BC817-40WT1G

BC817-40W 

## 45 V, 0.5 A, General Purpose NPN Transistor 

ON Semiconductor’s BC817−40W is a General Purpose NPN Transistor that is housed in the SC−70/SOT−323 package. 

## **Features** 

- NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

- This Device is Pb−Free, Halogen Free/BFR Free and is RoHS Compliant 

## **MAXIMUM RATINGS** (TA = 25 ° C) 

|**MAXIMUM RATINGS**(TA = 25A = 25= 25°C)||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Collector − Emitter Voltage|VCEO|45|V|
|Collector − Base Voltage|VCBO|50|V|
|Emitter − Base Voltage|VEBO|5.0|V|
|Collector Current − Continuous|IC|500|mAdc|



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COLLECTOR<br>3<br>1<br>BASE<br>& )<br>2<br>EMITTER<br>**----- End of picture text -----**<br>


## **THERMAL CHARACTERISTICS** 

|**THERMAL CHARACTERISTICS**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Max**|**Unit**|
|Total Device Dissipation (Note 1)|PD|460|mW|
|Thermal Resistance,<br>Junction−to−Ambient (Note 1)|R JA|272|°C/W|
|Junction and Storage Temperature<br>Range|TJ, Tstg|−55 to +150|°C|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−4 Board, 1 oz. Cu, 100 mm[2] 

**SC−70 CASE 419 STYLE 3** 

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MARKING DIAGRAM<br>**----- End of picture text -----**<br>


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CE M<br>1 -<br>CE = Specific Device Code<br>M = Date Code<br>= Pb−Free Package<br>(Note: Microdot may be in either location)<br>**----- End of picture text -----**<br>


*Date Code orientation and/or overbar may vary depending upon manufacturing location. 

**ORDERING INFORMATION**[†] 

**Device Package Shipping** BC817−40WT1G SC−70 3000 / Tape & (Pb−Free) Reel NSVBC817−40WT1G SC−70 3000 / Tape & (Pb−Free) Reel ~~==~~ †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 

Publication Order Number: **BC817−40W/D** 

**1** 

© Semiconductor Components Industries, LLC, 2016 **May, 2016 − Rev. 2** 

**BC817−40W** 

**ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS** (TA= 25°C unless otherwise noted)||||||
|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**||||||
|Collector−Emitter Breakdown Voltage<br>(IC= 10 mA)|V(VR)CEO|45|−|−|V|
|Collector−Emitter Breakdown Voltage<br>(VEB= 0 V, IC= 10�A)|V(VR)CES|50|−|−|V|
|Emitter−Base Breakdown Voltage<br>(IE= 1.0�A)|V(VR)EBO|5.0|−|−|V|
|Collector Cutoff Current<br>(VCB= 20 V)<br>(VCB= 20 V, TA= 150°C)|ICBO|−<br>−|−<br>−|100<br>5.0|nA<br>�A|
|**ON CHARACTERISTICS**||||||
|DC Current Gain (Note 2)<br>(IC= 100 mA, VCE= 1.0 V)<br>(IC= 500 mA, VCE= 1.0 V)|hFE|250<br>40|−<br>−|600<br>−|−|
|Collector−Emitter Saturation Voltage (Note 2)<br>(IC= 500 mA, IB= 50 mA)|VCE(sat)|−|−|0.7|V|
|Base−Emitter On Voltage (Note 2)<br>(IC= 500 mA, VCE= 1.0 V)|VBE(on)|−|−|1.2|V|
|**SMALL−SIGNAL CHARACTERISTICS**||||||
|Current−Gain − Bandwidth Product<br>(IC= 10 mA, VCE= 5.0 V, f = 100 MHz)|fT|100|−|−|MHz|
|Output Capacitance<br>(VCB= 10 V, f = 1.0 MHz)|Cobo|−|10|−|pF|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Condition: Pulse Width = 300 � sec, Duty Cycle ≤ 2% 

