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BC847BPDW1T2G
Bipolar Transistor Array, Complementary NPN and PNP, 45 V, 45 V, 100 mA, 100 mA, 380 mW
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- Manufacturer: ONSEMI
- Product type: Bipolar Junction Transistor Arrays - BJT
- Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:45V; Power Dissipation Pd:380mW; DC Collector Current:100mA; DC Current Gain hFE:200hFE; Transistor Case Style:SO
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 6Pins
- Product Range: -
- Qualification: -
- Transistor Mounting: Surface Mount
- Transistor Polarity: Complementary NPN and PNP
- Power Dissipation NPN: 380mW
- Power Dissipation PNP: 380mW
- Transistor Case Style: SOT-363
- Transition Frequency NPN: 100MHz
- Transition Frequency PNP: 100MHz
- Operating Temperature Max: 150°C
- DC Current Gain hFE Min NPN: 200hFE
- DC Current Gain hFE Min PNP: 200hFE
- Continuous Collector Current NPN: 100mA
- Continuous Collector Current PNP: 100mA
- Collector Emitter Voltage Max NPN: 45V
- Collector Emitter Voltage Max PNP: 45V
| Delivery and price | |
|---|---|
| Units per pack | 1500 |
| Price | 0.034 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
## BC846BPDW1, BC847BPDW1, BC848CPDW1 Series ## Dual General Purpose Transistors ## **NPN/PNP Duals (Complementary)** These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications. ## **www.onsemi.com** **==> picture [44 x 26] intentionally omitted <==** **----- Start of picture text -----**<br> SOT−363<br>CASE 419B<br>STYLE 1<br>**----- End of picture text -----**<br> ## **Features** - S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable - These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ## **MAXIMUM RATINGS − NPN** |**MAXIMUM RATINGS − NPN**|||| |---|---|---|---| |**Rating**|**Symbol**|**Value**|**Unit**| |Collector-Emitter Voltage<br>BC846, SBC846<br>BC847, SBC847<br>BC848|VCEO|65<br>45<br>30|V| |Collector-Base Voltage<br>BC846, SBC846<br>BC847, SBC847<br>BC848|VCBO|80<br>50<br>30|V| |Emitter−Base Voltage|VEBO|6.0|V| |Collector Current − Continuous|IC|100|mAdc| |Collector Current − Peak|ICM|200|mAdc| ## **MAXIMUM RATINGS − PNP** |**MAXIMUM RATINGS − PNP**|||| |---|---|---|---| |**Rating**|**Symbol**|**Value**|**Unit**| |Collector-Emitter Voltage<br>BC846, SBC846<br>BC847, SBC847<br>BC848|VCEO|−65<br>−45<br>−30|V| |Collector-Base Voltage<br>BC846, SBC846<br>BC847, SBC847<br>BC848|VCBO|−80<br>−50<br>−30|V| |Emitter−Base Voltage|VEBO|−6.0|V| |Collector Current − Continuous|IC|−100|mAdc| |Collector Current − Peak|ICM|−200|mAdc| Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. **==> picture [146 x 216] intentionally omitted <==** **----- Start of picture text -----**<br> (3) (2) (1)<br>Q1 Q2<br>4<br>(4) (5) (6)<br>MARKING DIAGRAM<br>6<br>XX M<br>1<br>XX = Device Code<br>M = Date Code<br>= Pb−Free Package<br>(Note: Microdot may be in either location)<br>**----- End of picture text -----**<br> ## **ORDERING INFORMATION** |**Device**|**Mark**|**Package**<br>**Mark**|**Shipping**†| |---|---|---|---| |BC846BPDW1T1G,<br>SBC846BPDW1T1G|BB|SOT−363<br>(Pb−Free)<br>BB|3,000 /<br>Tape & Reel| |SBC846BPDW1T2G|BB|SOT−363<br>(Pb−Free)<br>BB|3,000 /<br>Tape & Reel| |BC847BPDW1T1G|BF|SOT−363<br>(Pb−Free)<br>BF|3,000 /<br>Tape & Reel| |SBC847BPDW1T1G|BF|SOT−363<br>(Pb−Free)<br>BF|3,000 /<br>Tape & Reel| |SBC847BPDW1T3G|BF|SOT−363<br>(Pb−Free)<br>BF|10,000 /<br>Tape & Reel| |BC847BPDW1T2G|BF|SOT−363<br>(Pb−Free)<br>BF|3,000 /<br>Tape & Reel| |BC848CPDW1T1G|BL|SOT−363<br>(Pb−Free)<br>BL|3,000 /<br>Tape & Reel| - †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: **BC846BPDW1T1/D** **1** © Semiconductor Components Industries, LLC, 2016 **April, 2016 − Rev. 12** **BC846BPDW1, BC847BPDW1, BC848CPDW1 Series** ## **THERMAL CHARACTERISTICS** |**THERMAL CHARACTERISTICS**|**THERMAL CHARACTERISTICS**||||||| |---|---|---|---|---|---|---|---| |**Characteristic**||**Symbol**||**Max**|||**Unit**| |Total Device Dissipation Per Device<br>FR−5 Board (Note 1)<br>TA= 25°C<br>Derate above 25°C||PD||380<br>250<br>3.0|||mW<br>mW/°C<br>mW/°C| |Thermal Resistance, Junction−to−Ambient||R�JA||328|||°C/W| |Junction and Storage Temperature||TJ, Tstg||−55 to +150|||°C| |1. FR−5 = 1.0 x 0.75 x 0.062 in.<br>**ELECTRICAL CHARACTERISTICS (NPN)**(TA= 25°C unless otherwise noted)|||||||| |**Characteristic**|**Symbol**|**Min**||**Typ**|**Max**||**Unit**| |**OFF CHARACTERISTICS**|||||||| |Collector−Emitter Breakdown Voltage<br>(IC= 10 mA)<br>BC846, SBC846 Series<br>BC847, SBC847 Series<br>BC848 Series|V(BR)CEO|65<br>45<br>30||−<br>−<br>−|−<br>−<br>−||V| |Collector−Emitter Breakdown Voltage<br>(IC= 10�A, VEB= 0)<br>BC846, SBC846 Series<br>BC847B, SBC847B Only<br>BC848 Series|V(BR)CES|80<br>50<br>30||−<br>−<br>−|−<br>−<br>−||V| |Collector−Base Breakdown Voltage<br>(IC= 10�A)<br>BC846, SBC846 Series<br>BC847, SBC847 Series<br>BC848 Series|V(BR)CBO|80<br>50<br>30||−<br>−<br>−|−<br>−<br>−||V| |Emitter−Base Breakdown Voltage<br>(IE= 1.0�A)<br>BC846, SBC846 Series<br>BC847, SBC847 Series<br>BC848 Series|V(BR)EBO|6.0<br>6.0<br>6.0||−<br>−<br>−|−<br>−<br>−||V| |Collector Cutoff Current<br>(VCB= 30 V)<br>(VCB= 30 V, TA= 150°C)|ICBO|−<br>−||−<br>−|15<br>5.0||nA<br>�A| |**ON CHARACTERISTICS**|||||||| |DC Current Gain<br>(IC= 10�A, VCE= 5.0 V)<br>BC846B, SBC846B, BC847B, SBC847B<br>BC848C<br>(IC= 2.0 mA, VCE= 5.0 V)<br>BC846B, SBC846B, BC847B, SBC84B7<br>BC848C|hFE|−<br>−<br>200<br>420||150<br>270<br>290<br>520|−<br>−<br>475<br>800||−| |Collector−Emitter Saturation Voltage<br>(IC= 10 mA, IB= 0.5 mA) All devices except SBC847BPDW1T1G<br>SBC847BPDW1T1G only<br>(IC= 100 mA, IB= 5.0 mA) All devices<br>(IC= 2 mA, IB= 0.5 mA) SBC847BPDW1T1G only|VCE(sat)|−<br>−<br>−<br>−|−<br>−<br>−<br>0.024||0.25<br>0.1<br>0.6<br>−||V| |Base−Emitter Saturation Voltage<br>(IC= 10 mA, IB= 0.5 mA)<br>(IC= 100 mA, IB= 5.0 mA)|VBE(sat)|−<br>−|0.7<br>0.9||−<br>−||V| |Base−Emitter Voltage<br>(IC= 2.0 mA, VCE= 5.0 V)<br>(IC= 10 mA, VCE= 5.0 V)|VBE(on)|580<br>−|660<br>−||700<br>770||mV| |**SMALL−SIGNAL CHARACTERISTICS**|||||||| |Current−Gain − Bandwidth Product<br>(IC= 10 mA, VCE= 5.0 Vdc, f = 100 MHz)|fT|100|−||−||MHz| |Output Capacitance (VCB= 10 V, f = 1.0 MHz)|Cobo|−|−||4.5||pF| |Noise Figure<br>(IC= 0.2 mA, VCE= 5.0 Vdc, RS= 2.0 k�, f = 1.0 kHz, BW = 200 Hz)|NF|−|−||10||dB| **www.onsemi.com** **2** ## **BC846BPDW1, BC847BPDW1, BC848CPDW1 Series** ## **ELECTRICAL CHARACTERISTICS (PNP)** (TA = 25 ° C unless otherwise noted) |**ELECTRICAL CHARACTERISTICS (PNP)**(TA= 25°C unless otherwi|se noted)||||| |---|---|---|---|---|---| |**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**| |**OFF CHARACTERISTICS**|||||| |Collector−Emitter Breakdown Voltage<br>(IC= −10 mA)<br>BC846, SBC846 Series<br>BC847, SBC847 Series<br>BC848 Series|V(BR)CEO|−65<br>−45<br>−30|−<br>−<br>−|−<br>−<br>−|V| |Collector−Emitter Breakdown Voltage<br>(IC= −10�A, VEB= 0)<br>BC846, SBC846 