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BC846PNH6327XTSA1
Bipolar Transistor Array, NPN, PNP, 65 V, 65 V, 100 mA, 100 mA, 250 mW
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- Manufacturer: INFINEON
- Product type: Bipolar Junction Transistor Arrays - BJT
- Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:65V; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain hFE:200hFE; Transistor Case Style:SOT-363; No.
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 6Pins
- Product Range: BC846PN Series
- Qualification: AEC-Q101
- Transistor Mounting: Surface Mount
- Transistor Polarity: NPN, PNP
- Power Dissipation NPN: 250mW
- Power Dissipation PNP: 250mW
- Transistor Case Style: SOT-363
- Transition Frequency NPN: 250MHz
- Transition Frequency PNP: 250MHz
- Operating Temperature Max: 150°C
- DC Current Gain hFE Min NPN: 200hFE
- DC Current Gain hFE Min PNP: 200hFE
- Continuous Collector Current NPN: 100mA
- Continuous Collector Current PNP: 100mA
- Collector Emitter Voltage Max NPN: 65V
- Collector Emitter Voltage Max PNP: 65V
| Delivery and price | |
|---|---|
| Units per pack | 1500 |
| Price | 0.072 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
**BC846PN/UPN_BC847PN** ## **NPN/PNP Silicon AF Transistor Arrays** - For AF input stage and driver applications - High current gain - Low collector-emitter saturation voltage - Two (galvanic) internal isolated NPN/PNP - transistor in one package - Pb-free (RoHS compliant) package - Qualified according AEC Q101 ## **BC846PN BC846UPN BC847PN** **==> picture [49 x 67] intentionally omitted <==** **----- Start of picture text -----**<br> C1 B2 E2<br>6 5 4<br>TR2<br>TR1<br>1 2 3<br>E1 B1 C2<br>EHA07177<br>**----- End of picture text -----**<br> |**Type**|**Marking**|**g**<br>**Pin Configuration**|**g**<br>**Pin Configuration**|**g**<br>**Pin Configuration**|**g**<br>**Pin Configuration**|**g**<br>**Pin Configuration**|**g**<br>**Pin Configuration**|**Package**| |---|---|---|---|---|---|---|---|---| |BC846PN<br>BC846UPN<br>BC847PN|1Os<br>1Os<br>1Ps|1=E1<br>1=E1<br>1=E1|2=B1<br>2=B1<br>2=B1|3=C2<br>3=C2<br>3=C2|4=E2<br>4=E2<br>4=E2|5=B2<br>5=B2<br>5=B2|6=C1<br>6=C1<br>6=C1|SOT363<br>SC74<br>SOT363| 2011-10-05 1 **BC846PN/UPN_BC847PN** ## **Maximum Ratings** |**Maximum Ratings**|||| |---|---|---|---| |**Parameter**|**Symbol**|**Value**|**Unit**| |Collector-emitter voltage<br>BC846PN/UPN<br>BC847PN|_V_CEO|65<br>45|V| |Collector-emitter voltage<br>BC846PN/UPN<br>BC847PN|_V_CES|80<br>50|| |Collector-base voltage<br>BC846PN/UPN<br>BC847PN|_V_CBO|80<br>50|| |Emitter-base voltage|_V_EBO|6|| |Collector current|_I_C|100|mA| |Peak collector current,_t_p ≤10 ms|_I_CM|200|| |Total power dissipation-<br>_T_S ≤115°C, BC846PN, BC847PN<br>_T_S ≤118°C, BC846UPN|_P_tot|250<br>250|mW| |Junction temperature|_T_j|150|°C| |Storage temperature|_T_stg|-65 ... 