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BC846BWT1G
Bipolar (BJT) Single Transistor, General Purpose, NPN, 65 V, 100 mA, 150 mW, SOT-323, Surface Mount
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: ONSEMI
- Product type: Single Bipolar Junction Transistors - BJT
- Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:65V; Transition Frequency ft:100MHz; Power Dissipation Pd:150mW; DC Collector Current:100mA; DC Current Gain hFE:100hFE; Transistor Case Sty
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: BCxxx
- Qualification: AEC-Q101
- Power Dissipation: 150mW
- Transistor Mounting: Surface Mount
- Transistor Polarity: NPN
- Transition Frequency: 100MHz
- Transistor Case Style: SOT-323
- DC Current Gain hFE Min: 100hFE
- Operating Temperature Max: 150°C
- Continuous Collector Current: 100mA
- Collector Emitter Voltage Max: 65V
| Delivery and price | |
|---|---|
| Units per pack | 1500 |
| Price | 0.028 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
Final Product/Process Change Notification Document #:FPCN22871X Issue Date:05 Dec 2019 |**Title of Change:**|Pd-coated Cu wire qualification on SC70 transistor and Bias Resistor Transistor at ON| |---|---| ||Semiconductor, Leshan, China facility.| |**Proposed First Ship date:**|12 Mar 2020 or earlier if approved by customer| |**Contact Information:**|Contact your local ON Semiconductor Sales Office or Andy.Tao@onsemi.com| |**PCN Samples Contact:**|Contact your local ON Semiconductor Sales Office or <PCN.samples@onsemi.com>.| ||Sample requests are to be submitted no later than 30 days from the date of first notification,| ||Initial PCN or Final PCN, for this change.| ||Samples delivery timing will be subject to request date, sample quantity and special customer| ||packing/label requirements.| |**Additional Reliability Data:**|Contact your local ON Semiconductor Sales Office or ffvf9f@onsemi.com| |**Type of Notification:**|This is a Final Product/Process Change Notification (FPCN) sent to customers. FPCNs are issued 90| ||days prior to implementation of the change.| ||ON Semiconductor will consider this change accepted, unless an inquiry is made in writing within| ||30 days of delivery of this notice. To do so, contact PCN.Support@onsemi.com| |**Marking of Parts/ Traceability of**|At the expiration of this FPCN devices will be assembled with Pd-coated Cu Wire at ON| |**Change:**|Semiconductor’s existing Leshan facility. Products assembled with Pd-coated Cu Wire from the ON| ||Semiconductor facility will have a Finish Goods Date Code of WW11, 2020 or