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This product is RoHS compilant

BC63916-D27Z

Bipolar (BJT) Single Transistor, NPN, 80 V, 1 A, 830 mW, TO-92, Through Hole

  • Manufacturer: ONSEMI
  • Product type: Single Bipolar Junction Transistors - BJT
  • Product variants: No other variants available. No other names.
  • No. of Pins: 3Pins
  • Power Dissipation: 830mW
  • DC Current Gain hFE: 25hFE
  • Transistor Mounting: Through Hole
  • Transistor Polarity: NPN
  • DC Collector Current: 1A
  • Power Dissipation Pd: 830mW
  • Transition Frequency: 100MHz
  • Transistor Case Style: TO-92
  • DC Current Gain hFE Min: 25hFE
  • Operating Temperature Max: 150°C
  • Continuous Collector Current: 1A
  • Collector Emitter Voltage Max: 80V
  • Collector Emitter Voltage V(br)ceo: 80V
Delivery and price
Units per pack 500
Price 0.238 €
Current stock 15172
Lead time 7 days
PDF File icon Datasheet