Series<br>BC847, SBC847 Series<br>BC848 Series|V(BR)CES|−80<br>−50<br>−30|−<br>−<br>−|−<br>−<br>−|V| |Collector−Base Breakdown Voltage<br>(IC= −10�A)<br>BC846, SBC846 Series<br>BC847, SBC847 Series<br>BC848 Series|V(BR)CBO|−80<br>−50<br>−30|−<br>−<br>−|−<br>−<br>−|V| |Emitter−Base Breakdown Voltage<br>(IE= −1.0�A)<br>BC846, SBC846 Series<br>BC847, SBC847 Series<br>BC848 Series|V(BR)EBO|−6.0<br>−6.0<br>−6.0|−<br>−<br>−|−<br>−<br>−|V| |Collector Cutoff Current<br>(VCB= −30 V)<br>(VCB= −30 V, TA= 150°C)|ICBO|−<br>−|−<br>−|−15<br>−4.0|nA<br>�A| |**ON CHARACTERISTICS**|||||| |DC Current Gain<br>(IC= −10�A, VCE= −5.0 V)<br>BC846B, SBC846B, BC847B, SBC847B<br>BC848C<br>(IC= −2.0 mA, VCE= −5.0 V)<br>BC846B, SBC846B, BC847B, SBC847B<br>BC848C|hFE|−<br>−<br>200<br>420|150<br>270<br>290<br>520|−<br>−<br>475<br>800|−| |Collector−Emitter Saturation Voltage<br>(IC= −10 mA, IB= −0.5 mA) All devices except SBC847BPDW1T1G<br>SBC847BPDW1T1G only<br>(IC= −100 mA, IB= −5.0 mA) All devices<br>(IC= −2 mA, IB= −0.5 mA) SBC847BPDW1T1G only|VCE(sat)|−<br>−<br>−<br>−|−<br>−<br>−<br>−0.024|−0.3<br>−0.1<br>−0.65<br>−|V| |Base−Emitter Saturation Voltage<br>(IC= −10 mA, IB= −0.5 mA)<br>(IC= −100 mA, IB= −5.0 mA)|VBE(sat)|−<br>−|−0.7<br>−0.9|−<br>−|V| |Base−Emitter On Voltage<br>(IC= −2.0 mA, VCE= −5.0 V)<br>(IC= −10 mA, VCE= −5.0 V)|VBE(on)|−0.6<br>−|−<br>−|−0.75<br>−0.82|V| |**SMALL−SIGNAL CHARACTERISTICS**|||||| |Current−Gain − Bandwidth Product<br>(IC= −10 mA, VCE= −5.0 Vdc, f = 100 MHz)|fT|100|−|−|MHz| |Output Capacitance<br>(VCB= −10 V, f = 1.0 MHz)|Cob|−|−|4.5|pF| |Noise Figure<br>(IC= −0.2 mA, VCE= −5.0 Vdc, RS= 2.0 k�, f = 1.0 kHz, BW = 200 Hz)|NF|−|−|10|dB| **www.onsemi.com** **3** **BC846BPDW1, BC847BPDW1, BC848CPDW1 Series** ## **TYPICAL NPN CHARACTERISTICS − BC846/SBC846** **==> picture [491 x 603] intentionally omitted <==** **----- Start of picture text -----**<br> 500 0.30<br>150 ° C VCE = 5 V IC/IB = 20<br>0.25<br>400<br>0.20<br>300 25 ° C<br>0.15<br>200 −55 ° C 150 ° C<br>0.10<br>25 ° C<br>100<br>0.05 −55 ° C<br>0 0<br>0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>Figure 1. DC Current Gain vs. Collector Figure 2. Collector Emitter Saturation Voltage<br>Current vs. Collector Current<br>1.1 1.2<br>1.0 IC/IB = 20 1.1 VCE = 5 V<br>1.0<br>0.9 −55 ° C 0.9 −55 ° C<br>0.8<br>0.8 25 ° C<br>0.7 25 ° C 0.7<br>0.6 0.6 150 ° C<br>0.5<br>0.5<br>0.4 150 ° C 0.4<br>0.3 0.3<br>0.2 0.2<br>0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>Figure 3. Base Emitter Saturation Voltage vs. Figure 4. Base Emitter Voltage vs. Collector<br>Collector Current Current<br>2.0 -1.0<br>TA = 25°C<br>1.6 -1.4<br>20 mA 50 mA 100 mA 200 mA<br>1.2 -1.8<br>�VB for VBE<br>0.8 IC = -2.2 -55°C to 125°C<br>10 mA<br>0.4 -2.6<br>0 -3.0<br>0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200<br>IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>, DC CURRENT GAIN , COLLECTOR−EMITTER<br>FE<br>h<br>SATURATION VOLTAGE (V)<br>CE(sat)<br>V<br>, BASE−EMITTER<br>BE(sat)<br>V , BASE−EMITTER VOLTAGE (V)<br>SATURATION VOLTAGE (V)<br>BE(on)<br>V<br>C)°<br>VB, TEMPERATURE COEFFICIENT (mV/<br>VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) θ<br>**----- End of picture text -----**<br> **Figure 5. Collector Saturation Region** **Figure 6. Base−Emitter Temperature Coefficient** **www.onsemi.com** **4** **BC846BPDW1, BC847BPDW1, BC848CPDW1 Series** ## **TYPICAL NPN CHARACTERISTICS − BC846/SBC846** **==> picture [239 x 