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BC847BDW1T1G
Bipolar Transistor Array, General Purpose, Dual NPN, 45 V, 100 mA, 380 mW
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- Manufacturer: ONSEMI
- Product type: Bipolar Junction Transistor Arrays - BJT
- Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Power Dissipation Pd:380mW; DC Collector Current:100mA; DC Current Gain hFE:450hFE; Transistor Case Style:SOT-363; No. of
- MSL: -
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 6Pins
- Product Range: BCxxx Series
- Qualification: -
- Transistor Mounting: Surface Mount
- Transistor Polarity: Dual NPN
- Power Dissipation NPN: 380mW
- Power Dissipation PNP: -
- Transistor Case Style: SOT-363
- Transition Frequency NPN: 100MHz
- Transition Frequency PNP: -
- Operating Temperature Max: 150°C
- DC Current Gain hFE Min NPN: 450hFE
- DC Current Gain hFE Min PNP: -
- Continuous Collector Current NPN: 100mA
- Continuous Collector Current PNP: -
- Collector Emitter Voltage Max NPN: 45V
- Collector Emitter Voltage Max PNP: -
| Delivery and price | |
|---|---|
| Units per pack | 1500 |
| Price | 0.041 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
## BC846BDW1, BC847BDW1, BC848CDW1
## Dual General Purpose Transistors **NPN Duals**
## **www.onsemi.com**
These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications.
## **Features**
- S and NSV Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
**SOT−363/SC−88 CASE 419B STYLE 1**
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS (3) (2) (1) Compliant* Q1 Q2 **MAXIMUM RATINGS Rating Symbol BC846 BC847 BC848 Unit** Collector−Emitter Voltage VCEO 65 45 30 V (4) (5) (6) Collector−Base Voltage VCBO 80 50 30 V **MARKING DIAGRAM** Emitter−Base Voltage VEBO 6.0 6.0 5.0 V Collector Current − IC 100 100 100 mAdc 6 Continuous ~~=a mtd~~ 1x M Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1
## **THERMAL CHARACTERISTICS**
|**THERMAL CHARACTERISTICS**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Max**|**Unit**|
|Total Device Dissipation<br>Per Device<br>FR−5 Board (Note 1)<br>TA= 25°C<br>Derate Above 25°C|PD|380<br>250<br>3.0|mW<br>mW<br>mW/°C|
|Thermal Resistance,<br>Junction to Ambient|R JA|328|°C/W|
|Junction and Storage Temperature<br>Range|TJ, Tstg|−55 to +150|°C|
- 1x = Specific Device Code
- x = B, F, G, L
- M = Date Code
- = Pb−Free Package
- (Note: Microdot may be in either location)
## **ORDERING INFORMATION**
See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet.
1. FR−5 = 1.0 x 0.75 x 0.062 in
- *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
Publication Order Number: **BC846BDW1T1/D**
**1**
© Semiconductor Components Industries, LLC, 2015 **August, 2016 − Rev. 11**
## **BC846BDW1, BC847BDW1, BC848CDW1**
## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted)
|**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise n|oted)|||||
|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**||||||
