 ° C<br>0.5<br>0.5<br>0.4 0.4<br>0.3 0.3<br>0.2 0.2<br>0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>, DC CURRENT GAIN , DC CURRENT GAIN<br>FE FE<br>h h<br>, COLLECTOR−EMITTER<br>SATURATION VOLTAGE (V)<br>CE(sat)<br>V<br>, BASE−EMITTER<br>BE(sat)<br>V , BASE−EMITTER VOLTAGE (V)<br>SATURATION VOLTAGE (V)<br>BE(on)<br>V<br>**----- End of picture text -----**<br> **Figure 13. Base Emitter Saturation Voltage vs. Collector Current** **Figure 14. Base Emitter Voltage vs. Collector Current** **www.onsemi.com** **5** **BC846ALT1G Series** ## **BC846B, SBC846B** **==> picture [484 x 390] intentionally omitted <==** **----- Start of picture text -----**<br> 2.0 1.0<br>TA = 25°C<br>1.6 1.4<br>20 mA 50 mA 100 mA 200 mA<br>1.2 1.8<br>�VB for VBE<br>0.8 IC = 2.2 -55°C to 125°C<br>10 mA<br>0.4 2.6<br>0 3.0<br>0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200<br>IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Figure 15. Collector Saturation Region Figure 16. Base−Emitter Temperature Coefficient<br>40<br>TA = 25°C VCE = 5 V<br>500 °<br>TA = 25 C<br>20<br>Cib<br>200<br>10<br>100<br>6.0<br>50<br>4.0 Cob<br>20<br>2.0<br>0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 1.0 5.0 10 50 100<br>VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)<br>C)°<br>VB, TEMPERATURE COEFFICIENT (mV/<br>VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) θ<br>C, CAPACITANCE (pF)<br>f�, CURRENT-GAIN - BANDWIDTH PRODUCTT<br>**----- End of picture text -----**<br> **Figure 17. Capacitance** **Figure 18. Current−Gain − Bandwidth Product** **www.onsemi.com** **6** **BC846ALT1G Series** ## **BC847B, BC848B, BC849B, BC850B, SBC847B, SBC848B** **==> picture [489 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> 600 600<br>150 ° C VCE = 1 V 150 ° C VCE = 5 V<br>500 500<br>400 400<br>25 ° C 25 ° C<br>300 300<br>200 −55 ° C 200 −55 ° C<br>100 100<br>0 0<br>0.001 0.01 0.1 1 0.001 0.01 0.1 1<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>, DC CURRENT GAIN , DC CURRENT GAIN<br>FE FE<br>h h<br>**----- End of picture text -----**<br> **Figure 19. DC Current Gain vs. Collector Current** **Figure 20. DC Current Gain vs. Collector Current** **==> picture [492 x 382] intentionally omitted <==** **----- Start of picture text -----**<br> 0.30<br>IC/IB = 20<br>0.25<br>150 ° C<br>0.20<br>25 ° C<br>0.15<br>0.10<br>−55 ° C<br>0.05<br>0<br>0.0001 0.001 0.01 0.1<br>IC, COLLECTOR CURRENT (A)<br>Figure 21. Collector Emitter Saturation Voltage<br>vs. Collector Current<br>1.1 1.2<br>1.0 IC/IB = 20 −55 ° C 1.1 VCE = 5 V<br>1.0<br>0.9<br>25 ° C 0.9 −55 ° C<br>0.8<br>0.8 25 ° C<br>0.7<br>150 ° C 0.7<br>0.6<br>0.6 150 ° C<br>0.5<br>0.5<br>0.4<br>0.4<br>0.3 0.3<br>0.2 0.2<br>0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>, COLLECTOR−EMITTER<br>SATURATION VOLTAGE (V)<br>CE(sat)<br>V<br>, BASE−EMITTER<br>BE(sat)<br>V , BASE−EMITTER VOLTAGE (V)<br>SATURATION VOLTAGE (V)<br>BE(on)<br>V<br>**----- End of picture text -----**<br> **Figure 22. Base Emitter Saturation Voltage vs. Collector Current** **Figure 23. Base Emitter Voltage vs. Collector Current** **www.onsemi.com** **7** **BC846ALT1G Series** ## **BC847B, BC848B, BC849B, BC850B, SBC846B, SBC847B, SBC848B** **==> picture [487 x 394] intentionally