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BC847BLT3G
Bipolar (BJT) Single Transistor, NPN, 45 V, 100 mA, 225 mW, SOT-23, Surface Mount
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- Manufacturer: ONSEMI
- Product type: Single Bipolar Junction Transistors - BJT
- Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:100MHz; Power Dissipation Pd:225mW; DC Collector Current:100mA; DC Current Gain hFE:200hFE;
- MSL: -
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: -
- Qualification: AEC-Q101
- Power Dissipation: 225mW
- Transistor Mounting: Surface Mount
- Transistor Polarity: NPN
- Transition Frequency: 100MHz
- Transistor Case Style: SOT-23
- DC Current Gain hFE Min: 200hFE
- Operating Temperature Max: 150°C
- Continuous Collector Current: 100mA
- Collector Emitter Voltage Max: 45V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.017 € |
| Current stock | 1000+ |
| Lead time | 7 days |
Datasheet
BC846ALT1G Series ## General Purpose Transistors ## **NPN Silicon** ## **Features** - Moisture Sensitivity Level: 1 **www.onsemi.com** - ESD Rating − Human Body Model: > 4000 V - ESD Rating − Machine Model: > 400 V - S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable - These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant **==> picture [80 x 61] intentionally omitted <==** **----- Start of picture text -----**<br> COLLECTOR<br>3<br>1<br>BASE<br>2<br>**----- End of picture text -----**<br> EMITTER **MAXIMUM RATINGS** **Rating Symbol Value Unit** 3 Collector-Emitter Voltage VCEO Vdc 1 BC846 65 BC847, BC850 45 2 BC848, BC849 30 **SOT−23** Collector−Base Voltage VCBO Vdc **CASE 318 STYLE 6** BC846 80 BC847, BC850 50 BC848, BC849 30 Emitter−Base Voltage VEBO Vdc BC846 6.0 BC847, BC850 6.0 XX M BC848, BC849 5.0 Collector Current − Continuous IC 100 mAdc 1 ol Stresses exceeding those listed in the Maximum Ratings table may damage the ~~Ht :~~ device. If any of these limits are exceeded, device functionality should not be XX = Device Code assumed, damage may occur and reliability may be affected. M = Date Code* **MARKING DIAGRAM** XX M 1 ol XX = Device Code M = Date Code* | = Pb−Free Package ## **THERMAL CHARACTERISTICS** (Note: Microdot may be in either location) **Characteristic Symbol Max Unit** ~~ee ee ee~~ Total Device Dissipation FR−5 Board, PD 225 mW (Note 1) TA = 25 ° C Derate above 25 ° C 1.8 mW/ ° C ~~PT~~ Thermal Resistance, R JA 556 ° C/W Junction−to−Ambient (Note 1) ~~es~~ Total Device Dissipation ~~oe~~ PD 300 mW Alumina Substrate (Note 2) TA = 25 ° C Derate above 25 ° C 2.4 mW/ ° C ~~PT~~ Thermal Resistance, R JA 417 ° C/W Junction−to−Ambient (Note 2) ~~es~~ Junction and Storage TJ ~~oe~~ , Tstg −55 to ° C Temperature Range +150 1. FR−5 = 1.0 0.75 0.062 in. 2. ~~a~~ Alumina = 0.4 0.3 0.024 in 99.5% alumina. *Date Code orientation and/or overbar may vary depending upon manufacturing location. ## **ORDERING INFORMATION** See detailed ordering and shipping information in the package dimensions section on page 12 of this data sheet. Publication Order Number: **BC846ALT1/D** **1** © Semiconductor Components Industries, LLC, 1994 **January, 2017 − Rev. 17** **BC846ALT1G Series** ## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) |**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted)|||||| |---|---|---|---|---|---| |**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**| |**OFF