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BC817-25LT1G
Bipolar (BJT) Single Transistor, General Purpose, NPN, 45 V, 500 mA, 300 mW, SOT-23, Surface Mount
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- Manufacturer: ONSEMI
- Product type: Single Bipolar Junction Transistors - BJT
- Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:100MHz; Power Dissipation Pd:300mW; DC Collector Current:500mA; DC Current Gain hFE:100hFE; Transistor Cas
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: BCxxx
- Qualification: AEC-Q101
- Power Dissipation: 300mW
- Transistor Mounting: Surface Mount
- Transistor Polarity: NPN
- Transition Frequency: 100MHz
- Transistor Case Style: SOT-23
- DC Current Gain hFE Min: 100hFE
- Operating Temperature Max: 150°C
- Continuous Collector Current: 500mA
- Collector Emitter Voltage Max: 45V
| Delivery and price | |
|---|---|
| Units per pack | 1500 |
| Price | 0.032 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**DATA SHEET www.onsemi.com** ## General Purpose Transistors **NPN Silicon** ## BC817-16L, SBC817-16L, BC817-25L, SBC817-25L, BC817-40L, SBC817-40L ## **Features** - S and NSV Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable - These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ## **MAXIMUM RATINGS** |**MAXIMUM RATINGS**|||| |---|---|---|---| |**Rating**|**Symbol**|**Value**|**Unit**| |Collector − Emitter Voltage|VCEO|45|V| |Collector − Base Voltage|VCBO|50|V| |Emitter − Base Voltage|VEBO|5.0|V| |Collector Current − Continuous|IC|500|mAdc| ## **THERMAL CHARACTERISTICS** |**THERMAL CHARACTERISTICS**|||| |---|---|---|---| |**Characteristic**|**Symbol**|**Max**|**Unit**| |Total Device Dissipation FR−5 Board,<br>(Note 1) TA= 25°C<br>Derate above 25°C|PD|225<br>1.8|mW<br>mW/°C| |Thermal Resistance,<br>Junction−to−Ambient|R�JA|556|°C/W| |Total Device Dissipation<br>Alumina Substrate, (Note 2)<br>TA= 25°C<br>Derate above 25°C|PD|300<br>2.4|mW<br>mW/°C| |Thermal Resistance,<br>Junction−to−Ambient|R�JA|417|°C/W| |Junction and Storage Temperature|TJ, Tstg|−65 to +150|°C| **==> picture [73 x 89] intentionally omitted <==** **----- Start of picture text -----**<br> COLLECTOR<br>3<br>1<br>BASE<br>2<br>EMITTER<br>**----- End of picture text -----**<br> **==> picture [48 x 45] intentionally omitted <==** **----- Start of picture text -----**<br> 3<br>1<br>2<br>**----- End of picture text -----**<br> **==> picture [38 x 27] intentionally omitted <==** **----- Start of picture text -----**<br> SOT−23<br>CASE 318<br>STYLE 6<br>**----- End of picture text -----**<br> ## **MARKING DIAGRAM** **==> picture [63 x 38] intentionally omitted <==** **----- Start of picture text -----**<br> 6x M �<br>�<br>1<br>**----- End of picture text -----**<br> - 6x = Device Code x = A, B, or C - M = Date Code* � = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ## **ORDERING INFORMATION** See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina. Publication Order Number: **BC817−16LT1/D** **1** © Semiconductor Components Industries, LLC, 1997 **October, 2021 − Rev. 17** **BC817−16L, SBC817−16L, BC817−25L, SBC817−25L, BC817−40L, SBC817−40L** **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) |**ELECTRICAL CHARACTERISTICS** (TA= 25°C unless otherwise noted)|||||| |---|---|---|---|---|---| |**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**| |**OFF