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BC847PNQ-7-F
Bipolar Transistor Array, Complementary NPN and PNP, 45 V, 45 V, 100 mA, 100 mA, 200 mW
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- Manufacturer: DIODES INC.
- Product type: Bipolar Junction Transistor Arrays - BJT
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 6Pins
- Product Range: -
- Qualification: AEC-Q101
- Transistor Mounting: Surface Mount
- Transistor Polarity: Complementary NPN and PNP
- Power Dissipation NPN: 200mW
- Power Dissipation PNP: 200mW
- Transistor Case Style: SOT-363
- Transition Frequency NPN: 300MHz
- Transition Frequency PNP: 200MHz
- Operating Temperature Max: 150°C
- DC Current Gain hFE Min NPN: 200hFE
- DC Current Gain hFE Min PNP: 200hFE
- Continuous Collector Current NPN: 100mA
- Continuous Collector Current PNP: 100mA
- Collector Emitter Voltage Max NPN: 45V
- Collector Emitter Voltage Max PNP: 45V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.054 € |
| Current stock | 1000+ |
| Lead time | 7 days |
Datasheet
**BC847PNQ COMPLEMENTARY PAIR SMALL SIGNAL TRANSISTOR IN SOT363** ## **Description** This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. ## **Features** - Epitaxial Die Construction - Two Internally Isolated NPN/PNP Transistors in One Package ## **Mechanical Data** - Case: SOT363 - Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 - Moisture Sensitivity: Level 1 per J-STD-020 - Terminals: Finish Matte Tin Finish. Solderable per MIL-STD-202, Method 208 - Weight: 0.006 grams (Approximate) - Ideal for Medium Power Amplification and Switching - Ultra-Small Surface Mount Package - **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** - **Halogen and Antimony Free. "Green" Device (Note 3)** - **Qualified to AEC-Q101 Standards for High Reliability** - **PPAP Capable (Note 4)** **==> picture [33 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> SOT363<br>**----- End of picture text -----**<br> **==> picture [36 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> Top View<br>**----- End of picture text -----**<br> **==> picture [73 x 114] intentionally omitted <==** **----- Start of picture text -----**<br> C1 B2 E2<br>E1 B1 C2<br>Device Schematic<br>Top View<br>**----- End of picture text -----**<br> ## **Ordering Information** (Notes 4 & 5) |**Ordering Informationg Information Information** (Notes 4 & 5)|**Ordering Informationg Information Information** (Notes 4 & 5)|**Ordering Informationg Information Information** (Notes 4 & 5)|**Ordering Informationg Information Information** (Notes 4 & 5)|**Ordering Informationg Information Information** (Notes 4 & 5)|**Ordering Informationg Information Information** (Notes 4 & 5)| |---|---|---|---|---|---| ||||||| |**Part Number**|**Compliance**|**Marking**|**Reel Size(inches)**|**Tape Width(mm)**|**Quantity per Reel**| |BC847PNQ-7-F|Automotive|K7P|7|8|3,000| |BC847PNQ-7R-F|Automotive|K7P|7|8|3,000| - Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. ## **Marking Information** K7P = Product Type Marking Code YM = Date Code Marking Y = Year (ex: D = 2016) M = Month (ex: 9 = September) ## Date