BC847BPDW1T2G

Bipolar Transistor Array, Complementary NPN and PNP, 45 V, 45 V, 100 mA, 100 mA, 380 mW

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Manufacturer: ONSEMI
Product type: Bipolar Junction Transistor Arrays - BJT
Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:45V; Power Dissipation Pd:380mW; DC Collector Current:100mA; DC Current Gain hFE:200hFE; Transistor Case Style:SO
MSL: MSL 1 - Unlimited
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 6Pins
Product Range: -
Qualification: -
Transistor Mounting: Surface Mount
Transistor Polarity: Complementary NPN and PNP
Power Dissipation NPN: 380mW
Power Dissipation PNP: 380mW
Transistor Case Style: SOT-363
Transition Frequency NPN: 100MHz
Transition Frequency PNP: 100MHz
Operating Temperature Max: 150°C
DC Current Gain hFE Min NPN: 200hFE
DC Current Gain hFE Min PNP: 200hFE
Continuous Collector Current NPN: 100mA
Continuous Collector Current PNP: 100mA
Collector Emitter Voltage Max NPN: 45V
Collector Emitter Voltage Max PNP: 45V

Delivery and price
Units per pack	1500
Price	0.025 €
Current stock	29530
Lead time	7 days

Datasheet

Updated at March 1, 2026