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BC847BDW1T3G

Bipolar Transistor Array, Dual NPN, 45 V, 100 mA, 380 mW, 200 hFE, SOT-363

  • Manufacturer: ONSEMI
  • Product type: Bipolar Junction Transistor Arrays - BJT
  • Product variants: No other variants available. No other names.
  • Power Dissipation NPN: 380mW
  • Transition Frequency NPN: 100MHz
  • DC Current Gain hFE Min NPN: 200hFE
  • Continuous Collector Current NPN: 100mA
  • Collector Emitter Voltage Max NPN: 45V
Delivery and price
Units per pack 500
Price 0.036 €
Current stock N/A
Lead time 30 days
PDF File icon Datasheet