BC847CDLP-7

**BC847CDLP 45V DUAL NPN SMALL SIGNAL TRANSISTOR** 

## **Features** 

- BVCEO > 45V 

- Low profile 0.4mm high package for thin applications 

- Ultra-Small Surface Mount Package 

- **Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

## **Mechanical Data** 

- Case: X2-DFN1310-6 

- Nominal package height: 0.4mm 

- Case Material: Molded Plastic, “Green” Molding Compound. 

- UL Flammability  Classification Rating 94V-0 

- Moisture Sensitivity:  Level 1 per J-STD-020 

- Terminals: Finish - NiPdAu, Solderable per MIL-STD-202, Method 208 **e4** 

- Weight: 0.0015 grams (approximate) 

X2-DFN1310-6 

Top View 

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C B E<br>E B C<br>Device Schematic<br>Top View<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Part Number**|**Marking**|**Reel Size(inches)**|**Tape Width(mm)**|**Quantity per Reel**|
|---|---|---|---|---|
|BC847CDLP-7|1M|7|8|3000|



- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

   2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html. 

## **Marking Information** 

1M (Top View) 

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1M = Product Type Marking Code<br>**----- End of picture text -----**<br>


1 of 6 **www.diodes.com** 

BC847CDLP Document number: DS30817  Rev. 7 - 2 

May 2013 © Diodes Incorporated 

**BC847CDLP** 

## **Maximum Ratings** (@TA = +25°C unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C unless otherwise specified.)A = +25°C unless otherwise specified.)= +25°C unless otherwise specified.)|(@TA = +25°C unless otherwise specified.)A = +25°C unless otherwise specified.)= +25°C unless otherwise specified.)|||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Collector-Base Voltage|VCBO|50|V|
|Collector-Emitter Voltage|VCEO|45|V|
|Emitter-Base Voltage|VEBO|6|V|
|Collector Current|IC|100|mA|



**Thermal Characteristics – Total Device** (@TA = +25°C unless otherwise specified.) 

|**Thermal Characteristics – Total Device – Total Device**(@TA = +25°C unless otherwise specified.)A = +25°C unless otherwise specified.)= +25°C unless otherwise specified.)|(@TA = +25°C unless otherwise specified.)A = +25°C unless otherwise specified.)= +25°C unless otherwise specified.)|(@TA = +25°C unless otherwise specified.)A = +25°C unless otherwise specified.)= +25°C unless otherwise specified.)||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Power Dissipation (Note 5) Total Device|PD|350|mW|
|Thermal Resistance, Junction to Ambient(Note 5)|RθJA|357|°C/W|
|Operating and Storage Temperature Range|TJ, TSTG|-65 to +150|°C|



Note: 5. For a device surface mounted on minimum recommended pad layout FR-4 PCB with single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 

## **Thermal Characteristics – Total Device** 

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350 rT KR<br>Note 5<br>300 eePftft<br>250 eeeeeeNT<br>200 eeee eeee<br>150<br>poof EE NG<br>100 eeeeeeee eees ee<br>50 R JA [= 357] °C/W<br>KY<br>0 PfFNewe<br>0 25 50 75 100 125 150<br>TA, AMBIENT TEMPERATURE (°C)<br>Figure 1  Power Dissipation vs. Ambient Temperature<br>, POWER DISSIPATION (mW)<br>D<br>P<br>**----- End of picture text -----**<br>


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BC847CDLP Document number: DS30817  Rev. 7 - 2 