omitted <==** **----- Start of picture text -----**<br> 2.0 1.0<br>TA = 25°C -55°C to +125°C<br>1.2<br>1.6<br>IC = 200 mA 1.6<br>1.2<br>IC = IC = IC = 50 mA IC = 100 mA<br>2.0<br>10 mA 20 mA<br>0.8<br>2.4<br>0.4<br>2.8<br>0<br>0.02 0.1 1.0 10 20 0.2 1.0 10 100<br>IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Figure 24. Collector Saturation Region Figure 25. Base−Emitter Temperature<br>Coefficient<br>10 400<br>300<br>7.0 T A = 25°C<br>200<br>5.0 C ib<br>3.0 10080 VTACE = 25 = 10 V°C<br>Cob<br>60<br>2.0<br>40<br>30<br>1.0 20<br>0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 20 40 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50<br>VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc)<br>C)°<br>VCE, COLLECTOR-EMITTER VOLTAGE (V) VB, TEMPERATURE COEFFICIENT (mV/<br>θ<br>C, CAPACITANCE (pF)<br>f�, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)T<br>**----- End of picture text -----**<br> **Figure 26. Capacitances** **Figure 27. Current−Gain − Bandwidth Product** **www.onsemi.com** **8** **BC846ALT1G Series** ## **BC846C, BC847C, BC848C, BC849C, BC850C, SBC847C** **==> picture [492 x 595] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 1000<br>900 150 ° C VCE = 1 V 900 150 ° C VCE = 5 V<br>800 800<br>700 700<br>600 25 ° C 600 25 ° C<br>500 500<br>400 400<br>−55 ° C −55 ° C<br>300 300<br>200 200<br>100 100<br>0 0<br>0.001 0.01 0.1 1 0.001 0.01 0.1 1<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>Figure 28. DC Current Gain vs. Collector Figure 29. DC Current Gain vs. Collector<br>Current Current<br>0.30<br>IC/IB = 20<br>0.25<br>150 ° C<br>0.20<br>25 ° C<br>0.15<br>0.10<br>−55 ° C<br>0.05<br>0<br>0.0001 0.001 0.01 0.1<br>IC, COLLECTOR CURRENT (A)<br>Figure 30. Collector Emitter Saturation Voltage<br>vs. Collector Current<br>1.1 1.2<br>1.0 IC/IB = 20 −55 ° C 1.1 VCE = 5 V<br>1.0<br>0.9<br>25 ° C 0.9 −55 ° C<br>0.8<br>0.7 0.8 25 ° C<br>150 ° C 0.7<br>0.6<br>0.6 150 ° C<br>0.5<br>0.5<br>0.4<br>0.4<br>0.3 0.3<br>0.2 0.2<br>0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>, DC CURRENT GAIN , DC CURRENT GAIN<br>FE FE<br>h h<br>, COLLECTOR−EMITTER<br>SATURATION VOLTAGE (V)<br>CE(sat)<br>V<br>, BASE−EMITTER<br>BE(sat)<br>V , BASE−EMITTER VOLTAGE (V)<br>SATURATION VOLTAGE (V)<br>BE(on)<br>V<br>**----- End of picture text -----**<br> **Figure 31. Base Emitter Saturation Voltage vs. Collector Current** **Figure 32. Base Emitter Voltage vs. Collector Current** **www.onsemi.com** **9** **BC846ALT1G Series** ## **BC846C, BC847C, BC848C, BC849C, BC850C, SBC847C** **==> picture [487 x 394] intentionally omitted <==** **----- Start of picture text -----**<br> 2.0 1.0<br>TA = 25°C -55°C to +125°C<br>1.2<br>1.6<br>IC = 200 mA 1.6<br>1.2<br>IC = IC = IC = 50 mA IC = 100 mA<br>2.0<br>10 mA 20 mA<br>0.8<br>2.4<br>0.4<br>2.8<br>0<br>0.02 0.1 1.0 10 20 0.2 1.0 10 100<br>IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Figure 33. Collector Saturation Region Figure 34. Base−Emitter Temperature<br>Coefficient<br>10 400<br>300<br>7.0 T A = 25°C<br>200<br>5.0 C ib<br>3.0 10080 VTACE = 25 = 10 V°C<br>Cob<br>60<br>2.0<br>40<br>30<br>1.0 20<br>0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 20 40 