172] intentionally omitted <==** **----- Start of picture text -----**<br> 40<br>TA = 25°C<br>20<br>Cib<br>10<br>6.0<br>4.0 Cob<br>2.0<br>0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100<br>VR, REVERSE VOLTAGE (VOLTS)<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br> **Figure 7. Capacitance** **==> picture [234 x 169] intentionally omitted <==** **----- Start of picture text -----**<br> VCE = 5 V<br>500 °<br>TA = 25 C<br>200<br>100<br>50<br>20<br>1.0 5.0 10 50 100<br>IC, COLLECTOR CURRENT (mA)<br>f�, CURRENT-GAIN - BANDWIDTH PRODUCTT<br>**----- End of picture text -----**<br> **Figure 8. Current−Gain − Bandwidth Product** **www.onsemi.com** **5** **BC846BPDW1, BC847BPDW1, BC848CPDW1 Series** ## **TYPICAL PNP CHARACTERISTICS — BC846/SBC846** **==> picture [491 x 603] intentionally omitted <==** **----- Start of picture text -----**<br> 500 0.30<br>150 ° C VCE = 5 V IC/IB = 20<br>0.25<br>400 150 ° C<br>25 ° C 0.20<br>300 °<br>25 C<br>0.15<br>200 −55 ° C<br>0.10<br>−55 ° C<br>100<br>0.05<br>0 0<br>0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>Figure 9. DC Current Gain vs. Collector Figure 10. Collector Emitter Saturation Voltage<br>Current vs. Collector Current<br>1.0 1.2<br>−55 ° C<br>0.9 IC/IB = 20 1.1 VCE = 5 V<br>1.0<br>0.8 25 ° C 0.9 −55 ° C<br>0.7 0.8 25 ° C<br>0.6 150 ° C 0.7<br>0.5 0.6 150 ° C<br>0.5<br>0.4<br>0.4<br>0.3<br>0.3<br>0.2 0.2<br>0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>Figure 11. Base Emitter Saturation Voltage vs. Figure 12. Base Emitter Voltage vs. Collector<br>Collector Current Current<br>-2.0 -1.0<br>-1.6 -1.4<br>IC = -20 mA -50 mA -100 mA -200 mA<br>-10 mA<br>-1.2 -1.8<br>�VB for VBE<br>-55°C to 125°C<br>-0.8 -2.2<br>-0.4 -2.6<br>TJ = 25°C<br>0 -3.0<br>-0.02 -0.05 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200<br>IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>, DC CURRENT GAIN , COLLECTOR−EMITTER<br>FE<br>h<br>SATURATION VOLTAGE (V)<br>CE(sat)<br>V<br>, BASE−EMITTER<br>BE(sat)<br>V , BASE−EMITTER VOLTAGE (V)<br>SATURATION VOLTAGE (V)<br>BE(on)<br>V<br>C)°<br>VB, TEMPERATURE COEFFICIENT (mV/<br>VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) θ<br>**----- End of picture text -----**<br> **Figure 13. Collector Saturation Region** **Figure 14. Base−Emitter Temperature Coefficient** **www.onsemi.com** **6** **BC846BPDW1, BC847BPDW1, BC848CPDW1 Series** ## **TYPICAL PNP CHARACTERISTICS — BC846/SBC846** **==> picture [484 x 172] intentionally omitted <==** **----- Start of picture text -----**<br> 40<br>VCE = -5.0 V<br>TJ = 25°C 500<br>20<br>Cib<br>200<br>10 100<br>8.0<br>6.0 50<br>Cob<br>4.0<br>20<br>2.0<br>-0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -1.0 -10 -100<br>VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)<br>C, CAPACITANCE (pF)<br>f�, CURRENT-GAIN - BANDWIDTH PRODUCTT<br>**----- End of picture text -----**<br> **Figure 15. Capacitance** **Figure 16. Current−Gain − Bandwidth Product** **www.onsemi.com** **7** **BC846BPDW1, BC847BPDW1, BC848CPDW1 Series** ## **TYPICAL NPN CHARACTERISTICS − BC847/SBC847 SERIES** **==> picture [491 x 602] intentionally omitted <==** **----- Start of picture text -----**<br> 500 0.30<br>150 ° C VCE = 5 V IC/IB = 20<br>0.25<br>400 150 ° C<br>0.20<br>300 25 ° C 25 ° C<br>0.15<br>200 −55 ° C<br>0.10<br>−55 ° C<br>100<br>0.05<br>0 0<br>0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>Figure 17. DC Current Gain vs. Collector Figure 18. Collector Emitter