BC847BPDXV6T1G

## BC847BPDXV6, SBC847BPDXV6 

## NPN/PNP Dual General Purpose Transistor 

This transistor is designed for general purpose amplifier applications. It is housed in the SOT−563 which is designed for low power surface mount applications. 

power surface mount applications. **http://onsemi.com Features** • S Prefix for Automotive and Other Applications Requiring Unique (3) (2) (1) Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable Q1 Q2 • These Devices are Pb−Free and are RoHS Compliant **MAXIMUM RATINGS − NPN** ~~ont~~ (4) (5) (6) **Rating Symbol Value Unit** Collector−Emitter Voltage VCEO 45 V **BC847BPDX6T1** Collector−Base Voltage VCBO 50 V Emitter−Base Voltage VEBO 6.0 V 6[5][4] Collector Current − IC 100 mAdc[3] Continuous 1[2] ~~Ss~~ **MAXIMUM RATINGS − PNP SOT−563 CASE 463A Rating Symbol Value Unit** Collector−Emitter Voltage VCEO −45 V **MARKING DIAGRAM** Collector−Base Voltage VCBO −50 V Emitter−Base Voltage VEBO −5.0 V 4F M Collector Current − IC −100 mAdc 1 Continuous Stresses exceeding Maximum Ratings may damage the device. Maximum 4F = Specific Device Code Ratings are stress ratings only. Functional operation above the Recommended M = Month Code ~~==~~ Operating Conditions is not implied. Extended exposure to stresses above the = Pb−Free Package Recommended Operating Conditions may affect device reliability. (Note: Microdot may be in either location) **THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Symbol Max Unit ORDERING INFORMATION** Total Device Dissipation (Note 1)TA = 25 ° C PD 357 mW **Device Package Shipping**[†] Derate above 25 ° C 2.9 mW/ ° C BC847BPDXV6T1G SOT−563 4 mm pitch Thermal Resistance − R JA ° C/W (Pb−Free) 4000/Tape & Reel Junction-to-Ambient (Note 1) 350 SBC847BPDXV6T1G SOT−563 2 mm pitch (Pb−Free) 4000/Tape & Reel **Characteristic (Both Junctions Heated) Symbol Max Unit** BC847BPDXV6T5G SOT−563 2 mm pitch ~~—~~ Total Device Dissipation (Note 1)TA = 25 ° C PD 500 mW ~~SE~~ (Pb−Free) 8000/Tape & Reel Derate above 25 ° C 4.0 mW/ ° C †For information on tape and reel specifications, including part orientation and tape sizes, please Thermal Resistance − R JA ° C/W refer to our Tape and Reel Packaging Specification Junction-to-Ambient (Note 1) 250 Brochure, BRD8011/D. Junction and Storage Temperature Range TJ, Tstg −55 to ° C +150 

1. FR−4 @ Minimum Pad 

Publication Order Number: **BC847BPDXV6T1/D** 

**1** 

© Semiconductor Components Industries, LLC, 2013 **May, 2013 − Rev. 2** 

## **BC847BPDXV6, SBC847BPDXV6** 

**ELECTRICAL CHARACTERISTICS (NPN)** (TA = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS (NPN)**(TA= 25°C unless otherwise note|d)|||||
|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**||||||
|Collector−Emitter Breakdown Voltage<br>(IC= 10 mA)|V(BR)CEO|45|−|−|V|
|Collector−Emitter Breakdown Voltage<br>(IC= 10μA, VEB= 0)|V(BR)CES|50|−|−|V|
|Collector−Base Breakdown Voltage<br>(IC= 10�A)|V(BR)CBO|50|−|−|V|
|Emitter−Base Breakdown Voltage<br>(IE= 1.0�A)|V(BR)EBO|6.0|−|−|V|
|Collector Cutoff Current (VCB= 30 V)<br>(VCB= 30 V, TA= 150°C)|ICBO|−<br>−|−<br>−|15<br>5.0|nA<br>μA|
|**ON CHARACTERISTICS**||||||
|DC Current Gain<br>(IC= 10μA, VCE= 5.0 V)<br>(IC= 2.0 mA, VCE= 5.0 V)|hFE|−<br>200|150<br>290|−<br>475|−|
|Collector−Emitter Saturation Voltage (IC= 10 mA, IB= 0.5 mA)<br>Collector−Emitter Saturation Voltage(IC= 100 mA, IB= 5.0 mA)|VCE(sat)|−<br>−|−<br>−|0.25<br>0.6|V|
|Base−Emitter Saturation Voltage (IC= 10 mA, IB= 0.5 mA)<br>Base−Emitter Saturation Voltage(IC= 100 mA, IB= 5.0 mA)|VBE(sat)|−<br>−|0.7<br>0.9|−<br>−|V|
|Base−Emitter Voltage (IC= 2.0 mA, VCE= 5.0 V)<br>Base−Emitter Voltage(IC= 10 mA, VCE= 5.0 V)|VBE(on)|580<br>−|660<br>−|700<br>770|mV|
|**SMALL−SIGNAL CHARACTERISTICS**||||||
|Current−Gain − Bandwidth Product<br>(IC= 10 mA, VCE= 5.0 Vdc, f = 100 MHz)|fT|100|−|−|MHz|
|Output Capacitance (VCB= 10 V, f = 1.0 MHz)|Cobo|−|−|4.5|pF|
|Noise Figure<br>(IC= 0.2 mA, VCE= 5.0 Vdc, RS= 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz)|NF|−|−|10|dB|