Code Key **Year 2015 2016 2017 2018 2019 2020 2021 2022 Code** C D E F G H I J **Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec** ~~4~~ **Code** 1 2 3 4 5 6 7 8 9 O N D BC847PNQ 1 of 6 June 2016 **www.diodes.com** © Diodes Incorporated BC847PNQ Document number: DS38982 Rev. 1 - 2 **BC847PNQ** ## **Absolute Maximum Ratings: NPN, BC847B Type (Q1)** (@TA = +25°C, unless otherwise specified.) ||||| |---|---|---|---| |**Characteristic**|**Symbol**|**Value**|**Unit**| |Collector-BaseVoltage|VCBO|50|V| |Collector-Emitter Voltage|VCEO|45|V| |Emitter-BaseVoltage|VEBO|6|V| |Collector Current|IC|100|mA| |PeakCollectorCurrent|ICM|200|mA| |Peak Emitter Current|IEM|200|mA| ## **Absolute Maximum Ratings: PNP, BC857B Type (Q2)** (@TA = +25°C, unless otherwise specified.) |**Absolute Maximum Ratings:gs:s:** **PNP, BC857B Type (Q2), BC857B Type (Q2) BC857B Type (Q2)ype (Q2)e (Q2)(Q2)Q2)2))** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Absolute Maximum Ratings:gs:s:** **PNP, BC857B Type (Q2), BC857B Type (Q2) BC857B Type (Q2)ype (Q2)e (Q2)(Q2)Q2)2))** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Absolute Maximum Ratings:gs:s:** **PNP, BC857B Type (Q2), BC857B Type (Q2) BC857B Type (Q2)ype (Q2)e (Q2)(Q2)Q2)2))** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Absolute Maximum Ratings:gs:s:** **PNP, BC857B Type (Q2), BC857B Type (Q2) BC857B Type (Q2)ype (Q2)e (Q2)(Q2)Q2)2))** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)| |---|---|---|---| ||||| |**Characteristic**|**Symbol**|**Value**|**Unit**| |Collector-BaseVoltage|VCBO|-50|V| |Collector-Emitter Voltage|VCEO|-45|V| |Emitter-BaseVoltage|VEBO|-6|V| |Collector Current|IC|-100|mA| |PeakCollectorCurrent|ICM|-200|mA| |Peak Emitter Current|IEM|-200|mA| **Thermal Characteristics – Total Device** (@TA = +25°C, unless otherwise specified.) |**Thermal Characteristics – Total Device – Total Device**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|| |---|---|---|---| |**Characteristic**|**Symbol **|**Value**|**Unit**| |Power Dissipation(Note 6)Total Device|PD|200|mW| |Thermal Resistance,Junction to Ambient(Note 6)|RJA|625|°C/W| |Operating and StorageTemperatureRange|TJ,TSTG|-65 to+150|°C| Note: 6. For a device mounted on minimum recommended pad layout with 1oz copper that is on a single-sided 1.6mm FR-4 PCB; the device is measured under still air conditions whilst operating in a steady-state. ## **Thermal Characteristics – Total Device** **==> picture [213 x 212] intentionally omitted <==** **----- Start of picture text -----**<br> 250 Pf | tt ttt tt<br>200<br>ypPIN| EE peTT |<br>aN<br>150 SRNR<br>100 Pt | EXT EL |<br>Pf | | IN EE<br>50 ef | | LINEL<br>ttt<br>0 FP} tttTEEALEKE EL I<br>0 40 80 120 160 200<br>TA, AMBIENT TEMPERATURE (°C)<br>Fig. 1, Power Derating Curve (Total Device)<br>, POWER DISSIPATION (mW)<br>P<br>d<br>**----- End of picture text -----**<br> 2 of 6 **www.diodes.com** BC847PNQ Document number: DS38982 Rev. 1 - 2 June 2016 © Diodes Incorporated **BC847PNQ** **Electrical Characteristics: NPN, BC847B Type (Q1)** (@TA = +25°C, unless otherwise specified.) |**Electrical Characteristics:** **NPN, BC847B