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50<br>VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc)<br>C)°<br>VCE, COLLECTOR-EMITTER VOLTAGE (V) VB, TEMPERATURE COEFFICIENT (mV/<br>θ<br>C, CAPACITANCE (pF)<br>f�, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)T<br>**----- End of picture text -----**<br> **Figure 35. Capacitances** **Figure 36. Current−Gain − Bandwidth Product** **www.onsemi.com** **10** **BC846ALT1G Series** **==> picture [491 x 382] intentionally omitted <==** **----- Start of picture text -----**<br> 1 1<br>100 mS 10 mS 100 mS 10 mS<br>1 mS 1 mS<br>0.1 1 S 0.1 1 S<br>Thermal Limit Thermal Limit<br>0.01 0.01<br>0.001 0.001<br>1 10 100 0.1 1 10 100<br>VCE, COLLECTOR EMITTER VOLTAGE (V) VCE, COLLECTOR EMITTER VOLTAGE (V)<br>Figure 37. Safe Operating Area for Figure 38. Safe Operating Area for<br>BC846A, BC846B, BC846C BC847A, BC847B, BC847C, BC850B, BC850C<br>1<br>100 mS 10 mS<br>1 mS<br>0.1 1 S<br>Thermal Limit<br>0.01<br>0.001<br>0.1 1 10 100<br>VCE, COLLECTOR EMITTER VOLTAGE (V)<br>, COLLECTOR CURRENT (A) , COLLECTOR CURRENT (A)<br>IC IC<br>, COLLECTOR CURRENT (A)<br>IC<br>**----- End of picture text -----**<br> **Figure 39. Safe Operating Area for BC848A, BC848B, BC848C, BC849B, BC849C** **www.onsemi.com** **11** **BC846ALT1G Series** ## **ORDERING INFORMATION** |**ORDERING INFORMATION**|||| |---|---|---|---| |**Device**|**Marking**|**Package**|**Shipping**†| |BC846ALT1G|1A|SOT−23<br>(Pb−Free)|3,000 / Tape & Reel| |SBC846ALT1G*|||| |BC846ALT3G|||10,000 / Tape & Reel| |BC846BLT1G|1B||3,000 / Tape & Reel| |SBC846BLT1G*|||| |BC846BLT3G|||10,000 / Tape & Reel| |SBC846BLT3G*|||| |BC846CLT1G|3C||3,000 / Tape & Reel| |BC847ALT1G|1E||3,000 / Tape & Reel| |BC847ALT3G|||10,000 / Tape & Reel| |BC847BLT1G|1F||3,000 / Tape & Reel| |SBC847BLT1G*|||| |BC847BLT3G|||10,000 / Tape & Reel| |NSVBC847BLT3G*|||| |BC847CLT1G|1G||3,000 / Tape & Reel| |SBC847CLT1G*|||| |BC847CLT3G|||10,000 / Tape & Reel| |BC848ALT1G|1J||3,000 / Tape & Reel| |BC848BLT1G|1K||3,000 / Tape & Reel| |SBC848BLT1G*|||| |BC848BLT3G|||10,000 / Tape & Reel| |BC848CLT1G|1L||3,000 / Tape & Reel| |NSVBC848CLT1G*|||| |BC848CLT3G|||10,000 / Tape & Reel| |BC849BLT1G|2B||3,000 / Tape & Reel| |NSVBC849BLT1G*|||| |BC849BLT3G|||10,000 / Tape & Reel| |BC849CLT1G|2C||3,000 / Tape & Reel| |BC849CLT3G|||10,000 / Tape & Reel| |BC850BLT1G|2F||3,000 / Tape & Reel| |NSVBC850BLT1G*|||| |BC850CLT1G|2G||| |NSVBC850CLT1G*|||| †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. - *S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. **www.onsemi.com** **12** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **==> picture [494 x 668] intentionally omitted <==** **----- Start of picture text -----**<br> SOT−23 (TO−236)<br>CASE 318−08<br>ISSUE AS<br>2 DATE 30 JAN 2018<br>SCALE 4:1<br>D NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETERS.<br>3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.<br>0.25 MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF<br>“a 3 t = THE BASE MATERIAL.<br>| E HE T 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,PROTRUSIONS, OR GATE BURRS.