greater| |**Change Category:**|Assembly Change| |**Change Sub-Category(s):**|Material Change| |**Sites Affected:**|| |**ON Semiconductor Sites**|**External Foundry/Subcon Sites**| |Leshan Phoenix Semiconductor, China|None| ## **Description and Purpose:** ON Semiconductor is notifying customers of its use of Pd-coated Cu wire for their impacted devices at ON Semiconductor’s Leshan, China facility. Discrete products built with bipolar transistor are represented by this Process Change Notice. At the expiration of this PCN, these devices will be built with Pd-coated Cu wire at the same site. Datasheet specifications and product electrical performance remain unchanged. Reliability Qualification and full electrical characterization over temperature has been performed. ||**Before Change Description**|**After Change Description**| |---|---|---| |**Bond Wire**|0.8mil bare Cu wire|0.8mil Pd-coated Cu wire| TEM001793 Rev. C Page 1 of 4 ## Final Product/Process Change Notification Document #:FPCN22871X Issue Date:05 Dec 2019 ## **Reliability Data Summary:** |**QV DEVICE NAME: SMUN5211DW1T1G**||||||| |---|---|---|---|---|---|---| |**RMS: 40517**||||||| |**PACKAGE: SC88**||||||| |**Test**<br>**Specification**<br>**Condition**<br>**Interval**<br>**Results**<br>HTRB<br>JESD22-A108<br>Ta=150°C,100% max rated V<br>2016hrs<br>0/231<br>HTSL<br>JESD22-A103<br>Ta= 150°C<br>2016 hrs<br>0/231<br>IOL<br>MIL-STD-750<br>(M1037)<br>AEC-Q101<br>Ta=+25°C, delta Tj=100°C<br>On/off = 2 min<br>30K cyc<br>0/231<br>TC<br>JESD22-A104<br>Ta= -65°C to +150°C<br>2000 cyc<br>0/231<br>HAST<br>JESD22-A110<br>130°C,85% RH,18.8psig,bias<br>192hrs<br>0/231<br>uHAST<br>JESD22-A118<br>130°C,85% RH,18.8psig,unbiased<br>96 hrs<br>0/231<br>PC<br>J-STD-020 JESD-A113<br>MSL 1@260 °C<br>-<br>0/924<br>RSH<br>JESD22- B106<br>Ta = 265C,10 sec<br>-<br>0/30<br>~~———s~~||||||| |**QV DEVICE NAME: SBC846BDW1T1G**||||||| |**RMS: 40518**||||||| |**PACKAGE: SC88**||||||| |**Test**<br>**Specification**<br>**Condition**<br>**Interval**<br>**Results**<br>HTRB<br>JESD22-A108<br>Ta=150°C,100% max rated V<br>2016hrs<br>0/231<br>HTSL<br>JESD22-A103<br>Ta= 150°C<br>2016 hrs<br>0/231<br>IOL<br>MIL-STD-750<br>(M1037)<br>AEC-Q101<br>Ta=+25°C, delta Tj=100°C<br>On/off = 2 min<br>30K cyc<br>0/231<br>TC<br>JESD22-A104<br>Ta= -65°C to +150°C<br>2000 cyc<br>0/231<br>HAST<br>JESD22-A110<br>130°C,85% RH,18.8psig,bias<br>192hrs<br>0/231<br>uHAST<br>JESD22-A118<br>130°C,85% RH,18.8psig,unbiased<br>96 hrs<br>0/231<br>PC<br>J-STD-020 JESD-A113<br>MSL 1@260 °C<br>-<br>0/924<br>RSH<br>JESD22- B106<br>Ta = 265C,10 