BC847CLT1G

Bipolar (BJT) Single Transistor, General Purpose, NPN, 45 V, 100 mA, 300 mW, SOT-23, Surface Mount

⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.

Manufacturer: ONSEMI
Product type: Single Bipolar Junction Transistors - BJT
Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:100MHz; Power Dissipation Pd:300mW; DC Collector Current:100mA; DC Current Gain hFE:520hFE; Transistor Cas
MSL: -
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 3Pins
Product Range: BCxxx
Qualification: AEC-Q101
Power Dissipation: 300mW
Transistor Mounting: Surface Mount
Transistor Polarity: NPN
Transition Frequency: 100MHz
Transistor Case Style: SOT-23
DC Current Gain hFE Min: 520hFE
Operating Temperature Max: 150°C
Continuous Collector Current: 100mA
Collector Emitter Voltage Max: 45V

Delivery and price
Units per pack	1500
Price	0.023 €
Current stock	1000+
Lead time	7 days

Datasheet

## Initial Product/Process Change Notification Document #:IPCN27274X Issue Date:13 Feb 2026 

|**Title of Change:**<br>SOT23 Package Dual Source Qualification from LPS, China to JCET Chuzhou,China<br>~~eG~~|**Title of Change:**<br>SOT23 Package Dual Source Qualification from LPS, China to JCET Chuzhou,China<br>~~eG~~|**Title of Change:**<br>SOT23 Package Dual Source Qualification from LPS, China to JCET Chuzhou,China<br>~~eG~~|
|---|---|---|
|**Proposed First Ship date:**<br>17 Oct 2026 or earlier if approved by customer<br>~~Ge~~|||
|**Contact Information:**|Contact your local onsemi Sales Office||
|**PCN Samples Contact:**<br>Contact your local onsemi Sales Office.<br>Sample requests are to be submitted no later than 30 days from the date of first notification,<br>Initial PCN or Final PCN, for this change.<br>Samples delivery timing will be subject to request date, sample quantity and special customer<br>packing/label requirements.<br>~~pp~~|||
|**Type of Notification:**|This is an Initial Product/Process Change Notification (IPCN) sent to customers. An IPCN is an||
||advance notification about an upcoming change and contains general information regarding the||
||change details and devices affected. It also contains the preliminary reliability qualification plan.||
||The completed qualification and characterization data will be included in the Final Product/Process||
||Change Notification (FPCN). This IPCN notification will be followed by a Final Product/Process||
||Change Notification (FPCN) at least 90 days prior to implementation of the change. In case of||
||questions, contact <PCN.Support@onsemi.com>||
|**Marking of Parts/ Traceability of**<br>**Change:**|Changed material can be identified by lot code||
|**Change Category:**<br>Assembly Change,  Test Change<br>~~Ge~~|||
|**Change Sub-Category(s):**<br>Manufacturing Site Addition<br>~~Ge~~|||
|**Sites Affected:**|||
|**onsemi Sites**<br>**External Foundry/Subcon Sites**<br>~~eG~~|||
|None<br>~~a~~||JCET, China<br>~~G~~|



## **Description and Purpose:** 

This Initial Product Change Notification (IPCN) is provided as an early notification to inform customers of the planned qualification of JCET Chuzhou, China, as an additional assembly and Final Test site for the SOT23 package, alongside the current site, Leshan Joint Venture (LPS), China. 

JCET is an existing, qualified subcontract manufacturing site for onsemi. The facility is certified with ISO 9001:2015 for assembly and test operations. To help ensure business continuity, customers are strongly encouraged to initiate and expedite their internal qualification activities using engineering samples, which will be provided upon request. 

Early customer evaluation and approval based on these samples will help enable faster readiness once qualification is completed. A final notification will be issued upon successful completion of the full qualification. 

||**Before Change Description**|**After Change Description**|**After Change Description**|
|---|---|---|---|
|**Assembly & Test Site**|Leshan Joint Venture (LPS), China|Leshan Joint Venture (LPS), China|JCET Chuzhou, China|
|**LeadFrame**|SOT23 24R Cu PLT|SOT23 24R Cu PLT|SOT23 3L A42 Ag plating|
|**Mold Compound**|GR640 HV L1 (M7A)|GR640 HV L1(M7A)|EDALE ELER 8100HFE|



The traceability of marking will be maintained by assembly plant code, lot code and date code. 