Saturation Voltage<br>Current vs. Collector Current<br>1.1 1.2<br>1.0 IC/IB = 20 −55 ° C 1.1 VCE = 5 V<br>0.9 25 ° C 1.0<br>−55 ° C<br>0.9<br>0.8<br>150 ° C 0.8 25 ° C<br>0.7<br>0.7<br>0.6 0.6 150 ° C<br>0.5<br>0.5<br>0.4 0.4<br>0.3 0.3<br>0.2 0.2<br>0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>Figure 19. Base Emitter Saturation Voltage vs. Figure 20. Base Emitter Voltage vs. Collector<br>Collector Current Current<br>2.0 1.0<br>TA = 25°C -55°C to +125°C<br>1.2<br>1.6<br>IC = 200 mA 1.6<br>1.2<br>IC = IC = IC = 50 mA IC = 100 mA<br>2.0<br>10 mA 20 mA<br>0.8<br>2.4<br>0.4<br>2.8<br>0<br>0.02 0.1 1.0 10 20 0.2 1.0 10 100<br>IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>, DC CURRENT GAIN , COLLECTOR−EMITTER<br>FE<br>h<br>SATURATION VOLTAGE (V)<br>CE(sat)<br>V<br>, BASE−EMITTER<br>BE(sat)<br>V , BASE−EMITTER VOLTAGE (V)<br>SATURATION VOLTAGE (V)<br>BE(on)<br>V<br>C)°<br>VCE, COLLECTOR-EMITTER VOLTAGE (V) VB, TEMPERATURE COEFFICIENT (mV/<br>θ<br>**----- End of picture text -----**<br> **Figure 21. Collector Saturation Region** **Figure 22. Base−Emitter Temperature Coefficient** **www.onsemi.com** **8** **BC846BPDW1, BC847BPDW1, BC848CPDW1 Series** ## **TYPICAL NPN CHARACTERISTICS − BC847/SBC847 SERIES** **==> picture [237 x 172] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>7.0 T A = 25°C<br>5.0 C ib<br>3.0<br>Cob<br>2.0<br>1.0<br>0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 20 40<br>VR, REVERSE VOLTAGE (VOLTS)<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br> **Figure 23. Capacitances** **==> picture [237 x 179] intentionally omitted <==** **----- Start of picture text -----**<br> 400<br>300<br>200<br>10080 VTACE = 25 = 10 V°C<br>60<br>40<br>30<br>20<br>0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50<br>IC, COLLECTOR CURRENT (mAdc)<br>f�, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)T<br>**----- End of picture text -----**<br> **Figure 24. Current−Gain − Bandwidth Product** **www.onsemi.com** **9** **BC846BPDW1, BC847BPDW1, BC848CPDW1 Series** ## **TYPICAL PNP CHARACTERISTICS − BC847/SBC847 SERIES** **==> picture [491 x 603] intentionally omitted <==** **----- Start of picture text -----**<br> 500 0.35<br>150 ° C VCE = 5 V IC/IB = 20 150 ° C<br>0.30<br>400<br>0.25<br>25 ° C<br>300<br>0.20<br>25 ° C<br>200 −55 ° C 0.15<br>0.10<br>−55 ° C<br>100<br>0.05<br>0 0<br>0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>Figure 25. DC Current Gain vs. Collector Figure 26. Collector Emitter Saturation Voltage<br>Current vs. Collector Current<br>1.0 1.2<br>0.9 IC/IB = 20 −55 ° C 1.1 VCE = 5 V<br>1.0<br>0.8 25 ° C 0.9 −55 ° C<br>0.7<br>0.8<br>0.6 150 ° C 0.7 25 ° C<br>0.5 0.6 150 ° C<br>0.5<br>0.4<br>0.4<br>0.3<br>0.3<br>0.2 0.2<br>0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>Figure 27. Base Emitter Saturation Voltage vs. Figure 28. Base Emitter Voltage vs. Collector<br>Collector Current Current<br>-2.0 1.0<br>TA = 25°C -55°C to +125°C<br>1.2<br>-1.6<br>1.6<br>-1.2<br>2.0<br>-0.8 IC = IC = -50 mA IC = -200 mA<br>-10 mA<br>2.4<br>IC = -100 mA<br>-0.4 IC = -20 mA<br>2.8<br>0<br>-0.02 -0.1 -1.0 -10 -20 -0.2 -1.0 -10 -100<br>IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>, DC CURRENT GAIN , COLLECTOR−EMITTER<br>FE<br>h<br>SATURATION VOLTAGE (V)<br>CE(sat)<br>V<br>, BASE−EMITTER<br>BE(sat)<br>V , BASE−EMITTER VOLTAGE (V)<br>SATURATION VOLTAGE (V)<br>BE(on)<br>V<br>C)°<br>VCE, COLLECTOR-EMITTER VOLTAGE (V) VB, TEMPERATURE COEFFICIENT (mV/<br>θ<br>**----- End of picture text -----**<br> **Figure 29. Collector Saturation Region** **Figure 30. Base−Emitter Temperature Coefficient** **www.onsemi.com** **10** **BC846BPDW1, BC847BPDW1, BC848CPDW1 Series** ## **TYPICAL PNP CHARACTERISTICS − BC847/SBC847 SERIES** **==> picture [242 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>Cib<br>7.0<br>TA = 25°C<br>5.0<br>3.0 Cob<br>2.0<br>1.0<br>-0.4 -0.6 -1.0 -2.0 -4.0 -6.0 -10 -20 -30 -40<br>VR, REVERSE VOLTAGE (VOLTS)<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br> **Figure 31. Capacitances** **==> picture [236 x 180] intentionally omitted <==** **----- Start of picture text -----**<br> 400<br>300<br>200<br>150 VCE = -10 V<br>TA = 25°C<br>100<br>80<br>60<br>40<br>30<br>20<br>-0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 -50<br>IC, COLLECTOR CURRENT (mAdc)<br>f�, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)T<br>**----- End of picture text -----**<br> **Figure 32. Current−Gain − Bandwidth Product** **www.onsemi.com** **11** **BC846BPDW1, BC847BPDW1, BC848CPDW1 Series** ## **TYPICAL NPN CHARACTERISTICS − BC848 SERIES** **==> picture [491 x 602] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 0.30<br>900 VCE = 5 V IC/IB = 20<br>0.25<br>800 150 ° C 150 ° C<br>700<br>0.20<br>600<br>500 25 ° C 0.15 25 ° C<br>400<br>300 −55 ° C 0.10<br>−55 ° C<br>200<br>0.05<br>100<br>0 0<br>0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>Figure 33. DC Current Gain vs. Collector Figure 34. Collector Emitter Saturation Voltage<br>Current vs. Collector Current<br>1.1 1.2<br>1.0 IC/IB = 20 −55 ° C 1.1 VCE = 5 V<br>1.0<br>0.9<br>25 ° C 0.9 −55 ° C<br>0.8<br>0.8<br>0.7 150 ° C 0.7 25 ° C<br>0.6<br>0.6<br>0.5 150 ° C<br>0.5<br>0.4 0.4<br>0.3 0.3<br>0.2 0.2<br>0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>Figure 35. Base Emitter Saturation Voltage vs. Figure 36. Base Emitter Voltage vs. Collector<br>Collector Current Current<br>2.0 1.0<br>TA = 25°C -55°C to +125°C<br>1.2<br>1.6<br>IC = 200 mA 1.6<br>1.2<br>IC = IC = IC = 50 mA IC = 100 mA<br>2.0<br>10 mA 20 mA<br>0.8<br>2.4<br>0.4<br>2.8<br>0<br>0.02 0.1 1.0 10 20 0.2 1.0 10 100<br>IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>, DC CURRENT GAIN , COLLECTOR−EMITTER<br>FE<br>h<br>SATURATION VOLTAGE (V)<br>CE(sat)<br>V<br>, BASE−EMITTER<br>BE(sat)<br>V , BASE−EMITTER VOLTAGE (V)<br>SATURATION VOLTAGE (V)<br>BE(on)<br>V<br>C)°<br>VCE, COLLECTOR-EMITTER VOLTAGE (V) VB, TEMPERATURE COEFFICIENT (mV/<br>θ<br>**----- End of picture text -----**<br> **Figure 37. Collector Saturation Region** **Figure 38. Base−Emitter Temperature Coefficient** **www.onsemi.com** **12** **BC846BPDW1, BC847BPDW1, BC848CPDW1 Series** ## **TYPICAL NPN CHARACTERISTICS − BC848 SERIES** **==> picture [237 x 172] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>7.0 T A = 25°C<br>5.0 C ib<br>3.0<br>Cob<br>2.0<br>1.0<br>0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 20 40<br>VR, REVERSE VOLTAGE (VOLTS)<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br> **Figure 39. Capacitances** **==> picture [237 x 179] intentionally omitted <==** **----- Start of picture text -----**<br> 400<br>300<br>200<br>10080 VTACE = 25 = 10 V°C<br>60<br>40<br>30<br>20<br>0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50<br>IC, COLLECTOR CURRENT (mAdc)<br>f�, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)T<br>**----- End of picture text -----**<br> **Figure 40. Current−Gain − Bandwidth