BC846BM3T5G

## BC846BM3T5G, NSVBC846BM3T5G 

## General Purpose Transistor 

## **NPN Silicon** 

- Moisture Sensitivity Level: 1 

## **http://onsemi.com** 

- ESD Rating: Human Body Model: >4000 V Machine Model: >400 V 

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COLLECTOR<br>3<br>1<br>BASE<br>& ) 2<br>EMITTER<br>MARKING<br>DIAGRAM<br>3<br>SOT−723<br>CASE 631AA 1B M<br>2 STYLE 1<br>1 ¢<br>1B = Specific Device Code<br>M = Date Code<br>ORDERING INFORMATION<br>Device Package Shipping [†]<br>BC846BM3T5G SOT−723 8000 / Tape &<br>(Pb−Free) Reel<br>NSVBC846BM3T5G SOT−723 8000 / Tape &<br>(Pb−Free) Reel<br>†For information on tape and reel specifications,<br>including part orientation and tape sizes, please EG =<br>refer to our Tape and Reel Packaging Specifications<br>Brochure, BRD8011/D.<br>**----- End of picture text -----**<br>


- NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

- This is a Pb−Free Device 

**MAXIMUM RATINGS Rating Symbol Value Unit** Collector−Emitter Voltage VCEO 65 Vdc 3 Collector−Base Voltage VCBO 80 Vdc Emitter−Base Voltage VEBO 6.0 Vdc ~~———-~~ Collector Current − Continuous IC 100 mAdc e 1 **THERMAL CHARACTERISTICS Characteristic Symbol Max Unit** Total Device Dissipation FR−5 Board PD 265 mW (Note 1) TA = 25 ° C Derate above 25 ° C 2.1 mW/ ° C ~~Tt~~ Thermal Resistance, R JA 470 ° C/W **Device** Junction to Ambient (Note 1) BC846BM3T5G Total Device Dissipation PD 640 mW Alumina Substrate (Note 2) TA = 25 ° C Derate above 25 ° C 5.1 mW/ ° C ~~Tr~~ Thermal Resistance, R JA 195 ° C/W Junction to Ambient (Note 2) Junction and Storage TJ, Tstg −55 to ° C Temperature Range +150 ~~>~~ Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

1. FR−5 = 1.0 0.75 0.062 in. 

2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 

Publication Order Number: **BC846BM3/D** 

**1** 

© Semiconductor Components Industries, LLC, 2014 **January, 2014 − Rev. 3** 

## **BC846BM3T5G, NSVBC846BM3T5G** 

## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted)||||||
|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**||||||
|Collector−Emitter Breakdown Voltage<br>(IC= 10 mA)|V(BR)CEO|65|−|−|V|
|Collector−Emitter Breakdown Voltage<br>(IC= 10�A, VEB= 0)|V(BR)CES|80|−|−|V|
|Collector−Base Breakdown Voltage<br>(IC= 10�A)|V(BR)CBO|80|−|−|V|
|Emitter−Base Breakdown Voltage<br>(IE= 1.0�A)|V(BR)EBO|6.0|−|−|V|
|Collector Cutoff Current<br>(VCB= 30 V)<br>(VCB= 30 V, TA= 150°C)|ICBO|−<br>−|−<br>−|15<br>5.0|nA<br>�A|
|**ON CHARACTERISTICS**||||||
|DC Current Gain<br>(IC= 10�A, VCE= 5.0 V)<br>(IC= 2.0 mA, VCE= 5.0 V)|hFE|−<br>200|150<br>290|−<br>450|−|
|Collector−Emitter Saturation Voltage (IC= 10 mA, IB= 0.5 mA)<br>Collector−Emitter Saturation Voltage(IC= 100 mA, IB= 5.0 mA)|VCE(sat)|−<br>−|−<br>−|0.25<br>0.6|V|
|Base−Emitter Saturation Voltage (IC= 10 mA, IB= 0.5 mA)<br>Base−Emitter Saturation Voltage(IC= 100 mA, IB= 5.0 mA)|VBE(sat)|−<br>−|0.7<br>0.9|−<br>−|V|
|Base−Emitter Voltage (IC= 1.0 mA, VCE= 5.0 V)<br>Base−Emitter Voltage(IC= 2.0 mA, VCE= 5.0 V)<br>Base−Emitter Voltage(IC= 10 mA, VCE= 5.0 V)|VBE(on)|550<br>580<br>−|645<br>660<br>−|700<br>700<br>770|mV|
|**SMALL−SIGNAL CHARACTERISTICS**||||||
|Current−Gain − Bandwidth Product<br>(IC= 10 mA, VCE= 5.0 Vdc, f = 100 MHz)|fT|100|−|−|MHz|
|Output Capacitance<br>(VCB= 10 V, f = 1.0 MHz)|Cobo|−|−|4.5|pF|
|Noise Figure<br>(IC= 0.2 mA, VCE= 5.0 Vdc, RS= 2.0 k�, f = 1.0 kHz, BW = 200 Hz)|NF|−|−|10|dB|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