CHARACTERISTICS**|||||| |Collector−Emitter Breakdown Voltage<br>BC846A, B<br>(IC= 10 mA)<br>BC847A, B, C, BC850B, C<br>BC848A, B, C, BC849B, C|V(BR)CEO|65<br>45<br>30|−<br>−<br>−|−<br>−<br>−|V| |Collector−Emitter Breakdown Voltage<br>BC846A, B<br>(IC= 10�A, VEB= 0)<br>BC847A, B, C BC850B, C<br>BC848A, B, C, BC849B, C|V(BR)CES|80<br>50<br>30|−<br>−<br>−|−<br>−<br>−|V| |Collector−Base Breakdown Voltage<br>BC846A, B<br>(IC= 10�A)<br>BC847A, B, C, BC850B, C<br>BC848A, B, C, BC849B, C|V(BR)CBO|80<br>50<br>30|−<br>−<br>−|−<br>−<br>−|V| |Emitter−Base Breakdown Voltage<br>BC846A, B<br>(IE= 1.0�A)<br>BC847A, B, C, BC850B, C<br>BC848A, B, C, BC849B, C|V(BR)EBO|6.0<br>6.0<br>5.0|−<br>−<br>−|−<br>−<br>−|V| |Collector Cutoff Current (VCB= 30 V)<br>(VCB= 30 V, TA= 150°C)|ICBO|−<br>−|−<br>−|15<br>5.0|nA<br>�A| |**ON CHARACTERISTICS**|||||| |DC Current Gain<br>BC846A, BC847A, BC848A<br>(IC= 10�A, VCE= 5.0 V)<br>BC846B, BC847B, BC848B<br>BC847C, BC848C<br>(IC= 2.0 mA, VCE= 5.0 V)<br>BC846A, BC847A, BC848A<br>BC846B, BC847B, BC848B,<br>BC849B, BC850B<br>BC847C, BC848C, BC849C, BC850C|hFE|−<br>−<br>−<br>110<br>200<br>420|90<br>150<br>270<br>180<br>290<br>520|−<br>−<br>−<br>220<br>450<br>800|−| |Collector−Emitter Saturation Voltage (IC= 10 mA, IB= 0.5 mA)<br>Collector−Emitter Saturation Voltage(IC= 100 mA, IB= 5.0 mA)|VCE(sat)|−<br>−|−<br>−|0.25<br>0.6|V| |Base−Emitter Saturation Voltage (IC= 10 mA, IB= 0.5 mA)<br>Base−Emitter Saturation Voltage(IC= 100 mA, IB= 5.0 mA)|VBE(sat)|−<br>−|0.7<br>0.9|−<br>−|V| |Base−Emitter Voltage (IC= 2.0 mA, VCE= 5.0 V)<br>Base−Emitter Voltage(IC= 10 mA, VCE= 5.0 V)|VBE(on)|580<br>−|660<br>−|700<br>770|mV| |**SMALL−SIGNAL CHARACTERISTICS**|||||| |Current−Gain − Bandwidth Product<br>(IC= 10 mA, VCE= 5.0 Vdc, f = 100 MHz)|fT|100|−|−|MHz| |Output Capacitance (VCB= 10 V, f = 1.0 MHz)|Cobo|−|−|4.5|pF| |Noise Figure (IC= 0.2 mA,<br>VCE= 5.0 Vdc, RS= 2.0 k�,<br>BC846A,B, BC847A,B,C, BC848A,B,C<br>f = 1.0 kHz, BW = 200 Hz)<br>BC849B,C, BC850B,C|NF|−<br>−|−<br>−|10<br>4.0|dB| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. **www.onsemi.com** **2** **BC846ALT1G Series** ## **BC846A, BC847A, BC848A, SBC846A** **==> picture [492 x 596] intentionally omitted <==** **----- Start of picture text -----**<br> 300 300<br>150 ° C VCE = 1 V 150 ° C VCE = 5 V<br>200 200<br>25 ° C 25 ° C<br>100 −55 ° C 100 −55 ° C<br>0 0<br>0.001 0.01 0.1 1 0.001 0.01 0.1 1<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>Figure 1. DC Current Gain vs. Collector Figure 2. DC Current Gain vs. Collector<br>Current Current<br>0.18<br>0.16 IC/IB = 20 150 ° C<br>0.14<br>0.12 25 ° C<br>0.10<br>0.08<br>0.06 −55 ° C<br>0.04<br>0.02<br>0<br>0.0001 0.001 0.01 0.1<br>IC, COLLECTOR CURRENT (A)<br>Figure 3. Collector Emitter Saturation Voltage<br>vs. Collector Current<br>1.0 1.2<br>0.9 IC/IB = 20 −55 ° C 1.1 VCE = 5 V<br>1.0<br>0.8 25 ° C 0.9 −55 ° C<br>0.7 0.8 25 ° C<br>0.6 150 ° C 0.7<br>0.6<br>0.5 150 ° C<br>0.5<br>0.4<br>0.4<br>0.3 0.3<br>0.2 0.2<br>0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>, DC CURRENT GAIN , DC CURRENT GAIN<br>FE FE<br>h h<br>, COLLECTOR−EMITTER<br>SATURATION VOLTAGE (V)<br>CE(sat)<br>V<br>, BASE−EMITTER<br>BE(sat)<br>V , BASE−EMITTER VOLTAGE (V)<br>SATURATION VOLTAGE (V)<br>BE(on)<br>V<br>**----- End of picture text -----**<br> **Figure 4. Base Emitter Saturation Voltage vs. Collector Current** **Figure 5. Base Emitter Voltage vs. Collector Current** **www.onsemi.com** **3** **BC846ALT1G Series** ## **BC846A, BC847A, BC848A, SBC846A** **==> picture [487 x 384] intentionally omitted <==** **----- Start of picture text -----**<br> 2.0 1.0<br>TA = 25°C -55°C to +125°C<br>1.2<br>1.6<br>IC = 200 mA 1.6<br>1.2<br>IC = IC = IC = 50 mA IC = 100 mA<br>2.0<br>10 mA 20 mA<br>0.8<br>2.4<br>0.4<br>2.8<br>0<br>0.02 0.1 1.0 10 20 0.2 1.0 10 100<br>IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Figure 6. Collector Saturation Region Figure 7. Base−Emitter Temperature Coefficient<br>10 400<br>300<br>7.0 T A = 25°C<br>200<br>5.0 C ib<br>3.0 10080 VTACE = 25 = 10 V°C<br>Cob<br>60<br>2.0<br>40<br>30<br>1.0 20<br>0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 20 40 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50<br>VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc)<br>C)°<br>VCE, COLLECTOR-EMITTER VOLTAGE (V) VB, TEMPERATURE COEFFICIENT (mV/<br>θ<br>C, CAPACITANCE (pF)<br>f�, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)T<br>**----- End of picture text -----**<br> **Figure 8. Capacitances** **Figure 9. Current−Gain − Bandwidth Product** **www.onsemi.com** **4** **BC846ALT1G Series** ## **BC846B, SBC846B** **==> picture [492 x 595] intentionally omitted <==** **----- Start of picture text -----**<br> 600 600<br>150 ° C V CE = 1 V 150 ° C VCE = 5 V<br>500 500<br>400 400<br>25 ° C 25 ° C<br>300 300<br>200 −55 ° C 200 −55 ° C<br>100 100<br>0 0<br>0.001 0.01 0.1 1 0.001 0.01 0.1 1<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>Figure 10. DC Current Gain vs. Collector Figure 11. DC Current Gain vs. Collector<br>Current Current<br>0.30<br>IC/IB = 20 150 ° C<br>0.25<br>0.20<br>25 ° C<br>0.15<br>0.10<br>−55 ° C<br>0.05<br>0<br>0.0001 0.001 0.01 0.1<br>IC, COLLECTOR CURRENT (A)<br>Figure 12. Collector Emitter Saturation Voltage<br>vs. Collector Current<br>1.1 1.2<br>1.0 IC/IB = 20 −55 ° C 1.1 VCE = 5 V<br>1.0<br>0.9 25 ° C 0.9 −55 ° C<br>0.8<br>0.8<br>0.7 25 ° C<br>150 ° C 0.7<br>0.6<br>0.6 150 ° C<br>0.5<br>0.5<br>0.4 0.4<br>0.3 0.3<br>0.2 0.2<br>0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>, DC CURRENT GAIN , DC CURRENT GAIN<br>FE FE<br>h h<br>, COLLECTOR−EMITTER<br>SATURATION VOLTAGE (V)<br>CE(sat)<br>V<br>, BASE−EMITTER<br>BE(sat)<br>V , BASE−EMITTER VOLTAGE (V)<br>SATURATION VOLTAGE (V)<br>BE(on)<br>V<br>**----- End of picture text -----**<br> **Figure 13. Base Emitter Saturation Voltage vs. Collector Current** **Figure 14. Base Emitter Voltage vs. Collector Current** **www.onsemi.com** **5** **BC846ALT1G Series** ## **BC846B, SBC846B** **==> picture [484 x 390] intentionally omitted <==** **----- Start of picture text -----**<br> 2.0 1.0<br>TA = 25°C<br>1.6 1.4<br>20 mA 50 mA 100 mA 200 mA<br>1.2 1.8<br>�VB for VBE<br>0.8 IC = 2.2 -55°C to 125°C<br>10 mA<br>0.4 2.6<br>0 3.0<br>0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200<br>IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Figure 15. Collector Saturation Region Figure 16. Base−Emitter Temperature Coefficient<br>40<br>TA = 25°C VCE = 5 V<br>500 °<br>TA = 25 C<br>20<br>Cib<br>200<br>10<br>100<br>6.0<br>50<br>4.0 