BC847CDXV6T1G

**Characteristic (One Junction Heated) Symbol Max Unit** Total Device Dissipation, (Note 1) PDD TA = 25A = 25 = 25 ° C 357 mW Derate above 25 ° C 2.9 mW/ ° C Thermal Resistance, R JA 350 ° C/W Junction-to-Ambient (Note 1) ~~TA~~ 

## BC847CDXV6T1G, SBC847CDXV6T1G, BC847CDXV6T5G, BC848CDXV6T1G 

## Dual General Purpose Transistors 

## **NPN Duals** 

These transistors are designed for general purpose amplifier applications. They are housed in the SOT−563 which is designed for low power surface mount applications. 

## **Features** 

- AEC−Q101 Qualified and PPAP Capable 

## **http://onsemi.com** 

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(3) (2) (1)<br>Q1 Q2<br>cy le<br>(4) (5) (6)<br>BC847CDXV6T1<br>**----- End of picture text -----**<br>


- S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements 

- These are Pb−Free Devices 

**MAXIMUM RATINGS Rating Symbol BC847 BC848 Unit** Collector − Emitter Voltage VCEO 45 30 V Collector − Base Voltage VCBO 50 30 V Emitter − Base Voltage VEBO 6.0 5.0 V Collector Current − Continuous IC 100 100 mAdc ~~SE~~ Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 

## **THERMAL CHARACTERISTICS** 

**Characteristic (One Junction Heated) Symbol Max Unit** Total Device Dissipation, (Note 1) PDD TA = 25A = 25 = 25 ° C 357 mW Derate above 25 ° C 2.9 mW/ ° C Thermal Resistance, R JA 350 ° C/W Junction-to-Ambient (Note 1) **Characteristic (Both Junctions Heated) Symbol Max Unit** Total Device Dissipation, (Note 1) PD TA = 25 ° C 500 mW Derate above 25 ° C 4.0 mW/ ° C Thermal Resistance, R JA 250 ° C/W Junction-to-Ambient (Note 1) ~~re~~ Junction and Storage TJ, Tstg −55 to +150 ° C Temperature Range 1. FR−4 @ Minimum Pad 

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6<br>1<br>SOT−563<br>CASE 463A<br>**----- End of picture text -----**<br>


## **MARKING DIAGRAMS** 

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1x M<br>1<br>1x = Device Code<br>x = G or M<br>M = Date Code<br>= Pb−Free Package<br>**----- End of picture text -----**<br>


(Note: Microdot may be in either location) 

**ORDERING INFORMATION** See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. 

Publication Order Number: **BC847CDXV6T1/D** 

**1** 

© Semiconductor Components Industries, LLC, 2011 **November, 2011 − Rev. 4** 

**BC847CDXV6T1G, SBC847CDXV6T1G, BC847CDXV6T5G, BC848CDXV6T1G** 

## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted)||||||
|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**||||||
|Collector−Emitter Breakdown Voltage<br>(IC= 10 mA)<br>BC847CDXV6T1, SBC847CDXV6<br>BC848CDXV6T1|V(BR)CEO|45<br>30|−<br>−|−<br>−|V|
|Collector−Emitter Breakdown Voltage<br>(IC= 10�A, VEB= 0)<br>BC847CDXV6T1, SBC847CDXV6<br>BC848CDXV6T1|V(BR)CES|50<br>30|−<br>−|−<br>−|V|
|Collector−Base Breakdown Voltage<br>(IC= 10�A)<br>BC847CDXV6T1, SBC847CDXV6<br>BC848CDXV6T1|V(BR)CBO|50<br>30|−<br>−|−<br>−|V|
|Emitter−Base Breakdown Voltage<br>(IE= 1.0�A)<br>BC847CDXV6T1, SBC847CDXV6<br>BC848CDXV6T1|V(BR)EBO|6.0<br>5.0|−<br>−|−<br>−|V|
|Collector Cutoff Current (VCB= 30 V)<br>(VCB= 30 V, TA= 150°C)|ICBO|−<br>−|−<br>−|15<br>5.0|nA<br>�A|
|**ON CHARACTERISTICS**||||||
|DC Current Gain<br>(IC= 10�A, VCE= 5.0 V)<br>(IC= 2.0 mA, VCE= 5.0 V)|hFE|−<br>420|270<br>520|−<br>800|−|
|Collector−Emitter Saturation Voltage (IC= 10 mA, IB= 0.5 mA)<br>Collector−Emitter Saturation Voltage(IC= 100 mA, IB= 5.0 mA)|VCE(sat)|−<br>−|−<br>−|0.25<br>0.6|V|
|Base−Emitter Saturation Voltage (IC= 10 mA, IB= 0.5 mA)<br>Base−Emitter Saturation Voltage(IC= 100 mA, IB= 5.0 mA)|VBE(sat)|−<br>−|0.7<br>0.9|−<br>−|V|
|Base−Emitter Voltage (IC= 2.0 mA, VCE= 5.0 V)<br>Base−Emitter Voltage(IC= 10 mA, VCE= 5.0 V)|VBE(on)|580<br>−|660<br>−|700<br>770|mV|
|**SMALL−SIGNAL CHARACTERISTICS**||||||
|Current−Gain − Bandwidth Product<br>(IC= 10 mA, VCE= 5.0 Vdc, f = 100 MHz)|fT|100|−|−|MHz|
|Output Capacitance (VCB= 10 V, f = 1.0 MHz)|Cobo|−|−|1.5|pF|
|Noise Figure<br>(IC= 0.2 mA, VCE= 5.0 Vdc, RS= 2.0 k�,f = 1.0 kHz, BW = 200 Hz)|NF|−|−|10|dB|



