Illustrative purposes only
BC846BPDW1T1G
Bipolar Transistor Array, Complementary NPN and PNP, 65 V, 100 mA, 380 mW, 200 hFE, SOT-363
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: ONSEMI
- Product type: Bipolar Junction Transistor Arrays - BJT
- Product variants: No other variants available. No other names.
- No. of Pins: 6Pins
- DC Current Gain hFE: 200hFE
- Transistor Mounting: Surface Mount
- Transistor Polarity: Complementary NPN and PNP
- DC Collector Current: 100mA
- Power Dissipation Pd: 380mW
- Power Dissipation NPN: 380mW
- Power Dissipation PNP: 380mW
- Transistor Case Style: SOT-363
- Transition Frequency NPN: 100MHz
- Transition Frequency PNP: 100MHz
- Operating Temperature Max: 150°C
- DC Current Gain hFE Min NPN: 200hFE
- DC Current Gain hFE Min PNP: 200hFE
- Continuous Collector Current NPN: 100mA
- Continuous Collector Current PNP: 100mA
- Collector Emitter Voltage Max NPN: 65V
- Collector Emitter Voltage Max PNP: 65V
- Collector Emitter Voltage V(br)ceo: 65V
| Delivery and price | |
|---|---|
| Units per pack | 3000 |
| Price | 0.051 € |
| Current stock | N/A |
| Lead time | 30 days |
Datasheet
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