TEM001790 Rev. G 

Page 1 of 3 

Initial Product/Process Change Notification Document #:IPCN27274X Issue Date:13 Feb 2026 

## **Qualification Plan:** 

**QV DEVICE NAME: MMBT2907ALT1G, BSR16 RMS: 108969, 70383 PACKAGE: SOT-23-3** 

|**Test**|**Specification**|**Condition**|**Interval**|
|---|---|---|---|
|High Temperature Reverse Bias|JESD22-A108|Ta=150°C,100% max rated V|1008 hrs|
|High Temperature Storage Life|JESD22-A103|Ta= 150°C|1008 hrs|
|Preconditioning|J-STD-020 JESD-A113|MSL 1@260 °C||
|Intermittent Operating Life|MIL-STD-750<br>(M1037)<br>AEC-Q101|Ta=+25°C, delta Tj=100°C<br>On/off = 2 min|15000 cyc|
|Temperature Cycling|JESD22-A104|Ta= -55°C to +150°C|1000 cyc|
|High Humidity, High Temperature<br>Reverse Bias|JESD22-A101|85°C, 85% RH, bias|2016 hrs|
|Unbiased HighlyAccelerated Stress Test|JESD22-A118|130°C,85% RH,18.8psig,unbiased|96 hrs|
|Resistance to Solder Heat|JESD22- B106|Ta = 265°C,10 sec||
|Solderability|JSTD002|Ta = 245°C,5 sec||
|Physical Dimension|JESD22-B120|||



**QV DEVICE NAME: BC817-40LT3 RMS: 108972 PACKAGE: SOT-23-3** 

|**Test**|**Specification**|**Condition**|**Interval**|
|---|---|---|---|
|High Temperature Reverse Bias|JESD22-A108|Ta=150°C,100% max rated V|1008 hrs|
|High Temperature Storage Life|JESD22-A103|Ta= 150°C|1008 hrs|
|Preconditioning|J-STD-020 JESD-A113|MSL 1@260 °C||
|Intermittent Operating Life|MIL-STD-750<br>(M1037)<br>AEC-Q101|Ta=+25°C, delta Tj=100°C<br>On/off = 2 min|15000 cyc|
|Temperature Cycling|JESD22-A104|Ta= -55°C to +150°C|1000 cyc|
|HighlyAccelerated Stress Test|JESD22-A110|130°C,85% RH,18.8psig,bias|96 hrs|
|Unbiased HighlyAccelerated Stress Test|JESD22-A118|130°C,85% RH,18.8psig,unbiased|96 hrs|
|Resistance to Solder Heat|JESD22- B106|Ta = 265°C,10 sec||
|Solderability|JSTD002|Ta = 245°C,5 sec||
|Physical Dimension|JESD22-B120|||



Estimated date for qualification completion: **30 June 2026** 

## **Electrical Characteristic Summary:** 

Electrical characteristics are not impacted. 

TEM001790 Rev. G 

Page 2 of 3 

Initial Product/Process Change Notification Document #:IPCN27274X Issue Date:13 Feb 2026 

## **List of Affected Parts:** 

_**Note:** Only the standard (off the shelf) part numbers are listed in the parts list.  Any custom parts affected by this PCN are shown in the customer specific PCN addendum in the PCN email notification, or on the_ _**PCN Customized Portal.**_ 