150|| |**Thermal Resistance**|||| |**Parameter**|**Symbol**|**Value**|**Unit**| |Junction - soldering point1)<br>BC846PN, BC847PN<br>BC846UPN|_R_thJS|≤140<br>≤130|K/W| > 1For calculation of _R_ thJA please refer to Application Note AN077 (Thermal Resistance Calculation) 2011-10-05 2 **BC846PN/UPN_BC847PN** |**Electrical Characteristics**at_T_A= 25°C, unless otherwise specified|**Electrical Characteristics**at_T_A= 25°C, unless otherwise specified|**Electrical Characteristics**at_T_A= 25°C, unless otherwise specified|**Electrical Characteristics**at_T_A= 25°C, unless otherwise specified|**Electrical Characteristics**at_T_A= 25°C, unless otherwise specified|**Electrical Characteristics**at_T_A= 25°C, unless otherwise specified| |---|---|---|---|---|---| |**Parameter**|**Symbol**|**Values**|||**Unit**| |||**min.**|**typ.**|**max.**|| |**DC Characteristics**|||||| |Collector-emitter breakdown voltage<br>_I_C= 10 mA,_I_B= 0 , BC846PN/UPN<br>_I_C= 10 mA,_I_B= 0 , BC847PN|_V_(BR)CEO|65<br>45|-<br>-|-<br>-|V| |Collector-base breakdown voltage<br>_I_C= 10 µA,_I_E= 0 , BC846PN/UPN<br>_I_C= 10 µA,_I_E= 0 , BC847PN|_V_(BR)CBO|80<br>50|-<br>-|-<br>-|| |Collector-emitter breakdown voltage<br>_I_C= 10 µA,_V_BE= 0 , BC846PN/UPN<br>_I_C= 10 µA,_V_BE= 0 , BC847PN|_V_(BR)CES|80<br>50|-<br>-|-<br>-|| |Emitter-base breakdown voltage<br>_I_E= 1 µA,_I_C= 0|_V_(BR)EBO|6|-|-|| |Collector-base cutoff current<br>_V_CB= 50 V,_I_E= 0<br>_V_CB= 30 V,_I_E= 0 ,_T_A= 150 °C|_I_CBO|-<br>-|-<br>-|0.015<br>5|µA| |DC current gain-<br>_I_C= 10 µA,_V_CE= 5 V<br>_I_C= 2 mA,_V_CE= 5 V|_h_FE|-<br>200|250<br>290|-<br>450|-| |Collector-emitter saturation voltage1)<br>_I_C= 10 mA,_I_B= 0.5 mA<br>_I_C= 100 mA,_I_B= 5 mA|_V_CEsat|-<br>-|90<br>200|300<br>650|mV| |Base emitter saturation voltage-1)<br>_I_C= 10 mA,_I_B= 0.5 mA<br>_I_C= 100 mA,_I_B= 5 mA|_V_BEsat|-<br>-|700<br>900|-<br>-|| |Base-emitter voltage-1)<br>_I_C= 2 mA,_V_CE= 5 V<br>_I_C= 10 mA,_V_CE= 5 V|_V_BE(ON)|580<br>-|660<br>-|750<br>820|| 1Pulse test: t 300µs, D = 2% 2011-10-05 3 **BC846PN/UPN_BC847PN** |**Electrical Characteristics**at_T_A= 25°C,unless otherwise specified|**Electrical Characteristics**at_T_A= 25°C,unless otherwise specified|**Electrical Characteristics**at_T_A= 25°C,unless otherwise specified|**Electrical Characteristics**at_T_A= 25°C,unless otherwise specified|**Electrical Characteristics**at_T_A= 25°C,unless otherwise specified|**Electrical Characteristics**at_T_A= 25°C,unless otherwise specified| |---|---|---|---|---|---| |**Parameter**|**Symbol**|**Values**|||**Unit**| |||**min.**|**typ.**|**max.**|| |**AC Characteristics**|||||| |Transition frequency<br>_I_C= 10 mA,_V_CE= 5 V,_f_= 100 MHz|_f_T|-|250|-|MHz| |Collector-base capacitance<br>_V_CB= 10 V,_f_= 1 MHz|_C_cb|-|1.5|-|pF| |Emitter-base capacitance<br>_V_EB= 0.5 V,_f_= 1 MHz|_C_eb|-|8|-|| |Short-circuit input impedance<br>_I_C= 2 mA,_V_CE= 5 V,_f_= 1 kHz|_h_11e|-|4.5|-|kΩ| |Open-circuit reverse voltage transf. ratio<br>_I_C= 2 mA,_V_CE= 5 V,_f_= 1 kHz|_h_12e|-|2|-|10-4| |Short-circuit forward current transf. ratio<br>_I_C= 2 mA,_V_CE= 5 V,_f_= 1 kHz|_h_21e|-|330|-|-| |Open-circuit output admittance<br>_I_C= 2 mA,_V_CE= 5 V,_f_= 1 kHz|_h_22e|-|30|-|µS| 2011-10-05 4 **BC846PN/UPN_BC847PN** **DC current gain** _h_ FE = ƒ( _I_ C) _V_ CE = 5 V **==> picture [234 x 268] intentionally omitted <==** **----- Start of picture text -----**<br> 10 3 EHP00365<br>h FE 5 100 C<br>25 C<br>-50 C<br>10 [2]<br>5<br>10 [1]<br>5<br>10 0<br>10 -2 5 10 -1 5 10 0 5 10 1 mA 10 