Illustrative purposes only
BC63916-D27Z
Bipolar (BJT) Single Transistor, NPN, 80 V, 1 A, 830 mW, TO-92, Through Hole
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: ONSEMI
- Product type: Single Bipolar Junction Transistors - BJT
- Product variants: No other variants available. No other names.
- No. of Pins: 3Pins
- Power Dissipation: 830mW
- DC Current Gain hFE: 25hFE
- Transistor Mounting: Through Hole
- Transistor Polarity: NPN
- DC Collector Current: 1A
- Power Dissipation Pd: 830mW
- Transition Frequency: 100MHz
- Transistor Case Style: TO-92
- DC Current Gain hFE Min: 25hFE
- Operating Temperature Max: 150°C
- Continuous Collector Current: 1A
- Collector Emitter Voltage Max: 80V
- Collector Emitter Voltage V(br)ceo: 80V
Delivery and price | |
---|---|
Units per pack | 500 |
Price | 0.238 € |
Current stock | 15172 |
Lead time | 7 days |