BC847BS-7-F

Bipolar Transistor Array, Dual NPN, 45 V, 100 mA, 200 mW

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Manufacturer: DIODES INC.
Product type: Bipolar Junction Transistor Arrays - BJT
Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Power Dissipation Pd:200mW; DC Collector Current:100mA; DC Current Gain hFE:200hFE; Transistor Case Style:SOT-363; No. of Pins
MSL: -
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 6Pins
Product Range: -
Qualification: -
Transistor Mounting: Surface Mount
Transistor Polarity: Dual NPN
Power Dissipation NPN: 200mW
Power Dissipation PNP: -
Transistor Case Style: SOT-363
Transition Frequency NPN: 100MHz
Transition Frequency PNP: -
Operating Temperature Max: 150°C
DC Current Gain hFE Min NPN: 200hFE
DC Current Gain hFE Min PNP: -
Continuous Collector Current NPN: 100mA
Continuous Collector Current PNP: -
Collector Emitter Voltage Max NPN: 45V
Collector Emitter Voltage Max PNP: -

Delivery and price
Units per pack	1500
Price	0.028 €
Current stock	8660
Lead time	7 days

Datasheet

Updated at February 27, 2026