Cob<br>20<br>2.0<br>0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 1.0 5.0 10 50 100<br>VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)<br>C)°<br>VB, TEMPERATURE COEFFICIENT (mV/<br>VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) θ<br>C, CAPACITANCE (pF)<br>f�, CURRENT-GAIN - BANDWIDTH PRODUCTT<br>**----- End of picture text -----**<br> **Figure 17. Capacitance** **Figure 18. Current−Gain − Bandwidth Product** **www.onsemi.com** **6** **BC846ALT1G Series** ## **BC847B, BC848B, BC849B, BC850B, SBC847B, SBC848B** **==> picture [489 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> 600 600<br>150 ° C V CE = 1 V 150 ° C VCE = 5 V<br>500 500<br>400 400<br>25 ° C 25 ° C<br>300 300<br>200 −55 ° C 200 −55 ° C<br>100 100<br>0 0<br>0.001 0.01 0.1 1 0.001 0.01 0.1 1<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>, DC CURRENT GAIN , DC CURRENT GAIN<br>FE FE<br>h h<br>**----- End of picture text -----**<br> **Figure 19. DC Current Gain vs. Collector Current** **Figure 20. DC Current Gain vs. Collector Current** **==> picture [492 x 382] intentionally omitted <==** **----- Start of picture text -----**<br> 0.30<br>IC/IB = 20<br>0.25<br>150 ° C<br>0.20<br>25 ° C<br>0.15<br>0.10<br>−55 ° C<br>0.05<br>0<br>0.0001 0.001 0.01 0.1<br>IC, COLLECTOR CURRENT (A)<br>Figure 21. Collector Emitter Saturation Voltage<br>vs. Collector Current<br>1.1 1.2<br>1.0 IC/IB = 20 −55 ° C 1.1 VCE = 5 V<br>1.0<br>0.9<br>25 ° C 0.9 −55 ° C<br>0.8<br>0.8 25 ° C<br>0.7<br>150 ° C 0.7<br>0.6<br>0.6 150 ° C<br>0.5<br>0.5<br>0.4<br>0.4<br>0.3 0.3<br>0.2 0.2<br>0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>, COLLECTOR−EMITTER<br>SATURATION VOLTAGE (V)<br>CE(sat)<br>V<br>, BASE−EMITTER<br>BE(sat)<br>V , BASE−EMITTER VOLTAGE (V)<br>SATURATION VOLTAGE (V)<br>BE(on)<br>V<br>**----- End of picture text -----**<br> **Figure 22. Base Emitter Saturation Voltage vs. Collector Current** **Figure 23. Base Emitter Voltage vs. Collector Current** **www.onsemi.com** **7** **BC846ALT1G Series** ## **BC847B, BC848B, BC849B, BC850B, SBC846B, SBC847B, SBC848B** **==> picture [487 x 394] intentionally omitted <==** **----- Start of picture text -----**<br> 2.0 1.0<br>TA = 25°C -55°C to +125°C<br>1.2<br>1.6<br>IC = 200 mA 1.6<br>1.2<br>IC = IC = IC = 50 mA IC = 100 mA<br>2.0<br>10 mA 20 mA<br>0.8<br>2.4<br>0.4<br>2.8<br>0<br>0.02 0.1 1.0 10 20 0.2 1.0 10 100<br>IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Figure 24. Collector Saturation Region Figure 25. Base−Emitter Temperature<br>Coefficient<br>10 400<br>300<br>7.0 T A = 25°C<br>200<br>5.0 C ib<br>3.0 10080 VTACE = 25 = 10 V°C<br>Cob<br>60<br>2.0<br>40<br>30<br>1.0 20<br>0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 20 40 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50<br>VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc)<br>C)°<br>VCE, COLLECTOR-EMITTER VOLTAGE (V) VB, TEMPERATURE COEFFICIENT (mV/<br>θ<br>C, CAPACITANCE (pF)<br>f�, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)T<br>**----- End of picture text -----**<br> **Figure 26. Capacitances** **Figure 27. Current−Gain − Bandwidth Product** **www.onsemi.com** **8** **BC846ALT1G Series** ## **BC847C, BC848C, BC849C, BC850C, SBC847C** **==> picture [492 x 595] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 