sec<br>-<br>0/30<br>~~=———s~~||||||| |**QV DEVICE NAME: BC856BDW1T1G**||||||| |**RMS: 40519**||||||| |**PACKAGE: SC88**||||||| |**Test**<br>**Specification**<br>**Condition**<br>**Interval**<br>**Results**<br>HTRB<br>JESD22-A108<br>Ta=150°C,100% max rated V<br>2016hrs<br>0/231<br>HTSL<br>JESD22-A103<br>Ta= 150°C<br>2016 hrs<br>0/231<br>IOL<br>MIL-STD-750<br>(M1037)<br>AEC-Q101<br>Ta=+25°C, delta Tj=100°C<br>On/off = 2 min<br>30K cyc<br>0/231<br>TC<br>JESD22-A104<br>Ta= -65°C to +150°C<br>2000 cyc<br>0/231<br>HAST<br>JESD22-A110<br>130°C,85% RH,18.8psig,bias<br>192hrs<br>0/231<br>uHAST<br>JESD22-A118<br>130°C,85% RH,18.8psig,unbiased<br>96 hrs<br>0/231<br>PC<br>J-STD-020 JESD-A113<br>MSL 1@260 °C<br>-<br>0/924<br>RSH<br>JESD22- B106<br>Ta = 265C,10 sec<br>-<br>0/30<br>~~=~~||||||| |TEM001793 Rev. C|||||Page 2 of 4|| Final Product/Process Change Notification Document #:FPCN22871X Issue Date:05 Dec 2019 ## **Electrical Characteristics Summary:** Three temperature characterization and ESD performance meet datasheet specification. Electrical characterization result is available upon request. ## **List of Affected Parts:** _**Note:** Only the standard (off the shelf) part numbers are listed in the parts list. Any custom parts affected by this PCN are shown in the customer specific PCN addendum in the PCN email notification, or on the_ _**PCN Customized Portal.**_ |**Part Number**|**Qualification Vehicle**| |---|---| |MUN5116T1G|SMUN5211DW1T1G| |MUN5130T1G|SMUN5211DW1T1G| |MUN5213T1G|SMUN5211DW1T1G| |MUN5214T1G|SMUN5211DW1T1G| |MUN5215T1G|SMUN5211DW1T1G| |MUN5216T1G|SMUN5211DW1T1G| |MUN5230T1G|SMUN5211DW1T1G| |MUN5231T1G|SMUN5211DW1T1G| |MUN5232T1G|SMUN5211DW1T1G| |MUN5233T1G|SMUN5211DW1T1G| |MUN5234T1G|SMUN5211DW1T1G| |MUN5235T1G|SMUN5211DW1T1G| |MUN5236T1G|SMUN5211DW1T1G| |MUN5238T1G|SMUN5211DW1T1G| |MUN5240T1G|SMUN5211DW1T1G| |MUN5241T1G|SMUN5211DW1T1G| |MUN5141T1G|SMUN5211DW1T1G| |MUN5140T1G|SMUN5211DW1T1G| |MUN5138T1G|SMUN5211DW1T1G| |MUN5137T1G|SMUN5211DW1T1G| |MMBT4401WT1G|SBC846BDW1T1G| |MMBT3906WT1G|BC856BDW1T1G| |MMBT3904WT1G|SBC846BDW1T1G| |MMBT2222AWT3G|SMUN5211DW1T1G| |MMBT2222AWT1G|SMUN5211DW1T1G| |BC858BWT1G|BC856BDW1T1G| |BC858AWT1G|BC856BDW1T1G| TEM001793 Rev. C Page 3 of 4 Final Product/Process Change Notification Document #:FPCN22871X Issue Date:05 Dec 2019 |BC857CWT1G|BC856BDW1T1G| |---|---| |BC857BWT1G|BC856BDW1T1G| |BC856BWT1G|BC856BDW1T1G| |BC848CWT1G|SBC846BDW1T1G| |BC848BWT1G|SBC846BDW1T1G| |BC847CWT3G|SBC846BDW1T1G| |BC847CWT1G|SBC846BDW1T1G| |BC847BWT1G|SBC846BDW1T1G| |BC847AWT1G|SBC846BDW1T1G| |BC846BWT1G|SBC846BDW1T1G| |MUN5212T1G|SMUN5211DW1T1G| |MUN5211T1G|SMUN5211DW1T1G| |MUN5136T1G|SMUN5211DW1T1G| |MUN5135T1G|SMUN5211DW1T1G| |MUN5134T1G|SMUN5211DW1T1G| |MUN5133T1G|SMUN5211DW1T1G| |MUN5132T1G|SMUN5211DW1T1G| |MUN5131T1G|SMUN5211DW1T1G| |MUN5115T1G|SMUN5211DW1T1G| |MUN5114T1G|SMUN5211DW1T1G| |MUN5113T3G|SMUN5211DW1T1G| |MUN5113T1G|SMUN5211DW1T1G| |MUN5112T1G|SMUN5211DW1T1G| |MUN5111T1G|SMUN5211DW1T1G| |MSD1819A-RT1G|SBC846BDW1T1G| |MSB1218A-RT1G|BC856BDW1T1G| TEM001793 Rev. C Page 4 of 4 **Note** _: The Japanese version is for reference only. In case of any differences between the English and Japanese version, the English version shall control._ `注：日本語版は参照用です。英語版と日本語版の違いがある場合は、英語版が優先さ れます .` 最終製品 **/** プロセス変更通知 文書番号# ： FPCN22871X 発行日：05 Dec 2019 |変更件名：|オン・セミコンダクターの楽山（中国）工場におけるSC70トランジスタおよびバイアス抵抗トランジスタへのパラジウム<br>コートCuワイヤの認定|オン・セミコンダクターの楽山（中国）工場におけるSC70トランジスタおよびバイアス抵抗トランジスタへのパラジウム<br>コートCuワイヤの認定| |---|---|---| |初回出荷予定日：|12 Mar 2020 (またはお客様からの承認が得られた場合はそれ以前)|| |連絡先情報：|現地のオン・セミコンダクター営業所または <Andy.Tao@onsemi.com> にお問い合わせください。|| |サンプル：|現地のオン・セミコンダクター営業所または<PCN.Samples@onsemi.com>にお問い合わせください。<br>サンプルは、この変更の初回通知、初回PCNの日付から30日以内に要求してください。<br>サンプル納入時は、依頼日、数量、特別梱包材/ラベル条件によって異なります。|| |追加の信頼性データ：|お客さまの地域のオン・セミコンダクター営業所または<ffvf9f@onsemi.com>にお問い合わせください。|| |通知種別：|これは、お客様宛の最終製品/プロセス変更通知（FPCN）です。FPCNは、変更実施の90日前に発行されま<br>す。<br>オン・セミコンダクターは、この通知の送付から30日以内に書面による問い合わせがない限り、この変更が承諾さ<br>れたものとみなします。 お問い合わせは、<PCN.Support@onsemi.com>宛てにお願いします。|| |変更部品の識別：|本FPCNの期限切れに伴い、製品の組み立てはオン・セミコンダクターの楽山工場ではPdコートCuワイヤで行わ<br>れるようになります。オン・セミコンダクター楽山工場でPdコートCuワイヤを用いて組み立てられた製品には、2020<br>年WW11以降の完成品日付コード が付けられます。|| |変更カテゴリ： アセンブリの変更||| |変更サブカテゴリ： 材料の変更||| |影響を受ける拠点：||| |オン・セミコンダクター拠点：||外部製造工場**/**下請業者拠点：| |楽山フェニックス・セミコンダクター、中国||なし| |説明および目的：<br>オン・セミコンダクターは、オン・セミコンダクターの楽山（中国）工場で対象となる製品にPdコートCuワイヤを使用することをお知らせします。バイポーラト<br>ランジスタで製造されるディスクリート製品は、本工程変更通知で表されます。本PCNの期限切れに伴い、これらの製品は同工場ではPdコートCuワ<br>イヤで製造されるようになります。データシート規格および製品の電気的特性に変更はありません。信頼性認定試験と電気的温度特性評価は実施さ<br>れています。<br>変更前の表記<br>変更後の表記<br>ボンドワイヤ<br>0.8mil bare Cu wire<br>0.8mil Pd-coated Cu wire||| ## 説明および目的： オン・セミコンダクターは、オン・セミコンダクターの楽山（中国）工場で対象となる製品に Pd コート Cu ワイヤを使用することをお知らせします。バイポーラト ランジスタで製造されるディスクリート製品は、本工程変更通知で表されます。本 PCN の期限切れに伴い、これらの製品は同工場では Pd コート Cu ワ イヤで製造されるようになります。データシート規格および製品の電気的特性に変更はありません。信頼性認定試験と電気的温度特性評価は実施さ れています。 ||変更前の表記|変更後の表記| |---|---|---| |ボンドワイヤ|0.8mil bare Cu wire|0.8mil Pd-coated Cu wire| 1/4 ページ TEM001793 Rev. C 最終製品 **/** プロセス変更通知 文書番号# ： FPCN22871X 発行日：05 Dec 2019 ## 信頼性データの要約 **:** デバイス名 **: : SMUN5211DW1T1G RMS: 40517** パッケージ： **SC88** |テスト<br>~~———~~|仕様<br>~~———~~|条件<br>~~———~~|間隔<br>~~———~~|結果<br>~~———~~| |---|---|---|---|---| |HTRB<br>~~———~~|JESD22-A108<br>~~———~~|Ta=150°C,100% max rated V<br>~~———~~|2016hrs<br>~~———~~|0/231<br>~~———~~| |HTSL<br>~~———~~|JESD22-A103<br>~~———~~|Ta= 150°C<br>~~———~~|2016 hrs<br>~~———~~|0/231<br>~~———~~| |IOL<br>~~———~~|MIL-STD-750<br>(M1037)<br>AEC-Q101<br>~~———~~|Ta=+25°C, delta Tj=100°C<br>On/off = 2 min<br>~~———~~|30K cyc<br>~~———~~|0/231<br>~~———~~| |TC<br>~~———~~|JESD22-A104<br>~~———~~|Ta= -65°C to +150°C<br>~~———~~|2000 cyc<br>~~———~~|0/231<br>~~———~~| |HAST<br>~~———~~|JESD22-A110<br>~~———~~|130°C,85% RH,18.8psig,bias<br>~~———~~|192hrs<br>~~———~~|0/231<br>~~———~~| |uHAST<br>~~———~~|JESD22-A118<br>~~———~~|130°C,85% RH,18.8psig,unbiased<br>~~———~~|96 hrs<br>~~———~~|0/231<br>~~———~~| |PC<br>~~———~~|J-STD-020 JESD-A113<br>~~———~~|MSL 1@260 °C<br>~~———~~|-<br>~~———~~|0/924<br>~~———~~| |RSH<br>~~———~~|JESD22- B106<br>~~———~~|Ta = 265C,10 sec<br>~~———~~|-<br>~~———~~|0/30<br>~~———~~| |テスト<br>~~=———=~~|仕様<br>~~=———=~~|条件<br>~~=———=~~|間隔<br>~~=———=~~|結果<br>~~=———=~~| |---|---|---|---|---| |HTRB<br>~~=———=~~|JESD22-A108<br>~~=———=~~|Ta=150°C,100% max rated V<br>~~=———=~~|2016hrs<br>~~=———=~~|0/231<br>~~=———=~~| |HTSL<br>~~=———=~~|JESD22-A103<br>~~=———=~~|Ta= 150°C<br>~~=———=~~|2016 hrs<br>~~=———=~~|0/231<br>~~=———=~~| |IOL<br>~~=———=~~|MIL-STD-750<br>(M1037)<br>AEC-Q101<br>~~=———=~~|Ta=+25°C, delta Tj=100°C<br>On/off = 2 min<br>~~=———=~~|30K cyc<br>~~=———=~~|0/231<br>~~=———=~~| |TC<br>~~=———=~~|JESD22-A104<br>~~=———=~~|Ta= -65°C to +150°C<br>~~=———=~~|2000 cyc<br>~~=———=~~|0/231<br>~~=———=~~| |HAST<br>~~=———=~~|JESD22-A110<br>~~=———=~~|130°C,85% RH,18.8psig,bias<br>~~=———=~~|192hrs<br>~~=———=~~|0/231<br>~~=———=~~| |uHAST<br>~~=———=~~|JESD22-A118<br>~~=———=~~|130°C,85% RH,18.8psig,unbiased<br>~~=———=~~|96 hrs<br>~~=———=~~|0/231<br>~~=———=~~| |PC<br>~~=———=~~|J-STD-020 JESD-A113<br>~~=———=~~|MSL 1@260 °C<br>~~=———=~~|-<br>~~=———=~~|0/924<br>~~=———=~~| |RSH<br>~~=———=~~|JESD22- B106<br>~~=———=~~|Ta = 265C,10 sec<br>~~=———=~~|-<br>~~=———=~~|0/30<br>~~=———=~~| |テスト<br>~~==———=~~|仕様<br>~~==———=~~|条件<br>~~==———=~~|間隔<br>~~==———=~~|結果<br>~~==———=~~| |---|---|---|---|---| |HTRB<br>~~==———=~~|JESD22-A108<br>~~==———=~~|Ta=150°C,100% max rated V<br>~~==———=~~|2016hrs<br>~~==———=~~|0/231<br>~~==———=~~| |HTSL<br>~~==———=~~|JESD22-A103<br>~~==———=~~|Ta= 150°C<br>~~==———=~~|2016 hrs<br>~~==———=~~|0/231<br>~~==———=~~| |IOL<br>~~==———=~~|MIL-STD-750<br>(M1037)<br>AEC-Q101<br>~~==———=~~|Ta=+25°C, delta Tj=100°C<br>On/off = 2 min<br>~~==———=~~|30K cyc<br>~~==———=~~|0/231<br>~~==———=~~| |TC<br>~~==———=~~|JESD22-A104<br>~~==———=~~|Ta= -65°C