## **ORDERING INFORMATION** 

|**ORDERING INFORMATION**||||
|---|---|---|---|
|**Device**|**Specific Marking**|**Package**|**Shipping**†|
|BC847CDXV6T1G|1G|SOT−563<br>(Pb−Free)|4000 Units / Tape & Reel|
|SBC847CDXV6T1G||||
|BC847CDXV6T5G|||8000 Units / Tape & Reel|
|BC848CDXV6T1G|1L|SOT−563<br>(Pb−Free)|4000 Units / Tape & Reel|



†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

**http://onsemi.com** 

**2** 

**BC847CDXV6T1G, SBC847CDXV6T1G, BC847CDXV6T5G, BC848CDXV6T1G** 

## **TYPICAL CHARACTERISTICS** 

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1000 0.30<br>900 150 ° C VCE = 1 V 0.25 IC/IB = 20<br>800<br>150 ° C<br>700<br>0.20<br>600 25 ° C<br>500 0.15 25 ° C<br>400<br>−55 ° C 0.10<br>300<br>−55 ° C<br>200<br>0.05<br>100<br>0 0<br>0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>Figure 1. DC Current Gain vs. Collector Figure 2. Collector Emitter Saturation Voltage<br>Current vs. Collector Current<br>1.1 1.2<br>1.0 IC/IB = 20 1.1 VCE = 5 V<br>1.0<br>0.9<br>0.8 −55 ° C 0.9 −55 ° C<br>0.8 25 ° C<br>0.7<br>25 ° C 0.7<br>0.6<br>0.6 150 ° C<br>0.5<br>0.5<br>0.4 150 ° C 0.4<br>0.3 0.3<br>0.2 0.2<br>0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>, DC CURRENT GAIN , COLLECTOR−EMITTER<br>FE<br>h<br>SATURATION VOLTAGE (V)<br>CE(sat)<br>V<br>, BASE−EMITTER<br>BE(sat)<br>V , BASE−EMITTER VOLTAGE (V)<br>SATURATION VOLTAGE (V)<br>BE(on)<br>V<br>**----- End of picture text -----**<br>


**Figure 3. Base Emitter Saturation Voltage vs. Collector Current** 

**Figure 4. Base Emitter Voltage vs. Collector Current** 

**http://onsemi.com** 

**3** 

**BC847CDXV6T1G, SBC847CDXV6T1G, BC847CDXV6T5G, BC848CDXV6T1G** 

## **TYPICAL CHARACTERISTICS** 

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2.0 1.0<br>TA = 25°C -55°C to +125°C°C to +125°CC to +125°C°CC<br>1.2<br>1.6<br>IC = 200 mA 1.6<br>1.2<br>IC = IC = IC = 50 mA IC = 100 mA<br>2.0<br>10 mA 20 mA<br>0.8<br>2.4<br>0.4<br>2.8<br>0<br>0.02 0.1 1.0 10 20 0.2 1.0 10 100<br>IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)C, COLLECTOR CURRENT (mA), COLLECTOR CURRENT (mA)<br>Figure 5. Collector Saturation Region Figure 6. Base−Emitter Temperature Coefficient<br>10 400<br>300<br>7.0 T A  = 25°C<br>200<br>5.0 C ib<br>3.0 10080 VTACE = 25 = 10 V°C<br>Cob<br>60<br>2.0<br>40<br>30<br>1.0 20<br>0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 20 40 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50<br>VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc)<br>C)°°<br>VCE, COLLECTOR-EMITTER VOLTAGE (V) VB, TEMPERATURE COEFFICIENT (mV/<br>θ<br>C, CAPACITANCE (pF)<br>f�, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)T<br>**----- End of picture text -----**<br>


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1.0<br>-55°C to +125°C°C to +125°CC to +125°C°CC<br>1.2<br>1.6<br>2.0<br>2.4<br>2.8<br>0.2 1.0 10 100<br>IC, COLLECTOR CURRENT (mA)C, COLLECTOR CURRENT (mA), COLLECTOR CURRENT (mA)<br>C)°°<br>VB, TEMPERATURE COEFFICIENT (mV/<br>θ<br>**----- End of picture text -----**<br>


**Figure 7. Capacitances** 

**Figure 8. Current−Gain − Bandwidth Product** 

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1<br>100 mS 10 mS<br>1 mS<br>1 S<br>0.1<br>Thermal Limit<br>0.01<br>0.001<br>0.1 1 10 100<br>VCE, COLLECTOR EMITTER VOLTAGE (V)<br>, COLLECTOR CURRENT (A)<br>IC<br>**----- End of picture text -----**<br>


**Figure 9. Safe Operating Area** 

**http://onsemi.com** 

**4** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

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6<br>1<br>**----- End of picture text -----**<br>


## **SOT−563, 6 LEAD** CASE 463A ISSUE H 

## DATE 26 JAN 2021 

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SCALE 4:1<br>**----- End of picture text -----**<br>


## **DOCUMENT NUMBER:** 

## **98AON11126D** 

## **DESCRIPTION: SOT−563, 6 LEAD** 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. 

**PAGE 1 OF 2** 

ON Semiconductor and          are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 

www.onsemi.com 

© Semiconductor Components Industries, LLC, 2019 

## **SOT−563, 6 LEAD** CASE 463A ISSUE H 

## DATE 26 JAN 2021 

## **GENERIC MARKING DIAGRAM*** 

XX M 1 

XX = Specific Device Code M = Month Code . = Pb−Free Package 

- *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ " ”, may or may not be present. Some products may not follow the Generic Marking. 

## **DOCUMENT NUMBER:** 

**98AON11126D** 

**DESCRIPTION: SOT−563, 6 LEAD** 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. 

**PAGE 2 OF 2** 

ON Semiconductor and          are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 

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