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BC847BPDXV6T1G
Bipolar Transistor Array, NPN, PNP, 45 V, 45 V, 100 mA, 100 mA, 500 mW
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- Manufacturer: ONSEMI
- Product type: Bipolar Junction Transistor Arrays - BJT
- Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:45V; Power Dissipation Pd:500mW; DC Collector Current:100mA; DC Current Gain hFE:200hFE; Transistor Case Style:SOT-563; No. o
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 6Pins
- Product Range: -
- Qualification: -
- Transistor Mounting: Surface Mount
- Transistor Polarity: NPN, PNP
- Power Dissipation NPN: 500mW
- Power Dissipation PNP: 500mW
- Transistor Case Style: SOT-563
- Transition Frequency NPN: 100MHz
- Transition Frequency PNP: 100MHz
- Operating Temperature Max: 150°C
- DC Current Gain hFE Min NPN: 200hFE
- DC Current Gain hFE Min PNP: 200hFE
- Continuous Collector Current NPN: 100mA
- Continuous Collector Current PNP: 100mA
- Collector Emitter Voltage Max NPN: 45V
- Collector Emitter Voltage Max PNP: 45V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.06 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
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Updated at April 26, 2026