Type (Q1), BC847B Type (Q1) BC847B Type (Q1)ype (Q1)e (Q1)(Q1)Q1)1))** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics:** **NPN, BC847B Type (Q1), BC847B Type (Q1) BC847B Type (Q1)ype (Q1)e (Q1)(Q1)Q1)1))** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics:** **NPN, BC847B Type (Q1), BC847B Type (Q1) BC847B Type (Q1)ype (Q1)e (Q1)(Q1)Q1)1))** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics:** **NPN, BC847B Type (Q1), BC847B Type (Q1) BC847B Type (Q1)ype (Q1)e (Q1)(Q1)Q1)1))** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics:** **NPN, BC847B Type (Q1), BC847B Type (Q1) BC847B Type (Q1)ype (Q1)e (Q1)(Q1)Q1)1))** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics:** **NPN, BC847B Type (Q1), BC847B Type (Q1) BC847B Type (Q1)ype (Q1)e (Q1)(Q1)Q1)1))** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics:** **NPN, BC847B Type (Q1), BC847B Type (Q1) BC847B Type (Q1)ype (Q1)e (Q1)(Q1)Q1)1))** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)| |---|---|---|---|---|---|---| |||||||| |**Characteristic(Note 7)**<br>~~a~~|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**| |Collector-BaseBreakdown Voltage<br>~~a~~|BVCBO|50<br>~~SC~~|—<br>~~SC~~|—<br>~~SC~~|V<br>~~SC~~|IC= 100µA| |Collector-Emitter Breakdown Voltage<br>~~a~~|BVCEO|45<br>~~CC~~|—<br>~~CC~~|—<br>~~CC~~|V<br>~~CC~~|IC= 10mA| |Emitter-BaseBreakdown Voltage<br>~~a~~|BVEBO<br>~~CC~~|6<br>~~CC~~|—<br>~~CC~~|—<br>~~CC~~|V<br>~~CC~~|IE= 100µA<br>~~CC~~| |DC Current Gain|hFE<br>~~ee~~|200<br>~~ee~~|290<br>~~ee~~|450<br>~~ee~~|—<br>~~ee~~|VCE= 5.0V,IC= 2.0mA| |Collector-Emitter Saturation Voltage<br>~~ee~~|VCE(SAT)<br>~~ee~~<br>~~ee~~|—<br>~~ee~~<br>~~ee~~|90<br>200<br>~~ee~~<br>~~ee~~|250<br>600<br>~~ee~~<br>~~ee~~|mV<br>~~ee~~<br>~~ee~~|IC= 10mA, IB= 0.5mA<br>IC= 100mA,IB= 5.0mA<br>~~ee~~| |Base-Emitter Saturation Voltage|VBE(SAT)<br>~~ee ~~|—<br> ~~ee ~~|700<br>900<br> ~~ee~~|—<br>~~ee ~~|mV<br> ~~ee~~|IC= 10mA, IB= 0.5mA<br>IC= 100mA,IB= 5.0mA| |Base-Emitter Voltage|VBE(ON)|580<br>—|660<br>—|700<br>720|mV|VCE= 5.0V, IC= 2.0mA<br>VCE= 5.0V,IC= 10mA| |Collector-Cutoff Current|ICBO|—<br>—|—<br>—|15<br>5.0|nA<br>µA|VCB= 30V<br>VCB= 30V,TA= +150°C| |Gain Bandwidth Product|fT|100|300|—|MHz|VCE= 5.0V, IC= 10mA,<br>f = 100MHz| |Collector-Base Capacitance|CCBO|—|3.5|6.0|pF|VCB= 10V,f = 1.0MHz| |Noise Figure|NF|—|2.0|10|dB|VCE= 5V, IC= 200µA,<br>Rg= 2.0kΩf = 1.0kHz,<br>f = 200Hz| Note: 7. Short duration pulse test used to minimize self-heating effect. **==> picture [477 x 437] intentionally omitted <==** **----- Start of picture text -----**<br> 1,000 0.5<br>IC<br>aeee I B = 20<br>foo e e | 0.4 | ||<br>100<br>ree ee OI Ca<br>Se ec 0.3 a TT<br>F es oreet [THELIST] ee et ernTTI<br>Co Conn Coe Co 0.2 Sine T A = 100°C vaili<br>10 a | THI 71<br>SSSasiee =aaeeeit| Semenaaa|Semel 0.1 apTeel! T A = 25°C IIIraHr TTI aill<br>Con Conn Coe Co or er<br>1 a a 0 tire TA = -50 i °C Ell<br>0.01 0.1 1.0 10 100 0.1 1.0 10 100<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Figure 2. Typical DC Current Gain vs. Collector Current Figure 3. Typical Collector-Emitter Saturation Voltage<br>(BC847B