Product** **www.onsemi.com** **13** **BC846BPDW1, BC847BPDW1, BC848CPDW1 Series** ## **TYPICAL PNP CHARACTERISTICS − BC848 SERIES** **==> picture [491 x 603] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 0.30<br>900 150 ° C VCE = 5 V IC/IB = 20 150 ° C<br>0.25<br>800<br>700<br>0.20<br>600 25 ° C 25 ° C<br>500 0.15<br>400 −55 ° C<br>0.10<br>300 −55 ° C<br>200<br>0.05<br>100<br>0 0<br>0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>Figure 41. DC Current Gain vs. Collector Figure 42. Collector Emitter Saturation Voltage<br>Current vs. Collector Current<br>1.0 1.2<br>0.9 IC/IB = 20 −55 ° C 1.1 VCE = 5 V<br>25 ° C 1.0<br>0.8 0.9 −55 ° C<br>0.7<br>150 ° C 0.8 25 ° C<br>0.6 0.7<br>0.5 0.6 150 ° C<br>0.5<br>0.4<br>0.4<br>0.3<br>0.3<br>0.2 0.2<br>0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>Figure 43. Base Emitter Saturation Voltage vs. Figure 44. Base Emitter Voltage vs. Collector<br>Collector Current Current<br>-2.0 1.0<br>TA = 25°C -55°C to +125°C<br>1.2<br>-1.6<br>1.6<br>-1.2<br>2.0<br>-0.8 IC = IC = -50 mA IC = -200 mA<br>-10 mA<br>2.4<br>IC = -100 mA<br>-0.4 IC = -20 mA<br>2.8<br>0<br>-0.02 -0.1 -1.0 -10 -20 -0.2 -1.0 -10 -100<br>IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>, DC CURRENT GAIN , COLLECTOR−EMITTER<br>FE<br>h<br>SATURATION VOLTAGE (V)<br>CE(sat)<br>V<br>, BASE−EMITTER<br>BE(sat)<br>V , BASE−EMITTER VOLTAGE (V)<br>SATURATION VOLTAGE (V)<br>BE(on)<br>V<br>C)°<br>VCE, COLLECTOR-EMITTER VOLTAGE (V) VB, TEMPERATURE COEFFICIENT (mV/<br>θ<br>**----- End of picture text -----**<br> **Figure 45. Collector Saturation Region** **Figure 46. Base−Emitter Temperature Coefficient** **www.onsemi.com** **14** **BC846BPDW1, BC847BPDW1, BC848CPDW1 Series** ## **TYPICAL PNP CHARACTERISTICS − BC848 SERIES** **==> picture [242 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>Cib<br>7.0<br>TA = 25°C<br>5.0<br>3.0 Cob<br>2.0<br>1.0<br>-0.4 -0.6 -1.0 -2.0 -4.0 -6.0 -10 -20 -30 -40<br>VR, REVERSE VOLTAGE (VOLTS)<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br> **Figure 47. Capacitances** **==> picture [236 x 180] intentionally omitted <==** **----- Start of picture text -----**<br> 400<br>300<br>200<br>150 VCE = -10 V<br>TA = 25°C<br>100<br>80<br>60<br>40<br>30<br>20<br>-0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 -50<br>IC, COLLECTOR CURRENT (mAdc)<br>f�, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)T<br>**----- End of picture text -----**<br> **Figure 48. Current−Gain − Bandwidth Product** **www.onsemi.com** **15** **BC846BPDW1, BC847BPDW1, BC848CPDW1 Series** **==> picture [490 x 376] intentionally omitted <==** **----- Start of picture text -----**<br> 1.0<br>D = 0.5<br>0.2<br>0.1<br>0.1<br>0.05<br>0.02 P (pk) Z R �� JAJA (t) = r(t) R = 328 ° C/W MAX � JA<br>0.01 0.01 t1 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN<br>t2 READ TIME AT t 1<br>DUTY CYCLE, D = t1/t2 TJ(pk) − TC = P(pk) R � JC(t)<br>SINGLE PULSE<br>0.001<br>0 1.0 10 100 1.0�k 10�k 100�k 1.0�M<br>t, TIME (ms)<br>Figure 49. Thermal Response<br>1000<br>The safe operating area curves indicate IC−VCE lim-<br>1 �s its of the transistor that must be observed for reliable op-<br>eration. Collector load lines for specific circuits must fall<br>100 100 10 � � ss below the limits indicated by the applicable curve.