BC846SH6327XTSA1

Bipolar Transistor Array, Dual NPN, 65 V, 100 mA, 250 mW

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Manufacturer: INFINEON
Product type: Bipolar Junction Transistor Arrays - BJT
Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:65V; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain hFE:200hFE; Transistor Case Style:SOT-363; No.
MSL: MSL 1 - Unlimited
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 6Pins
Product Range: -
Qualification: AEC-Q101
Transistor Mounting: Surface Mount
Transistor Polarity: Dual NPN
Power Dissipation NPN: 250mW
Power Dissipation PNP: -
Transistor Case Style: SOT-363
Transition Frequency NPN: 250MHz
Transition Frequency PNP: -
Operating Temperature Max: 150°C
DC Current Gain hFE Min NPN: 200hFE
DC Current Gain hFE Min PNP: -
Continuous Collector Current NPN: 100mA
Continuous Collector Current PNP: -
Collector Emitter Voltage Max NPN: 65V
Collector Emitter Voltage Max PNP: -

Delivery and price
Units per pack	5000
Price	0.038 €
Current stock	N/A
Lead time	30 days

Datasheet

Updated at March 1, 2026