CHARACTERISTICS**|||||| |Collector−Emitter Breakdown Voltage<br>(IC= 10 mA)|V(BR)CEO|45|−|−|V| |Collector−Emitter Breakdown Voltage<br>(VEB= 0, IC= 10�A)|V(BR)CES|50|−|−|V| |Emitter−Base Breakdown Voltage<br>(IE= 1.0�A)|V(BR)EBO|5.0|−|−|V| |Collector Cutoff Current<br>(VCB= 20 V)<br>(VCB= 20 V, TA= 150°C)|ICBO|−<br>−|−<br>−|100<br>5.0|nA<br>�A| |**ON CHARACTERISTICS**|||||| |DC Current Gain<br>(IC= 100 mA, VCE= 1.0 V)<br>BC817−16, SBC817−16<br>BC817−25, SBC817−25<br>BC817−40, SBC817−40<br>(IC= 500 mA, VCE= 1.0 V)|hFE|100<br>160<br>250<br>40|−<br>−<br>−<br>−|250<br>400<br>600<br>−|−| |Collector−Emitter Saturation Voltage<br>(IC= 500 mA, IB= 50 mA)|VCE(sat)|−|−|0.7|V| |Base−Emitter On Voltage<br>(IC= 500 mA, VCE= 1.0 V)|VBE(on)|−|−|1.2|V| |**SMALL−SIGNAL CHARACTERISTICS**|||||| |Current−Gain − Bandwidth Product<br>(IC= 10 mA, VCE= 5.0 Vdc, f = 100 MHz)|fT|100|−|−|MHz| |Output Capacitance<br>(VCB= 10 V, f = 1.0 MHz)|Cobo|−|10|−|pF| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ## **ORDERING INFORMATION** |**ORDERING INFORMATION**|||| |---|---|---|---| |**Device**|**Specific Marking**|**Package**|**Shipping**†| |BC817−16LT1G|6A|SOT−23<br>(Pb−Free)|3000 / Tape & Reel| |NSVBC817−16LT1G|||| |BC817−16LT3G|||10,000 / Tape & Reel| |SBC817−16LT3G|||| |BC817−25LT1G|6B|SOT−23<br>(Pb−Free)|3000 / Tape & Reel| |SBC817−25LT1G|||| |BC817−25LT3G|||10,000 / Tape & Reel| |SBC817−25LT3G|||| |BC817−40LT1G|6C|SOT−23<br>(Pb−Free)|3000 / Tape & Reel| |SBC817−40LT1G|||| |BC817−40LT3G|||10,000 / Tape & Reel| |SBC817−40LT3G|||| †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. **www.onsemi.com** **2** **BC817−16L, SBC817−16L, BC817−25L, SBC817−25L, BC817−40L, SBC817−40L** ## **TYPICAL CHARACTERISTICS − BC817−16L, SBC817−16L** **==> picture [490 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> 300 1<br>150 ° C VCE = 1 V IC/IB = 10<br>200 25 ° C 150 ° C<br>25 ° C<br>0.1 −55 ° C<br>−55 ° C<br>100<br>0 0.01<br>0.001 0.01 0.1 1 0.001 0.01 0.1 1<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>, DC CURRENT GAIN , COLLECTOR−EMITTER<br>FE<br>h<br>SATURATION VOLTAGE (V)<br>CE(sat)<br>V<br>**----- End of picture text -----**<br> **Figure 1. DC Current Gain vs. Collector Current** **Figure 2. Collector Emitter Saturation Voltage vs. Collector Current** **==> picture [490 x 172] intentionally omitted <==** **----- Start of picture text -----**<br> 1.1 1.2<br>1.0 IC/IB = 10 −55 ° C 1.1 VCE = 5 V<br>1.0<br>0.9 25 ° C 0.9 −55 ° C<br>0.8<br>0.7 150 ° C 0.8 25 ° C<br>0.7<br>0.6<br>0.6<br>0.5 0.5 150 ° C<br>0.4 0.4<br>0.3 0.3<br>0.2 0.2<br>0.0001 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>, BASE−EMITTER<br>BE(sat)<br>V , BASE−EMITTER VOLTAGE (V)<br>SATURATION VOLTAGE (V)<br>BE(on)<br>V<br>**----- End of picture text -----**<br> **Figure 3. Base Emitter Saturation Voltage vs. Collector Current** **Figure 4. Base Emitter Voltage vs. Collector Current** **==> picture [251 x 174] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>VCE = 1 V<br>TA = 25 ° C<br>100<br>10<br>0.1 1 10 100 1000<br>IC, COLLECTOR CURRENT (mA)<br>PRODUCT (MHz)<br>, CURRENT−GAIN−BANDWIDTH<br>fT<br>**----- End of picture text -----**<br> **Figure 5. Current Gain Bandwidth Product vs. Collector Current** **www.onsemi.com** **3** **BC817−16L, SBC817−16L, BC817−25L, SBC817−25L, BC817−40L, SBC817−40L** ## **TYPICAL CHARACTERISTICS − BC817−16L, SBC817−16L** **==> picture [489 x 171] intentionally omitted <==** **----- Start of picture text -----**<br> 1.0<br>TJ = 25°C +1<br>0.8 �VC for VCE(sat)<br>0<br>0.6<br>IC = 10 mA 100 mA 300 mA 500 mA -1<br>0.4<br>0.2 -2 �VB for VBE<br>0<br>0.01 0.1 1 10 100 1 10 100 1000<br>IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>C)°<br>V, TEMPERATURE COEFFICIENTS (mV/<br>θ<br>VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)<br>**----- End of picture text -----**<br> **Figure 6. Saturation Region** **Figure 7. Temperature Coefficients** **==> picture [235 x 169] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>Cib<br>10<br>Cob<br>1<br>0.1 1 10 100<br>VR, REVERSE VOLTAGE (VOLTS)<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br> **Figure 8. Capacitances** **www.onsemi.com** **4** **BC817−16L, SBC817−16L, BC817−25L, SBC817−25L, BC817−40L, SBC817−40L** ## **TYPICAL CHARACTERISTICS − BC817−25L, SBC817−25L** **==> picture [490 x 382] intentionally omitted <==** **----- Start of picture text -----**<br> 500 1<br>150 ° C VCE = 1 V IC/IB = 10<br>400<br>150 ° C<br>300 25 ° C 25 ° C<br>0.1 −55 ° C<br>200<br>−55 ° C<br>100<br>0 0.01<br>0.001 0.01 0.1 1 0.001 0.01 0.1 1<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>Figure 9. DC Current Gain vs. Collector Figure 10. Collector Emitter Saturation Voltage<br>Current vs. Collector Current<br>1.1 1.2<br>1.0 IC/IB = 10 −55 ° C 1.1 VCE = 5 V<br>° 1.0<br>0.9 25 C<br>0.9 −55 ° C<br>0.8 150 ° C<br>0.8<br>0.7 25 ° C<br>0.7<br>0.6<br>0.6<br>0.5 0.5 150 ° C<br>0.4 0.4<br>0.3 0.3<br>0.2 0.2<br>0.0001 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>, DC CURRENT GAIN , COLLECTOR−EMITTER<br>FE<br>h<br>SATURATION VOLTAGE (V)<br>CE(sat)<br>V<br>, BASE−EMITTER<br>BE(sat)<br>V , BASE−EMITTER VOLTAGE (V)<br>SATURATION VOLTAGE (V)<br>BE(on)<br>V<br>**----- End of picture text -----**<br> **Figure 11. Base Emitter Saturation Voltage vs. Collector Current** **Figure 12. Base Emitter Voltage vs. Collector Current** **==> picture [250 x 174] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>VCE = 1 V<br>TA = 25 ° C<br>100<br>10<br>0.1 1 10 100 1000<br>IC, COLLECTOR CURRENT (mA)<br>PRODUCT (MHz)<br>, CURRENT−GAIN−BANDWIDTH<br>fT<br>**----- End of picture text -----**<br> **Figure 13. Current Gain Bandwidth Product vs. Collector Current** **www.onsemi.com** **5** **BC817−16L, SBC817−16L, BC817−25L, SBC817−25L, BC817−40L, SBC817−40L** ## **TYPICAL CHARACTERISTICS − BC817−25L, SBC81725L** **==> picture [489 x 171] intentionally omitted <==** **----- Start of picture text -----**<br> 1.0<br>TJ = 25°C +1<br>0.8 �VC for VCE(sat)<br>0<br>0.6<br>IC = 10 mA 100 mA 300 mA 500 mA -1<br>0.4<br>0.2 -2 �VB for VBE<br>0<br>0.01 0.1 1 10 100 1 10 100 1000<br>IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>C)°<br>V, TEMPERATURE COEFFICIENTS (mV/<br>θ<br>VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)<br>**----- End of picture text -----**<br> **Figure 14. Saturation Region** **Figure 15. Temperature Coefficients** **==> picture [235 x 169] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>Cib<br>10<br>Cob<br>1<br>0.1 1 10 100<br>VR, REVERSE VOLTAGE (VOLTS)<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br> **Figure 16. Capacitances** **www.onsemi.com** **6** **BC817−16L, SBC817−16L, BC817−25L, SBC817−25L, BC817−40L, SBC817−40L** ## **TYPICAL CHARACTERISTICS − BC817−40L, SBC817−40L** **==> picture [490 x 382] intentionally omitted <==** **----- Start of picture text -----**<br> 700 1<br>150 ° C VCE = 1 V IC/IB = 10<br>600<br>150 ° C<br>500 0.1 25 ° C<br>400 25 ° C −55 ° C<br>300<br>−55 ° C<br>0.01<br>200<br>100<br>0 0.001<br>0.001 0.01 0.1 1 0.001 0.01 0.1 1<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>Figure 17. DC Current Gain vs. Collector Figure 18. Collector Emitter Saturation Voltage<br>Current vs. Collector Current<br>1.1 1.2<br>1.0 IC/IB = 10 −55 ° C 1.1 VCE = 5 V<br>1.0<br>0.9<br>0.8 25 ° C 0.9 −55 ° C<br>0.8<br>0.7 25 ° C<br>0.7<br>0.6 150 ° C<br>0.6<br>0.5<br>0.5 150 ° C<br>0.4 0.4<br>0.3 0.3<br>0.2 0.2<br>0.0001 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>, DC CURRENT GAIN , COLLECTOR−EMITTER<br>FE<br>h<br>SATURATION VOLTAGE (V)<br>CE(sat)<br>V<br>, BASE−EMITTER<br>BE(sat)<br>V , BASE−EMITTER VOLTAGE (V)<br>SATURATION VOLTAGE (V)<br>BE(on)<br>V<br>**----- End of picture text -----**<br> **Figure 19. Base Emitter Saturation Voltage vs. Collector Current** **Figure 20. Base Emitter Voltage vs. Collector Current** **==> picture [250 x 174] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>VCE = 1 V<br>TA = 25 ° C<br>100<br>10<br>0.1 1 10 100 1000<br>IC, COLLECTOR CURRENT (mA)<br>PRODUCT (MHz)<br>, CURRENT−GAIN−BANDWIDTH<br>fT<br>**----- End of picture text -----**<br> **Figure 21. Current Gain Bandwidth Product vs. Collector Current** **www.onsemi.com** **7** **BC817−16L, SBC817−16L, BC817−25L, SBC817−25L, BC817−40L, SBC817−40L** ## **TYPICAL CHARACTERISTICS − BC817−40L, SBC817−40L** **==> picture [489 x 171] intentionally omitted <==** **----- Start of picture text -----**<br> 1.0<br>TJ = 25°C +1<br>0.8 �VC for VCE(sat)<br>0<br>0.6<br>IC = 10 mA 100 mA 300 mA 500 mA -1<br>0.4<br>0.2 -2 �VB for VBE<br>0<br>0.01 0.1 1 10 100 1 10 100 1000<br>IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>C)°<br>V, TEMPERATURE COEFFICIENTS (mV/<br>θ<br>VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)<br>**----- End of picture text -----**<br> **Figure 22. Saturation Region** **Figure 23. Temperature Coefficients** **==> picture [235 x 169] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>Cib<br>10<br>Cob<br>1<br>0.1 1 10 100<br>VR, REVERSE VOLTAGE (VOLTS)<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br> **Figure 24. Capacitances** **www.onsemi.com** **8** **BC817−16L, SBC817−16L, BC817−25L, SBC817−25L, BC817−40L, SBC817−40L** ## **TYPICAL CHARACTERISTICS − BC817−16L, SBC817−16L, BC817−25L, SBC817−25L, BC817−40L, SBC817−40L** **==> picture [234 x 168] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>100 ms 1 ms<br>1 s 10 ms<br>Thermal Limit<br>0.1<br>0.01<br>Single Pulse Test @ TA = 25°C<br>0.001<br>0.01 0.1 1 10 100<br>VCE (Vdc)<br> (A)<br>IC<br>**----- End of picture text -----**<br> **Figure 25. Safe Operating Area** **www.onsemi.com** **9** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **==> picture [494 x 668] intentionally omitted <==** **----- Start of picture text -----**<br> SOT−23 (TO−236)<br>CASE 318−08<br>ISSUE AS<br>2 DATE 30 JAN 2018<br>SCALE 4:1<br>D NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETERS.<br>3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.<br>0.25 MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF<br>“a 3 t = THE BASE MATERIAL.<br>| E HE T 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,PROTRUSIONS, OR GATE BURRS.