2<br>Ι<br> C<br>**----- End of picture text -----**<br> ## **Base-emitter saturation voltage** _I_ C = ƒ( _V_ BEsat), _h_ FE = 20 **==> picture [236 x 265] intentionally omitted <==** **----- Start of picture text -----**<br> 10 2 EHP00364<br>Ι C mA<br>100 C<br>25 C<br>-50 C<br>10 [1]<br>5<br>10 [0]<br>5<br>10 -1<br>0 0.2 0.4 0.6 0.8 V 1.2<br>V<br>BEsat<br>**----- End of picture text -----**<br> **Collector-emitter saturation voltage** _I_ C = ƒ( _V_ CEsat), _h_ FE = 20 **==> picture [233 x 267] intentionally omitted <==** **----- Start of picture text -----**<br> 10 2 EHP00367<br>mA<br>Ι<br>C<br>100 C<br>25 C<br>-50 C<br>10 1<br>5<br>0<br>10<br>5<br>10 -1<br>0 0.1 0.2 0.3 0.4 V 0.5<br>V<br>CEsat<br>**----- End of picture text -----**<br> **Collector cutoff current** _I_ CBO = ƒ( _T_ A) _V_ CBO = 30 V **==> picture [235 x 266] intentionally omitted <==** **----- Start of picture text -----**<br> 10 4 EHP00381<br>nA<br>Ι CB0<br>10 3<br>5<br>max<br>10 2<br>5<br>10 1 typ<br>5<br>0<br>10<br>5<br>10 -1<br>0 50 100 C 150<br>T A<br>**----- End of picture text -----**<br> 2011-10-05 5 **BC846PN/UPN_BC847PN** **Transition frequency** _f_ T = ƒ( _I_ C) _V_ CE = 5 V, _f_ = 100 MHz **Collector-base capacitance** _C_ cb = ƒ( _V_ CB) **Emitter-base capacitance** _C_ eb = ƒ( _V_ EB) **==> picture [233 x 267] intentionally omitted <==** **----- Start of picture text -----**<br> 10 3 EHP00363<br>MHz<br>f T 5<br>10 [2]<br>5<br>10 1<br>10 -1 5 10 0 5 10 1 mA 10 2<br>Ι<br> C<br>**----- End of picture text -----**<br> **Total power dissipation** _P_ tot = ƒ( _T_ S) BC846PN, BC847PN **==> picture [237 x 268] intentionally omitted <==** **----- Start of picture text -----**<br> 12<br>pF<br>10<br>9<br>8<br>7<br>6<br>5<br>4<br>CEB<br>3<br>2<br>1 CCB<br>0<br>0 4 8 12 16 V 22<br>V CB( V EB<br>)<br>EB<br>C<br>(<br>CB<br>C<br>**----- End of picture text -----**<br> **Total power dissipation** _P_ tot = ƒ( _T_ S) BC846UPN **==> picture [485 x 267] intentionally omitted <==** **----- Start of picture text -----**<br> 300 300<br>mW mW<br>250 250<br>225 225<br>200 200<br>175 175<br>150 150<br>125 125<br>100 100<br>75 75<br>50 50<br>25 25<br>0 0<br>0 15 30 45 60 75 90 105 120 °C 150 0 15 30 45 60 75 90 105 120 °C 150<br>T S T S<br>tot tot<br>P P<br>**----- End of picture text -----**<br> 2011-10-05 6 **BC846PN/UPN_BC847PN** **Permissible Pulse Load** _R_ thJS = ƒ( _t_ p) BC846PN, BC847PN ## **Permissible Pulse Load** _P_ totmax/ _P_ totDC = ƒ( _t_ p) BC846PN, BC847PN **==> picture [489 x 273] intentionally omitted <==** **----- Start of picture text -----**<br> 10 3 10 3<br>K/W<br>-<br>10 2<br>D = 0<br>10 2 0.005<br>0.01<br>0.02<br>10 1 0.05<br>0.1<br>0.5<br>0.2<br>0.2<br>0.5<br>0.1<br>0.05 10 1<br>10 0 0.02<br>0.01<br>0.005<br>D = 0<br>10 -1 10 0<br>10 [-6 ] 10 [-5 ] 10 [-4 ] 10 [-3 ] 10 [-2 ] s 10 [0 ] 10 [-6 ] 10 [-5 ] 10 [-4 ] 10 [-3 ] 10 [-2 ] s 10 [0 ]<br>t t<br>p p<br>totDC<br>/ P<br>thJS totmax<br>R P<br>**----- End of picture text -----**<br> **Permissible Puls Load** _R_ thJS = ƒ ( _t_ p) BC846UPN **==> picture [234 x 272] intentionally omitted <==** **----- Start of picture text -----**<br> 10 3<br>K/W<br>10 2<br>10 1 D=0.5<br>0.2<br>0.1<br>0.05<br>0.02<br>0.01<br>10 