<br>1 2<br>MILLIMETERS INCHES<br>DIM MIN NOM MAX MIN NOM MAX<br>L A 0.89 1.00 1.11 0.035 0.039 0.044<br>3X b L1 A1b 0.010.37 0.060.44 0.100.50 0.0000.015 0.0020.017 0.0040.020<br>e VIEW C c 0.08 0.14 0.20 0.003 0.006 0.008<br>TOP VIEW D 2.80 2.90 3.04 0.110 0.114 0.120<br>E 1.20 1.30 1.40 0.047 0.051 0.055<br>e 1.78 1.90 2.04 0.070 0.075 0.080<br>L 0.30 0.43 0.55 0.012 0.017 0.022<br>A L1 0.35 0.54 0.69 0.014 0.021 0.027<br>H E 2.10 2.40 2.64 0.083 0.094 0.104<br>= T 0 ° −−− 10 ° 0 ° −−− 10 °<br>a A1 SIDE VIEW SEE VIEW C c<br>GENERIC<br>END VIEW<br>MARKING DIAGRAM*<br>RECOMMENDED<br>SOLDERING FOOTPRINT XXXM<br>1<br>2.90 i 0.903X XXX = Specific Device Code oo<br>M = Date Code<br>= Pb−Free Package<br>LO | cr ,<br>*This information is generic. Please refer to<br>3X 0.80 a) LL 0.95 device data sheet for actual part marking.<br>PITCH Pb−Free indicator, “G” or microdot “ ”, |<br>DIMENSIONS: MILLIMETERS may or may not be present.<br>STYLE 1 THRU 5: STYLE 6: STYLE 7: STYLE 8:<br>CANCELLED PIN 1. BASE PIN 1. EMITTER PIN 1. ANODE<br>2. EMITTER 2. BASE 2. NO CONNECTION<br>3. COLLECTOR 3. COLLECTOR 3. CATHODE<br>STYLE 9: STYLE 10: STYLE 11: STYLE 12: STYLE 13: STYLE 14:<br>PIN 1. ANODE PIN 1. DRAIN PIN 1. ANODE PIN 1. CATHODE PIN 1. SOURCE PIN 1. CATHODE<br>2. ANODE 2. SOURCE 2. CATHODE 2. CATHODE 2. DRAIN 2. GATE<br>3. CATHODE 3. GATE 3. CATHODE−ANODE 3. ANODE 3. GATE 3. ANODE<br>STYLE 15: STYLE 16: STYLE 17: STYLE 18: STYLE 19: STYLE 20:<br>PIN 1. GATE PIN 1. ANODE PIN 1. NO CONNECTION PIN 1. NO CONNECTION PIN 1. CATHODE PIN 1. CATHODE<br>2. CATHODE 2. CATHODE 2. ANODE 2. CATHODE 2. ANODE 2. ANODE<br>3. ANODE 3. CATHODE 3. CATHODE 3. ANODE 3. CATHODE−ANODE 3. GATE<br>STYLE 21: STYLE 22: STYLE 23: STYLE 24: STYLE 25: STYLE 26:<br>PIN 1. GATE PIN 1. RETURN PIN 1. ANODE PIN 1. GATE PIN 1. ANODE PIN 1. CATHODE<br>2. SOURCE 2. OUTPUT 2. ANODE 2. DRAIN 2. CATHODE 2. ANODE<br>3. DRAIN 3. INPUT 3. CATHODE 3. SOURCE 3. GATE 3. NO CONNECTION<br>STYLE 27: STYLE 28:<br>PIN 1. CATHODE PIN 1. ANODE<br> 2. CATHODE 2. ANODE<br> 3. CATHODE 3. ANODE<br>Electronic versions are uncontrolled except when accessed directly from the Document Repository.<br>DOCUMENT NUMBER: 98ASB42226B Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.<br>DESCRIPTION: SOT−23 (TO−236) PAGE 1 OF 1<br>aes<br>ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.<br>ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding<br>the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically<br>disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the<br>rights of others.<br>**----- End of picture text -----**<br> www.onsemi.com © Semiconductor Components Industries, LLC, 2019 **onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi’s** product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **PUBLICATION ORDERING INFORMATION** **LITERATURE FULFILLMENT** : **TECHNICAL SUPPORT Email Requests to:** orderlit@onsemi.com **North American Technical Support: Europe, Middle East and Africa Technical Support:** Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 00421 33 790 2910 **onsemi Website:** www.onsemi.com Phone: 011 421 33 790 2910 For additional information, please contact your local Sales Representative ◊ **==> picture [232 x 43] intentionally omitted <==**
Updated at March 24, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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