May 2013 © Diodes Incorporated 

**BC847CDLP** 

**Electrical Characteristics** (@TA = +25°C unless otherwise specified.) 

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||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|ID|Characteristic (Note 6)|Sy|ID|mbol|ID|Min|I|Typ|(OR|Max|Unit|I|Test Condition|
|en|Collector-Base Breakdown Voltage|BV|ID|CBO|I|50|I|—|I|—|OO|V|(OO|IC = 100µA, IB = 0|
|Pe|Collector-Emitter Breakdown Voltage|BVCEO|45|—|—|V|IC = 10mA, IB = 0|
|nD|Emitter-Base Breakdown Voltage|DD|BVEBO|I|6|I|—|—|(OO|V|(OO|IE = 100µA, IC = 0|
|I|DC Current Gain|(ORI|hFE|I|420|650|(I|800|—|(OO|VCE = 5.0V, IC = 2.0mA|
|55|250|IC = 10mA, IB = 0.5mA|
|ee|Collector-Emitter Saturation Voltage|VCE(sat)|—|130|600|mV|IC = 100mA, IB = 5.0mA|
|700|IC = 10mA, IB = 0.5mA|
|—rr—i—isdYS|Base-Emitter Saturation Voltage|VBE(sat)|ee|ee|—|ee|900|ee|—|ee|mV|IC = 100mA, IB = 5.0mA|
|580|660|700|VCE = 5.0V, IC = 2.0mA|
|Base-Emitter Voltage|VBE(on)|—|—|770|mV|VCE = 5.0V, IC = 10mA|
|a|ee|es|ee|ee|
|I|Collector-Cutoff Current|ICES|—|—|15|nA|VCE = 50V|
|Collector-Cutoff Current|ICBO|—|—|15|nA|VCB = 30V|
|—rr—i—isdYS(RR|—|TD|I|—|(OU|5|µA|(OO|VCB = 30V, TA = +150°C|
|VCE = 5.0V, IC = 10mA,|
|es|Gain Bandwidth Product|fT|100|—|—|MHz|f = 100MHz|
|Collector-Base Capacitance|CCBO|—|2.0|—|pF|VCB = 10V, f = 1.0MHz|
|SC|eeeslceeelee|eele|ef|
|Note:|6. Measured under pulsed conditions. Pulse width  300µs. Duty cycle   2%.|

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0.25 1,400<br>IB = 8mA VCE = 5V<br>IB = 10mA 1,200<br>0.20 ye On 01<br>1,000 TA = 150°C<br>IB = 6mA<br>an ba LL<br>0.15 —— CTT TAN TTI<br>7 —S 800 cot TA = 85°C AIT<br>IB = 4mA<br>[pS 600 At T A  = 25°C SINT<br>0.10 | a6 5 I B  = 2mA a Coo ANE<br>400<br>0.05 as cn eee  a TA = -55°C<br>200<br>0 0 CFT TT<br>PEL LL || |<br>0 1 2 3 4 5 6 0.1 1 10 100<br>VCE, COLLECTOR-EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (mA)<br>Figure 2  Typical Collector Current vs. Collector-Emitter Voltage Figure 3  Typical DC Current Gain vs. Collector Current<br>, DC CURRENT GAIN<br>FE<br>h<br>, COLLECTOR CURRENT (A)<br>IC<br>**----- End of picture text -----**<br>


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BC847CDLP Document number: DS30817  Rev. 7 - 2 