0<br>0.005<br>0<br>10 -1<br>10 [-6 ] 10 [-5 ] 10 [-4 ] 10 [-3 ] 10 [-2 ] s 10 [0 ]<br>t<br>p<br>thJS<br>R<br>**----- End of picture text -----**<br> ## **Permissible Pulse Load** _P_ totmax/ _P_ totDC = ƒ( _t_ p) BC846UPN **==> picture [234 x 272] intentionally omitted <==** **----- Start of picture text -----**<br> 10 3<br>D=0<br>0.005<br>0.01<br>10 2 0.02<br>0.05<br>0.1<br>0.2<br>0.5<br>10 1<br>10 0<br>10 [-6 ] 10 [-5 ] 10 [-4 ] 10 [-3 ] 10 [-2 ] s 10 [0 ]<br>t<br>p<br>totDC<br>P<br>/<br>totmax<br>P<br>**----- End of picture text -----**<br> 2011-10-05 7 **Package SC74** **BC846PN/UPN_BC847PN** **==> picture [391 x 310] intentionally omitted <==** **----- Start of picture text -----**<br> Package Outline<br>2.9 ±0.2<br>B 1.1 MAX.<br>(2.25)<br>(0.35) 0.15 -0.06+0.1<br>6 5 4<br>1 2 3<br>0.35 +0.1-0.05 A<br>Pin 1 0.2 M B 6x 0.1 MAX.<br>marking 0.95<br>0.2 [M] A<br>1.9<br>Foot Print<br>0.5<br>0.95<br>±0.1 ±0.1 ±0.1<br>2.5 0.25 1.6<br>10˚ MAX. 10˚ MAX.<br>9 9<br>1. 2.<br>**----- End of picture text -----**<br> ## Marking Layout (Example) Small variations in positioning of Date code, Type code and Manufacture are possible. **==> picture [236 x 97] intentionally omitted <==** **----- Start of picture text -----**<br> Manufacturer<br>2005, June<br>Date code (Year/Month)<br>Pin 1 marking BCW66H<br>Laser marking Type code<br>**----- End of picture text -----**<br> ## Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel For symmetric types no defined Pin 1 orientation in reel. **==> picture [170 x 92] intentionally omitted <==** **----- Start of picture text -----**<br> 4 0.2<br>Pin 1 3.15 1.15<br>marking<br>8<br>2.7<br>**----- End of picture text -----**<br> 2011-10-05 8 **Package SOT363** **BC846PN/UPN_BC847PN** ## Package Outline ## Foot Print **==> picture [216 x 306] intentionally omitted <==** **----- Start of picture text -----**<br> 2 ±0.2 0.9 [±0.1]<br>0.2 +0.1-0.05 6x 0.1 MAX.<br>0.1 M<br>0.1<br>A<br>6 5 4<br>1 2 3<br>Pin 1<br>marking 0.65 0.65 0.15 +0.1-0.05<br>0.2 M A<br>0.3<br>0.65<br>0.65<br>±0.1 ±0.1<br>2.1 0.1 MIN. 1.25<br>0.7<br>0.9 1.6<br>**----- End of picture text -----**<br> ## Marking Layout (Example) Small variations in positioning of Date code, Type code and Manufacture are possible. Manufacturer 2005, June Date code (Year/Month) Pin 1 marking BCR108S Laser marking Type code ## Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel For symmetric types no defined Pin 1 orientation in reel. **==> picture [161 x 90] intentionally omitted <==** **----- Start of picture text -----**<br> 4 0.2<br>Pin 1 2.15 1.1<br>marking<br>8<br>2.3<br>**----- End of picture text -----**<br> 2011-10-05 9 **BC846PN/UPN_BC847PN** ## **Edition 2009-11-16** **Published by Infineon Technologies AG 81726 Munich, Germany** ## **2009 Infineon Technologies AG All Rights Reserved.** ## **Legal Disclaimer** The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. ## **Information** For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com>). ## **Warnings** Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 2011-10-05 10
Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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