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BC847AWT1G
Bipolar (BJT) Single Transistor, NPN, 45 V, 100 mA, 200 mW, SOT-323, Surface Mount
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- Manufacturer: ONSEMI
- Product type: Single Bipolar Junction Transistors - BJT
- Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:100MHz; Power Dissipation Pd:200mW; DC Collector Current:100mA; DC Current Gain hFE:110hFE
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: -
- Qualification: AEC-Q101
- Power Dissipation: 200mW
- Transistor Mounting: Surface Mount
- Transistor Polarity: NPN
- Transition Frequency: 100MHz
- Transistor Case Style: SOT-323
- DC Current Gain hFE Min: 110hFE
- Operating Temperature Max: 150°C
- Continuous Collector Current: 100mA
- Collector Emitter Voltage Max: 45V
| Delivery and price | |
|---|---|
| Units per pack | 1500 |
| Price | 0.033 € |
| Current stock | 1000+ |
| Lead time | 7 days |
Datasheet
BC846, BC847, BC848 **MAXIMUM RATINGS** ## General Purpose Transistors ## **NPN Silicon** These transistors are designed for general purpose amplifier applications. They are housed in the SC−70/SOT−323 which is designed for low power surface mount applications. ## **Features** - S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable - These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ## **www.onsemi.com** **==> picture [70 x 90] intentionally omitted <==** **----- Start of picture text -----**<br> COLLECTOR<br>3<br>1<br>BASE<br>®<br>2<br>EMITTER<br>**----- End of picture text -----**<br> **Rating Symbol Value Unit** Collector-Emitter Voltage VCEO V 3 BC846 65 **SC−70/SOT−323** BC847 45 **CASE 419** BC848 30 1 **STYLE 3** 2 Collector-Base Voltage VCBO V BC846 80 BC847 50 BC848 30 **MARKING DIAGRAM** Emitter-Base Voltage VEBO V BC846 6.0 BC847 6.0 BC848 5.0 XX M Collector Current − Continuous IC 100 mAdc ~~aie~~ Stresses exceeding those listed in the Maximum Ratings table may damage ou the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. XX XX = Specific Device Code M = Month Code = Pb−Free Package (Note: Microdot may be in either location) **THERMAL CHARACTERISTICS Characteristic Symbol Max Unit** Total Device Dissipation FR−5 Board, (Note 1) TA = 25 ° C PD 200 mW Thermal Resistance, Junction−to−Ambient R JA 620 ° C/W Junction and Storage Temperature TJ, Tstg −55 to ° C +150 ~~=a~~ 1. FR−5 = 1.0 x 0.75 x 0.062 in. **ORDERING INFORMATION** See detailed ordering, marking and shipping information in the package dimensions section on page 12 of this data sheet. Publication Order Number: **BC846AWT1/D** **1** © Semiconductor Components Industries, LLC, 2015 **April, 2015 − Rev. 12** **BC846, BC847, BC848** ## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) |**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted)|||||| |---|---|---|---|---|---| |**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**| |**OFF CHARACTERISTICS**|||||| |Collector−Emitter Breakdown Voltage<br>BC846 Series<br>(IC= 10 mA)<br>BC847 Series<br>BC848 Series|V(BR)CEO|65<br>45<br>30|−<br>−<br>−|−<br>−<br>−|V| |Collector−Emitter Breakdown Voltage<br>BC846 Series<br>(IC= 10�A, VEB= 