|Collector−Emitter Breakdown Voltage<br>(IC= 10 mA)<br>BC846<br>BC847<br>BC848|V(BR)CEO|65<br>45<br>30|−<br>−<br>−|−<br>−<br>−|V|
|Collector−Emitter Breakdown Voltage<br>(IC= 10�A, VEB= 0)<br>BC846<br>BC847<br>BC848|V(BR)CES|80<br>50<br>30|−<br>−<br>−|−<br>−<br>−|V|
|Collector−Base Breakdown Voltage<br>(IC= 10�A)<br>BC846<br>BC847<br>BC848|V(BR)CBO|80<br>50<br>30|−<br>−<br>−|−<br>−<br>−|V|
|Emitter−Base Breakdown Voltage<br>(IE= 1.0�A)<br>BC846<br>BC847<br>BC848|V(BR)EBO|6.0<br>6.0<br>5.0|−<br>−<br>−|−<br>−<br>−|V|
|Collector Cutoff Current<br>(VCB= 30 V)<br>(VCB= 30 V, TA= 150°C)|ICBO|−<br>−|−<br>−|15<br>5.0|nA<br>�A|
|**ON CHARACTERISTICS**||||||
|DC Current Gain<br>(IC= 10�A, VCE= 5.0 V)<br>BC846B, BC847B<br>BC847C, BC848C<br>(IC= 2.0 mA, VCE= 5.0 V)<br>BC846B, BC847B<br>BC847C, BC848C|hFE|−<br>−<br>200<br>420|150<br>270<br>290<br>520|−<br>−<br>450<br>800|−|
|Collector−Emitter Saturation Voltage<br>(IC= 10 mA, IB= 0.5 mA)<br>(IC= 100 mA, IB= 5.0 mA)|VCE(sat)|−<br>−|−<br>−|0.25<br>0.6|V|
|Base−Emitter Saturation Voltage<br>(IC= 10 mA, IB= 0.5 mA)<br>(IC= 100 mA, IB= 5.0 mA)|VBE(sat)|−<br>−|0.7<br>0.9|−<br>−|V|
|Base−Emitter Voltage<br>(IC= 2.0 mA, VCE= 5.0 V)<br>(IC= 10 mA, VCE= 5.0 V)|VBE(on)|580<br>−|660<br>−|700<br>770|mV|
|**SMALL−SIGNAL CHARACTERISTICS**||||||
|Current−Gain − Bandwidth Product<br>(IC= 10 mA, VCE= 5.0 Vdc, f = 100 MHz)|fT|100|−|−|MHz|
|Output Capacitance<br>(VCB= 10 V, f = 1.0 MHz)|Cobo|−|−|4.5|pF|
|Noise Figure<br>(IC= 0.2 mA, VCE= 5.0 Vdc, RS= 2.0 k�,f = 1.0 kHz, BW = 200 Hz)|NF|−|−|10|dB|
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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**2**
**BC846BDW1, BC847BDW1, BC848CDW1**
## **TYPICAL CHARACTERISTICS − BC846BDW1**
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**----- Start of picture text -----**<br>
600 600<br>VCE = 5 V VCE = 10 V<br>500 500<br>150 ° C 150 ° C<br>400 400<br>300 25 ° C 300 25 ° C<br>200 −55 ° C 200 −55 ° C<br>100 100<br>0 0<br>0.001 0.01 0.1 1 0.001 0.01 0.1 1<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>Figure 1. DC Current Gain at VCE = 5 V Figure 2. DC Current Gain at VCE = 10 V<br>0.25 0.3<br>IC/IB = 10<br>IC/IB = 20<br>0.25<br>0.20<br>0.2<br>0.15<br>0.15<br>150 ° C<br>0.10 25 ° C 0.1 25 ° C 150 ° C<br>0.05 −55 ° C 0.05 −55 ° C<br>0.00 0<br>0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>Figure 3. VCE(sat) at IC/IB = 10 Figure 4. VCE(sat) at IC/IB = 20<br>1.10 1.10<br>IC/IB = 10 IC/IB = 20<br>1.00 1.00<br>0.90 −55 ° C 0.90<br>−55 ° C<br>0.80 25 ° C 0.80<br>0.70 0.70 25 ° C<br>0.60 150 ° C 0.60<br>0.50 0.50<br>150 ° C<br>0.40 0.40<br>0.30 0.30<br>0.20 0.20<br>0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>, DC CURRENT GAIN , DC CURRENT GAIN<br>FE FE<br>h h<br>, COLL−EMITT SATURATION VOLTAGE (V) , COLL−EMITT SATURATION VOLTAGE (V)<br>CE(sat) CE(sat)<br>V V<br>, BASE−EMITT SATURATION VOLTAGE (V) , BASE−EMITT SATURATION VOLTAGE (V)<br>BE(sat) BE(sat)<br>V V<br>**----- End of picture text -----**<br>
**Figure 5. VBE(sat) at IC/IB = 10**
**Figure 6. VBE(sat) at IC/IB = 20**
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**3**