Type) vs. Collector Current (BC847B Type)<br>16 1,000 TA = 25°C FEE | Ea — EH<br>14 ce f = 1MHz e See e e e t<br>HUTTE Fi es a | VCE = 10V<br>oA LLLEEE | ee CI et<br>ACCEECEEEE EEE EEEPP en So<br>10 VCE =5V<br>A ra VCE = \\ 2V<br>A CHUREERO0HSE000000000000008 100 | WA] \<br>Se t<br>6 RH C ibo eet eet<br>NEE tetettetethEEEEEE ttt A ATLCI iCIe<br>« MECC A COE al<br>C obo<br>EET EE a a |<br>ore<br>o SURRERH0GRSRRARAGREAEC E OUREREAG= 10 a all<br>0 5 10 15 20 25 30 0.1 1.0 10 100<br>VR, REVERSE VOLTAGE (V) IC, COLLECTOR CURRENT (mA)<br>Figure 4. Typical Capacitance Characteristics (BC847B Type) Figure 5. Typical Gain-Bandwidth Product<br>vs. Collector Current (BC847B Type)<br>, GAIN-BANDWIDTH PRODUCT (MHz)<br>fT<br>CE<br>, COLLECTOR-EMITTER<br>V SATURATION VOLTAGE (V)<br>CAPACITANCE (pF)<br> DC CURRENT GAIN<br>FE,<br>h<br>**----- End of picture text -----**<br> 3 of 6 **www.diodes.com** BC847PNQ Document number: DS38982 Rev. 1 - 2 June 2016 © Diodes Incorporated **BC847PNQ** rd **Electrical Characteristics: PNP, BC857B Type (Q2)** (@TA = +25°C unless otherwise specified.) |~~a~~|~~a~~|~~a~~|~~a~~|~~a~~|~~a~~|~~a~~| |---|---|---|---|---|---|---| |**Characteristic(Note 8)**<br>~~a~~|**Symbol**<br>|**Min**<br><br>~~ff~~|**Typ**<br><br>~~ff~~|**Max**<br><br>~~ff~~|**Unit**<br><br>~~ff~~|**Test Condition**<br>| |Collector-BaseBreakdown Voltage<br>~~aPe~~|BVCBO<br>~~Pe~~|-50<br>~~Pe~~<br>~~ff~~<br>~~GO~~|—<br>~~Pe~~<br>~~ff~~<br>~~GO~~|—<br>~~Pe~~<br>~~ff~~<br>~~(GOO~~|V<br>~~Pe~~<br>~~ff~~<br>~~(GOO~~|IC= -100µA<br>~~Pe~~<br>~~(OO~~| |Collector-Emitter Breakdown Voltage<br>~~GO~~|BVCEO<br>~~GO~~|-45<br>~~ff~~<br>~~GO~~<br>~~GO~~<br>~~QQ~~|—<br>~~ff~~<br>~~GO~~<br>~~GO~~<br>~~QQ~~|—<br>~~ff~~<br>~~GO~~<br>~~(GOO~~<br>~~QQ~~|V<br>~~ff~~<br>~~GO~~<br>~~(GOO~~<br>~~(OQ~~|IC= -10mA<br>~~GO~~<br>~~(OO~~<br>~~(OQ~~| |Emitter-BaseBreakdown Voltage<br>~~GO~~|BVEBO<br>~~GO~~|-6<br>~~GO~~<br>~~GO~~<br>~~QQ~~|—<br>~~GO~~<br>~~GO~~<br>~~QQ~~|—<br>~~(GOO~~<br>~~GO~~<br>~~QQ~~|V<br>~~(GOO ~~<br>~~GO~~<br>~~(OQ~~|IE= -100µA<br> ~~(OO~~<br>~~GO~~<br>~~(OQ~~| |DC Current Gain|hFE<br>~~Ge~~|220<br>~~QQ~~<br>~~ed~~|290<br>~~QQ~~<br>~~es~~|475<br>~~QQ ~~<br>~~es~~|—<br> ~~(OQ~~|VCE= -5.0V,IC= -2.0mA<br>~~(OQ~~| |Collector-Emitter Saturation Voltage<br>~~es~~|VCE(SAT)<br>~~es~~<br>~~Ge~~|—<br>~~es~~<br>~~ed~~|-75<br>-250<br>~~es~~<br>~~es~~|-300<br>-650<br>~~es~~<br>~~es~~|mV<br>~~es~~|IC= -10mA, IB= -0.5mA<br>IC= -100mA,IB= -5.0mA<br>~~es~~| |Base-Emitter Saturation Voltage|VBE(SAT)<br>~~Ge ~~|—<br> ~~ed ~~|-700<br>-850<br> ~~es~~|—<br>-950<br>~~es~~|mV|IC= -10mA, IB= -0.5mA<br>IC= -100mA,IB= -5.0mA| |Base-Emitter Voltage|VBE(ON)|-600<br>—|-650<br>—|-750<br>-820|mV|VCE= -5.0V, IC= -2.0mA<br>VCE= -5.0V,IC= -10mA| |Collector-Cutoff Current|ICBO|—<br>—|—<br>—|-15<br>-4.0|nA<br>µA|VCB= -30V<br>VCB= -30V,TA= +150°C| |Gain Bandwidth Product|fT|100|200|—|MHz|VCE= -5.0V, IC= -10mA,<br>f = 100MHz| |Collector-Base Capacitance<br>~~ee~~|CCBO<br>~~e~~|—<br>~~eee~~|3<br>~~eee~~|4.5<br>~~eee~~|pF<br>~~eee~~|VCB= -10V,f = 1.0MHz<br>~~eee~~| |Noise Figure<br>~~ee~~|NF<br>~~e~~|—<br>~~eee~~|—<br>~~eee~~|10<br>~~eee~~|dB<br>~~eee~~|VCE= -5V, IC= -200µA,<br>Rg= 