0)<br>BC847 Series<br>BC848 Series|V(BR)CES|80<br>50<br>30|−<br>−<br>−|−<br>−<br>−|V| |Collector−Base Breakdown Voltage<br>BC846 Series<br>(IC= 10�A)<br>BC847 Series<br>BC848 Series|V(BR)CBO|80<br>50<br>30|−<br>−<br>−|−<br>−<br>−|V| |Emitter−Base Breakdown Voltage<br>BC846 Series<br>(IE= 1.0�A)<br>BC847 Series<br>BC848 Series|V(BR)EBO|6.0<br>6.0<br>5.0|−<br>−<br>−|−<br>−<br>−|V| |Collector Cutoff Current (VCB= 30 V)<br>(VCB= 30 V, TA= 150°C)|ICBO|−<br>−|−<br>−|15<br>5.0|nA<br>�A| |**ON CHARACTERISTICS**|||||| |DC Current Gain<br>BC846A, BC847A, BC848A<br>(IC= 10�A, VCE= 5.0 V)<br>BC846B, BC847B, BC848B<br>BC847C, BC848C<br>(IC= 2.0 mA, VCE= 5.0 V)<br>BC846A, BC847A, BC848A<br>BC846B, BC847B, BC848B<br>BC847C, BC848C|hFE|−<br>−<br>−<br>110<br>200<br>420|90<br>150<br>270<br>180<br>290<br>520|−<br>−<br>−<br>220<br>450<br>800|−| |Collector−Emitter Saturation Voltage (IC= 10 mA, IB= 0.5 mA)<br>Base−Emitter Saturation Voltage(IC= 100 mA, IB= 5.0 mA)|VCE(sat)|−<br>−|−<br>−|0.25<br>0.6|V| |Base−Emitter Saturation Voltage (IC= 10 mA, IB= 0.5 mA)<br>Base−Emitter Saturation Voltage(IC= 100 mA, IB= 5.0 mA)|VBE(sat)|−<br>−|0.7<br>0.9|−<br>−|V| |Base−Emitter Voltage (IC= 2.0 mA, VCE= 5.0 V)<br>Base−Emitter Voltage(IC= 10 mA, VCE= 5.0 V)|VBE(on)|580<br>−|660<br>−|700<br>770|mV| |**SMALL−SIGNAL CHARACTERISTICS**|||||| |Current−Gain − Bandwidth Product<br>(IC= 10 mA, VCE= 5.0 Vdc, f = 100 MHz)|fT|100|−|−|MHz| |Output Capacitance (VCB= 10 V, f = 1.0 MHz)|Cobo|−|−|4.5|pF| |Noise Figure (IC= 0.2 mA, VCE= 5.0 Vdc, RS= 2.0 k�, f = 1.0 kHz, BW = 200 Hz)|NF|−|−|10|dB| **www.onsemi.com** **2** **BC846, BC847, BC848** ## **BC846A, BC847A, BC848A** **==> picture [488 x 378] intentionally omitted <==** **----- Start of picture text -----**<br> 300 300<br>150 ° C VCE = 1 V 150 ° C VCE = 5 V<br>200 200<br>25 ° C 25 ° C<br>100 −55 ° C 100 −55 ° C<br>0 0<br>0.001 0.01 0.1 1 0.001 0.01 0.1 1<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>Figure 1. DC Current Gain vs. Collector Figure 2. DC Current Gain vs. Collector<br>Current Current<br>0.18<br>0.16 IC/IB = 20 150 ° C<br>0.14<br>0.12 25 ° C<br>0.10<br>0.08<br>0.06 −55 ° C<br>0.04<br>0.02<br>0<br>0.0001 0.001 0.01 0.1<br>IC, COLLECTOR CURRENT (A)<br>, DC CURRENT GAIN , DC CURRENT GAIN<br>FE FE<br>h h<br>, COLLECTOR−EMITTER<br>SATURATION VOLTAGE (V)<br>CE(sat)<br>V<br>**----- End of picture text -----**<br> **Figure 3. Collector Emitter Saturation Voltage vs. Collector Current** **==> picture [491 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> 1.0 1.2<br>0.9 IC/IB = 20 −55 ° C 1.1 VCE = 5 V<br>1.0<br>0.8 25 ° C 0.9 −55 ° C<br>0.7 0.8 25 ° C<br>0.6 150 ° C 0.7<br>0.6<br>0.5 150 ° C<br>0.5<br>0.4<br>0.4<br>0.3 0.3<br>0.2 0.2<br>0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>, BASE−EMITTER<br>BE(sat)<br>V , BASE−EMITTER VOLTAGE (V)<br>SATURATION VOLTAGE (V)<br>BE(on)<br>V<br>**----- End of picture text -----**<br> **Figure 4. Base Emitter Saturation Voltage vs. Collector Current** **Figure 5. Base Emitter Voltage vs. Collector Current** **www.onsemi.com** **3** **BC846, BC847, BC848** ## **BC846A, BC847A, BC848A** **==> picture [487 x 384] intentionally omitted <==** **----- Start of picture text -----**<br> 2.0 1.0<br>TA = 25°C -55°C to +125°C<br>1.2<br>1.6<br>IC = 200 mA 1.6<br>1.2<br>IC = IC = IC = 50 mA IC = 100 mA<br>2.0<br>10 mA 20 mA<br>0.8<br>2.4<br>0.4<br>2.8<br>0<br>0.02 0.1 1.0 10 20 0.2 1.0 10 100<br>IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Figure 6. Collector Saturation Region Figure 7. Base−Emitter Temperature Coefficient<br>10 400<br>300<br>7.0 T A = 25°C<br>200<br>5.0 C ib<br>3.0 10080 VTACE = 25 = 10 V°C<br>Cob<br>60<br>2.0<br>40<br>30<br>1.0 20<br>0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 20 40 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50<br>VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc)<br>C)°<br>VCE, COLLECTOR-EMITTER VOLTAGE (V) VB, TEMPERATURE COEFFICIENT (mV/<br>θ<br>C, CAPACITANCE (pF)<br>f�, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)T<br>**----- End of picture text -----**<br> **Figure 8. Capacitances** **Figure 9. Current−Gain − Bandwidth Product** **www.onsemi.com** **4** **BC846, BC847, BC848** **==> picture [40 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> BC846B<br>**----- End of picture text -----**<br> **==> picture [488 x 382] intentionally omitted <==** **----- Start of picture text -----**<br> 600 600<br>150 ° C VCE = 1 V 150 ° C VCE = 5 V<br>500 500<br>400 25 ° C 400<br>25 ° C<br>300 300<br>−55 ° C<br>200 200 −55 ° C<br>100 100<br>0 0<br>0.001 0.01 0.1 1 0.001 0.01 0.1 1<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>Figure 10. DC Current Gain vs. Collector Figure 11. DC Current Gain vs. Collector<br>Current Current<br>0.30<br>IC/IB = 20 150 ° C<br>0.25<br>0.20<br>25 ° C<br>0.15<br>0.10<br>−55 ° C<br>0.05<br>0<br>0.0001 0.001 0.01 0.1<br>IC, COLLECTOR CURRENT (A)<br>, DC CURRENT GAIN , DC CURRENT GAIN<br>FE FE<br>h h<br>, COLLECTOR−EMITTER<br>SATURATION VOLTAGE (V)<br>CE(sat)<br>V<br>**----- End of picture text -----**<br> **Figure 12. Collector Emitter Saturation Voltage vs. Collector Current** **==> picture [491 x 172] intentionally omitted <==** **----- Start of picture text -----**<br> 1.1 1.2<br>1.0 IC/IB = 20 −55 ° C 1.1 VCE = 5 V<br>1.0<br>0.9 25 ° C 0.9 −55 ° C<br>0.8<br>0.8<br>0.7 25 ° C<br>150 ° C 0.7<br>0.6<br>0.6 150 ° C<br>0.5<br>0.5<br>0.4 0.4<br>0.3 0.3<br>0.2 0.2<br>0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>, BASE−EMITTER<br>BE(sat)<br>V , BASE−EMITTER VOLTAGE (V)<br>SATURATION VOLTAGE (V)<br>BE(on)<br>V<br>**----- End of picture text -----**<br> **Figure 13. Base Emitter Saturation Voltage vs. Collector Current** **Figure 14. Base Emitter Voltage vs. Collector Current** **www.onsemi.com** **5** **BC846, BC847, BC848** ## **BC846B** **==> picture [484 x 390] intentionally omitted <==** **----- Start of picture text -----**<br> 2.0 1.0<br>TA = 25°C<br>1.6 1.4<br>20 mA 50 mA 100 mA 200 mA<br>1.2 1.8<br>�VB for VBE<br>0.8 IC = 2.2 -55°C to 125°C<br>10 mA<br>0.4 2.6<br>0 3.0<br>0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200<br>IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Figure 15. Collector Saturation Region Figure 16. Base−Emitter Temperature Coefficient<br>40<br>TA = 25°C VCE = 5 V<br>500 °<br>TA = 25 