to +150°C<br>~~==———=~~|2000 cyc<br>~~==———=~~|0/231<br>~~==———=~~| |HAST<br>~~==———=~~|JESD22-A110<br>~~==———=~~|130°C,85% RH,18.8psig,bias<br>~~==———=~~|192hrs<br>~~==———=~~|0/231<br>~~==———=~~| |uHAST<br>~~==———=~~|JESD22-A118<br>~~==———=~~|130°C,85% RH,18.8psig,unbiased<br>~~==———=~~|96 hrs<br>~~==———=~~|0/231<br>~~==———=~~| |PC<br>~~==———=~~|J-STD-020 JESD-A113<br>~~==———=~~|MSL 1@260 °C<br>~~==———=~~|-<br>~~==———=~~|0/924<br>~~==———=~~| |RSH<br>~~==———=~~|JESD22- B106<br>~~==———=~~|Ta = 265C,10 sec<br>~~==———=~~|-<br>~~==———=~~|0/30<br>~~==———=~~| 最終製品 **/** プロセス変更通知 文書番号# ： FPCN22871X 発行日：05 Dec 2019 ## 電気的特性の要約： ## 3 温度特性評価と ESD 性能はデータシートの規格に適合します。 電気的特性結果は、ご要求に応じてご提供可能です。 ## 影響を受ける部品の一覧： 注: 部品一覧には標準部品番号 (既製品) のみが記載されています。本 PCN の影響を受けるカスタム部品番号は、PCN メールで提供される顧客個別の付録、または PCN カスタマイズポータルに記載されています。 |部品番号|認定試験用ビークル| |---|---| |MUN5241T1G|SMUN5211DW1T1G| |MUN5240T1G|SMUN5211DW1T1G| |MUN5238T1G|SMUN5211DW1T1G| |MUN5236T1G|SMUN5211DW1T1G| |MUN5235T1G|SMUN5211DW1T1G| |MUN5234T1G|SMUN5211DW1T1G| |MUN5233T1G|SMUN5211DW1T1G| |MUN5232T1G|SMUN5211DW1T1G| |MUN5231T1G|SMUN5211DW1T1G| |MUN5230T1G|SMUN5211DW1T1G| |MUN5216T1G|SMUN5211DW1T1G| |MUN5215T1G|SMUN5211DW1T1G| |MUN5214T1G|SMUN5211DW1T1G| |MUN5213T1G|SMUN5211DW1T1G| |MUN5212T1G|SMUN5211DW1T1G| |MUN5211T1G|SMUN5211DW1T1G| |MUN5141T1G|SMUN5211DW1T1G| |MUN5140T1G|SMUN5211DW1T1G| |MUN5138T1G|SMUN5211DW1T1G| |MUN5137T1G|SMUN5211DW1T1G| |MUN5136T1G|SMUN5211DW1T1G| |MUN5135T1G|SMUN5211DW1T1G| |MUN5134T1G|SMUN5211DW1T1G| |MUN5133T1G|SMUN5211DW1T1G| |MUN5132T1G|SMUN5211DW1T1G| |MUN5131T1G|SMUN5211DW1T1G| |MUN5130T1G|SMUN5211DW1T1G| 3/4 ページ TEM001793 Rev. C ## 最終製品 **/** プロセス変更通知 文書番号# ： FPCN22871X 発行日：05 Dec 2019 |MUN5116T1G|SMUN5211DW1T1G| |---|---| |MUN5115T1G|SMUN5211DW1T1G| |MUN5114T1G|SMUN5211DW1T1G| |MUN5113T3G|SMUN5211DW1T1G| |MUN5113T1G|SMUN5211DW1T1G| |MUN5112T1G|SMUN5211DW1T1G| |MUN5111T1G|SMUN5211DW1T1G| |MSD1819A-RT1G|SBC846BDW1T1G| |MSB1218A-RT1G|BC856BDW1T1G| |MMBT4401WT1G|SBC846BDW1T1G| |MMBT3906WT1G|BC856BDW1T1G| |MMBT3904WT1G|SBC846BDW1T1G| |MMBT2222AWT3G|SMUN5211DW1T1G| |MMBT2222AWT1G|SMUN5211DW1T1G| |BC858BWT1G|BC856BDW1T1G| |BC858AWT1G|BC856BDW1T1G| |BC857CWT1G|BC856BDW1T1G| |BC857BWT1G|BC856BDW1T1G| |BC856BWT1G|BC856BDW1T1G| |BC848CWT1G|SBC846BDW1T1G| |BC848BWT1G|SBC846BDW1T1G| |BC847CWT3G|SBC846BDW1T1G| |BC847CWT1G|SBC846BDW1T1G| |BC847BWT1G|SBC846BDW1T1G| |BC847AWT1G|SBC846BDW1T1G| |BC846BWT1G|SBC846BDW1T1G| 4/4 ページ TEM001793 Rev. C
Updated at March 24, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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