**BC846BDW1, BC847BDW1, BC848CDW1**
## **TYPICAL CHARACTERISTICS − BC846BDW1**
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1.20 1000<br>1.10 VCE = 5 V VTCEA = 25 = 10 V ° C<br>1.00<br>0.90 −55 ° C<br>0.80<br>25 ° C<br>0.70 100<br>0.60<br>0.50 150 ° C<br>0.40<br>0.30<br>0.20 10<br>0.0001 0.001 0.01 0.1 0.1 1 10 100<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (mA)<br>Figure 7. VBE(on) at VCE = 5 V Figure 8. Current − Gain − Bandwidth Product<br>10 TA = 25 ° C 2 TA = 25 ° C<br>1.6<br>Cib 10 mAIC = 20 mAIC = 50 mAIC = 100 mA IC =<br>1.2<br>Cob 0.8<br>0.4<br>1 0<br>0.1 1 10 100 0.01 0.1 1 10 100<br>VR, REVERSE VOLTAGE (V) IB, BASE CURRENT (mA)<br>Figure 9. Capacitances Figure 10. Collector Saturation Region<br>−0.2 VCE = 5 V<br>−0.6<br>−1<br>−1.4<br>−1.8 � VB, for VBE<br>−55 ° C to 150 ° C<br>−2.2<br>−2.6<br>−3<br>0.1 1 10 100<br>IB, BASE CURRENT (mA)<br>(V)<br>PRODUCT<br>, BASE−EMITTER VOLTAGE<br>BE(on) , CURRENT−GAIN − BANDWIDTH<br>V fT<br>AGE (V)<br>C, CAPACITANCE (pF)<br>, COLLECTOR−EMITTER VOLT-<br>CE<br>V<br>C)<br>°<br>(mV/<br>, TEMPERATURE COEFFICIENT<br>VB<br>�<br>**----- End of picture text -----**<br>
**Figure 11. Base−Emitter Temperature Coefficient**
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**4**
**BC846BDW1, BC847BDW1, BC848CDW1**
## **TYPICAL CHARACTERISTICS − BC847BDW1**
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600 600<br>VCE = 5 V VCE = 10 V<br>150 ° C 150 ° C<br>500 500<br>400 400<br>25 ° C 25 ° C<br>300 300<br>200 −55 ° C 200 −55 ° C<br>100 100<br>0 0<br>0.0001 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>Figure 12. DC Current Gain at VCE = 5 V Figure 13. DC Current Gain at VCE = 10 V<br>0.25 0.30<br>IC/IB = 10 IC/IB = 20<br>0.25<br>0.20<br>0.20<br>0.15<br>0.15<br>0.10 25 ° C 150 ° C 0.10 25 ° C 150 ° C<br>0.05<br>−55 ° C 0.05 −55 ° C<br>0.00 0.00<br>0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>Figure 14. VCE at IC/IB = 10 Figure 15. VCE at IC/IB = 20<br>1.20 1.20<br>IC/IB = 10 IC/IB = 20<br>1.00 1.00<br>−55 ° C −55 ° C<br>0.80 0.80<br>25 ° C 25 ° C<br>0.60 0.60<br>0.40 150 ° C 0.40 150 ° C<br>0.20 0.20<br>0.00 0.00<br>0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>Figure 16. VBE(sat) at IC/IB = 10 Figure 17. VBE(sat) at IC/IB = 20<br>, DC CURRENT GAIN , DC CURRENT GAIN<br>FE FE<br>h h<br>, COLL−EMITT SATURATION VOLTAGE (V) , COLL−EMITT SATURATION VOLTAGE (V)<br>CE(sat) CE(sat)<br>V V<br>, BASE−EMITT SATURATION VOLTAGE (V) , BASE−EMITT SATURATION VOLTAGE (V)<br>BE(sat) BE(sat)<br>V V<br>**----- End of picture text -----**<br>
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**5**
**BC846BDW1, BC847BDW1, BC848CDW1**
## **TYPICAL CHARACTERISTICS − BC847BDW1**
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**----- Start of picture text -----**<br>