1000<br>900 150 ° C V CE = 1 V 900 150 ° C V CE = 5 V<br>800 800<br>700 700<br>600 25 ° C 600 25 ° C<br>500 500<br>400 400<br>−55 ° C −55 ° C<br>300 300<br>200 200<br>100 100<br>0 0<br>0.001 0.01 0.1 1 0.001 0.01 0.1 1<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>Figure 28. DC Current Gain vs. Collector Figure 29. DC Current Gain vs. Collector<br>Current Current<br>0.30<br>IC/IB = 20<br>0.25<br>150 ° C<br>0.20<br>25 ° C<br>0.15<br>0.10<br>−55 ° C<br>0.05<br>0<br>0.0001 0.001 0.01 0.1<br>IC, COLLECTOR CURRENT (A)<br>Figure 30. Collector Emitter Saturation Voltage<br>vs. Collector Current<br>1.1 1.2<br>1.0 IC/IB = 20 −55 ° C 1.1 VCE = 5 V<br>1.0<br>0.9<br>25 ° C 0.9 −55 ° C<br>0.8<br>0.7 0.8 25 ° C<br>150 ° C 0.7<br>0.6<br>0.6 150 ° C<br>0.5<br>0.5<br>0.4<br>0.4<br>0.3 0.3<br>0.2 0.2<br>0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>, DC CURRENT GAIN , DC CURRENT GAIN<br>FE FE<br>h h<br>, COLLECTOR−EMITTER<br>SATURATION VOLTAGE (V)<br>CE(sat)<br>V<br>, BASE−EMITTER<br>BE(sat)<br>V , BASE−EMITTER VOLTAGE (V)<br>SATURATION VOLTAGE (V)<br>BE(on)<br>V<br>**----- End of picture text -----**<br> **Figure 31. Base Emitter Saturation Voltage vs. Collector Current** **Figure 32. Base Emitter Voltage vs. Collector Current** **www.onsemi.com** **9** **BC846ALT1G Series** ## **BC847C, BC848C, BC849C, BC850C, SBC847C** **==> picture [487 x 394] intentionally omitted <==** **----- Start of picture text -----**<br> 2.0 1.0<br>TA = 25°C -55°C to +125°C<br>1.2<br>1.6<br>IC = 200 mA 1.6<br>1.2<br>IC = IC = IC = 50 mA IC = 100 mA<br>2.0<br>10 mA 20 mA<br>0.8<br>2.4<br>0.4<br>2.8<br>0<br>0.02 0.1 1.0 10 20 0.2 1.0 10 100<br>IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Figure 33. Collector Saturation Region Figure 34. Base−Emitter Temperature<br>Coefficient<br>10 400<br>300<br>7.0 T A = 25°C<br>200<br>5.0 C ib<br>3.0 10080 VTACE = 25 = 10 V°C<br>Cob<br>60<br>2.0<br>40<br>30<br>1.0 20<br>0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 20 40 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50<br>VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc)<br>C)°<br>VCE, COLLECTOR-EMITTER VOLTAGE (V) VB, TEMPERATURE COEFFICIENT (mV/<br>θ<br>C, CAPACITANCE (pF)<br>f�, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)T<br>**----- End of picture text -----**<br> **Figure 35. Capacitances** **Figure 36. Current−Gain − Bandwidth Product** **www.onsemi.com** **10** **BC846ALT1G Series** **==> picture [491 x 382] intentionally omitted <==** **----- Start of picture text -----**<br> 1 1<br>100 mS 10 mS 100 mS 10 mS<br>1 mS 1 mS<br>0.1 1 S 0.1 1 S<br>Thermal Limit Thermal Limit<br>0.01 0.01<br>0.001 0.001<br>1 10 100 0.1 1 10 100<br>VCE, COLLECTOR EMITTER VOLTAGE (V) VCE, COLLECTOR EMITTER VOLTAGE (V)<br>Figure 37. Safe Operating Area for Figure 38. Safe Operating Area for<br>BC846A, BC846B BC847A, BC847B, BC847C, BC850B, BC850C<br>1<br>100 mS 10 mS<br>1 mS<br>0.1 1 S<br>Thermal Limit<br>0.01<br>0.001<br>0.1 1 10 100<br>VCE, COLLECTOR EMITTER VOLTAGE (V)<br>, COLLECTOR CURRENT (A) , COLLECTOR CURRENT (A)<br>IC IC<br>, COLLECTOR CURRENT (A)<br>IC<br>**----- End of picture text -----**<br> **Figure 39. Safe Operating Area for BC848A, BC848B, BC848C, BC849B, BC849C** **www.onsemi.com** **11** **BC846ALT1G Series** ## **ORDERING