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BC847BPDW1T2G
Bipolar Transistor Array, Complementary NPN and PNP, 45 V, 45 V, 100 mA, 100 mA, 380 mW
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- Manufacturer: ONSEMI
- Product type: Bipolar Junction Transistor Arrays - BJT
- Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:45V; Power Dissipation Pd:380mW; DC Collector Current:100mA; DC Current Gain hFE:200hFE; Transistor Case Style:SO
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 6Pins
- Product Range: -
- Qualification: -
- Transistor Mounting: Surface Mount
- Transistor Polarity: Complementary NPN and PNP
- Power Dissipation NPN: 380mW
- Power Dissipation PNP: 380mW
- Transistor Case Style: SOT-363
- Transition Frequency NPN: 100MHz
- Transition Frequency PNP: 100MHz
- Operating Temperature Max: 150°C
- DC Current Gain hFE Min NPN: 200hFE
- DC Current Gain hFE Min PNP: 200hFE
- Continuous Collector Current NPN: 100mA
- Continuous Collector Current PNP: 100mA
- Collector Emitter Voltage Max NPN: 45V
- Collector Emitter Voltage Max PNP: 45V
| Delivery and price | |
|---|---|
| Units per pack | 1500 |
| Price | 0.037 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
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Updated at April 26, 2026