1.20 1000<br>VCE = 5 V VCE = 10 V<br>1.10 TA = 25 ° C<br>1.00<br>0.90<br>−55 ° C<br>0.80<br>0.70 25 ° C 100<br>0.60<br>0.50<br>150 ° C<br>0.40<br>0.30<br>0.20 10<br>0.0001 0.001 0.01 0.1 0.1 1 10 100<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (mA)<br>Figure 18. VBE(on) at VCE = 5 V Figure 19. Current − Gain − Bandwidth<br>Product<br>10 2<br>TA = 25 ° C TA = 25 ° C<br>Cib 1.6 I C = IC =<br>10 mA IC = I C = 100 mA<br>1.2 20 mA 50 mA<br>Cob 0.8<br>0.4<br>1 0<br>0.1 1 10 100 0.01 0.1 1 10 100<br>VR, REVERSE VOLTAGE (V) IB, BASE CURRENT (mA)<br>Figure 20. Capacitances Figure 21. Collector Saturation Region<br>−0.2 VCE = 5 V<br>−0.6<br>−1<br>−1.4 � VB, for VBE<br>−55 ° C to 150 ° C<br>−1.8<br>−2.2<br>−2.6<br>−3<br>0.1 1 10 100<br>IB, BASE CURRENT (mA)<br>(V)<br>PRODUCT<br>, BASE−EMITTER VOLTAGEVBE(on) , CURRENT−GAIN − BANDWIDTHfT<br>AGE (V)<br>C, CAPACITANCE (pF)<br>, COLLECTOR−EMITTER VOLT-<br>CE<br>V<br>C)<br>°<br>(mV/<br>, TEMPERATURE COEFFICIENT<br>VB<br>�<br>**----- End of picture text -----**<br>
**Figure 22. Base−Emitter Temperature Coefficient**
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**6**
**BC846BDW1, BC847BDW1, BC848CDW1**
## **TYPICAL CHARACTERISTICS − BC848CDW1**
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**----- Start of picture text -----**<br>
1000<br>900 150 ° C VCE = 5 V<br>800<br>700<br>600 25 ° C<br>500<br>400<br>−55 ° C<br>300<br>200<br>100<br>0<br>0.0001 0.001 0.01 0.1 1<br>IC, COLLECTOR CURRENT (A)<br>, DC CURRENT GAIN<br>FE<br>h<br>**----- End of picture text -----**<br>
**Figure 23. DC Current Gain at VCE = 5 V**
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**----- Start of picture text -----**<br>
1000<br>150 ° C VCE = 10 V<br>900<br>800<br>700<br>600 25 ° C<br>500<br>400 −55 ° C<br>300<br>200<br>100<br>0<br>0.0001 0.001 0.01 0.1 1<br>IC, COLLECTOR CURRENT (A)<br>, DC CURRENT GAIN<br>FE<br>h<br>**----- End of picture text -----**<br>
**Figure 24. DC Current Gain at VCE = 10 V**
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**----- Start of picture text -----**<br>
0.20 0.30<br>IC/IB = 10 IC/IB = 20<br>0.18<br>0.25<br>0.16<br>0.14<br>0.20<br>0.12<br>0.10 150 ° C 0.15<br>0.08 25 ° C 0.10 25 ° C 150 ° C<br>0.06<br>0.04 −55 ° C<br>0.05 −55 ° C<br>0.02<br>0.00 0.00<br>0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>Figure 25. VCE at IC/IB = 10 Figure 26. VCE at IC/IB = 20<br>1.1 1.2<br>IC/IB = 10 IC/IB = 20<br>1.0<br>1.0<br>0.9<br>−55 ° C −55 ° C<br>0.8 0.8<br>0.7 25 ° C 25 ° C<br>0.6<br>0.6<br>150 ° C<br>0.5 0.4<br>150 ° C<br>0.4<br>0.2<br>0.3<br>0.2 0.0<br>0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>, COLL−EMITT SATURATION VOLTAGE (V) , COLL−EMITT SATURATION VOLTAGE (V)<br>CE(sat) CE(sat)<br>V V<br>, BASE−EMITT SATURATION VOLTAGE (V) , BASE−EMITT SATURATION VOLTAGE (V)<br>BE(sat) BE(sat)<br>V V<br>**----- End of picture text -----**<br>
**Figure 27. VBE(sat) at IC/IB = 10**
**Figure 28. VBE(sat) at IC/IB = 20**
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**7**
**BC846BDW1, BC847BDW1, BC848CDW1**
## **TYPICAL CHARACTERISTICS − BC848CDW1**
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**----- Start of picture text -----**<br>