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**2** 

## **BC847BPDXV6, SBC847BPDXV6** 

## **ELECTRICAL CHARACTERISTICS (PNP)** (TA = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS (PNP)**(TA= 25°C unless otherwise n|oted)|||||
|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**||||||
|Collector−Emitter Breakdown Voltage<br>(IC= −10 mA)|V(BR)CEO|−45|−|−|V|
|Collector−Emitter Breakdown Voltage<br>(IC= −10μA, VEB= 0)|V(BR)CES|−50|−|−|V|
|Collector−Base Breakdown Voltage<br>(IC= −10�A)|V(BR)CBO|−50|−|−|V|
|Emitter−Base Breakdown Voltage<br>(IE= −1.0�A)|V(BR)EBO|−5.0|−|−|V|
|Collector Cutoff Current (VCB= −30 V)<br>Collector Cutoff Current(VCB= −30 V, TA= 150°C)|ICBO|−<br>−|−<br>−|−15<br>−4.0|nA<br>μA|
|**ON CHARACTERISTICS**||||||
|DC Current Gain<br>(IC= −10μA, VCE= −5.0 V)<br>(IC= −2.0 mA, VCE= −5.0 V)|hFE|−<br>200|150<br>290|−<br>475|−|
|Collector−Emitter Saturation Voltage<br>(IC= −10 mA, IB= −0.5 mA)<br>(IC= −100 mA, IB= −5.0 mA)|VCE(sat)|−<br>−|−<br>−|−0.3<br>−0.65|V|
|Base−Emitter Saturation Voltage<br>(IC= −10 mA, IB= −0.5 mA)<br>(IC= −100 mA, IB= −5.0 mA)|VBE(sat)|−<br>−|−0.7<br>−0.9|−<br>−|V|
|Base−Emitter On Voltage<br>(IC= −2.0 mA, VCE= −5.0 V)<br>(IC= −10 mA, VCE= −5.0 V)|VBE(on)|−0.6<br>−|−<br>−|−0.75<br>−0.82|V|
|**SMALL−SIGNAL CHARACTERISTICS**||||||
|Current−Gain − Bandwidth Product<br>(IC= −10 mA, VCE= −5.0 Vdc, f = 100 MHz)|fT|100|−|−|MHz|
|Output Capacitance<br>(VCB= −10 V, f = 1.0 MHz)|Cob|−|−|4.5|pF|
|Noise Figure<br>(IC= −0.2 mA, VCE= −5.0 Vdc, RS= 2.0 kΩ,<br>f = 1.0 kHz, BW = 200 Hz)|NF|−|−|10|dB|



