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BC847CE6327HTSA1
Bipolar (BJT) Single Transistor, NPN, 45 V, 100 mA, 330 mW, SOT-23, Surface Mount
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single Bipolar Junction Transistors - BJT
- Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:250MHz; Power Dissipation Pd:330mW; DC Collector Current:100mA; DC Current Gain hFE:110hFE;
- MSL: -
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: -
- Qualification: AEC-Q101
- Power Dissipation: 330mW
- Transistor Mounting: Surface Mount
- Transistor Polarity: NPN
- Transition Frequency: 250MHz
- Transistor Case Style: SOT-23
- DC Current Gain hFE Min: 110hFE
- Operating Temperature Max: 150°C
- Continuous Collector Current: 100mA
- Collector Emitter Voltage Max: 45V
| Delivery and price | |
|---|---|
| Units per pack | 24000 |
| Price | 0.036 € |
| Current stock | 1000+ |
| Lead time | 7 days |
Datasheet
NPN Silicon AF Transistors
BC 846 ... BC 850
## Features
- @ For AF input stages and driver applications applications
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driver applications applications d6<br>voltage<br> and 15 kHz 15 kHz kHz RX 2<br>BCBC 856,859, BCBC 857,860BC 856,859, BCBC 857,860 856,859, BCBC 857,860859, BCBC 857,860 BCBC 857,860BC 857,860 857,860 (PNP) SKa 2<br>{ YPSOS16t<br>**----- End of picture text -----**<br>
- @ High current gain
- @ Low collector-emitter saturation voltage @ Low noise between 30 Hz and 15 kHz 15 kHz kHz @ Complementary types: BCBC 856,859, BCBC 857,860BC 856,859, BCBC 857,860 856,859, BCBC 857,860859, BCBC 857,860 BCBC 857,860BC 857,860 857,860
|Type|Marking|OrderingCode<br>(tapeand reel)|Pin <br>1|Configuration |Package’)<br>2<br>3|
|---|---|---|---|---|
|BC846A|1As|Q62702-C1772||C |SOT-23|
|BC 846 B|iBs|Q62702-C1746|||
|BC 847A|1Es|Q62702-C1884|||
|BC 847B|1Fs|Q62702-C1687|||
|BC 847C|1Gs|Q62702-C1715|||
|BC 848A|1Js|Q62702-C1741|||
|BC 848 B|1Ks|Q62702-C1704|||
|BC 848C|1Ls|Q62702-C1506|||
|BC 849 B|2Bs|Q62702-C1727|||
|BC 849 C|2Cs|Q62702-C1713|||
|BC 850 B|2Fs|Q62702-C1885|||
|BC850C|2Gs|Q62702-C1712|||
> 1)For detailed information see chapter Package Outlines.
Semiconductor Group
475
04.96
SIEMENS
BC 846 ... BC 850
## Maximum Ratings
|Maximum Ratings||||
|---|---|---|---|
|Parameter||Values<br>BC 846 |BC 847 |BC 848<br>BC850 |BC 849|Unit|
|Total power dissipation, Ts|=71 °C|330|mw|
|Junction ternperature||150|‘Cc|
|Storage temperature range||-65... + 150||
|ThermalResistance||||
1)Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mm/6 cm? Cu. Semiconductor Group 476
BC 846 ... BC 850
## SIEMENS
Electrical Characteristics at 7a = 25 25 °C, unless otherwise specified.