<br>1 m s The data of Figure 50 is based upon TJ(pk) = 150°C; TC<br>3 m s or TA is variable depending upon conditions. Pulse<br>10 BC846 100 10 mm ss ≤curves are valid for duty cycles to 10% provided T 150°C. TJ(pk) may be calculated from the data in FigureJ(pk)<br>1 s 49. At high case or ambient temperatures, thermal limita-<br>tions will reduce the power that can be handled to values<br>less than the limitations imposed by the secondary break-<br>1.0 down.<br>1.0 10 100<br>VCE, COLLECTOR-EMITTER VOLTAGE (V)<br>r(t), TRANSIENT THERMAL<br>RESISTANCE (NORMALIZED)<br>IC, COLLECTOR CURRENT (mA)<br>**----- End of picture text -----**<br> **Figure 50. Safe Operating Area − BC846** **==> picture [239 x 170] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>1 �s<br>10 �s<br>100 �s<br>100 1 ms<br>3 ms<br>10 ms<br>100 ms<br>BC847<br>10 1 s<br>1.0<br>1.0 10 100<br>VCE, COLLECTOR-EMITTER VOLTAGE (V)<br>IC, COLLECTOR CURRENT (mA)<br>**----- End of picture text -----**<br> **Figure 51. Safe Operating Area − BC847** **==> picture [239 x 170] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>1 �s<br>10 �s<br>100 �s<br>100 1 ms<br>3 ms<br>10 ms<br>100 ms<br>1 s<br>BC848<br>10<br>1.0<br>1.0 10 100<br>VCE, COLLECTOR-EMITTER VOLTAGE (V)<br>IC, COLLECTOR CURRENT (mA)<br>**----- End of picture text -----**<br> **Figure 52. Safe Operating Area − BC848** **www.onsemi.com** **16** **BC846BPDW1, BC847BPDW1, BC848CPDW1 Series** ## **PACKAGE DIMENSIONS** ## **SC−88/SOT−363/SC70−6** CASE 419B−02 ISSUE Y **==> picture [480 x 402] intentionally omitted <==** **----- Start of picture text -----**<br> 2X<br>aaa H D<br>7 D H NOTES:1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETERS.<br>A 3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH,<br>D GAGE PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRU-<br>PLANE SIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END.<br>4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF<br>6 5 4 THE PLASTIC BODY AND DATUM H.<br>L2 L 5. DATUMS A AND B ARE DETERMINED AT DATUM H.<br>E E1 DETAIL A 6. LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP.DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE<br>7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION.<br>1 2 3<br>ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN<br>EXCESS OF DIMENSION b AT MAXIMUM MATERIAL CONDI-<br>2X aaa C TION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER<br>bbb H D 2X 3 TIPS RADIUS OF THE FOOT.<br>e MILLIMETERS INCHES<br>DIM MIN NOM MAX MIN NOM MAX<br>B [= 6X b : A −−− −−− 1.10 −−− −−− 0.043<br>ddd M C A-B D A1 0.00 −−− 0.10 0.000 −−− 0.004<br>TOP VIEW A2 0.70 0.90 1.00 0.027 0.035 0.039<br>b 0.15 0.20 0.25 0.006 0.008 0.010<br>C 0.08 0.15 0.22 0.003 0.006 0.009<br>A2 DETAIL A D 1.80 2.00 2.20 0.070 0.078 0.086<br>A E 2.00 2.10 2.20 0.078 0.082 0.086<br>E1 1.15 1.25 1.35 0.045 0.049 0.053<br>e 0.65 BSC 0.026 BSC<br>ESSE L 0.26 0.36 0.46 0.010 0.014 0.018<br>L2 0.15 BSC 0.006 BSC<br>aaa 0.15 0.006<br>bbb 0.30 0.012<br>6X ccc C ccc 0.10 0.004<br>A1 C SEATINGPLANE Spo, c a ddd 0.10 0.004<br>SIDE VIEW END VIEW STYLE 1:<br>PIN 1. EMITTER 2<br>RECOMMENDED 2. 3. BASE 2COLLECTOR 1<br>SOLDERING FOOTPRINT* 4. EMITTER 1<br> 5. BASE 1<br>6X 6X 6. COLLECTOR 2<br>0.30 ‘to : a 0.662.50<br>0.65 goo<br>PITCH<br>DIMENSIONS: MILLIMETERS<br>**----- End of picture text -----**<br> 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. **ON Semiconductor** and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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Updated at June 10, 2026
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