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**3** 

**BC847BPDXV6, SBC847BPDXV6** 

## **TYPICAL NPN CHARACTERISTICS** 

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2.0 1.0<br>1.5 VTACE = 25 = 10 V°C 0.90.8 TA = 25°C<br>VBE(sat) @ IC/IB = 10<br>1.0 0.7<br>0.8 0.6 VBE(on) @ VCE = 10 V<br>0.5<br>0.6<br>0.4<br>0.4 0.3<br>0.3 0.2<br>0.1 VCE(sat) @ IC/IB = 10<br>0.2 0<br>0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100<br>IC, COLLECTOR CURRENT (mAdc) IC, COLLECTOR CURRENT (mAdc)<br>Figure 1. Normalized DC Current Gain Figure 2. “Saturation” and “On” Voltages<br>2.0 1.0<br>TA = 25°C -55°C to +125°C<br>1.2<br>1.6<br>IC = 200 mA 1.6<br>1.2<br>IC = IC = IC = 50 mA IC = 100 mA<br>2.0<br>10 mA 20 mA<br>0.8<br>2.4<br>0.4<br>2.8<br>0<br>0.02 0.1 1.0 10 20 0.2 1.0 10 100<br>IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Figure 3. Collector Saturation Region Figure 4. Base−Emitter Temperature Coefficient<br>10 400<br>300<br>7.0 T A  = 25°C<br>200<br>5.0 C ib<br>3.0 10080 VTACE = 25 = 10 V°C<br>Cob<br>60<br>2.0<br>40<br>30<br>1.0 20<br>0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 20 40 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50<br>VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc)<br>V, VOLTAGE (VOLTS)<br>hFE, NORMALIZED DC CURRENT GAIN<br>C)°<br>VCE, COLLECTOR-EMITTER VOLTAGE (V) VB, TEMPERATURE COEFFICIENT (mV/<br>θ<br>C, CAPACITANCE (pF)<br>f�, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)T<br>**----- End of picture text -----**<br>


**Figure 5. Capacitances** 

**Figure 6. Current−Gain − Bandwidth Product** 

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**4** 

**BC847BPDXV6, SBC847BPDXV6** 

## **TYPICAL PNP CHARACTERISTICS** 

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**----- Start of picture text -----**<br>
2.0 -1.0<br>1.5 VCE = -10 V -0.9 TA = 25°C<br>TA = 25°C -0.8 VBE(sat) @ IC/IB = 10<br>1.0 -0.7<br>-0.6 VBE(on) @ VCE = -10 V<br>0.7<br>-0.5<br>0.5 -0.4<br>-0.3<br>-0.2<br>0.3<br>-0.1 VCE(sat) @ IC/IB = 10<br>0.2 0<br>-0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100<br>IC, COLLECTOR CURRENT (mAdc) IC, COLLECTOR CURRENT (mAdc)<br>Figure 7. Normalized DC Current Gain Figure 8. “Saturation” and “On” Voltages<br>-2.0 1.0<br>TA = 25°C -55°C to +125°C<br>1.2<br>-1.6<br>1.6<br>-1.2<br>2.0<br>-0.8 IC = IC = -50 mA IC = -200 mA<br>-10 mA<br>2.4<br>IC = -100 mA<br>-0.4 IC = -20 mA<br>2.8<br>0<br>-0.02 -0.1 -1.0 -10 -20 -0.2 -1.0 -10 -100<br>IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Figure 9. Collector Saturation Region Figure 10. Base−Emitter Temperature<br>Coefficient<br>10 400<br>Cib 300<br>7.0<br>TA = 25°C 200<br>5.0<br>150 VCE = -10 V<br>TA = 25°C<br>3.0 Cob 100<br>80<br>60<br>2.0<br>40<br>30<br>1.0 20<br>-0.4 -0.6 -1.0 -2.0 -4.0 -6.0 -10 -20 -30 -40 -0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 -50<br>VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc)<br>V, VOLTAGE (VOLTS)<br>hFE, NORMALIZED DC CURRENT GAIN<br>C)°<br>VCE, COLLECTOR-EMITTER VOLTAGE (V) VB, TEMPERATURE COEFFICIENT (mV/<br>θ<br>C, CAPACITANCE (pF)<br>f�, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)T<br>**----- End of picture text -----**<br>


**Figure 11. Capacitances** 

**Figure 12. Current−Gain − Bandwidth Product** 

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**5** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

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6<br>1<br>**----- End of picture text -----**<br>


## **SOT−563, 6 LEAD** CASE 463A ISSUE H 

## DATE 26 JAN 2021 

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SCALE 4:1<br>**----- End of picture text -----**<br>


## **DOCUMENT NUMBER:** 

## **98AON11126D** 

## **DESCRIPTION: SOT−563, 6 LEAD** 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. 

**PAGE 1 OF 2** 

ON Semiconductor and          are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 

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© Semiconductor Components Industries, LLC, 2019 

## **SOT−563, 6 LEAD** CASE 463A ISSUE H 

## DATE 26 JAN 2021 

## **GENERIC MARKING DIAGRAM*** 

XX M 1 

XX = Specific Device Code M = Month Code . = Pb−Free Package 

- *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ " ”, may or may not be present. Some products may not follow the Generic Marking. 

## **DOCUMENT NUMBER:** 

**98AON11126D** 

**DESCRIPTION: SOT−563, 6 LEAD** 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. 

**PAGE 2 OF 2** 

ON Semiconductor and          are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 

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© Semiconductor Components Industries, LLC, 2019 

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