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at 7a = 25 25 °C, unless otherwise specified. ;<br>_ [min |typ. [max |<br>DC characteristics<br>Collector-emitter breakdown voltage Vieryceo Vv<br>Ic=10mA BC 846 65 ~<br>BC 847, BC 850 45 _<br>BC 848, BC 849 30 ~<br>Collector-base breakdown voltage Viaryceo<br>Ic=10yA BC 846 80<br>BC 847, BC 850 50<br>BC 848, BC 849 30<br>Collector-emitter breakdown voltage Visryces<br>Ic =10 pA, Vac= 0 BC 846 80<br>BC 847, BC 850 50<br>BC 848, BC 849 30<br>Emitter-base breakdown voltage V(BR)EBO<br>le=1yA BC 846, BC 847 6<br>BC 848, BC 849, BC 850 5<br>Collector cutoff current Tego<br>Ves = 30 V 15 nA<br>Vcp = 30 V, Ta = 150 °C 5 pA<br>DC current gain Are -<br>Ie = 10 pA, Vee= 5 V<br>BC 846 A, BC 847 A, BC 848A - 140 |- ;<br>BC 846B... BC 850B - 250 |- i<br>BC 847 C, BC 848 C, BC 849 C, BC 850 C - 480 |-<br>Ic=2 mA, Voe=5V<br>BC 846 A, BC 847 A, BC 848A 110 180 | 220<br>BC 846B ... BC 850B i 200 {290 | 450<br>BC 847 C, BC 848 C, BC. 849 C, BC 850 C 420 | 520 800<br>Collector-emitter saturation voltage") Vesat mV<br>Ic= 10 MA, J2=0.5 mA 90 250<br>Ic = 100 mA, fe = 5 MA 200 =| 600<br>Base-emitter saturation voltage”) Veesat<br>Ic = 10mA, fe =0.5 mA 700 «| -<br>Ic= 100 mA, J2=5 mA 900 -<br>Base-emitter voltage Veeton)<br>Io= 2mMA, Vee=5V 580 700<br>Ic =10mMA, Vee=5V - 770<br>**----- End of picture text -----**<br>
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DPulse test: 1s 300 us, D= 2 %.
.
Semiconductor Group
477
BC 846 ... BC 850
## SIEMENS
Electrical Characteristics at Ts = 25 °C, unless otherwise specified. _
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_ min. |typ. | max. |<br>AC characteristics<br>Transition frequency ff 250 MHz<br>Ic = 20 MA, Vee= 5 V, f= 100 MHz<br>Output capacitance Cobo 3 pF<br>Vca= 10 V, f=1MHz<br>Input capacitance Coo<br>Ves = 0.5 V, f= 1 MHz<br>Short-circuit input impedance ite kQ<br>Ico=2MA, Vee=5 V, f= 1 KHz<br>BC 846 A... BC 848A 2.7<br>BC 846 B... BC 850B 4.5<br>BC 847 C ...BC 850C 8.7<br>Open-circuit reverse voltage transfer ratio hie 10-4<br>Ic=2 mA, Vee =5 V, f= 1 kHz<br>BC 846A... BC 848A 1.5<br>BC 846B... BC 850B 2.0<br>BC 847C ... BC 850 C 3.0<br>Short-circuit forward current transfer ratio hate -<br>Ic=2mMA, Vee =5V,f= 1 kHz<br>BC 846A... BC 848A 200<br>BC 8468... BC 850B 330<br>BC 847 C ... BC 850 C 600<br>Open-circuit output admittance hzee pS<br>Ie=2mA, Vee=5V, f= 1 kHz<br>BC 846A... BC 848A 18<br>BC 846 B ... BC 850B 30<br>BC 847... BC 850C 60<br>Noise figure | F dB<br>Ic = 0.2 mA, Vce = 5 V, Rs = 2 kQ |<br>f= 30 Hz...15 kHz BC 849 1.4 4<br>BC 850 1.4 3<br>f=1 kHz,af = 200 Hz BC 849 1.2 4<br>BC 850 1.0 4<br>Equivalent noise voltage Vn 0.135 | pV<br>Ico =0.2 mA, Vee =5 V, Rs= 2 kQ<br>f= 10Hz ... 50 Hz<br>BC 850<br>**----- End of picture text -----**<br>
