Illustrative purposes only
BC639RL1G
Bipolar (BJT) Single Transistor, NPN, 80 V, 1 A, 800 mW, TO-92, Through Hole
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: ONSEMI
- Product type: Single Bipolar Junction Transistors - BJT
- Product variants: No other variants available. No other names.
- No. of Pins: 3Pins
- Power Dissipation: 800mW
- DC Current Gain hFE: 40hFE
- Transistor Mounting: Through Hole
- Transistor Polarity: NPN
- Transition Frequency: 200MHz
- Transistor Case Style: TO-92
- DC Current Gain hFE Min: 40hFE
- Operating Temperature Max: 150°C
- Continuous Collector Current: 1A
- Collector Emitter Voltage Max: 80V
Delivery and price | |
---|---|
Units per pack | 15000 |
Price | 0.051 € |
Current stock | N/A |
Lead time | 30 days |