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**2** 

**BC817−40W** 

## **TYPICAL CHARACTERISTICS** 

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700 1<br>150 ° C VCE = 1 V IC/IB = 10<br>600<br>150 ° C<br>500 0.1 25 ° C<br>400 25 ° C −55 ° C<br>300<br>−55 ° C<br>0.01<br>200<br>100<br>0 0.001<br>0.001 0.01 0.1 1 0.001 0.01 0.1 1<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>Figure 1. DC Current Gain vs. Collector Figure 2. Collector Emitter Saturation Voltage<br>Current vs. Collector Current<br>1.1 1.2<br>1.0 IC/IB = 10 −55 ° C 1.1 VCE = 5 V<br>1.0<br>0.9<br>0.8 25 ° C 0.9 −55 ° C<br>0.8<br>0.7 25 ° C<br>0.7<br>0.6 150 ° C<br>0.6<br>0.5<br>0.5 150 ° C<br>0.4 0.4<br>0.3 0.3<br>0.2 0.2<br>0.0001 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>, DC CURRENT GAIN , COLLECTOR−EMITTER<br>FE<br>h<br>SATURATION VOLTAGE (V)<br>CE(sat)<br>V<br>, BASE−EMITTER<br>BE(sat)<br>V , BASE−EMITTER VOLTAGE (V)<br>SATURATION VOLTAGE (V)<br>BE(on)<br>V<br>**----- End of picture text -----**<br>


**Figure 3. Base Emitter Saturation Voltage vs. Collector Current** 

**Figure 4. Base Emitter Voltage vs. Collector Current** 

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1000<br>VCE = 1 V<br>TA = 25 ° C<br>100<br>10<br>0.1 1 10 100 1000<br>IC, COLLECTOR CURRENT (mA)<br>PRODUCT (MHz)<br>, CURRENT−GAIN−BANDWIDTH<br>fT<br>**----- End of picture text -----**<br>


**Figure 5. Current Gain Bandwidth Product vs. Collector Current** 

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**BC817−40W** 

## **TYPICAL CHARACTERISTICS** 

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1.0<br>TJ = 25°C +1<br>0.8 �VC for VCE(sat)<br>0<br>0.6<br>IC = 10 mA 100 mA 300 mA 500 mA -1<br>0.4<br>0.2 -2 �VB for VBE<br>0<br>0.01 0.1 1 10 100 1 10 100 1000<br>IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>C)°<br>V, TEMPERATURE COEFFICIENTS (mV/<br>θ<br>VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)<br>**----- End of picture text -----**<br>


**Figure 6. Saturation Region** 

**Figure 7. Temperature Coefficients** 

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100<br>Cib<br>10<br>Cob<br>1<br>0.1 1 10 100<br>VR, REVERSE VOLTAGE (VOLTS)<br>Figure 8. Capacitances<br>1<br>100 ms 1 ms<br>1 s 10 ms<br>Thermal Limit<br>0.1<br>0.01<br>Single Pulse Test @ TA = 25°C<br>0.001<br>0.01 0.1 1 10 100<br>VCE (Vdc)<br>C, CAPACITANCE (pF)<br> (A)<br>IC<br>**----- End of picture text -----**<br>


**Figure 9. Safe Operating Area** 

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**BC817−40W** 

## **PACKAGE DIMENSIONS** 

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SC−70 (SOT−323)<br>CASE 419−04<br>ISSUE N<br>D NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.<br>e1 2. CONTROLLING DIMENSION: INCH.<br>MILLIMETERS INCHES<br>3 DIM MIN NOM MAX MIN NOM MAX<br>A 0.80 0.90 1.00 0.032 0.035 0.040<br>HE E A1 0.00 0.05 0.10 0.000 0.002 0.004<br>1 2 A2 0.70 REF 0.028 REF<br>b 0.30 0.35 0.40 0.012 0.014 0.016<br>c 0.10 0.18 0.25 0.004 0.007 0.010<br>il iaa nr = ————— D 1.80 2.10 2.20 0.071 0.083 0.087<br>b E 1.15 1.24 1.35 0.045 0.049 0.053<br>e 1.20 1.30 1.40 0.047 0.051 0.055<br>e e1 0.65 BSC 0.026 BSC<br>L 0.20 0.38 0.56 0.008 0.015 0.022<br>H E 2.00 2.10 2.40 0.079 0.083 0.095<br>STYLE 3:<br>A A2 c PIN 1. BASE<br>2. EMITTER<br>3. COLLECTOR<br>+H, 0.05 (0.002) A1 Jo L s<br>**----- End of picture text -----**<br>


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SOLDERING FOOTPRINT*<br>0.65<br>0.65 0.025<br>0.025<br>1.9<br>aa<br>0.075<br>0.9<br>0.035<br>0.7<br>LE<br>0.028<br>SCALE 10:1 mm<br>ate — inches<br>**----- End of picture text -----**<br>


*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

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