|**List of Affected Parts:**<br>**_Note:_**_Only the standard (off the shelf) part numbers are listed in the parts list.  Any custom parts affected by this PCN are shown in the customer_<br>_specific PCN addendum in the PCN email notification, or on the_**_PCN Customized Portal._**|**List of Affected Parts:**<br>**_Note:_**_Only the standard (off the shelf) part numbers are listed in the parts list.  Any custom parts affected by this PCN are shown in the customer_<br>_specific PCN addendum in the PCN email notification, or on the_**_PCN Customized Portal._**|**List of Affected Parts:**<br>**_Note:_**_Only the standard (off the shelf) part numbers are listed in the parts list.  Any custom parts affected by this PCN are shown in the customer_<br>_specific PCN addendum in the PCN email notification, or on the_**_PCN Customized Portal._**|
|---|---|---|
|**Current Part Number**|**New Part Number**|**Qualification Vehicle**|
|MMBT3906LT1G<br>~~De~~|#NONE<br>~~De~~|MMBT2907ALT1G<br>~~De~~|
|MMBT4403LT1G<br>~~Ge~~|#NONE<br>~~Ge~~|MMBT2907ALT1G<br>~~Ge~~|
|MMBT2907ALT1G<br>~~Ge~~|#NONE<br>~~Ge~~|MMBT2907ALT1G<br>~~Ge~~|
|MMBT2222LT1G<br>~~Ge~~|#NONE<br>~~Ge~~|BC817-40LT3G<br>~~Ge~~|
|BCW66GLT3G<br>~~Ge~~|#NONE<br>~~Ge~~|BC817-40LT3G<br>~~Ge~~|
|BCW66GLT1G<br>~~Ge~~|#NONE<br>~~Ge~~|BC817-40LT3G<br>~~Ge~~|
|BC847CLT3G<br>~~Ge~~|#NONE<br>~~Ge~~|BC817-40LT3G<br>~~Ge~~|
|BC847CLT1G<br>~~Ge~~|#NONE<br>~~Ge~~|BC817-40LT3G<br>~~Ge~~|
|BC847BLT3G<br>~~eG~~|#NONE<br>~~eG~~|BC817-40LT3G<br>~~eG~~|
|BC847BLT1G<br>~~Ge~~|#NONE<br>~~Ge~~|BC817-40LT3G<br>~~Ge~~|
|BC847ALT1G<br>~~Ge~~|#NONE<br>~~Ge~~|BC817-40LT3G<br>~~Ge~~|
|MMBT4126LT3G<br>~~Ge~~|#NONE<br>~~Ge~~|MMBT2907ALT1G<br>~~Ge~~|
|MMBT4126LT1G<br>~~Ge~~|#NONE<br>~~Ge~~|MMBT2907ALT1G<br>~~Ge~~|
|MMBT4401LT3G<br>~~Ge~~|#NONE<br>~~Ge~~|BC817-40LT3G<br>~~Ge~~|
|BC817-25LT3G<br>~~Ge~~|#NONE<br>~~Ge~~|BC817-40LT3G<br>~~Ge~~|
|MMBT2222ALT3G<br>~~Ge~~|#NONE<br>~~Ge~~|BC817-40LT3G<br>~~Ge~~|
|MMBT3904LT3G<br>~~Ge~~|#NONE<br>~~Ge~~|BC817-40LT3G<br>~~Ge~~|
|BC817-25LT1G<br>~~Ge~~|#NONE<br>~~Ge~~|BC817-40LT3G<br>~~Ge~~|
|BC817-40LT1G<br>~~eG~~|#NONE<br>~~eG~~|BC817-40LT3G<br>~~eG~~|
|MMBT4401LT1G<br>~~Rs~~|#NONE<br>~~Rs~~|BC817-40LT3G<br>~~Rs~~|
|MMBT3904LT1G<br>~~Rs~~|#NONE<br>~~Rs~~|BC817-40LT3G<br>~~Rs~~|
|MMBT2222ALT1G<br>~~Rs~~|#NONE<br>~~Rs~~|BC817-40LT3G<br>~~Rs~~|
|BC817-40LT3G<br>~~Rs~~|#NONE<br>~~Rs~~|BC817-40LT3G<br>~~Rs~~|
|MMBT4403LT3G<br>~~Rs~~|#NONE<br>~~Rs~~|MMBT2907ALT1G<br>~~Rs~~|
|MMBT2907ALT3G<br>~~Rs~~|#NONE<br>~~Rs~~|MMBT2907ALT1G<br>~~Rs~~|
|MMBT3906LT3G<br>~~es~~|#NONE<br>~~es~~|MMBT2907ALT1G<br>~~es~~|



TEM001790 Rev. G 

Page 3 of 3

Updated at March 24, 2026

onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.

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