Semiconductor Group
478
SIEMENS
BC 846 ... BC 850
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Total power dissipation Pia = f (Ta*; Ts) Collector-base capacitance Cosco = f (Vcx0)<br>* Package mounted on epoxy Emitter-base capacitance Ceso = (Vexo)<br>400 [BC] [846...850] EMPOO360 12 BC 846...850 EHPOO361<br>Py THM)<br>WN ATT TT (Coe) NET EET<br>al tN\s\ Hf NCTMN TT<br>20 Ni NOTIN<br>TETETEP RAN\ TTP 6OSI| CORTne<br>‘00 N PT FT]<br>THT Joon on<br>; ) TTT \N oeTM LUEUT<br>0 50 100 *c 150 107! 5 10° v.10!<br>—» [sk ——>Kea (Yea0)<br>Permissible pulse load Pio mex/Prot oc = f (te) TanswencE > frequency ft =f (Ic)<br>FotmxP. (0° BE)ae es aE t o ae MHz10 anoo eh | a<br>Prtoe 5 Ethd mall. p= t ae OnTT LT<br>ai ti.i eeeest ee<br>NS ( | SUIT)cra<br>Ne 32 ll ST<br>10" il! stl Se ell SCI CoCoTE eT<br>5 SH)GRICEBho Ste SSO BRTH EeCT Tr<br>oe CUTTSTT ocan<br>107 1073 1074 107 197? ~s 10° 107" 5 10° 5 108) mA 102<br>~——m |, —- kh<br>**----- End of picture text -----**<br>
Semiconductor Group
479
BC 846 ... BC 850
## SIEMENS
Collector cutoff current cao = cao = = £ (Ta) Vea = 30 V V
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Collector cutoff current cao = cao = = £ (Ta) Collector-emitter saturation voltage<br>Vea = 30 V V Ic = f (Vctsa), hre= 20<br>194BCX 13__EHP 10) SSS<br>TeoW=s============= ma<br>ERT AAA tot<br>a PEP tt tt tt et Ie TA TOT<br>ot TTeet Hift 2c<br>5 =—_______-_.———eeeSEDSaEEEeanareee [eA] de 10) |HEF]222SWHE Sorel HH| | HH| | |<br>SSSSSee528e0<br>4a 5 Gee eee [er]<br>ot LLLP; Zey | | orco<br>§ =====>===>.===== THTtt TT TT<br>Seea EE 0 HUH TTT<br>oreetLLFa LEAL ESTeyA TT 105 Hee=:Se SS==S=====en ee ee ee ee ee ee<br>5 SES PO<br>EEA tit | TT TT Tt<br>ERP 4eee ATT PPT<br>yo LETT ELT ELE 10"<br>0 50 100 °C 150 0 01 #02 O03 04 V 05<br>—wh — Vee set<br>DC current gain Are = f f (Ic) Base-emitter saturation voltage<br>Voe=5V Ic = f (Votsat), hee = 20<br>108 10? oy<br>5 [100°CCaer)ont (pomTLL S| Ooo ot | Ca Rom eePeeeeoe oe oe 2SVoe ee Vteee Soe<br>h|© Fesec)caelciCSS| c SREBHAAie<br>0 TT wo LLL bs [SELL]<br>5 eeStiCOT Sr eet See 5 Eepeee2ee ee me eee ee ee<br>mana Ht ma A rtPET TTTET [Eta] Pie gg tTTTTt<br>0SMe LLLELL<br>5 CTHCC a a<br>meee Cte Tr PT ti tt<br>a HHH LTT [TTT]<br>oo MC Ty<br>1072 5§10-' 510° LT510' mA 10? ot0 O2LUE04 06 08 V1.2<br>— h —_— Vor got<br>**----- End of picture text -----**<br>
DC current gain Are = f f (Ic) Voe=5V
Semiconductor Group
480
SIEMENS
BC 846 ... BC 850
h parameter he = f (/c) normalized Vee =5V
