BC847BTT1G

## BC847ATT1, BC847BTT1, BC847CTT1 

## General Purpose Transistors 

## **NPN Silicon** 

## **http://onsemi.com** 

These transistors are designed for general purpose amplifier applications. They are housed in the SC−75/SOT−416 package which is designed for low power surface mount applications. 

## **Features** 

- NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

- Pb−Free Packages are Available 

**==> picture [69 x 88] intentionally omitted <==**

**----- Start of picture text -----**<br>
COLLECTOR<br>3<br>1<br>BASE<br>& )<br>2<br>EMITTER<br>**----- End of picture text -----**<br>


**MAXIMUM RATINGS** (TA = 25 ° C) **Rating Symbol Max Unit** Collector−Emitter Voltage VCEO 45 V Collector−Base Voltage VCBO 50 V Emitter−Base Voltage VEBO 6.0 V Collector Current − Continuous IC 100 mAdc ~~es~~ 

3 **CASE 463 SC−75/SOT−416** 2 **STYLE 1** 1 ~~*~~ 

**MARKING DIAGRAM** Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. **THERMAL CHARACTERISTICS** XXM **Characteristic Symbol Max Unit** Total Device Dissipation, PDD FR−4 Board (Note 1) 200 mW XX = Device Code TA = 25A = 25 = 25 ° C M = Date Code Derated above 25 ° C 1.6 mW/ ° C = Pb−Free Package ° (Note: Microdot may be in either location) ~~=a~~ 

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. **THERMAL CHARACTERISTICS** XXM **Characteristic Symbol Max Unit** Total Device Dissipation, PDD FR−4 Board (Note 1) 200 mW XX = Device Code TA = 25A = 25 = 25 ° C M = Date Code Derated above 25 ° C 1.6 mW/ ° C Thermal Resistance, R JA 600 ° C/W Junction−to−Ambient (Note 1) ~~=a~~ Total Device Dissipation, PD FR−4 Board (Note 2) 300 mW TA = 25 ° C Derated above 25 ° C 2.4 mW/ ° C Thermal Resistance, R JA 400 ° C/W Junction−to−Ambient (Note 2) ~~ee~~ Junction and Storage TJ, Tstg −55 to ° C Temperature Range +150 

**ORDERING INFORMATION** See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet. 

1. FR−4 @ min pad. 

2. FR−4 @ 1.0 × 1.0 in pad. 

Publication Order Number: 

**1** 

© Semiconductor Components Industries, LLC, 2014 **November, 2014 − Rev. 3** 

**BC847ATT1/D** 

## **BC847ATT1, BC847BTT1, BC847CTT1** 

## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted)||||||
|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**||||||
|Collector−Emitter Breakdown Voltage<br>(IC= 10 mA)<br>BC847 Series|V(BR)CEO|45|−|−|V|
|Collector−Emitter Breakdown Voltage<br>(IC= 10�A, VEB= 0)<br>BC847 Series|V(BR)CES|50|−|−|V|
|Collector−Base Breakdown Voltage<br>(IC= 10�A)<br>BC847 Series|V(BR)CBO|50|−|−|V|
|Emitter−Base Breakdown Voltage<br>(IE= 1.0�A)<br>BC847 Series|V(BR)EBO|6.0|−|−|V|
|Collector Cutoff Current (VCB= 30 V)<br>(VCB= 30 V, TA= 150°C)|ICBO|−<br>−|−<br>−|15<br>5.0|nA<br>�A|
|**ON CHARACTERISTICS**||||||
|DC Current Gain<br>(IC= 10�A, VCE= 5.0 V)<br>BC847A<br>BC847B<br>BC847C<br>(IC= 2.0 mA, VCE= 5.0 V)<br>BC847A<br>BC847B<br>BC847C|hFE|−<br>−<br>−<br>110<br>200<br>420|90<br>150<br>270<br>180<br>290<br>520|−<br>−<br>−<br>220<br>450<br>800|−|
|Collector−Emitter Saturation Voltage (IC= 10 mA, IB= 0.5 mA)<br>Collector−Emitter Saturation Voltage(IC= 100 mA, IB= 5.0 mA)|VCE(sat)|−<br>−|−<br>−|0.25<br>0.6|V|
|Base−Emitter Saturation Voltage (IC= 10 mA, IB= 0.5 mA)<br>Base−Emitter Saturation Voltage(IC= 100 mA, IB= 5.0 mA)|VBE(sat)|−<br>−|0.7<br>0.9|−<br>−|V|
|Base−Emitter Voltage (IC= 2.0 mA, VCE= 5.0 V)<br>Base−Emitter Voltage(IC= 10 mA, VCE= 5.0 V)|VBE(on)|580<br>−|660<br>−|700<br>770|mV|
|**SMALL−SIGNAL CHARACTERISTICS**||||||
|Current−Gain − Bandwidth Product<br>(IC= 10 mA, VCE= 5.0 Vdc, f = 100 MHz)|fT|100|−|−|MHz|
|Output Capacitance (VCB= 10 V, f = 1.0 MHz)|Cobo|−|−|4.5|pF|
|Noise Figure<br>(IC= 0.2 mA, VCE= 5.0 Vdc, RS= 2.0 k�, f = 1.0 kHz, BW = 200 Hz)|NF|−|−|10|dB|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

