BC846A

## - BC846A BC848C 

## NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR 

## Features 

Ideally Suited for Automatic Insertion Complementary PNP Types Available (BC856-BC858) 

|Ideally Suited for Automatic Insertion|Ideally Suited for Automatic Insertion|Ideally Suited for Automatic Insertion|Ideally Suited for Automatic Insertion|Ideally Suited for Automatic Insertion|Ideally Suited for Automatic Insertion|Ideally Suited for Automatic Insertion|Ideally Suited for Automatic Insertion|Ideally Suited for Automatic Insertion|Ideally Suited for Automatic Insertion|Ideally Suited for Automatic Insertion|Ideally Suited for Automatic Insertion|Ideally Suited for Automatic Insertion|Ideally Suited for Automatic Insertion|Ideally Suited for Automatic Insertion|Ideally Suited for Automatic Insertion|Ideally Suited for Automatic Insertion|||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|Ideally Suited for Automatic Insertion<br>Complementary PNP Types Available<br>(BC856-BC858)<br>For Switching and AF Amplifier Applications<br>Case: SOT-23, Molded Plastic<br>Mechanical Data<br>A<br>E<br>B<br>C<br>G<br>D<br>TOP VIEW<br>C<br>E<br>B<br>ea~~e:~~=i||||||||||||||||||||Dim<br>A<br>B<br>C<br>D<br>E<br>G<br>H|SOT-23<br>Min<br>0.37<br>1.19<br>2.10<br>0.89<br>0.45<br>1.78<br>2.65|Max<br>0.51<br>1.40<br>2.50<br>1.05<br>0.61<br>2.05<br>3.05|
|}||Terminals: Solderable per MIL-STD-202,<br>Method 208<br>Pin Connections and Marking Codes<br>(See Table & Diagram)<br>Approx. Weight: 0.008 grams<br>Mounting Position: Any||J<br>L<br>M<br>H<br>K<br>~~——~~ia||||||||||||||||J<br>0.013<br>0.15<br>K<br>0.89<br>1.10<br>L<br>0.45<br>0.61<br>M<br>0.076<br>0.178<br>All Dimensions in mm|||
|||Marking Code (Note 2)|||||||||||||||||||||
|||Type<br>Marking<br>Type||Marking|||||||||||||||||||
|||BC846A<br>1A, K1Q<br>BC847C||1G, K1M|||||||||||||||||||
|||BC846B<br>1B, K1R<br>BC848A||1J, K1J, K1E, K1Q|||||||||||||||||||
|||BC847A<br>1E, K1E, K1Q<br>BC848B||1K, K1K, K1F, K1R|||||||||||||||||||
|||BC847B<br>1F, K1F, K1R<br>BC848C||1L, K1L, K1M|||||||||||||||||||



Maximum Ratings @ TA = 25°C unless otherwise specified 

|Characteristic|Symbol|Value|Unit|
|---|---|---|---|
|Collector-Base Voltage<br>BC846<br>BC847<br>BC848|VCBO|80<br>50<br>30|V|
|Collector-Emitter Voltage<br>BC846<br>BC847<br>BC848|VCEO|65<br>45<br>30|V|
|Emitter-Base Voltage<br>BC846, BC847<br>BC848|VEBO|6.0<br>5.0|V|
|Collector Current|IC|100|mA|
|Peak Collector Current|ICM|200|mA|
|Peak Emitter Current|IEM|200|mA|
|Power Dissipation at TS= 50°C (Note 1)|Pd|310|mW|
|Operating and Storage Temperature Range|Tj, TSTG|-65 to +150|°C|



Notes: 1. Package mounted on ceramic substrate 0.7mm x 2.5cm[2] area. 

2. Current gain subgroup “C” is not available for BC846. 

DS11108 Rev. M-2 

1 of 2 

BC846A-BC848C 

## Electrical Characteristics[@ T][A][ = 25°C unless otherwise specified] 

**==> picture [504 x 429] intentionally omitted <==**

**----- Start of picture text -----**<br>
Characteristic Symbol Min Typ Max Unit Test Condition<br>Collector-Base Breakdown Voltage (Note 3)      BC846 80 — —<br>BC847 V(BR)CBO 50 — — V IC = 10�A, IB = 0<br>BC848 30 — —<br>Collector-Emitter Breakdown Voltage (Note 3)   BC846 65 — —<br>BC847 V(BR)CEO 45 — — V IC = 10mA, IB = 0<br>BC848 30 — —<br>Emitter-Base Breakdown Voltage          BC846, BC847(Note 3)                                                               BC848 [V][(BR)EBO] 65 — — V IE = 1�A, IC = 0<br>H-Parameters<br>Small Signal Current Gain Current Gain Group A hfe — 220 — —<br>B hfe — 330 — —<br>C hfe — 600 — —<br>Input Impedance Current Gain Group A hie — 2.7 — k�<br>B hie — 4.5 — k� VCE = 5.0V, IC = 2.0mA,<br>C hie — 8.7 — k� f = 1.0kHz<br>Output Admittance Current Gain Group A hoe — 18 — µS<br>B hoe — 30 — µS<br>C hoe — 60 — µS<br>Reverse Voltage Transfer Ratio A hre — 1.5x10 [-4] — —<br>Current Gain Group                                                  B hre — 2x10 [-4] — —<br>C hre — 3x10 [-4] — —<br>DC Current Gain Current Gain Group A 110 180 220<br>B hFE 200 290 450 — VCE = 5.0V, IC = 2.0mA<br>(Note 3)     C 420 520 800<br>Thermal Resistance, Junction to Substrate Backside R�S — — 320 °C/W Note 1<br>Thermal Resistance, Junction to Ambient Air R�JA — — 400 °C/W Note 1<br>Collector-Emitter Saturation Voltage (Note 3) VCE(SAT) — 20090 250600 mV IICC = 10mA, I = 100mA, IB = 0.5mAB = 5.0mA<br>Base-Emitter Saturation Voltage (Note 3) VBE(SAT) — 700900 — mV IICC = 10mA, I = 100mA, IB = 0.5mAB = 5.0mA<br>580 660 700 VCE = 5.0V, IC = 2.0mA<br>Base-Emitter Voltage (Note 3) VBE(ON) — — 770 mV VCE = 5.0V, IC = 10mA<br>Collector-Cutoff Current (Note 3) BC846 ICES — — 15 nA VCE = 80V<br>BC847 ICES — — 15 nA VCE = 50V<br>BC848 ICES — — 15 nA VCE = 30V<br>ICBO — — 15 nA VCB = 40V<br>ICBO — — 5.0 µA VCB = 30V, TA = 150°C<br>Gain Bandwidth Product fT 100 300 — MHz f = 100MHzVCE = 5.0V, IC = 10mA,<br>Collector-Base Capacitance CCBO — 3.0 — pF VCB = 10V, f = 1.0MHz<br>VCE = 5V, IC = 200µA,<br>Noise Figure NF — 2 10 dB RS = 2.0k��<br>f = 1.0kHz, �f = 200Hz<br>**----- End of picture text -----**<br>


- Notes: 1. Package mounted on ceramic substrate 0.7mm x 2.5cm[2] area. 

   2. Current gain subgroup “C” is not available for BC846. 

   3. Short duration pulse test to minimize self-heating effect. 

DS11108 Rev. M-2 

2 of 2 

BC846A-BC848C