May 2013 © Diodes Incorporated 

**BC847CDLP** 

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0.25 1.0<br>VCE = 5V<br>IC/IB = 10 0.9<br>0.20 ivy IELILTE )cet 0.8 te-- T A  = -55°C  rt<br>0.7 T A = 25°C<br>0.15 SL) T A  = 150°C 0.6 ca<br>0.5<br>0.10 SEL T A = 85°C j 0.4 TMC TA = 85°C T A  = 150°C<br>Mi | 0.3 aac<br>0.05 0.2<br>TA = -55°C 0.1<br>TA = 25°C<br>0 0<br>Tien Ue CCE CTT COE CT<br>0.01 0.1 1 10 100 0.01 0.1 1 10 100<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Figure 4  Typical Collector-Emitter Saturation Voltage  Figure 5  Typical Base-Emitter Turn-On Voltage<br>vs. Collector Current vs. Collector Current<br>1.2 14<br>IC/IB = 10 f = 1MHz<br>1.0 TA = 25°C 12<br>HHH TA = -55°C a  ule 10 | | ft |<br>0.8<br>|SAE al htft ft<br>8<br>ie a Wwe<br>0.6 Cibo<br>Cee 6 rN Tf<br>0.4 FC eT T A  = 85°C 4<br>0.2 cee TA = 150 ge" ° C 2 oo C obo<br>00.01 SaatUVTI 0.1 EIN 1 EINE 10 ETill 100 0 0 ene| 5 10 tT 15 20 25<br>IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (V)<br>Figure 6  Typical Base-Emitter Saturation Voltage  Figure 7  Typical Capacitance Characteristics<br>vs. Collector Current<br>300<br>VCE = 5V<br>f = 100MHz<br>250<br>ae<br>200<br>fo<br>150<br>po<br>EEN<br>100 PL<br>50 ERR<br>0 ett<br>0 10 20 30 Ee 40 te 50 60 70<br>IC, COLLECTOR CURRENT (mA)<br>Figure 8  Typical Gain-Bandwidth Product<br>vs. Collector Current<br>, COLLECTOR-EMITTER<br>SATURATION VOLTAGE (V)<br>CE(SAT)<br>V , BASE-EMITTER TURN-ON VOLTAGE (V)<br>BE(ON)<br>V<br>CAPACITANCE (pF)<br>, BASE-EMITTER SATURATION VOLTAGE (V)<br>BE(SAT)<br>V<br>, GAIN-BANDWIDTH PRODUCT (MHz)<br>fT<br>**----- End of picture text -----**<br>


4 of 6 **www.diodes.com** 

BC847CDLP Document number: DS30817  Rev. 7 - 2 

May 2013 © Diodes Incorporated 

**BC847CDLP** 

## **Package Outline Dimensions** 

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. 

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A1 X2-DFN1310-6<br>A<br>! ! on eo | Dim  [| Min  |{ Max  {| Typ |<br>A   0.40  <br>a A3 ee ee ee<br>a A1  ee 0  0.05  ee 0.02  ee<br>A3    0.13<br>es<br>Re Z o e B ee D2 | b  [| 0.10  {| 0.20  | 0.15  |<br>D  1.25  1.38  1.30<br>d    0.25<br>TU es ee ee<br>E2 | D2  [| 0.30  {| 0.50  [| 0.40  |<br>| E  [| 0.95 1.075 1.00  |{ | |<br>E d e    0.35<br>E2  0.30  0.50  0.40<br>| |ee{|ee{|ee| |<br>L f    0.10<br>, fF) fi, es es<br>1 | L  [| 0.20  |{ 0.30  [| 0.25  |<br>Z    0.05<br>f JL L d L e z es[EJ All Dimensions in mm  ee ee<br>D<br>R0.150<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. 

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G2 X2<br>><br>Y2<br>‘Ol<br>G1<br>b |__| i<br>y ! 5<br>Y1<br>’ im<br>Ai t<br>Heol a X1<br>G3<br>**----- End of picture text -----**<br>


|**Dimensions**|**Value(in mm)**|
|---|---|
|**G1**|0.16|
|**G2**|0.17|
|**G3**|0.15|
|**X1**|0.52|
|**X2**|0.20|
|**Y1**|0.52|
|**Y2**|0.375|
|**a**|0.09|
|**b**|0.06|



5 of 6 **www.diodes.com** 

BC847CDLP Document number: DS30817  Rev. 7 - 2 

May 2013 © Diodes Incorporated 

**BC847CDLP** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending.  Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

A.   Life support devices or systems are devices or systems which: 

1. are intended to implant into the body, or 

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2013, Diodes Incorporated 

**www.diodes.com** 

6 of 6 **www.diodes.com** 

BC847CDLP Document number: DS30817  Rev. 7 - 2 

May 2013 © Diodes Incorporated