C<br>20<br>Cib<br>200<br>10<br>100<br>6.0<br>50<br>4.0 Cob<br>20<br>2.0<br>0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 1.0 5.0 10 50 100<br>VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)<br>C)°<br>VB, TEMPERATURE COEFFICIENT (mV/<br>VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) θ<br>C, CAPACITANCE (pF)<br>f�, CURRENT-GAIN - BANDWIDTH PRODUCTT<br>**----- End of picture text -----**<br> **Figure 17. Capacitance** **Figure 18. Current−Gain − Bandwidth Product** **www.onsemi.com** **6** **BC846, BC847, BC848** ## **BC847B, BC848B** **==> picture [491 x 594] intentionally omitted <==** **----- Start of picture text -----**<br> 600 600<br>150 ° C VCE = 1 V 150 ° C VCE = 5 V<br>500 500<br>400 400<br>25 ° C 25 ° C<br>300 300<br>200 −55 ° C 200 −55 ° C<br>100 100<br>0 0<br>0.001 0.01 0.1 1 0.001 0.01 0.1 1<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>Figure 19. DC Current Gain vs. Collector Figure 20. DC Current Gain vs. Collector<br>Current Current<br>0.30<br>IC/IB = 20<br>0.25<br>150 ° C<br>0.20<br>25 ° C<br>0.15<br>0.10<br>−55 ° C<br>0.05<br>0<br>0.0001 0.001 0.01 0.1<br>IC, COLLECTOR CURRENT (A)<br>Figure 21. Collector Emitter Saturation Voltage<br>vs. Collector Current<br>1.1 1.2<br>1.0 IC/IB = 20 −55 ° C 1.1 VCE = 5 V<br>1.0<br>0.9<br>25 ° C 0.9 −55 ° C<br>0.8<br>0.8 25 ° C<br>0.7<br>150 ° C 0.7<br>0.6<br>0.6 150 ° C<br>0.5<br>0.5<br>0.4<br>0.4<br>0.3 0.3<br>0.2 0.2<br>0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>, DC CURRENT GAIN , DC CURRENT GAIN<br>FE FE<br>h h<br>, COLLECTOR−EMITTER<br>SATURATION VOLTAGE (V)<br>CE(sat)<br>V<br>, BASE−EMITTER<br>BE(sat)<br>V , BASE−EMITTER VOLTAGE (V)<br>SATURATION VOLTAGE (V)<br>BE(on)<br>V<br>**----- End of picture text -----**<br> **Figure 22. Base Emitter Saturation Voltage vs. Collector Current** **Figure 23. Base Emitter Voltage vs. Collector Current** **www.onsemi.com** **7** **BC846, BC847, BC848** ## **BC847B, BC848B** **==> picture [487 x 394] intentionally omitted <==** **----- Start of picture text -----**<br> 2.0 1.0<br>TA = 25°C -55°C to +125°C<br>1.2<br>1.6<br>IC = 200 mA 1.6<br>1.2<br>IC = IC = IC = 50 mA IC = 100 mA<br>2.0<br>10 mA 20 mA<br>0.8<br>2.4<br>0.4<br>2.8<br>0<br>0.02 0.1 1.0 10 20 0.2 1.0 10 100<br>IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Figure 24. Collector Saturation Region Figure 25. Base−Emitter Temperature<br>Coefficient<br>10 400<br>300<br>7.0 T A = 25°C<br>200<br>5.0 C ib<br>3.0 10080 VTACE = 25 = 10 V°C<br>Cob<br>60<br>2.0<br>40<br>30<br>1.0 20<br>0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 20 40 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50<br>VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc)<br>C)°<br>VCE, COLLECTOR-EMITTER VOLTAGE (V) VB, TEMPERATURE COEFFICIENT (mV/<br>θ<br>C, CAPACITANCE (pF)<br>f�, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)T<br>**----- End of picture text -----**<br> **Figure 26. Capacitances** **Figure 27. Current−Gain − Bandwidth Product** **www.onsemi.com** **8** **BC846, BC847, BC848** ## **BC847C, BC848C** **==> picture [489 x 380] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 150 ° C 1000<br>900 VCE = 