BC847BM3T5G

**Preferred Device** 

## BC847BM3T5G 

## General Purpose Transistor 

## **NPN Silicon** 

These transistors are designed for general purpose amplifier applications. They are housed in the SOT−723 package which is designed for low power surface mount applications. 

## **http://onsemi.com** 

- This is a Pb−Free Device 

COLLECTOR **MAXIMUM RATINGS** (TA = 25°C) 3 **Rating Symbol Max Unit** 1 Collector−Emitter Voltage VCEO 45 V BASE Collector−Base Voltage VCBO 50 V Emitter−Base Voltage VEBO 6.0 V 2 EMITTER Collector Current − Continuous IC 100 mAdc ~~—~~ © **THERMAL CHARACTERISTICS MARKING Characteristic Symbol Max Unit DIAGRAM** 3 Total Device Dissipation, PD **SOT−723** FR−4 Board (Note 1) 260 mW **CASE 631AA** 1F M TA = 25°C 2 **STYLE 1** Derated above 25°C 2.0 mW/°C 1 ~~ee~~ Thermal Resistance, R JA 480 °C/W 1F = Device Code Junction−to−Ambient (Note 1) M = Date Code ~~ee ee~~ Total Device Dissipation, PD FR−4 Board (Note 2) 600 mW TA = 25°C **ORDERING INFORMATION** Derated above 25°C 4.8 mW/°C **Device Package Shipping**[[†]] Thermal Resistance, R JA 205 °C/W Junction−to−Ambient (Note 2) BC847BM3T5G SOT−723 8000/Tape & Reel Junction and Storage TJ, Tstg −55 to +150 °C †For information on tape and reel specifications,including part orientation and tape sizes, pleaseincluding part orientation and tape sizes, please Temperature Range Ce 

**ORDERING INFORMATION Device Package Shipping**[[†]] BC847BM3T5G SOT−723 8000/Tape & Reel †For information on tape and reel specifications,including part orientation and tape sizes, pleaseincluding part orientation and tape sizes, please Ce refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 

1. FR−4 @ Minimum Pad 

2. FR−4 @ 1.0 × 1.0 Inch Pad 

Publication Order Number: **BC847BM3/D** 

**1** 

 Semiconductor Components Industries, LLC, 2005 **March, 2005 − Rev. 0** 

## **BC847BM3T5G** 

## **ELECTRICAL CHARACTERISTICS** (TA = 25°C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise note|d)|||||
|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**||||||
|Collector−Emitter Breakdown Voltage<br>(IC= 10 mA)|V(BR)CEO|45|−|−|V|
|Collector−Emitter Breakdown Voltage<br>(IC= 10�A, VEB= 0)|V(BR)CES|50|−|−|V|
|Collector−Base Breakdown Voltage<br>(IC= 10�A)|V(BR)CBO|50|−|−|V|
|Emitter−Base Breakdown Voltage<br>(IE= 1.0�A)|V(BR)EBO|6.0|−|−|V|
|Collector Cutoff Current<br>(VCB= 30 V)<br>(VCB= 30 V, TA= 150°C)|ICBO|−<br>−|−<br>−|15<br>5.0|nA<br>�A|
|**ON CHARACTERISTICS**||||||
|DC Current Gain<br>(IC= 10�A, VCE= 5.0 V)<br>(IC= 2.0 mA, VCE= 5.0 V)|hFE|−<br>200|150<br>290|−<br>450|−|
|Collector−Emitter Saturation Voltage (IC= 10 mA, IB= 0.5 mA)<br>Collector−Emitter Saturation Voltage(IC= 100 mA, IB= 5.0 mA)|VCE(sat)|−<br>−|−<br>−|0.25<br>0.6|V|
|Base−Emitter Saturation Voltage (IC= 10 mA, IB= 0.5 mA)<br>Base−Emitter Saturation Voltage(IC= 100 mA, IB= 5.0 mA)|VBE(sat)|−<br>−|0.7<br>0.9|−<br>−|V|
|Base−Emitter Voltage (IC= 2.0 mA, VCE= 5.0 V)<br>Base−Emitter Voltage(IC= 10 mA, VCE= 5.0 V)|VBE(on)|580<br>−|660<br>−|700<br>770|mV|
|**SMALL−SIGNAL CHARACTERISTICS**||||||
|Current−Gain − Bandwidth Product<br>(IC= 10 mA, VCE= 5.0 Vdc, f = 100 MHz)|fT|100|−|−|MHz|
|Output Capacitance<br>(VCB= 10 V, f = 1.0 MHz)|Cobo|−|−|4.5|pF|
|Noise Figure<br>(IC= 0.2 mA, VCE= 5.0 Vdc, RS= 2.0 k�, f = 1.0 kHz, BW = 200 Hz)|NF|−|−|10|dB|