1.0 1000<br>VCE = 5 V VCE = 10 V<br>0.9 −55 ° C TA = 25 ° C<br>0.8<br>25 ° C<br>0.7<br>0.6<br>0.5 100<br>0.4 150 ° C<br>0.3<br>0.2<br>0.1<br>0.0 10<br>0.0001 0.001 0.01 0.1 0.1 1 10 100<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (mA)<br>Figure 29. VBE(on) at VCE = 5 V Figure 30. Current − Gain − Bandwidth<br>Product<br>10 2<br>TA = 25 ° C TA = 25 ° C<br>I C = I C =<br>1.6 10 mA 20 mA<br>Cib<br>1.2 I C =<br>50 mA<br>Cob 0.8 IC =<br>100 mA<br>0.4<br>1 0<br>0.1 1 10 100 0.01 0.1 1 10 100<br>VR, REVERSE VOLTAGE (V) IB, BASE CURRENT (mA)<br>Figure 31. Capacitances Figure 32. Collector Saturation Region<br>−0.2 VCE = 5 V<br>−0.6<br>−1<br>−1.4<br>−1.8 � VB, for VBE<br>−55 ° C to 150 ° C<br>−2.2<br>−2.6<br>−3<br>0.1 1 10 100<br>IB, BASE CURRENT (mA)<br>(V)<br>PRODUCT<br>, BASE−EMITTER VOLTAGE<br>BE(on) , CURRENT−GAIN − BANDWIDTH<br>V fT<br>AGE (V)<br>C, CAPACITANCE (pF)<br>, COLLECTOR−EMITTER VOLT-<br>CE<br>V<br>C)<br>°<br>(mV/<br>, TEMPERATURE COEFFICIENT<br>VB<br>�<br>**----- End of picture text -----**<br>
**Figure 33. Base−Emitter Temperature Coefficient**
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**8**
**BC846BDW1, BC847BDW1, BC848CDW1**
**==> picture [490 x 383] intentionally omitted <==**
**----- Start of picture text -----**<br>
1.0<br>D = 0.5<br>0.2<br>0.1<br>0.1<br>0.05<br>0.02 P (pk) ZR D CURVES APPLY FOR POWER � � JAJA (t) = r(t) R = 328 � C/W MAX � JA<br>PULSE TRAIN SHOWN<br>0.01 0.01 t1 T READ TIME AT t J(pk) − TC = P(pk) 1 R � JC(t)<br>t2<br>DUTY CYCLE, D = t1/t2<br>SINGLE PULSE<br>0.001<br>0 1.0 10 100 1.0�k 10�k 100�k 1.0�M<br>t, TIME (ms)<br>Figure 34. Thermal Response<br>-200 The safe operating area curves indicate IC−VCE limits<br>1 s 3 ms of the transistor that must be observed for reliable<br>-100<br>operation. Collector load lines for specific circuits must<br>-50 TA = 25°C TJ = 25°C fall below the limits indicated by the applicable curve.The data of Figure 35 is based upon TJ(pk) = 150°C; TC<br>or TA is variable depending upon conditions. Pulse<br>BC558 curves are valid for duty cycles to 10% provided TJ(pk) ≤<br>-10 BC557 150°C. TJ(pk) may be calculated from the data in<br>BC556 Figure 34. At high case or ambient temperatures,<br>-5.0 BONDING WIRE LIMIT thermal limitations will reduce the power that can be<br>THERMAL LIMIT handled to values less than the limitations imposed by the<br>-2.0 SECOND BREAKDOWN LIMIT secondary breakdown.<br>-1.0 -5.0 -10 -30 -45 -65 -100<br>VCE, COLLECTOR-EMITTER VOLTAGE (V)<br>r(t), TRANSIENT THERMAL<br>RESISTANCE (NORMALIZED)<br>IC, COLLECTOR CURRENT (mA)<br>**----- End of picture text -----**<br>
**Figure 35. Active Region Safe Operating Area**
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**BC846BDW1, BC847BDW1, BC848CDW1**
## **ORDERING INFORMATION**
|**ORDERING INFORMATION**||||
|---|---|---|---|
|**Device**|**Markings**|**Package**|**Shipping**†|
|BC846BDW1T1G|1B|SOT−363<br>(Pb−Free)|3,000 / Tape & Reel|
|SBC846BDW1T1G*|1B|SOT−363<br>(Pb−Free)|3,000 / Tape & Reel|