INFORMATION** |**ORDERING INFORMATION**|||| |---|---|---|---| |**Device**|**Marking**|**Package**|**Shipping**†| |BC846ALT1G|1A|SOT−23<br>(Pb−Free)|3,000 / Tape & Reel| |SBC846ALT1G*|||| |BC846ALT3G|||10,000 / Tape & Reel| |BC846BLT1G|1B||3,000 / Tape & Reel| |SBC846BLT1G*|||| |BC846BLT3G|||10,000 / Tape & Reel| |SBC846BLT3G*|||| |BC847ALT1G|1E||3,000 / Tape & Reel| |BC847ALT3G|||10,000 / Tape & Reel| |BC847BLT1G|1F||3,000 / Tape & Reel| |SBC847BLT1G*|||| |BC847BLT3G|||10,000 / Tape & Reel| |NSVBC847BLT3G*|||| |BC847CLT1G|1G||3,000 / Tape & Reel| |SBC847CLT1G*|||| |BC847CLT3G|||10,000 / Tape & Reel| |BC848ALT1G|1J||3,000 / Tape & Reel| |BC848BLT1G|1K||3,000 / Tape & Reel| |SBC848BLT1G*|||| |BC848BLT3G|||10,000 / Tape & Reel| |BC848CLT1G|1L||3,000 / Tape & Reel| |NSVBC848CLT1G*|||| |BC848CLT3G|||10,000 / Tape & Reel| |BC849BLT1G|2B||3,000 / Tape & Reel| |NSVBC849BLT1G*|||| |BC849BLT3G|||10,000 / Tape & Reel| |BC849CLT1G|2C||3,000 / Tape & Reel| |BC849CLT3G|||10,000 / Tape & Reel| |BC850BLT1G|2F||3,000 / Tape & Reel| |NSVBC850BLT1G*|||| |BC850CLT1G|2G||| |NSVBC850CLT1G*|||| †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. **www.onsemi.com** **12** **BC846ALT1G Series** ## **PACKAGE DIMENSIONS** **SOT−23 (TO−236)** CASE 318−08 ISSUE AR **==> picture [463 x 328] intentionally omitted <==** **----- Start of picture text -----**<br> D NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETERS.<br>3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.<br>0.25 MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF<br>3 THE BASE MATERIAL.<br>o E eat [|] HE T = 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,PROTRUSIONS, OR GATE BURRS.<br>1 2<br>MILLIMETERS INCHES<br>DIM MIN NOM MAX MIN NOM MAX<br>L A 0.89 1.00 1.11 0.035 0.039 0.044<br>3X b L1 A1b 0.010.37 0.060.44 0.100.50 0.0000.015 0.0020.017 0.0040.020<br>e VIEW C c 0.08 0.14 0.20 0.003 0.006 0.008<br>TOP VIEW D 2.80 2.90 3.04 0.110 0.114 0.120<br>E 1.20 1.30 1.40 0.047 0.051 0.055<br>e 1.78 1.90 2.04 0.070 0.075 0.080<br>L 0.30 0.43 0.55 0.012 0.017 0.022<br>A L1 0.35 0.54 0.69 0.014 0.021 0.027<br>H E 2.10 2.40 2.64 0.083 0.094 0.104<br>T 0 ° −−− 10 ° 0 ° −−− 10 °<br>a A1 SIDE VIEW SEE VIEW C c STYLE 6:<br>END VIEW PIN 1. BASE<br>2. EMITTER<br>3. COLLECTOR<br>RECOMMENDED<br>SOLDERING FOOTPRINT*<br>3X<br>2.90 r o 0.90<br>LO \ ct<br>3X 0.80 | LL 0.95<br>PITCH<br>DIMENSIONS: MILLIMETERS<br>**----- End of picture text -----**<br> *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **PUBLICATION ORDERING INFORMATION** **LITERATURE FULFILLMENT** : **N. American Technical Support** : 800−282−9855 Toll Free **ON Semiconductor Website** : **www.onsemi.com** Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA **Europe, Middle East and Africa Technical Support: Order Literature** : http://www.onsemi.com/orderlit **Phone** : 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 **Fax** : 303−675−2176 or 800−344−3867 Toll Free USA/Canada **Japan Customer Focus Center** For additional information, please contact your local **Email** : orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative ## **LITERATURE FULFILLMENT** : ◊ **www.onsemi.com** **BC846ALT1/D** **13**
Updated at March 24, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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