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**2** 

**BC847BM3T5G** 

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2.0 1.0<br>1.5 VTACE = 25 = 10 V ° C 0.90.8 TA = 25 ° C<br>VBE(sat) @ IC/IB = 10<br>1.0 0.7<br>0.8 0.6 VBE(on) @ VCE = 10 V<br>0.5<br>0.6<br>0.4<br>0.4 0.3<br>0.3 0.2<br>0.1 VCE(sat) @ IC/IB = 10<br>0.2 0<br>0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100<br>IC, COLLECTOR CURRENT (mAdc) IC, COLLECTOR CURRENT (mAdc)<br>Figure 1. Normalized DC Current Gain Figure 2. “Saturation” and “On” Voltages<br>2.0 1.0<br>TA = 25 ° C −55 ° C to +125 ° C<br>1.2<br>1.6<br>IC = 200 mA 1.6<br>1.2<br>IC = IC = IC = 50 mA IC = 100 mA<br>2.0<br>10 mA 20 mA<br>0.8<br>2.4<br>0.4<br>2.8<br>0<br>0.02 0.1 1.0 10 20 0.2 1.0 10 100<br>IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>V, VOLTAGE (VOLTS)<br>hFE, NORMALIZED DC CURRENT GAIN<br>C) °<br>VCE, COLLECTOR−EMITTER VOLTAGE (V) VB, TEMPERATURE COEFFICIENT (mV/<br>θ<br>**----- End of picture text -----**<br>


**Figure 3. Collector Saturation Region** 

**Figure 4. Base−Emitter Temperature Coefficient** 

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**3** 

**BC847BM3T5G** 

## **BC847** 

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10 400<br>300<br>7.0 TA = 25 ° C<br>200<br>5.0 Cib<br>3.0 10080 VTACE = 25 = 10 V ° C<br>Cob<br>60<br>2.0<br>40<br>30<br>1.0 20<br>0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 20 40 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50<br>VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc)<br>C, CAPACITANCE (pF)<br>f�, CURRENT−GAIN − BANDWIDTH PRODUCT (MHz)T<br>**----- End of picture text -----**<br>


**Figure 5. Capacitances** 

**Figure 6. Current−Gain − Bandwidth Product** 

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**4** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

**SOT−723** CASE 631AA−01 ISSUE D 

DATE 10 AUG 2009 

**SCALE 4:1** 

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−X− NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ASME<br>D Y14.5M, 1994.<br>b1 A 2. CONTROLLING DIMENSION: MILLIMETERS.<br>3 −Y− 3. MAXIMUM LEAD THICKNESS INCLUDES LEADFINISH. MINIMUM LEAD THICKNESS IS THE MINIMUMFINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM<br>THICKNESS OF BASE MATERIAL.<br>E H E 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD<br>FLASH, PROTRUSIONS OR GATE BURRS.<br>1 2<br>Go 2X b tf MILLIMETERS<br>C DIM MIN NOM MAX<br>2X e 0.08 X Y A 0.45 0.50 0.55<br>SIDE VIEW b 0.15 0.21 0.27<br>TOP VIEW b1 0.25 0.31 0.37<br>C 0.07 0.12 0.17<br>3X L D 1.15 1.20 1.25<br>1 E 0.75 0.80 0.85<br>e 0.40 BSC<br>H E 1.15 1.20 1.25<br>L 0.29 REF<br>L2 0.15 0.20 0.25<br>3X L2 |CU E GENERIC<br>BOTTOM VIEW MARKING DIAGRAM*<br>STYLE 1: STYLE 2: STYLE 3: STYLE 4: STYLE 5:<br>PIN 1. BASE PIN 1. ANODE PIN 1. ANODE PIN 1. CATHODE PIN 1. GATE XX M<br> 2. EMITTER  2. N/C  2. ANODE  2. CATHODE  2. SOURCE<br> 3. COLLECTOR  3. CATHODE  3. CATHODE  3. ANODE  3. DRAIN<br>=<br>1<br>XX = Specific Device Code<br>RECOMMENDED<br>M = Date Code<br>**----- End of picture text -----**<br>


1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 

3. MAXIMUM LEAD THICKNESS INCLUDES LEADFINISH. MINIMUM LEAD THICKNESS IS THE MINIMUMFINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 

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RECOMMENDED<br>SOLDERING FOOTPRINT*<br>2X<br>0.40<br>2X 0.27<br>“Ar<br>PACKAGE<br>OUTLINE<br>SAE]<br>1.50<br>3X 0.52 aoe 0.36<br>DIMENSIONS: MILLIMETERS<br>**----- End of picture text -----**<br>


*This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G”, may or not be present. 

*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98AON12989D** Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. **DESCRIPTION: SOT−723 PAGE 1 OF 1** ~~SE~~ ON Semiconductor and          are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 

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