|BC847BDW1T1G|1F|SOT−363<br>(Pb−Free)|3,000 / Tape & Reel|
|SBC847BDW1T1G*|1F|SOT−363<br>(Pb−Free)|3,000 / Tape & Reel|
|BC847BDW1T3G|1F|SOT−363<br>(Pb−Free)|10,000 / Tape & Reel|
|SBC847BDW1T3G*|1F|SOT−363<br>(Pb−Free)|10,000 / Tape & Reel|
|NSVBC847BDW1T2G*|1F|SOT−363<br>(Pb−Free)|10,000 / Tape & Reel|
|BC847CDW1T1G|1G|SOT−363<br>(Pb−Free)|3,000 / Tape & Reel|
|SBC847CDW1T1G*|1G|SOT−363<br>(Pb−Free)|3,000 / Tape & Reel|
|BC848CDW1T1G|1L|SOT−363<br>(Pb−Free)|3,000 / Tape & Reel|
|NSVBC848CDW1T1G*|1L|SOT−363<br>(Pb−Free)|3,000 / Tape & Reel|
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
*S and NSV Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable.
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**10**
**BC846BDW1, BC847BDW1, BC848CDW1**
## **PACKAGE DIMENSIONS**
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SC−88/SC70−6/SOT−363<br>CASE 419B−02<br>2X ISSUE Y<br>aaa H D<br>- D H NOTES:1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETERS.<br>A 3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH,<br>D GAGE PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRU-<br>PLANE SIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END.<br>4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF<br>6 5 4 THE PLASTIC BODY AND DATUM H.<br>L2 L 5. DATUMS A AND B ARE DETERMINED AT DATUM H.<br>E E1 DETAIL A 6. LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP.DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE<br>7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION.<br>1 2 3<br>ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN<br>EXCESS OF DIMENSION b AT MAXIMUM MATERIAL CONDI-<br>2X aaa C TION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER<br>bbb H D 2X 3 TIPS RADIUS OF THE FOOT.<br>e MILLIMETERS INCHES<br>DIM MIN NOM MAX MIN NOM MAX<br>B ‘on 6X b : A −−− −−− 1.10 −−− −−− 0.043<br>ddd M C A-B D A1 0.00 −−− 0.10 0.000 −−− 0.004<br>TOP VIEW A2 0.70 0.90 1.00 0.027 0.035 0.039<br>b 0.15 0.20 0.25 0.006 0.008 0.010<br>C 0.08 0.15 0.22 0.003 0.006 0.009<br>A2 DETAIL A D 1.80 2.00 2.20 0.070 0.078 0.086<br>A E 2.00 2.10 2.20 0.078 0.082 0.086<br>E1 1.15 1.25 1.35 0.045 0.049 0.053<br>e 0.65 BSC 0.026 BSC<br>SS aaaa L 0.26 0.36 0.46 0.010 0.014 0.018<br>L2 0.15 BSC 0.006 BSC<br>aaa 0.15 0.006<br>bbb 0.30 0.012<br>6X ccc C ccc 0.10 0.004<br>A1 C SEATINGPLANE c a ddd 0.10 a 0.004<br>SIDE VIEW END VIEW STYLE 1:<br>PIN 1. EMITTER 2<br>RECOMMENDED 2. BASE 2<br>SOLDERING FOOTPRINT* 3. COLLECTOR 1<br> 4. EMITTER 1<br> 5. BASE 1<br>0.306X 0.666X 6. COLLECTOR 2<br>To or 2.50<br>0.65 suo<br>PITCH<br>DIMENSIONS: MILLIMETERS<br>*For additional information on our Pb−Free strategy and soldering<br>details, please download the ON Semiconductor Soldering and<br>Mounting Techniques Reference Manual, SOLDERRM/D.<br>**----- End of picture text -----**<br>
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onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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