<br>1 2<br>MILLIMETERS INCHES<br>DIM MIN NOM MAX MIN NOM MAX<br>L A 0.89 1.00 1.11 0.035 0.039 0.044<br>3X b L1 A1b 0.010.37 0.060.44 0.100.50 0.0000.015 0.0020.017 0.0040.020<br>e VIEW C c 0.08 0.14 0.20 0.003 0.006 0.008<br>TOP VIEW D 2.80 2.90 3.04 0.110 0.114 0.120<br>E 1.20 1.30 1.40 0.047 0.051 0.055<br>e 1.78 1.90 2.04 0.070 0.075 0.080<br>L 0.30 0.43 0.55 0.012 0.017 0.022<br>A L1 0.35 0.54 0.69 0.014 0.021 0.027<br>H E 2.10 2.40 2.64 0.083 0.094 0.104<br>= T 0 ° −−− 10 ° 0 ° −−− 10 °<br>a A1 SIDE VIEW SEE VIEW C c<br>GENERIC<br>END VIEW<br>MARKING DIAGRAM*<br>RECOMMENDED<br>SOLDERING FOOTPRINT XXXM<br>1<br>2.90 i 0.903X XXX = Specific Device Code oo<br>M = Date Code<br>= Pb−Free Package<br>LO | cr ,<br>*This information is generic. Please refer to<br>3X 0.80 a) LL 0.95 device data sheet for actual part marking.<br>PITCH Pb−Free indicator, “G” or microdot “ ”, |<br>DIMENSIONS: MILLIMETERS may or may not be present.<br>STYLE 1 THRU 5: STYLE 6: STYLE 7: STYLE 8:<br>CANCELLED PIN 1. BASE PIN 1. EMITTER PIN 1. ANODE<br>2. EMITTER 2. BASE 2. NO CONNECTION<br>3. COLLECTOR 3. COLLECTOR 3. CATHODE<br>STYLE 9: STYLE 10: STYLE 11: STYLE 12: STYLE 13: STYLE 14:<br>PIN 1. ANODE PIN 1. DRAIN PIN 1. ANODE PIN 1. CATHODE PIN 1. SOURCE PIN 1. CATHODE<br>2. ANODE 2. SOURCE 2. CATHODE 2. CATHODE 2. DRAIN 2. GATE<br>3. CATHODE 3. GATE 3. CATHODE−ANODE 3. ANODE 3. GATE 3. ANODE<br>STYLE 15: STYLE 16: STYLE 17: STYLE 18: STYLE 19: STYLE 20:<br>PIN 1. GATE PIN 1. ANODE PIN 1. NO CONNECTION PIN 1. NO CONNECTION PIN 1. CATHODE PIN 1. CATHODE<br>2. CATHODE 2. CATHODE 2. ANODE 2. CATHODE 2. ANODE 2. ANODE<br>3. ANODE 3. CATHODE 3. CATHODE 3. ANODE 3. CATHODE−ANODE 3. GATE<br>STYLE 21: STYLE 22: STYLE 23: STYLE 24: STYLE 25: STYLE 26:<br>PIN 1. GATE PIN 1. RETURN PIN 1. ANODE PIN 1. GATE PIN 1. ANODE PIN 1. CATHODE<br>2. SOURCE 2. OUTPUT 2. ANODE 2. DRAIN 2. CATHODE 2. ANODE<br>3. DRAIN 3. INPUT 3. CATHODE 3. SOURCE 3. GATE 3. NO CONNECTION<br>STYLE 27: STYLE 28:<br>PIN 1. CATHODE PIN 1. ANODE<br> 2. CATHODE 2. ANODE<br> 3. CATHODE 3. ANODE<br>Electronic versions are uncontrolled except when accessed directly from the Document Repository.<br>DOCUMENT NUMBER: 98ASB42226B Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.<br>DESCRIPTION: SOT−23 (TO−236) PAGE 1 OF 1<br>aes<br>ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.<br>ON Semiconductor reserves the right to make changes without further notice to any products herein. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **PUBLICATION ORDERING INFORMATION** **LITERATURE FULFILLMENT** : **TECHNICAL SUPPORT Email Requests to:** orderlit@onsemi.com **North American Technical Support: Europe, Middle East and Africa Technical Support:** Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 00421 33 790 2910 **onsemi Website:** www.onsemi.com Phone: 011 421 33 790 2910 For additional information, please contact your local Sales Representative ◊ **==> picture [232 x 43] intentionally omitted <==**
Updated at March 24, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
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When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
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We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
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