BC807DS,115

Bipolar Transistor Array, Dual PNP, 45 V, 500 mA

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Manufacturer: NEXPERIA
Product type: Bipolar Junction Transistor Arrays - BJT
Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-45V; Power Dissipation Pd:600mW; DC Collector Current:-500mA; DC Current Gain hFE:160hFE; Transistor Case Style:SOT-457;
MSL: MSL 1 - Unlimited
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 6Pins
Product Range: -
Qualification: -
Transistor Mounting: Surface Mount
Transistor Polarity: Dual PNP
Power Dissipation NPN: -
Power Dissipation PNP: 600mW
Transistor Case Style: SOT-457
Transition Frequency NPN: -
Transition Frequency PNP: 80MHz
Operating Temperature Max: 150°C
DC Current Gain hFE Min NPN: -
DC Current Gain hFE Min PNP: 160hFE
Continuous Collector Current NPN: -
Continuous Collector Current PNP: 500mA
Collector Emitter Voltage Max NPN: -
Collector Emitter Voltage Max PNP: 45V

Datasheet

Updated at March 1, 2026