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**2** 

**BC846BM3T5G, NSVBC846BM3T5G** 

## **TYPICAL CHARACTERISTICS** 

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1,000 0.4<br>150 ° C V CE = 5 V<br>25 ° C IC/IB = 20<br>−55 ° C 0.3<br>150 ° C<br>100 0.2<br>25 ° C<br>0.1<br>−55 ° C<br>10 0<br>0.1 1 10 100 1,000 0.1 1 10 100<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Figure 1. DC Current Gain Figure 2. Collector−Emitter Saturation Voltage<br>1.2 1.2<br>1.0 1.0<br>−55 ° C −55 ° C<br>0.8 0.8<br>25 ° C 25 ° C<br>0.6 0.6<br>150 ° C 150 ° C<br>0.4 0.4<br>0.2 IC/IB = 20 0.2 VCE = 5 V<br>0 0<br>0.1 1 10 100 1,000 0.1 1 10 100 1,000<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>, DC CURRENT VOLTAGE (V)<br>FE<br>h , COLL−EMIT SATURATION<br>CE(sat)<br>V<br>VOLTAGE (V)<br>, BASE−EMIT SATURATION<br>, BASE−EMITTER ON VOLTAGE (V)<br>BE(sat)<br>V<br>BE(on)<br>V<br>**----- End of picture text -----**<br>


**Figure 3. Base−Emitter Saturation Voltage** 

**Figure 4. Base−Emitter “On” Voltage** 

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−0.2<br>−0.6 VCE = 5 V<br>−1.0<br>−1.4<br>−1.8 � VB , for V BE<br>−2.2<br>−2.6<br>−55 ° C to 150 ° C<br>−3.0<br>0.1 1 10 100 1,000<br>IC, COLLECTOR CURRENT (mA)<br>, TEMPERATURE COEFFICIENT (mV)<br>VB<br>�<br>**----- End of picture text -----**<br>


**Figure 5. Base−Emitter Temperature Coefficient** 

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2.0<br>T A = 25 ° C<br>1.6 10 mA 20 mA 50 mA 100 mA IC = 200 mA<br>1.2<br>0.8<br>0.4<br>0<br>0.01 0.1 1 10 100<br>IB, BASE CURRENT (mA)<br>, COLLECTOR−EMITTER VOLTAGE (V)<br>CE<br>V<br>**----- End of picture text -----**<br>


**Figure 6. Collector Saturation Region** 

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**3** 

**BC846BM3T5G, NSVBC846BM3T5G** 

## **TYPICAL CHARACTERISTICS** 

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10 1,000<br>VCE = 5 V<br>Cib<br>Cob<br>1 100<br>0.1 10<br>0.1 1 10 100 1 10 100<br>VR, REVERSE VOLTAGE (V) IC, COLLECTOR CURRENT (mA)<br>PRODUCT (MHz)<br>C, CAPACITANCE (pF)<br>, CURRENT−GAIN−BANDWIDTH<br>fT<br>**----- End of picture text -----**<br>


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Figure 7. Capacitances<br>**----- End of picture text -----**<br>


**Figure 8. Current−Gain−Bandwidth Product** 

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**4** 

**BC846BM3T5G, NSVBC846BM3T5G** 

## **PACKAGE DIMENSIONS** 

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SOT−723<br>CASE 631AA<br>ISSUE D<br>−X− NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ASME<br>D Y14.5M, 1994.<br>b1 A 2. CONTROLLING DIMENSION: MILLIMETERS.<br>3 −Y− 3. MAXIMUM LEAD THICKNESS INCLUDES LEADFINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM<br>THICKNESS OF BASE MATERIAL.<br>E H E 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD<br>FLASH, PROTRUSIONS OR GATE BURRS.<br>1 2<br>a 2X b wp MILLIMETERS<br>C DIM MIN NOM MAX<br>2X e 0.08 X Y A 0.45 0.50 0.55<br>SIDE VIEW b 0.15 0.21 0.27<br>TOP VIEW b1 0.25 0.31 0.37<br>C 0.07 0.12 0.17<br>3X L D 1.15 1.20 1.25<br>1 E 0.75 0.80 0.85<br>e 0.40 BSC<br>H E 1.15 1.20 1.25<br>L 0.29 REF<br>L2 0.15 0.20 0.25<br>STYLE 1:<br>3X L2 OU PIN 1. 2. BASEEMITTER<br>BOTTOM VIEW  3. COLLECTOR<br>RECOMMENDED<br>SOLDERING FOOTPRINT*<br>2X<br>0.40<br>2X 0.27<br>“AT<br>PACKAGE<br>OUTLINE<br>NEE]<br>1.50<br>3X 0.52 ace 0.36<br>DIMENSIONS: MILLIMETERS<br>**----- End of picture text -----**<br>


*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

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## **LITERATURE FULFILLMENT** : 

**BC846BM3/D** 

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