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h parameter he = f (Vce) normalized<br>Ic=2mA<br>2.0 §C 846...850 EKP00369<br>BEC ame<br>A, tr tt tt ett a<br>PS pCOREEEEEEEELCPaREEEEEEEELCPaELCPaPa<br>SPR\!\! LI<br>1.0 PSL =<br>POPSET Peer<br>id PTTaa TTT TT TT TT TT TT<br>ERE<br>HE<br>see<br>0 10 20 23V «30<br>™ Veg<br>**----- End of picture text -----**<br>
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102 BC 346...850 EHPOO363 2.0 §C 846...850 EKP00369<br>hy ° EEE BEC ame<br>| A, tr tt tt ett a<br>{ PS RECCTMMe==1 SSE SS SSSESES:(TT| PS pCOREEEEEEEELCPaREEEEEEEELCPaELCPaPa<br>5 TaN— etSoe td Ee SPR\!\! LI<br>ma 210 ee 1.0 PSL =<br>wo, EIS POPSET Peer<br>§ et e SeoN id PTTaa TTT TT TT TT TT TT<br>ges ERE<br>Pee UTIL HE<br>vot LL TH see<br>10°! 5 100 mA 10! 0 10 20 23V «30<br>—~ I, ™ Veg<br>Noise figure F = f (Vce) Noise figure F = f (/)<br>Ic =0.2 mA, Rs = 2 kQ, f= 1 KHZ Ic = 0.2 MA, Vee = 5 V, Rs = 2 kQ<br>20 BC_B46...850 €HPO0370 20 © 846...850 EHPO0371<br>Ra BBL |<br>CO CO a8 TU UT<br>(CEHa ¢ CHRCTET TT<br>| CERES | Ca| | |<br>BhHH| || | |)| |<br>ro UT<br>RtBEI PeraOTAAT CT|<br>EH| | HHTaT A<br>5TTHt BBAIIil! POTNTNY Tt<br>AHCC aBN A|<br>A |<br>See Il OTITt<br>g LOAM TT gt LUT CT TTI TTT<br>107" 5108 to". ve 10? 10-2 407! ~~ 108 10° kHz 102<br>—- ¥, —~f<br>**----- End of picture text -----**<br>
Semiconductor Group
481
BC 846 ... BC 850
## SIEMENS
Noise figure F = f (Ic) Vee = 5 V, f= 120 Hz
Noise figure F = f (Ic) Vee = 5 V, f= 1 kHz
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20 BC 846...850 EHPOO372 20 BC 646...850 EHPOOS73<br>a8 GAL |, || a | | |<br>TTA 48<br>AL | | | |<br>F mil 1 | a | F |<br>15 BAA 15 |||<br>BG PT RB | RS A<br>PLASa1MOF 100kKQd10kO/ | TAA TL A<br>AU AY, AN@IIII | R=IMO FLOOk TOOT<br>NT Ai || | A) ih,<br>10 GL! LSYa 10 ANANET !<br>UN TTI AT NBT<br>A TT TAT #1500 0) OMNI CPT TTT<br>OMVANTIN ATTATT PTTTT nkOUNTTUTVAA T UT TATTT 7 aAL<br>5 mil "| 5 LUI TT ZT |<br>TADSUTNE aT MB aA A Al<br>NU NeTTT ako LT ADeUATIN INT T_T Tat|71500 0]<br>ee | S| Pa A eter tn | UT<br>0 PUTTT TTT 0 Petr Pe Ib CT HE<br>1073 1072 1o7! 10° mA 10! to-5 1072 1071 109 mA 10!<br>— |, el<br>Noise figure F = f (Ic)<br>Vee= 5 V, f= 10 kHz<br>20 BC 846...850 EHPOO374<br>BB|)<br>; A<br>BLE)<br>F TTa<br>15 BA<br>ALI<br>a|<br>A Fo<br>BA LS|<br>10 NB A)<br>TT ysoon TTI TTI [oxo y<br>BG Tt! |<br>0h | | Bil<br>BB a Pl<br>5 UONINOATT PA<br>eiKONLCTPNATU Lai<br>SU ablATTA es|<br>0 eee. ee || ll<br>10-5 1072107" 109 ~ma 10!<br>—s i<br>**----- End of picture text -----**<br>
Semiconductor Group
482
Updated at March 24, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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