1 V 900 150 ° C V CE = 5 V<br>800 800<br>700 700<br>25 ° C<br>600 600 25 ° C<br>500 500<br>400 ° 400<br>−55 C<br>−55 ° C<br>300 300<br>200 200<br>100 100<br>0 0<br>0.001 0.01 0.1 1 0.001 0.01 0.1 1<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>Figure 28. DC Current Gain vs. Collector Figure 29. DC Current Gain vs. Collector<br>Current Current<br>0.30<br>IC/IB = 20<br>0.25<br>150 ° C<br>0.20<br>25 ° C<br>0.15<br>0.10<br>−55 ° C<br>0.05<br>0<br>0.0001 0.001 0.01 0.1<br>IC, COLLECTOR CURRENT (A)<br>, DC CURRENT GAIN , DC CURRENT GAIN<br>FE FE<br>h h<br>, COLLECTOR−EMITTER<br>SATURATION VOLTAGE (V)<br>CE(sat)<br>V<br>**----- End of picture text -----**<br> **Figure 30. Collector Emitter Saturation Voltage vs. Collector Current** **==> picture [491 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> 1.1 1.2<br>1.0 IC/IB = 20 −55 ° C 1.1 VCE = 5 V<br>1.0<br>0.9<br>25 ° C 0.9 −55 ° C<br>0.8<br>0.7 0.8 25 ° C<br>150 ° C 0.7<br>0.6<br>0.6 150 ° C<br>0.5<br>0.5<br>0.4<br>0.4<br>0.3 0.3<br>0.2 0.2<br>0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>, BASE−EMITTER<br>BE(sat)<br>V , BASE−EMITTER VOLTAGE (V)<br>SATURATION VOLTAGE (V)<br>BE(on)<br>V<br>**----- End of picture text -----**<br> **Figure 31. Base Emitter Saturation Voltage vs. Collector Current** **Figure 32. Base Emitter Voltage vs. Collector Current** **www.onsemi.com** **9** **BC846, BC847, BC848** ## **BC847C, BC848C** **==> picture [487 x 394] intentionally omitted <==** **----- Start of picture text -----**<br> 2.0 1.0<br>TA = 25°C -55°C to +125°C<br>1.2<br>1.6<br>IC = 200 mA 1.6<br>1.2<br>IC = IC = IC = 50 mA IC = 100 mA<br>2.0<br>10 mA 20 mA<br>0.8<br>2.4<br>0.4<br>2.8<br>0<br>0.02 0.1 1.0 10 20 0.2 1.0 10 100<br>IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Figure 33. Collector Saturation Region Figure 34. Base−Emitter Temperature<br>Coefficient<br>10 400<br>300<br>7.0 T A = 25°C<br>200<br>5.0 C ib<br>3.0 10080 VTACE = 25 = 10 V°C<br>Cob<br>60<br>2.0<br>40<br>30<br>1.0 20<br>0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 20 40 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50<br>VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc)<br>C)°<br>VCE, COLLECTOR-EMITTER VOLTAGE (V) VB, TEMPERATURE COEFFICIENT (mV/<br>θ<br>C, CAPACITANCE (pF)<br>f�, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)T<br>**----- End of picture text -----**<br> **Figure 35. Capacitances** **Figure 36. Current−Gain − Bandwidth Product** **www.onsemi.com** **10** **BC846, BC847, BC848** **==> picture [491 x 382] intentionally omitted <==** **----- Start of picture text -----**<br> 1 1<br>100 mS 10 mS 100 mS 10 mS<br>1 mS 1 mS<br>0.1 1 S 0.1 1 S<br>Thermal Limit Thermal Limit<br>0.01 0.01<br>0.001 0.001<br>1 10 100 0.1 1 10 100<br>VCE, COLLECTOR EMITTER VOLTAGE (V) VCE, COLLECTOR EMITTER VOLTAGE (V)<br>Figure 37. Safe Operating Area for Figure 38. Safe Operating Area for<br>BC846A, BC846B BC847A, BC847B, BC847C<br>1<br>100 mS 10 mS<br>1 mS<br>0.1 1 S<br>Thermal Limit<br>0.01<br>0.001<br>0.1 1 10 100<br>VCE, COLLECTOR EMITTER VOLTAGE (V)<br>, COLLECTOR CURRENT (A) , COLLECTOR CURRENT (A)<br>IC IC<br>, COLLECTOR CURRENT (A)<br>IC<br>**----- End of picture text -----**<br> **Figure 39. Safe Operating Area for BC848A, BC848B, BC848C** **www.onsemi.com** **11** **BC846, BC847, BC848** ## **DEVICE ORDERING AND SPECIFIC MARKING INFORMATION** |**Device**|**Specific Marking Code**|**Package**|**Shipping**†| |---|---|---|---| |BC846BWT1G|1B|SC−70 (SOT−323)<br>(Pb−Free)|3,000 / Tape & Reel| |SBC846BWT1G*|||| |BC847AWT1G|1E||3,000 / Tape & Reel| |SBC847AWT1G*|||| |BC847BWT1G|1F||3,000 / Tape & Reel| |SBC847BWT1G*|||| |BC847CWT1G|1G||3,000 / Tape & Reel| |SBC847CWT1G*|||| |BC847CWT3G|1G||10,000 / Tape & Reel| |SBC847CWT3G*|||| |BC848BWT1G|1K||3,000 / Tape & Reel| |NSVBC848BWT1G*|||| |BC848CWT1G|1L||| †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. **www.onsemi.com** **12** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **==> picture [37 x 36] intentionally omitted <==** **SC−70 (SOT−323)** CASE 419 ISSUE P **==> picture [81 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> DATE 07 OCT 2021<br>**----- End of picture text -----**<br> **SCALE 4:1** ## **GENERIC MARKING DIAGRAM** **==> picture [116 x 78] intentionally omitted <==** **----- Start of picture text -----**<br> XX M �<br>�<br>1<br>XX = Specific Device Code<br>M = Date Code<br>� = Pb−Free Package<br>**----- End of picture text -----**<br> *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ � ”, may or may not be present. Some products may not follow the Generic Marking. **==> picture [191 x 63] intentionally omitted <==** **----- Start of picture text -----**<br> STYLE 1: STYLE 2: STYLE 3:<br>CANCELLED PIN 1. ANODE PIN 1. BASE<br>2. N.C. 2. EMITTER<br>3. CATHODE 3. COLLECTOR<br>STYLE 6: STYLE 7: STYLE 8:<br>PIN 1. EMITTER PIN 1. BASE PIN 1. GATE<br> 2. BASE 2. EMITTER 2. SOURCE<br> 3. COLLECTOR 3. COLLECTOR 3. DRAIN<br>**----- End of picture text -----**<br> **==> picture [206 x 63] intentionally omitted <==** **----- Start of picture text -----**<br> STYLE 4: STYLE 5:<br>PIN 1. CATHODE PIN 1. ANODE<br>2. CATHODE 2. ANODE<br>3. ANODE 3. CATHODE<br>STYLE 9: STYLE 10: STYLE 11:<br>PIN 1. ANODE PIN 1. CATHODE PIN 1. CATHODE<br> 2. CATHODE 2. ANODE 2. CATHODE<br> 3. CATHODE-ANODE 3. ANODE-CATHODE 3. CATHODE<br>**----- End of picture text -----**<br> ## **DOCUMENT NUMBER: 98ASB42819B** **DESCRIPTION: SC−70 (SOT−323)** Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **PAGE 1 OF 1** **onsemi** and are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. www.onsemi.com © Semiconductor Components Industries, LLC, 2019 **onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **PUBLICATION ORDERING INFORMATION** **LITERATURE FULFILLMENT** : **TECHNICAL SUPPORT Email Requests to:** orderlit@onsemi.com **North American Technical Support: Europe, Middle East and Africa Technical Support:** Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 00421 33 790 2910 **onsemi Website:** www.onsemi.com Phone: 011 421 33 790 2910 For additional information, please contact your local Sales Representative ◊ **==> picture [232 x 43] intentionally omitted <==**
Updated at March 24, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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