2.0kΩf = 1.0kHz,<br>f = 200Hz<br>~~eee~~| **==> picture [483 x 428] intentionally omitted <==** **----- Start of picture text -----**<br> -1,000 -0.5<br>IC<br>|rr Vee 8v T l IB [= 10]<br>e—— NNe| -0.4<br>-100 TateAL CII<br>F eeta=2e¢ee |F_ TA5 aaeee -0.3 |<br>-10 FH,reeeCe ee=-CIEsee CHANTCET NlFyClTL -0.2 TA = 150 °C T A = 25°°C C y | |<br>St Hy<br>a | nN Wf |<br>-0.1<br>FEE SE ee et HH Hee<br>TA = -50 °C<br>-1 Scone mi 0 Bani mai aa<br>-1 -10 -100 -1,000 -0.1 -1 -10 -100 -1,000<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Figure 6. Typical DC Current Gain vs. Collector Current Figure 7. Typical Collector-Emitter Saturation Voltage<br>(BC857B Type) vs. Collector Current (BC857B Type)<br>TT 18 f = 1MHz -1,000 F S vee=CE - svST[tttSatT EET T T<br>HTT P e<br>SAL TAATTANTAATOGTUGTTOATEQTIGT —<br>12 \<br>10 A N\CUUTEATHATAATUAITAATOOTENTIN -100 Batllei ee ee ||<br>8 CUNT [\] Cibo po== SanTN<br>\ es Oe OO 0 Oe<br>NCE rT<br>4 6 SO et<br>Cobo<br>iTTTTa lll<br>A TUARNUUTUATURROOROUODUATOORODN -10<br>0 5 10 15 20 25 30 -1 -10 -100<br>VR, REVERSE VOLTAGE (V) IC, COLLECTOR CURRENT (mA)<br>Figure 9. Typical Gain-Bandwidth Product<br>Figure 8. Typical Capacitance Characteristics (BC857B Type)<br>vs. Collector Current (BC857B Type)<br>CAPACITANCE (pF)<br>, DC CURRENT GAIN<br>FE<br>h<br>, COLLECTOR-EMITTER<br>SATURATION VOLTAGE (V)<br>CE(SAT)<br>V<br>f , GAIN-BANDWIDTH PRODUCT (MHz)t<br>**----- End of picture text -----**<br> 4 of 6 **www.diodes.com** BC847PNQ Document number: DS38982 Rev. 1 - 2 June 2016 © Diodes Incorporated **BC847PNQ** ## **Package Outline Dimensions** Please see http://www.diodes.com/package-outlines.html for the latest version. **==> picture [380 x 230] intentionally omitted <==** **----- Start of picture text -----**<br> SOT363<br>SOT363<br>Dim Min Max Typ<br>E E1 A1 0.00 0.10 0.05<br>A2 0.90 1.00 1.00<br>b 0.10 0.30 0.25<br>c 0.10 0.22 0.11<br>D 1.80 2.20 2.15<br>E 2.00 2.20 2.10<br>= F b E1 1.15 1.35 1.30<br>e 0.650 BSC<br>F 0.40 0.45 0.425<br>D L 0.25 0.40 0.30<br>a 0° 8° --<br>All Dimensions in mm<br>A2<br>c a<br>A1 e |lan L a<br>**----- End of picture text -----**<br> ## **Suggested Pad Layout** Please see http://www.diodes.com/package-outlines.html for the latest version. **SOT363** **==> picture [142 x 144] intentionally omitted <==** **----- Start of picture text -----**<br> C<br>Y1 Fo oo, G<br>Y<br>mauiu X ing<br>**----- End of picture text -----**<br> |**Dimensions**|**Value**<br>**(in mm)**| |---|---| |**C**|0.650| |**G**|1.300| |**X**|0.420| |**Y**|0.600| |**Y1**|2.500| 5 of 6 **www.diodes.com** BC847PNQ Document number: DS38982 Rev. 1 - 2 June 2016 © Diodes Incorporated **BC847PNQ** ## **IMPORTANT NOTICE** DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. ## **LIFE SUPPORT** Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: - A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2016, Diodes Incorporated **www.diodes.com** 6 of 6 **www.diodes.com** BC847PNQ Document number: DS38982 Rev. 1 - 2 June 2016 © Diodes Incorporated
Updated at March 26, 2026
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