**http://onsemi.com** 

**2** 

**BC847ATT1, BC847BTT1, BC847CTT1** 

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2.0 1.0<br>1.5 VTACE = 25 = 10 V°C 0.90.8 TA = 25°C<br>VBE(sat) @ IC/IB = 10<br>1.0 0.7<br>0.8 0.6 VBE(on) @ VCE = 10 V<br>0.5<br>0.6<br>0.4<br>0.4 0.3<br>0.3 0.2<br>0.1 VCE(sat) @ IC/IB = 10<br>0.2 0<br>0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100<br>IC, COLLECTOR CURRENT (mAdc) IC, COLLECTOR CURRENT (mAdc)<br>Figure 1. Normalized DC Current Gain Figure 2. “Saturation” and “On” Voltages<br>2.0 1.0<br>TA = 25°C -55°C to +125°C<br>1.2<br>1.6<br>IC = 200 mA 1.6<br>1.2<br>IC = IC = IC = 50 mA IC = 100 mA<br>2.0<br>10 mA 20 mA<br>0.8<br>2.4<br>0.4<br>2.8<br>0<br>0.02 0.1 1.0 10 20 0.2 1.0 10 100<br>IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>V, VOLTAGE (VOLTS)<br>hFE, NORMALIZED DC CURRENT GAIN<br>C)°<br>VCE, COLLECTOR-EMITTER VOLTAGE (V) VB, TEMPERATURE COEFFICIENT (mV/<br>θ<br>**----- End of picture text -----**<br>


**Figure 3. Collector Saturation Region** 

**Figure 4. Base−Emitter Temperature Coefficient** 

**http://onsemi.com** 

**3** 

**BC847ATT1, BC847BTT1, BC847CTT1** 

## **BC847** 

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1.0<br>D = 0.5<br>0.2<br>0.1<br>0.1<br>0.05<br>0.02<br>0.01 0.01<br>SINGLE PULSE<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000<br>t, TIME (s)<br>Figure 5. Normalized Thermal Response<br>10 400<br>300<br>7.0 T A  = 25°C<br>200<br>5.0 C ib<br>3.0 10080 VTACE = 25 = 10 V°C<br>Cob<br>60<br>2.0<br>40<br>30<br>1.0 20<br>0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 20 40 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50<br>VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc)<br>r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE<br>C, CAPACITANCE (pF)<br>f�, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)T<br>**----- End of picture text -----**<br>


**Figure 6. Capacitances** 

**Figure 7. Current−Gain − Bandwidth Product** 

**http://onsemi.com** 

**4** 

**BC847ATT1, BC847BTT1, BC847CTT1** 

## **ORDERING INFORMATION** 

|**ORDERING INFORMATION**||||
|---|---|---|---|
|**Device**|**Marking**|**Package**|**Shipping**†|
|BC847ATT1|1E|SC−75/SOT−416|3,000 / Tape & Reel|
|BC847BTT1|1F|SC−75/SOT−416|3,000 / Tape & Reel|
|BC847BTT1G|1F|SC−75/SOT−416<br>(Pb−Free)||
|NSVBC847BTT1G*|1F|SC−75/SOT−416<br>(Pb−Free)|3,000 / Tape & Reel|
|BC847CTT1G|1G|SC−75/SOT−416<br>(Pb−Free)|3,000 / Tape & Reel|



†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

*NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. 

**http://onsemi.com** 

**5** 

**BC847ATT1, BC847BTT1, BC847CTT1** 

## **PACKAGE DIMENSIONS** 

**SC−75/SOT−416** CASE 463 ISSUE F 

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eT −E−<br>2<br>_ 3 7 e −D−<br>1<br>b 3 PL<br>0.20 (0.008) M D<br>au HE 0.20 (0.008) E<br>g op<br>C<br>A<br>Lp L A1<br>**----- End of picture text -----**<br>


NOTES: 

|**DIM**|**MILLIMETERS**<br>es|**MILLIMETERS**<br>es|**MILLIMETERS**<br>es|**INCHES**<br>e~~e~~|**INCHES**<br>e~~e~~|**INCHES**<br>e~~e~~|
|---|---|---|---|---|---|---|
||**MIN**<br>es|**NOM**<br>es|**MAX**<br>es|**MIN**|**NOM**<br>e|**MAX**<br>e~~e~~|
|**A**|0.70|0.80|0.90|0.027|0.031|0.035|
|**A1**|0.00|0.05|0.10|0.000|0.002|0.004|
|**A1**<br>**b**|0.00<br>0.15|0.05<br>0.20|0.10<br>0.30|0.000<br>0.006|0.002<br>0.008|0.004<br>0.012|
|**b**<br>**C**<br>**D**<br>—=EEEEES|0.10<br>1.55<br>0.15<br>—=EEEEES|0.15<br>1.60<br>0.20<br>—=EEEEES|0.25<br>1.65<br>0.30<br>—=EEEEES|0.004<br>0.059<br>0.006<br>—=EEEEES|0.006<br>0.063<br>0.008<br>—=EEEEES|0.010<br>0.067<br>0.012<br>—=EEEEES|
|**D**<br>**E**<br>—=EEEEES|1.55<br>0.70<br>—=EEEEES|1.60<br>0.80<br>—=EEEEES|1.65<br>0.90<br>—=EEEEES|0.059<br>0.027<br>—=EEEEES|0.063<br>0.031<br>—=EEEEES|0.067<br>0.035<br>—=EEEEES|
|**e**|1.00 BSC|||0.04 BSC|||
|**L**|0.10|0.15|0.20|0.004|0.006|0.008|
|**HE**|0.10<br>1.50|0.15<br>1.60|0.20<br>1.70|0.004<br>0.061|0.006<br>0.063|0.008<br>0.065|



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**BC847ATT1/D** 

**6**